CN117795688A - 薄膜半导体开关器件 - Google Patents
薄膜半导体开关器件 Download PDFInfo
- Publication number
- CN117795688A CN117795688A CN202280055063.XA CN202280055063A CN117795688A CN 117795688 A CN117795688 A CN 117795688A CN 202280055063 A CN202280055063 A CN 202280055063A CN 117795688 A CN117795688 A CN 117795688A
- Authority
- CN
- China
- Prior art keywords
- source
- thin film
- film transistor
- interface member
- channel interface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/427—Power or ground buses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W42/00—Arrangements for protection of devices
- H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/297—Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
Landscapes
- Thin Film Transistor (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163221292P | 2021-07-13 | 2021-07-13 | |
| US63/221,292 | 2021-07-13 | ||
| PCT/IB2022/056349 WO2023285936A1 (en) | 2021-07-13 | 2022-07-08 | Thin film semiconductor switching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117795688A true CN117795688A (zh) | 2024-03-29 |
Family
ID=84920064
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280055063.XA Pending CN117795688A (zh) | 2021-07-13 | 2022-07-08 | 薄膜半导体开关器件 |
| CN202280049363.7A Pending CN117616559A (zh) | 2021-07-13 | 2022-07-11 | 有源通孔 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280049363.7A Pending CN117616559A (zh) | 2021-07-13 | 2022-07-11 | 有源通孔 |
Country Status (7)
| Country | Link |
|---|---|
| US (6) | US20240332426A1 (https=) |
| EP (2) | EP4371160A4 (https=) |
| JP (4) | JP2024525817A (https=) |
| KR (4) | KR20250153317A (https=) |
| CN (2) | CN117795688A (https=) |
| CA (2) | CA3224433A1 (https=) |
| WO (2) | WO2023285936A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023285936A1 (en) | 2021-07-13 | 2023-01-19 | Zinite Corporation | Thin film semiconductor switching device |
| EP4640026A1 (en) * | 2022-12-23 | 2025-10-29 | Zinite Corporation | Thin film transistor |
| WO2024165987A1 (en) * | 2023-02-09 | 2024-08-15 | Zinite Corporation | Passivation elements of a thin film transistor |
| CN121175800A (zh) * | 2023-04-06 | 2025-12-19 | 任耐特公司 | 等温晶体管结构 |
| CN121014276A (zh) | 2023-04-18 | 2025-11-25 | 任耐特公司 | 氮化铪粘附层 |
| TW202505981A (zh) * | 2023-07-26 | 2025-02-01 | 日商半導體能源研究所股份有限公司 | 氧化物半導體層、氧化物半導體層的製造方法、半導體裝置及半導體裝置的製造方法 |
| US20250204015A1 (en) * | 2023-12-14 | 2025-06-19 | Zinite Corporation | Gate stack for field effect transistors |
| WO2025163584A1 (en) * | 2024-02-01 | 2025-08-07 | Zinite Corporation | Thin-film transistors with gate-source capacitance tuning |
| WO2026022653A1 (en) * | 2024-07-23 | 2026-01-29 | Zinite Corporation | Stackable and self-aligned tft structures |
| US20260032965A1 (en) * | 2024-07-25 | 2026-01-29 | Zinite Corporation | Thin-film transistors and related methods of manufacture with metal nitride source/drain |
Family Cites Families (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6501094B1 (en) * | 1997-06-11 | 2002-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a bottom gate type thin film transistor |
| US6603192B2 (en) | 1999-07-30 | 2003-08-05 | Stmicroelectronics, Inc. | Scratch resistance improvement by filling metal gaps |
| US20070194450A1 (en) * | 2006-02-21 | 2007-08-23 | Tyberg Christy S | BEOL compatible FET structure |
