CN1187801C - Method for producing compound semiconductor device - Google Patents

Method for producing compound semiconductor device Download PDF

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Publication number
CN1187801C
CN1187801C CNB021233152A CN02123315A CN1187801C CN 1187801 C CN1187801 C CN 1187801C CN B021233152 A CNB021233152 A CN B021233152A CN 02123315 A CN02123315 A CN 02123315A CN 1187801 C CN1187801 C CN 1187801C
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electrode
layer
contact electrode
manufacture method
contact
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CN1392597A (en
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浅野哲郎
榊原干人
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

To eliminate the drawback that a silicon nitride film is left beneath pad electrodes of a compound semiconductor device until the final step for safety of the retried film which is apt to break at bonding because of the hardness of a substrate and the nitride film. The manufacturing method is provided such that high concentration regions are provided beneath pad electrodes and a wiring layer or beneath the peripheral edge and a silicon nitride film beneath the pad electrodes is removed. The high concentration regions ensure a specified isolation after removal of the nitride film, this allowing the break-preventing gold plating step to be omitted and the spacing distance between each pad and the wiring layer to be reduced to realize the chip shrinkage.

Description

The manufacture method of compound semi-conductor device
Technical field
The present invention relates to a kind of manufacture method of compound semi-conductor device, particularly relate to a kind of manufacture method of compound semi-conductor device of the GaAs of employing substrate.
Background technology
Often use the microwave of GHz frequency band with in the communication apparatus in that mobile phone etc. is mobile, in antenna switching circuit and the commutation circuit that connects, signal etc., often be used to switch the switch element (for example, the spy opens flat 9-181642 number) of these high-frequency signals.As these elements, owing to will handle high-frequency, often use the field-effect transistor that adopts gallium, arsenic (GaAs) (below be called FET), advanced exploitation with the integrated monolithic integrated microwave circuit of described switching circuit self (MMIC) thereupon.
Figure 11 (A) is the sectional drawing of expression GaAs FET, surface portion at pure GaAs substrate 31, infiltration n type impurity, form n type channel region 32, the grid 33 that Schottky contacts is arranged in channel region 32 surface configuration, the both sides of grid 33 dispose with the GaAs surface and carry out source electrode, the drain electrode 34,35 that resistance contacts.This transistor utilizes the current potential of grid 33, under channel region 32 in form depletion layer, and then control source electrode 34 and the channel current between 35 of draining.
Figure 11 (B) is expression: the principle electrical circuit figure that adopts the compound semiconductor switched circuit device that is called SPDT (one pole double-throw) of GaAs FET.
The source electrode of first and second FET1, FET2 (or drain electrode) is connected with common input terminal IN, the grid of each FET1, FET2 is connected with the first and second control terminal CTL-1, CTL-2 by resistance R 1, R2, and the drain electrode of each FET (or source electrode) is connected with the first and second lead-out terminal OUT1, OUT2, the signal that applies at the first and second control terminal CTL-1, CTL-2 is a complementary signal, the FET that applies the H electric potential signal connects, and makes the signal that puts on input terminal IN be sent to a certain side's lead-out terminal.Resistance R 1, R2 are provided with by the gate leakage high-frequency signal the control terminal CTL-1 that exchanges ground connection, the DC potential of CTL-2 for preventing.
Figure 12 to Figure 20 represents the manufacture method of FET, contact and the distribution of compound semiconductor switched circuit device.
In Figure 12, form channel layer 2 on substrate 1 surface.
That is,, use silicon nitride film 3 to cover with the straight-through ion injection of about 100 thickness with 1 whole of substrate.Then, implement the lithographic procedures of optionally protective layer 4 on the predetermined channel layer 2 being windowed.Afterwards, with this protective layer 4 as mask, to predetermined channel layer 2 be embodied as the ion of selecting working lining and authorizing p-type impurity inject and authorize n type impurity ion inject.Consequently, form p-type zone 5 and form n type channel layer 2 thereon at pure substrate 1.
Among Figure 13, in source region 6 and the drain region 7 of substrate 1 surface formation with the two ends adjacency of channel layer 2.
Remove the protective layer 4 that uses in preceding operation, implement lithographic procedures again, optionally windowed in predetermined source region 6 and the protective layer 8 on the drain region 7.Then with protective layer 8 as mask, in predetermined source region 6 and drain region 7, inject the ion of authorizing n type impurity, form n+ type source region 6 and drain region 7.
Among Figure 14, in the source region 6 and drain region 7, adhered to Resistiue metal layers 10, formed first source electrode 11 and first drain electrode 12 as the ground floor electrode.
Implement lithographic procedures, the part of formation first source electrode 11 that optionally will be scheduled to and first drain electrode 12 is windowed.Utilize CF 4Plasma will be positioned at the first predetermined source electrode 11 and the silicon nitride film 3 of first drain electrode on 12 removed, and 3 layers of AnGe/Ni/Au that will form Resistiue metal layers 10 continuously are the vacuum evaporation lamination successively.Remove protective layer 13 afterwards, utilization is peeled off, and keeps first source electrode 11 and first drain electrode 12 on source region 6 and drain region 7.Then utilize alloying heat treatment, form the resistance junction of first source electrode 11 and source region 6 and first drain electrode 12 and drain region 7.