| KR101513601B1 (ko) * | 2008-03-07 | 2015-04-21 | 삼성전자주식회사 | 트랜지스터 |
| KR101461127B1 (ko) * | 2008-05-13 | 2014-11-14 | 삼성디스플레이 주식회사 | 반도체 장치 및 이의 제조 방법 |
| KR100963027B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| US9082857B2 (en) * | 2008-09-01 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor layer |
| KR101525801B1 (ko) | 2008-11-14 | 2015-06-08 | 삼성디스플레이 주식회사 | 어레이 기판 및 그 제조 방법 |
| TWI372457B (en) * | 2009-03-20 | 2012-09-11 | Ind Tech Res Inst | Esd structure for 3d ic tsv device |
| US8013339B2 (en) * | 2009-06-01 | 2011-09-06 | Ishiang Shih | Thin film transistors and arrays with controllable threshold voltages and off state leakage current |
| WO2011027656A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and display device |
| KR102220606B1 (ko) | 2009-11-06 | 2021-03-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR20110074355A (ko) * | 2009-12-24 | 2011-06-30 | 삼성전자주식회사 | 트랜지스터 |
| US8809861B2 (en) | 2010-12-29 | 2014-08-19 | Stmicroelectronics Pte Ltd. | Thin film metal-dielectric-metal transistor |
| WO2012117439A1 (ja) * | 2011-02-28 | 2012-09-07 | パナソニック株式会社 | 薄膜半導体装置及びその製造方法 |
| KR102072244B1 (ko) * | 2011-11-30 | 2020-01-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| JP2013149827A (ja) * | 2012-01-20 | 2013-08-01 | Sony Corp | 薄膜トランジスタおよびその製造方法、並びに表示装置および電子機器 |
| US9054204B2 (en) * | 2012-01-20 | 2015-06-09 | Sony Corporation | Thin-film transistor, method of manufacturing the same, display unit, and electronic apparatus |
| JP5390654B2 (ja) * | 2012-03-08 | 2014-01-15 | 株式会社東芝 | 半導体装置の製造方法 |
| US20160315196A1 (en) * | 2012-04-13 | 2016-10-27 | The Governors Of The University Of Alberta | Buried source schottky barrier thin film transistor and method of manufacture |
| JP5972065B2 (ja) | 2012-06-20 | 2016-08-17 | 富士フイルム株式会社 | 薄膜トランジスタの製造方法 |
| US9685559B2 (en) * | 2012-12-21 | 2017-06-20 | The Regents Of The University Of California | Vertically stacked heterostructures including graphene |
| US8933564B2 (en) * | 2012-12-21 | 2015-01-13 | Intel Corporation | Landing structure for through-silicon via |
| JP2014229713A (ja) * | 2013-05-21 | 2014-12-08 | 独立行政法人産業技術総合研究所 | 半導体装置および半導体装置の製造方法 |
| CA2932446A1 (en) * | 2013-12-04 | 2015-06-11 | The Governors Of The University Of Alberta | Buried source schottky barrier thin film transistor and method of manufacture |
| JP2016146422A (ja) * | 2015-02-09 | 2016-08-12 | 株式会社ジャパンディスプレイ | 表示装置 |
| WO2016128859A1 (en) * | 2015-02-11 | 2016-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9761732B2 (en) * | 2015-02-25 | 2017-09-12 | Snaptrack Inc. | Tunnel thin film transistor with hetero-junction structure |
| US10217819B2 (en) * | 2015-05-20 | 2019-02-26 | Samsung Electronics Co., Ltd. | Semiconductor device including metal-2 dimensional material-semiconductor contact |
| DE112015006960T5 (de) * | 2015-09-25 | 2018-06-07 | Intel Corporation | Lang-kanal-mos-transistoren für kriechverlustarme anwendungen auf einem kurz-kanal-cmos-chip |
| WO2017061050A1 (ja) * | 2015-10-09 | 2017-04-13 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
| US9954101B2 (en) * | 2016-06-15 | 2018-04-24 | International Business Machines Corporation | Precise junction placement in vertical semiconductor devices using etch stop layers |
| US9685484B1 (en) * | 2016-07-20 | 2017-06-20 | Sandisk Technologies Llc | Reversible resistivity memory with crystalline silicon bit line |
| CN109643742B (zh) * | 2016-08-26 | 2024-09-27 | 英特尔公司 | 集成电路器件结构和双侧制造技术 |
| KR102603300B1 (ko) * | 2016-12-30 | 2023-11-15 | 엘지디스플레이 주식회사 | 박막 트랜지스터, 그의 제조방법, 및 그를 포함하는 유기발광 표시장치 |
| JP7086488B2 (ja) | 2017-03-21 | 2022-06-20 | 日本化薬株式会社 | 有機半導体組成物、有機薄膜及び有機薄膜トランジスタ |
| CN111052395A (zh) * | 2017-08-31 | 2020-04-21 | 美光科技公司 | 半导体装置、晶体管以及用于接触金属氧化物半导体装置的相关方法 |
| US11227953B2 (en) | 2017-11-29 | 2022-01-18 | Japan Science And Technology Agency | Tunneling field effect transistor |
| CN108109996B (zh) * | 2017-12-15 | 2021-06-22 | 西安科锐盛创新科技有限公司 | 基于二极管的集成电路抗静电转接板及其制备方法 |
| CN108091624B (zh) * | 2017-12-15 | 2020-12-22 | 浙江清华柔性电子技术研究院 | 用于系统级封装的硅通孔转接板 |
| GB2571351A (en) * | 2018-02-27 | 2019-08-28 | Univ Manchester | Device and method |
| US11264512B2 (en) * | 2018-06-29 | 2022-03-01 | Intel Corporation | Thin film transistors having U-shaped features |
| WO2020043089A1 (en) * | 2018-08-31 | 2020-03-05 | Changxin Memory Technologies, Inc. | Through-silicon via (tsv) fault-tolerant circuit, method for tsv fault-tolerance and integrated circuit (ic) |
| US20200083259A1 (en) | 2018-09-11 | 2020-03-12 | HKC Corporation Limited | Array substrate, method for fabricating array substrate, and display |
| US11255902B2 (en) * | 2018-09-21 | 2022-02-22 | Micron Technology, Inc. | Apparatuses for selective TSV block testing |
| US11527656B2 (en) * | 2018-09-25 | 2022-12-13 | Intel Corporation | Contact electrodes for vertical thin-film transistors |
| US11335789B2 (en) * | 2018-09-26 | 2022-05-17 | Intel Corporation | Channel structures for thin-film transistors |
| US11417770B2 (en) * | 2018-09-26 | 2022-08-16 | Intel Corporation | Vertical thin-film transistors between metal layers |
| KR102718050B1 (ko) * | 2018-10-25 | 2024-10-15 | 엘지디스플레이 주식회사 | 트랜지스터 및 전자장치 |
| US20200167658A1 (en) | 2018-11-24 | 2020-05-28 | Jessica Du | System of Portable Real Time Neurofeedback Training |
| GB201819570D0 (en) * | 2018-11-30 | 2019-01-16 | Univ Surrey | Multiple-gate transistor |
| US10818324B2 (en) * | 2018-12-18 | 2020-10-27 | Micron Technology, Inc. | Memory array decoding and interconnects |
| US11659722B2 (en) * | 2018-12-19 | 2023-05-23 | Intel Corporation | Thin-film-transistor based complementary metal-oxide-semiconductor (CMOS) circuit |
| JP7655853B2 (ja) * | 2019-02-11 | 2025-04-02 | サンライズ メモリー コーポレイション | 垂直型薄膜トランジスタ、及び、垂直型薄膜トランジスタの、３次元メモリアレイのためのビット線コネクタとしての応用メモリ回路方法 |
| KR102711918B1 (ko) * | 2019-12-27 | 2024-09-27 | 엘지디스플레이 주식회사 | 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치 |
| DE102021104070A1 (de) | 2020-05-28 | 2021-12-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleiterchip |
| WO2023285936A1 (en) | 2021-07-13 | 2023-01-19 | Zinite Corporation | Thin film semiconductor switching device |
-
2022
- 2022-07-08 WO PCT/IB2022/056349 patent/WO2023285936A1/en not_active Ceased
- 2022-07-08 KR KR1020257033608A patent/KR20250153317A/ko active Pending
- 2022-07-08 CN CN202280055063.XA patent/CN117795688A/zh active Pending
- 2022-07-08 EP EP22841576.6A patent/EP4371160A4/en active Pending
- 2022-07-08 JP JP2024502119A patent/JP2024525817A/ja active Pending