In Figure 15, implement the lithographic procedures of optionally pre-defined gate 16 parts being windowed.
Among Figure 16, after nitride film 3 dry ecthings that will expose, with the Ti/Pt/Au3 layer that constitutes grid metal level 18 vacuum steaming degree lamination successively.Remove protective layer 14 afterwards,, form the grid 16 and the first contact electrode 17 of the long 0.5 μ m of grid that connects with channel layer 2 by peeling off.
Among Figure 17, form passivating film 19 after, form second source electrode and drain 23,24 and wiring layer 25.
Form after the grid 16, in order to protect the channel layer 2 of grid 16 peripheries, the passivating film 19 that substrate 1 surface is formed by silicon nitride film covers.On this passivating film 19, implement lithographic procedures, for first source electrode and drain 11,12 coupling part and with the coupling part of grid 16, optionally implement diaphragm and window, with passivating film 19 dry ecthings of this part.Remove protective layer afterwards.
Afterwards, form second source electrode and drain 23,24 and wiring layer 25.Again implement lithographic procedures at substrate 1 whole face, the passivating film 19 on first source electrode 11 and first drain electrode 12 parts and the predetermined wiring layer 25 is exposed, other cover with protective layer 20.Then on whole, will form as these three layers of the Ti/Pt/Au of the distribution metal level 21 of triple electrode, vacuum steaming degree lamination successively.Protective layer 20 is directly as the mask utilization, so can form and first source electrode 11 and first drain electrode 12 second source electrodes 23 that connect and second drain electrode 24 and the wiring layer 25.The other parts of distribution metal level 21 are attached on the protective layer 20, so, remove protective layer 20, only keep second source electrode 23 and second drain electrode 24 and the wiring layer 25 by peeling off, other remove.In addition, local distribution partly utilizes this distribution metal level 21 to form, so the distribution metal level 21 of other distribution parts is retained certainly.
Among Figure 18, form the nitride film 26 that interlayer dielectric is used, form and electroplate with electrode 27.
For multilayer wiredization, the interlayer dielectric 26 that substrate 1 surface is formed by silicon nitride film covers.On interlayer dielectric 26 with implement lithographic procedures, to second source electrode and drain 23,24 the coupling part and the coupling part of distribution electrode 25, optionally implement diaphragm and window, the passivating film 19 of this part is carried out dry ecthing.Remove diaphragm afterwards.
Afterwards, form plating electrode 27.To constitute at whole and to electroplate with 3 layers of Ti/Pt/Au of electrode 27 vacuum steaming degree lamination successively.Second source electrode and drain 23,24 and the established part of distribution electrode 25 be provided with connection holes, connect and electroplate with electrode 27.
Among Figure 19, carry out gold-platedly, form the 3rd source electrode and drain 28,29 and be used for fixing the contact electrode 31 of closing line.
Implement lithographic procedures on substrate 1, the plating of the 3rd source electrode 28, the 3rd drain electrode 29 be scheduled to and contact electrode 31 parts of being scheduled to are exposed with electrode 27, electrolytic gold plating is carried out in using after protective layer 30 coverings of other.At this moment, protective layer 30 constitutes mask, just electroplates the part of exposing with electrode 27 and adheres to gold-plated.That is to say, form contact electrode 31 with second source electrode 23 and second drain electrode 24 the 3rd source electrodes 28 that connect and the 3rd drain electrode 29 and fixed engagement line.
Among Figure 20, finally form contact electrode 31, the press fit engagement line 40 thereon.
Remove after the protective layer 30, remove the whole plating of not wanting of showing out electrode 27 again.Having implemented gold-plated the 3rd source electrode 28, the 3rd drain electrode 29 and contact electrode 31 plating has not in addition just wanted with electrode.If utilize argon plasma to carry out ion(ic) etching, then do not carry out the plating of gold-plated part and truncated with electrode, interlayer dielectric 26 exposes.Gold-plated part is also cut what, but still has the thickness of 2-3 μ m, so no problem.A part of in addition distribution partly adopts this gold-plated formation, so the plating of other distributions part is with electrode 27 and gold-platedly be retained certainly.
Compound semiconductor switched circuit device is moved to the later process of assembling after finishing preceding working procedure.The flaky semiconductor chip is cut into slices, and is separated into other semiconductor, and this semiconductor chip is fixed on framework (not diagram) afterwards, with closing line 40, the contact electrode 31 of semiconductor chip is connected with the lead-in wire of regulation (not diagram).Adopt thin gold thread as closing line 40, connect with known ball bond.With transmitting mould mould dress, implement resin-encapsulated afterwards.
Summary of the invention
According to the manufacture method of compound semiconductor switched circuit device, utilize to the GaAs substrate and inject ion formation channel layer.Moreover, well-known, outside this, also be provided for preventing the epitaxially grown layer of the formation resilient coating that leaks, and make n type epitaxial growth layer growth at the GaAs substrate.According to this manufacture method, n type epitaxially grown layer is used for channel layer, so the advantage that improves the FET characteristic is arranged, inject the impurity of boron and so on beyond the FET channel region, form the zone of insulating.
Form at GaAs substrate or raceway groove and to inject boron etc. with epitaxially grown layer and the zone of insulating (below be referred to as insulating barrier) is half insulation, but, if the contact electrode layer that line engages usefulness directly is set on it, the mutual electric effect between adjacent electrode still exists so.For example owing to a little less than the dielectric strength, produce electrostatic breakdown, perhaps high-frequency signal leaks, level of isolation (ァ ィ ソ レ-シ ョ Application) deterioration etc., and the quality characteristic problem increases.Therefore in present manufacture method, apply with nitride film under wiring layer and the contact electrode layer.
But, because nitride film is hard, so the pressure during joint can produce deformation in contact portions.Be to suppress this point, on the bonding electrodes on the nitride film, carry out accordingly gold-plated, but gold-plated operation had both increased the operation amount, had increased cost again.
In addition, in present compound semi-conductor device, when contact and wiring layer are contacted formation with semiconductive GaAs substrate or insulating barrier, for guaranteeing level of isolation, in the distance that is provided with between the figure of adjacency more than the 20 μ m.Though this lacks theoretic evidence, semiconductive GaAs substrate or insulating barrier just make this thinking methods of insulating properties substrate see up to now, and it is infinitely-great thinking withstand voltage.If but actual measurement just knows that withstand voltage is limited.Therefore, it is generally acknowledged that in semiconductive GaAs substrate or insulating barrier, depletion layer extends, and utilizes the variation of the depletion layer distance of high-frequency signal correspondence, when depletion layer arrives the figure of adjacency, the leakage that will produce high-frequency signal herein.Therefore, contact electrode layer and wiring layer etc. are wanted the above distance configuration of 20 μ m at interval.
But, in described compound semi-conductor device, 5 contacts accounted for semiconductor chip near half, this becomes the major reason that can not reduce chip size.
Now, it is very surprising that the performance of Si semiconductor improves, and improves constantly in the possibility of high frequency band utilization.Though present silicon half chip is in the utilization difficulty of high frequency band, and the expensive compound semiconductor chip of use,, if the possibility that Si semiconductor utilizes improves, the compound semiconductor that chip price is high will be failed in price competition.Therefore, must reduce integrated size, suppress cost, it is inevitable that integrated chip size reduces.
The present invention is based on above-mentioned various situation and develops, the object of the present invention is to provide a kind of manufacture method of compound semi-conductor device, this method is by removing the nitride film under the contact electrode, the influence that pressure produces when suppressing wire-bonded, and under the contact electrode, area with high mercury is set, and under the grid metal of using as distribution, area with high mercury is set, do not increase operation and just realized dwindling the contact electrode of adjacency, the spacing distance of distribution electrode, and chip size contact point structure, the wired electric electrode structure that can dwindle.
It comprises following operation:
Lamination at enterprising row buffering layer of GaAs substrate and conductivity type epitaxially grown layer, a described conductivity type epitaxially grown layer is as channel layer, and the source electrode and the drain region of adjacency be arranged on this channel layer, form the channel region of FET, under the predetermined joining zone and under the predetermined wiring layer, form the operation of area with high mercury simultaneously; Removing whole overseas operation that forms insulating barrier of described channel region and described high concentration region; To form the operation of first source electrode and first drain electrode as the Resistiue metal layers of ground floor electrode attached to described first source electrode and drain region; To form the operation of grid and the first contact electrode and wiring layer as the grid metal level of second layer electrode attached on described channel layer and the described area with high mercury; Will be as the contact metal layer of triple electrode attached on first source electrode and first drain electrode and the first contact electrode, form that second source electrode and second drains and the operation of the second contact electrode; Closing line is fitted in operation on the second contact electrode.
Description of drawings
Fig. 1 is used to illustrate sectional drawing of the present invention;
Fig. 2 is used to illustrate sectional drawing of the present invention;
Fig. 3 is used to illustrate sectional drawing of the present invention;
Fig. 4 is used to illustrate sectional drawing of the present invention;
Fig. 5 is used to illustrate sectional drawing of the present invention;
Fig. 6 is used to illustrate sectional drawing of the present invention;
Fig. 7 is used to illustrate sectional drawing of the present invention;
Fig. 8 is used to illustrate sectional drawing of the present invention;
Fig. 9 is used to illustrate sectional drawing of the present invention;
Figure 10 is used to illustrate (a) of the present invention sectional drawing, (b) sectional drawing, (c) plane graph;
Figure 11 is (A) sectional drawing, (B) circuit diagram that is used to illustrate present example;
Figure 12 is the sectional drawing that is used to illustrate present example;
Figure 13 is the sectional drawing that is used to illustrate present example;
Figure 14 is the sectional drawing that is used to illustrate present example;
Figure 15 is the sectional drawing that is used to illustrate present example;
Figure 16 is the sectional drawing that is used to illustrate present example;
Figure 17 is the sectional drawing that is used to illustrate present example;
Figure 18 is the sectional drawing that is used to illustrate present example;
Figure 19 is the sectional drawing that is used to illustrate present example;
Figure 20 is the sectional drawing that is used to illustrate present example.
Embodiment
Below referring to figs. 1 through Figure 10 embodiments of the invention are described.
The present invention is made of following operation: at the lamination of GaAs substrate 51 enterprising row buffering layers 41 and a conductivity type epitaxially grown layer 42, the source electrode and the drain region 56,57 of adjacency are arranged on the channel layer 52 that a described conductivity type epitaxially grown layer 42 forms, form the channel region 44 of FET, under the predetermined joining zone and under the predetermined wiring layer, form the operation of area with high mercury 60,61 simultaneously; Form the operation of insulating barrier 45 on whole outside removing described channel region 44 and described area with high mercury 60,61; To form the operation of first source electrode and first drain electrode 56,57 as the Resistiue metal layers 64 of ground floor electrode attached to described source electrode and drain region 56,57; To form the operation of grid 69 and the first contact electrode 70 and wiring layer 62 as the grid metal level 68 of second layer electrode attached on described channel layer 52 and the described high concentration territory 60,61; To form the operation of second source electrode and second drain electrode, 75, the 76 and second contact electrode 77 as the contact metal layer 74 of triple electrode attached on first source electrode and first drain electrode, 65, the 66 and first contact electrode 70; Closing line 80 is fitted in operation on the second contact electrode 77.
First operation of the present invention, as shown in Figure 1, lamination at pure GaAs substrate 51 enterprising row buffering layers 41 and a conductivity type epitaxially grown layer 42, source electrode and drain region 56,57 are set, channel layer 52 adjacency with a conductivity type epitaxially grown layer 42 formation, form the channel region 44 of FET, under the predetermined joining zone and under the predetermined wiring layer, form area with high mercury 60,61 simultaneously.
This operation is the operation that constitutes the present invention's first feature, shown in Fig. 1 (a), on the pure compound semiconductor substrate 51 that forms with GaAs etc., the resilient coating 41 that is used to 6000 that suppress to leak is being set that is:.This resilient coating 41 is exactly an epitaxially grown layer pure or that import impurity.The growing n-type epitaxially grown layer 42 (2 * 10 above that 17Cm -3, 1100 ).Whole with about 100 s to 200 s thick direct ion injected with silicon nitride film 53 coverings thereafter.
Whole is provided with protective layer 54, implements the lithographic procedures of optionally predetermined source region 56, drain region 57, the wiring layer of being scheduled to 62 and the protective layer 54 on the joining zone 70 being windowed.Then with this protective layer 54 as mask; in predetermined source region 56 and drain region 57, predetermined wiring layer 62 and n type epitaxially grown layer 42 surfaces under the joining zone 70; the ion of the impurity (29Si+) of n type is authorized in injection; therefore; form source region 56, the drain region 57 of n+ type; on predetermined joining zone 70 and n type epitaxially grown layer 42 surfaces under the wiring layer 62, form area with high mercury 60,61 simultaneously.
Channel layer 52 adjacency that source region 56 and drain region 57 and n type epitaxially grown layer 42 form.Expression 1 group of source electrode, drain region 56,57 and ditch conducting shell 52 among Fig. 1, but in practice with source region 56 and drain region 57 as common, the FET ditch that forms a plurality of adjacency is led zone 44.
If n type epitaxially grown layer 42 is utilized as channel layer 52, the situation that forms FET ditch conducting shell with utilizing ion to inject compares, and has very big advantage.
That is: utilize ion inject to form channel layer after, the section of impurity concentration is the mountain type in the channel layer, if but make n type epitaxial growth layer growth, then the concentration homogeneous of channel layer.For example if same pinch-off voltage, same grid are wide, the FET one side Idss that has the channel layer that is made of n type epitaxially grown layer so will increase.In addition, if same Idss, same grid are wide, have FET one side of the channel layer that is made of n type epitaxially grown layer so, pinch-off voltage just can diminish.For example, be used for the FET of switching circuit, its maximum linear input power, at signal transmitter side (ON side) FET, if Idss is big, power also increases, and accepts side (OFF side) FET at signal, and the formation that pinch-off voltage is little can be born powerful FET.
That is to say, inject comparing of forming, utilize n type epitaxially grown layer to form a side of raceway groove,, the maximum linear input power is increased as the FET that adopts at switching circuit with utilizing ion.
And, if same pinch-off voltage, same Idss, then,, can suppress the leakage of high-frequency signal so parasitic energy can reduce because grid is wide can diminish, can improve level of isolation.
In addition, be not limited to the switch purposes, for example be used for the FET of amplifier, also have the little all right advantage of amplifier characteristic of pinch-off voltage.
At this, importantly, area with high mercury 60,61 will be removed protective layer 54 to expose from predetermined contact electrode 70 and wiring layer 62.Therefore under contact electrode 70 that forms by subsequent handling and wiring layer 62, form the area with high mercury 60,61 bigger than those zones
Substrate surface is a n type epitaxially grown layer, so channel layer 44 must be separated with other zones, the substrate surface beyond the channel layer 44 is provided with insulating barrier 45 in subsequent handling.This insulating barrier 45 is the epitaxially grown layers that foreign ions such as boron injected n type epitaxially grown layer.So be not electric insulation layer completely, withstand voltage is limited.In other words, can think,,, when depletion layer arrives the electrode of adjacency or wiring layer, just be contained in this and produce high-frequency signal and leak then because the variation of the depletion layer distance of corresponding high-frequency signal if contact electrode or wiring layer directly are set on this.
But if the GaAs surface under contact electrode 70 and wiring layer 62 is provided with n+ type area with high mercury 60,61, so, impurity concentration increases that (ionic species is 29Si+, and concentration is 1-5 * 10 8Cm -3).Therefore, wiring layer 62 and contact electrode 70 separate with insulating barrier 45, and depletion layer does not extend to insulating barrier 45, so the distance that the contact electrode 70 of adjacency, wiring layer 62 can be mutual is significantly near being provided with.
Specifically, can extrapolate, be 4 μ m if make spacing distance, just can fully guarantee the level of isolation that 20dB is above.In addition, we know, even in analog electromagnetic field, if the spacing distance of 4 μ m is set, also can obtain the insulation resistance of 40dB under 2.4GHz.
In other words, under contact electrode 70 and wiring layer 62, it is bloated from these zones, can fully guarantee level of isolation, so can remove the nitride film that is provided with for safety at present by area with high mercury 60,61 is set.
If do not need nitride film, just need not consider the situation of nitride film cracking when closing line press-fits, so just can save essential gold-plated process at present.Gold-plated process is the operation that operation quantity is many, cost is high, so if omit this operation, just can simplify manufacturing process, cutting down cost significantly significantly.
And, even make the contact electrode 70 that adjoins each other or the spacing distance of wiring layer 62 be close to 4 μ m, also can fully guarantee the level of isolation of 20dB.For example, nearly account in half such compound semi-conductor device of semiconductor chip at 5 contacts, chip size can reduce significantly, can realize the low price of compound semi-conductor device.
In addition, shown in Fig. 1 (b), also can constitute about pure epitaxially grown layer 43 to 1000 of epitaxially grown layer surface lamination of FET portion channel layer 52.As described later in detail, form in the operation, when grid is imbedded, grid is embedded near the lower end of pure epitaxially grown layer 43 always, therefore, can form the grid that suppresses parasitic capacity at grid.Therefore, pure epitaxially grown layer 43 both can be GaAs, also can be InGaP.
Second operation of the present invention is: as shown in Figure 2, form insulating barrier 45 on described channel region 44 and described area with high mercury 60,61 whole removing.
As previously mentioned,, n+ type area with high mercury is set optionally at n type epitaxially grown layer 42, because channel region 44 and area with high mercury 60,61 are being set, so they must be separated.In other words, implement photoetching process, at whole new protective layer 58 is set, optionally the protective layer 58 under the channel region 44 and wiring layer with FET, on the described area with high mercury 60,61 under the contact electrode is windowed.Then with this protective layer 58 as mask, on the GaAs surface, with dosage (dose amount) 1 * 10 13Cm -2, the ion that accelerating voltage 100KeV carries out impurity (B+ or H+) injects.Afterwards, remove protective layer 58, carry out activate annealing.Therefore, source electrode and drain region 56,57 and area with high mercury 60,61 are activated, and form the insulating barrier 45 that channel region 44 is separated with area with high mercury 60,61.As previously mentioned, this insulating barrier 45 is not an electric insulation layer, but the epitaxially grown layer of implanting impurity ion.
The 3rd operation of the present invention is, as shown in Figure 3, in described source region 56 and drain region 57, adheres to the Resistiue metal layers 64 as the ground floor electrode, forms first source electrode 65 and first drain electrode 66.
At first, implement optionally will to form the first predetermined source electrode 65 and first lithographic procedures that 66 part windows that drains.Utilize CF 4Plasma is removed the silicon nitride film 53 that is positioned in the first predetermined source electrode 65 and first drain electrode 66, and 3 layers of will constitute Resistiue metal layers 64 then are AnGe/Ni/Au vacuum evaporation lamination successively.Remove protective layer 63 afterwards, utilization is peeled off, and keeps first source electrode 65 and first drain electrode 66 of contact on source region 56 and drain region 57.Then utilize alloying heat treatment, form first source electrode 65 and source region 56, and first drain electrode 66 and the resistance junction of drain region 57.
The 4th operation of the present invention is, to shown in Figure 6, on described channel layer 52 and described area with high mercury 60,61, adheres to the grid metal level 68 as second layer electrode as Fig. 4, forms grid 69, the first contact electrode 70 and wiring layer 62.
This operation is exactly the operation as the present invention's second feature.As first embodiment, at first, in Fig. 4, implement lithographic procedures, optionally with predetermined grid 69, contact electrode 70, and wiring layer 62 parts window.Will from predetermined grid 69, contact electrode 70, and the silicon nitride film 53 that exposes of wiring layer 62 parts carry out dry ecthing, expose the channel layer 52 of predetermined grid 69 parts, expose the GaAs of predetermined wiring layer 62 and predetermined contact electrode 70 parts.
The peristome that makes predetermined grid 69 parts is 0.5 μ m, can form tiny grid 69.As described in first operation, utilize area with high mercury 60,61 is set, can remove and be used to guarantee the necessary nitride film of level of isolation at present, so the impact in the time of just can be owing to the press fit engagement line makes nitride film and substrate cracking.
In Fig. 5, will form grid 69, wiring layer 62 and the first contact electrode 70 as the grid metal level 68 of second layer electrode attached on channel layer 52 and the GaAs that exposes.
That is: at GaAs; vacuum evaporation constitutes as these three layers of the Ti/Pt/Au of the grid metal level 68 of second layer electrode successively; remove protective layer 63 afterwards,, form grid 69 and the first contact electrode 70 and the wiring layer 62 of the long 0.5 μ m of grid that contacts with channel layer 52 by peeling off.
In addition, as second embodiment of this operation, as shown in Figure 6, it is also passable that the part of grid 69 is imbedded raceway groove 52.At this moment, as grid metal level 68, with these four layers of Pt/Ti/Pt/Au vacuum evaporation lamination successively.By peeling off, form grid 69, the first contact electrode 70 and wiring layer 62 afterwards, afterwards, implement the heat treatment that Pt is imbedded.Therefore, shown in Fig. 6 (a), grid 69 is imbedded channel layer 52 in the maintenance and the state next part of the schottky junction of GaAs.Therefore, the degree of depth of channel layer 52 at this moment when the n of first operation type epitaxially grown layer 42 laminations, has been considered the amount of imbedding of this grid 69, can access required FET characteristic.
Channel layer 52 surfaces (for example about surperficial 500 -1000 of distance) produce the nature depletion layer, or owing to be the uneven zone of crystallization etc., electric current does not flow, and raceway groove is invalid.Utilization is imbedded channel region 52 with the part of grid 69, and the part that electric current flows under the grid 69 descends downwards from channel region 52 surfaces.Channel region 52 is for obtaining required FET characteristic, considers the amount of burying underground of grid 69 and forms more deeply, therefore, can effectively apply flexibly as raceway groove.Specifically, has the advantage of significantly improving current density, channel resistance and high frequency waves distortion performance.
In addition, as described in first operation of the present invention, shown in Fig. 6 (b), on n type epitaxially grown layer 42, also can lamination GaAs or the pure epitaxially grown layer 43 of InGAP.In fact the part as FET work is the part that grid 69 contacts with channel region 52, so, when imbedding grid 69, its sidewall constitutes parasitic capacity increases part, therefore, by pure epitaxially grown layer 43 is set, grid 69 is embedded near its bottom, be suppressed at the parasitic capacity of grid 69 sidewalls, can bring into play the effect that grid 69 is imbedded better.
No matter under which kind of situation, owing to can remove nitride film under contact electrode 70 and the wiring layer 62, so do not produce the situation of cracking.In addition, though also must be used for preventing electrostatic damage at present and guarantee level of isolation, utilization is arranged on area with high mercury 60,61 under the contact electrode 70 and reaches under the wiring layer 62, can suppress the expansion of depletion layer, guarantees the level of isolation of stipulating.
Like this, if do not need nitride film, just the gold-plated process that is used for suppressing its cracking needn't be set, so can reduce cost significantly, manufacturing process also can simplify.
The 5th operation of the present invention is, as shown in Figures 7 and 8, on described first source electrode 65 and first drain electrode, the 66 and first contact electrode 70, adhere to contact metal layer 74 as triple electrode, form second source electrode and second drain electrode, 75, the 76 and second contact electrode 77.
Among Fig. 7, the passivating film 72 on first source electrode 65 and first drain electrode, the 66 and first contact electrode 70 forms connection holes.
After grid 69, wiring layer 62 and the first contact electrode 70 formed, in order to protect the channel layer 52 of grid 69 peripheries, the passivating film 72 that substrate 51 surfaces are formed by silicon nitride film covered.On this passivating film 72, implement lithographic procedures, optionally to first source electrode 65, first drain electrode 66 and with the connection part of the first contact electrode 70, carry out windowing of diaphragm, with passivating film 72 dry ecthings of this part.Remove protective layer 71 afterwards.
Among Fig. 8, on first source electrode 65 and first drain electrode, the 66 and first contact electrode 70, adhere to contact metal layer 74, form second source electrode 75 and second drain electrode, the 76 and second contact electrode 77 as triple electrode.
51 whole of substrates, apply new protective layer 73, implement lithographic procedures, implement the lithographic procedures of optionally protective layer that gives on second fixed source electrode 75 and second drain electrode, the 76 and second contact electrode 77 being windowed.Then, to form as these three layers of the Ti/Pt/Au of the contact metal layer 74 of triple electrode, the vacuum evaporation lamination forms and first source electrode 65, first drain electrode 66 and second source electrode 75 that connects with the first contact electrode 70 and second drain electrode, the 76 and second contact electrode 77 successively.Contact metal layer 74 other parts attached on the protective layer 73, so remove protective layer 73,, only keep second source electrode 75, second drain electrode, the 76 and second contact electrode 77, other remove by peeling off.In addition, local distribution part forms with this contact metal layer 74, so will keep the contact metal layer 74 of its distribution part certainly.
The 6th operation of the present invention is, as shown in Figure 9, and press fit engagement line 80 on the second contact electrode 77.Fig. 9 (a) is the situation of the first embodiment of the present invention, and Fig. 9 (b) is of the present invention second
The situation of embodiment.
This operation utilizes area with high mercury 60,61 can remove nitride film under the first contact electrode 70 and the second contact electrode 77 as previously mentioned, so crack can prevent the press fit engagement line time.
Before finishing, compound semiconductor switched circuit device after the operation, moves on to the back operation of assembling.The semiconductor chip of sheet is separated into single semiconductor chip by stripping and slicing, and this semiconductor chip is fixed on framework (not diagram) afterwards, connects second contact electrode 77 of semiconductor chip and the lead-in wire of regulation (not diagram) with closing line 80.Adopt thin gold thread as closing line 80, connect with known ball bond.Transmit mould mould dress afterwards, implement resin-encapsulated.
In addition, area with high mercury shown in Figure 10 (a) and (b), also can utilize lithographic procedures, optionally diaphragm is windowed, and is set to a part and is exposing under predetermined wiring layer 62 all ends and under predetermined contact electrode 70 all ends.At this moment, under contact electrode 70 and the wiring layer 62, constitute insulating barrier 45, still, utilize area with high mercury 60,61, can prevent that the high-frequency signal that is applied to contact is sent to wiring layer 62 by insulating barrier 45.
The configuration example of Figure 10 (c) expression area with high mercury 60,61.Area with high mercury 60,61 also can resemble with contact electrode 70 and wiring layer 62 encirclements and be provided with, and also can be provided with as Figure 10 (c).Just, contact electrode 70a is provided with area with high mercury 60 along 3 limits except that the top, and contact electrode 70b removes the bight of GaAs substrate, along irregular pentagonal 4 limits, area with high mercury 60 is set the C font.The part of area with high mercury 60 is not set, and all is the part towards the Zhou Duan of GaAs substrate, even depletion layer expansion also has sufficient spacing distance with the contact or the distribution of adjacency, is that leak can debatable part.
In addition, area with high mercury 61 optionally is arranged near the wiring layer of contact electrode 70a, 70b side 62 times.
This is a routine distribution example, is sent to wiring layer 62 as long as can prevent the high-frequency signal that puts on contact electrode 70 by insulating barrier 45.In addition, in Figure 10, omitted, but as the second embodiment of the present invention, also grid 69 can have been imbedded channel layer 52 surfaces.
As described in detail above, can obtain following effect according to the present invention.
The first, utilize the area with high mercury that is arranged on substrate, contact electrode and wiring layer and substrate or insulation Layer can separate, so, can remove the at present nitride film for guaranteeing that fully level of isolation arranges. As Fruit does not need nitride film, just can economize the cracking of nitride film when slightly preventing from engaging and the gold-plated process that carries out. Gold-plated process, operation quantity is many, and cost is also high, so if omit this operation, just can be real with low cost The manufacture method of the compound semi-conductor device of existing process simplification.
The second, utilize area with high mercury, can carry out insulating barrier and separate, prevent insulation breakdown and interference, Can dwindle significantly the spacing distance that adjoins each other, particularly when guaranteeing the level of isolation of 20dBm, Can be close to 4 μ m configuration, go far towards chip size and dwindle, in other words, can be with low cost Make high-quality compound semi-conductor device.
The 3rd, provide a kind of manufacture method of compound semi-conductor device, the grid metal level adopts Pt/Ti/Pt/Au utilizes heat treatment, and the part of grid is imbedded channel layer, can make electricity under the grid The part that stream flows descends from the channel layer surface. Channel surface is to utilize the nature depletion layer invalid as raceway groove The zone, utilize grid to imbed raceway groove is effectively applied flexibly, so it is close to improve significantly electric current Degree, channel resistance and high frequency distortion characteristic.
The 4th, utilize the channel layer that forms FET with the epitaxially grown layer of N-shaped, can increase Idss and Reduce pinch-off voltage. Therefore, for example at the FET that is used for on-off circuit, can realize by maximum linear The increase of input power, wide the dwindling of grid and improve level of isolation. In addition, be not limited to the switch purposes, When namely being used in amplifier, as long as can reduce pinch-off voltage, just can improve the quality characteristic of amplifier.
The 5th, provide a kind of manufacture method of compound semi-conductor device, have the following advantages, utilize With the part of burying the channel layer grid underground as pure epitaxially grown layer, by 2 sections epitaxially grown layer constituting channels Layer can when burying grid underground, be suppressed at the generation of the parasitic capacity of side. In other words, can improve work Quality characteristic for FET.

Claims (14)

1, a kind of manufacture method of compound semi-conductor device is characterized in that, comprises following operation:
Adhere at the epitaxially grown layer to a conductivity type before the operation of the Resistiue metal layers that forms as the ground floor electrode, the epitaxial growth laminar surface under predetermined joining zone forms a conductive high concentration zone;
The insulating barrier of formation and described area with high mercury adjacency;
On described area with high mercury, adhere to described grid metal level, form the first contact electrode;
On the described first contact electrode, adhere to the contact metal layer, form the second contact electrode;
Press fit engagement line on the described second contact electrode.
2, a kind of manufacture method of compound semi-conductor device is characterized in that, comprises following operation:
Adhere at the epitaxially grown layer to a conductivity type before the operation of the Resistiue metal layers that forms as the ground floor electrode, the epitaxial growth laminar surface reaching under the predetermined joining zone under the predetermined wiring layer forms a conductive high concentration zone;
Between the area with high mercury of described adjacency, form insulating barrier;
On described area with high mercury, adhere to described grid metal level, form first contact electrode and the wiring layer;
On the described first contact electrode, adhere to the contact metal layer, form the second contact electrode;
Press fit engagement line on the described second contact electrode.
3, a kind of manufacture method of compound semi-conductor device is characterized in that, comprises following operation:
A lamination resilient coating and a conductivity type epitaxially grown layer on the GaAs substrate, source electrode and drain region are set, with the channel layer adjacency that forms by a described conductivity type epitaxially grown layer, form the channel region of FET, under predetermined joining zone, form area with high mercury simultaneously;
Form insulating barrier removing on described channel region and described area with high mercury whole;
In described source electrode and drain region, adhere to Resistiue metal layers as the ground floor electrode, form first source electrode and first drain electrode;
On described channel layer and described area with high mercury, adhere to grid metal level as second layer electrode, form the grid and the first contact electrode;
On described first source electrode and first drain electrode and the first contact electrode, adhere to the contact metal layer as triple electrode, form second source electrode and second drain electrode and the second contact electrode;
Press fit engagement line on the described second contact electrode.
4, a kind of manufacture method of compound semi-conductor device is characterized in that, comprises following operation:
A lamination resilient coating and a conductivity type epitaxially grown layer on the GaAs substrate, source electrode and drain region are set,, form the channel region of FET with the channel layer adjacency that forms by a described conductivity type epitaxially grown layer, under the predetermined joining zone and under the predetermined wiring layer, form area with high mercury simultaneously;
Form insulating barrier removing on described channel region and described dense height zone whole;
In described source electrode and drain region, adhere to Resistiue metal layers as the ground floor electrode, form first source electrode and first drain electrode;
On described channel layer and described area with high mercury, adhere to grid metal level as second layer electrode, form the grid and first contact electrode and the wiring layer;
On described first source electrode and first drain electrode and the first contact electrode, adhere to contact metal layer as triple electrode, form second source electrode and second drain electrode and the second contact electrode;
Press fit engagement line on the described second contact electrode.
5, the manufacture method of claims 3 or 4 described compound semi-conductor devices is characterized in that, described resilient coating utilizes the epitaxial growth layer growth and forms.
6, the manufacture method of claims 1 or 3 described compound semi-conductor devices is characterized in that: described area with high mercury exposes setting from described contact electrode.
7, the manufacture method of claims 2 or 4 described compound semi-conductor devices is characterized in that, described area with high mercury exposes setting from described contact electrode and described wiring layer.
8, the manufacture method of claims 1 or 3 described compound semi-conductor devices is characterized in that, described area with high mercury is under all ends of described contact electrode, and a part is exposed setting from described contact electrode.
9, the manufacture method of claims 2 or 4 described compound semi-conductor devices, it is characterized in that, described area with high mercury is under all ends of described contact electrode and all ends of described wiring layer, and a part is exposed setting from described contact electrode and described distribution layer.
10, the manufacture method of claims 1 to 4 each described compound semi-conductor device is characterized in that, described insulating barrier utilizes ion to inject and is provided with.
11, the manufacture method of claims 1 to 4 each described compound semi-conductor device, it is characterized in that, described grid metal level comprises following operation, after the evaporation orlop is the metallized multilayer film of Pt, heat-treat, the part of described grid is imbedded a described conductivity type epitaxial growth laminar surface.
12, the manufacture method of claims 11 described compound semi-conductor devices is characterized in that, at described conductivity type epitaxially grown layer surface lamination free from admixture epitaxially grown layer, described grid is embedded near the described free from admixture epitaxially grown layer lower end.
13, the manufacture method of claims 12 described compound semi-conductor devices is characterized in that, described free from admixture epitaxially grown layer is formed by InGaP.
14, the manufacture method of claims 1 to 4 each described compound semi-conductor device is characterized in that, described area with high mercury is injected by ion and is provided with.
CNB021233152A 2001-06-18 2002-06-18 Method for producing compound semiconductor device Expired - Fee Related CN1187801C (en)

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