- 2022-07-08 KR KR1020247002156A patent/KR102870900B1/ko active Active
- 2022-07-08 CA CA3224433A patent/CA3224433A1/en active Pending
- 2022-07-08 US US18/576,205 patent/US20240332426A1/en active Pending
- 2022-07-11 EP EP22841579.0A patent/EP4371152A4/en active Pending
- 2022-07-11 JP JP2024502139A patent/JP7779997B2/ja active Active
- 2022-07-11 KR KR1020257033605A patent/KR20250153316A/ko active Pending
- 2022-07-11 CN CN202280049363.7A patent/CN117616559A/zh active Pending
- 2022-07-11 WO PCT/IB2022/056397 patent/WO2023285951A1/en not_active Ceased
- 2022-07-11 CA CA3224452A patent/CA3224452A1/en active Pending
- 2022-07-11 KR KR1020247003461A patent/KR102870896B1/ko active Active
-
2023
- 2023-10-26 US US18/384,066 patent/US11949019B2/en active Active
-
2024
- 2024-01-03 US US18/403,268 patent/US12148838B2/en active Active
- 2024-09-30 US US18/902,625 patent/US20250022961A1/en active Pending
-
2025
- 2025-02-21 US US19/060,198 patent/US12446258B2/en active Active
- 2025-08-15 US US19/301,777 patent/US12593467B2/en active Active
- 2025-11-05 JP JP2025186357A patent/JP2026027346A/ja active Pending
- 2025-11-25 JP JP2025203212A patent/JP2026027531A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW202303992A (zh) | 2023-01-16 |
| CA3224452A1 (en) | 2023-01-19 |
| EP4371152A1 (en) | 2024-05-22 |
| KR20240032856A (ko) | 2024-03-12 |
| KR20250153316A (ko) | 2025-10-24 |
| US20240055529A1 (en) | 2024-02-15 |
| KR20250153317A (ko) | 2025-10-24 |
| CA3224433A1 (en) | 2023-01-19 |
| US12148838B2 (en) | 2024-11-19 |
| US20250234589A1 (en) | 2025-07-17 |
| US12446258B2 (en) | 2025-10-14 |
| EP4371152A4 (en) | 2025-06-04 |
| WO2023285936A1 (en) | 2023-01-19 |
| JP2026027531A (ja) | 2026-02-18 |
| US11949019B2 (en) | 2024-04-02 |
| US20250380453A1 (en) | 2025-12-11 |
| US20240136330A1 (en) | 2024-04-25 |
| EP4371160A4 (en) | 2025-11-26 |
| WO2023285951A1 (en) | 2023-01-19 |
| JP2024525817A (ja) | 2024-07-12 |
| JP2026027346A (ja) | 2026-02-18 |
| US20250022961A1 (en) | 2025-01-16 |
| US12593467B2 (en) | 2026-03-31 |
| CN117616559A (zh) | 2024-02-27 |
| KR20240035497A (ko) | 2024-03-15 |
| KR102870896B1 (ko) | 2025-10-14 |
| US20240332426A1 (en) | 2024-10-03 |
| TW202303897A (zh) | 2023-01-16 |
| JP7779997B2 (ja) | 2025-12-03 |
| KR102870900B1 (ko) | 2025-10-15 |
| EP4371160A1 (en) | 2024-05-22 |
| JP2024525824A (ja) | 2024-07-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102870900B1 (ko) | 박막 반도체 스위칭 장치 | |
| JP4919811B2 (ja) | ドープされた部分を有する堆積チャネル領域を含むトランジスタ | |
| JP4717855B2 (ja) | 静電的に制御されるトンネリング・トランジスタ | |
| KR20210095459A (ko) | 이차원 물질로 이루어진 게이트 절연막을 포함하는 전계 효과 트랜지스터 | |
| US9040948B2 (en) | Nanoscale switching device | |
| US6555393B2 (en) | Process for fabricating a field-effect transistor with a buried Mott material oxide channel | |
| KR101805827B1 (ko) | 트랩층을 포함하는 부성 미분 저항 소자 및 그 제조 방법 | |
| CN209515677U (zh) | 半导体功率器件 | |
| US8907381B2 (en) | Reduced short channel effect of III-V field effect transistor via oxidizing aluminum-rich underlayer | |
| US6259114B1 (en) | Process for fabrication of an all-epitaxial-oxide transistor | |
| US20240213370A1 (en) | Thin film transistor | |
| US11258009B2 (en) | Switching atomic transistor and method for operating same | |
| TWI916594B (zh) | 薄膜半導體切換設備 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |