CN1172345A - 抗裂半导体封装,其制造方法以及所用制造设备 - Google Patents

抗裂半导体封装,其制造方法以及所用制造设备 Download PDF

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CN1172345A
CN1172345A CN97103714A CN97103714A CN1172345A CN 1172345 A CN1172345 A CN 1172345A CN 97103714 A CN97103714 A CN 97103714A CN 97103714 A CN97103714 A CN 97103714A CN 1172345 A CN1172345 A CN 1172345A
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coated film
semiconductor chip
encapsulation
lead
lamp
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CN1092398C (zh
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崔信
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SK Hynix Inc
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Abstract

一种改进的抗裂半导体封装、其制造方法及所用制造设备,用聚亚酰胺类材料依次涂敷装于半导体封装中的芯片、引线框的垫片、连线和焊膏,用作充当缓冲部件的涂敷材料,从而能防止层间分离和破裂。制造半导体封装的方法包括以下步骤:将半导体芯片贴到垫片上,电连接半导体芯片和引线,在半导体芯片和引线的表面上形成涂敷膜,并模制半导体芯片、引线和涂敷膜。

Description

抗裂半导体封装、其制造方法以及所用制造设备
本发明涉及一种能防止其中的破裂的半导体封装、其制造方法及所用设备，特别涉及一种能防止其中的破裂的改进半导体封装、其制造方法及所用设备，在芯片键合和/或引线键合后，用由聚亚酰胺类材料制的涂敷液进行涂敷工艺，从而能防止层间分离和破裂。
在各种半导体封装中，如图1所示的普通半导体封装包括由粘结剂3固定于引线框的垫片2上的半导体芯片1。用连线5连接半导体芯片1的焊盘与引线框的内引线4a。然后，用模制树脂将上述部件密封包装，并将外引线4b成形。
常规芯片上引线(LOC)型封装中，如图2所示，内引线13a直接由双面胶绝缘带12贴在半导体芯片11的上面，并通过连线14与形成于半导体芯片11中部的芯片焊盘(未示出)电连接。模制树脂15封装芯片11、内引线13a和连线14，并按用户的要求将外引线13b成形。
然而，上述半导体封装有以下缺点，即由于芯片1与垫片2之间及垫片2和/或芯片1、11与模制树脂6、15之间不同材料的热膨胀系数不匹配，可能发生层间分离和破裂。另外，这种层间分离和破裂会随生产工艺持续时间加长而越来越严重，从而会使器件的可靠性下降。
因此，为了克服上述问题，已进行了大量研究工作。在这些研究中，已投入工业生产的是增强模树脂密封材料的强度和粘性的方法。另外，美国专利5434106介绍了一种在半导体芯片的没有形成电路的不起作用表面上涂敷氨基丙三乙氧基甲硅烷膜的方法。
然而，这限制了模制树脂强度的增加。另外，随着硬度的增加，更容易破裂。在增强模制树脂的粘性时，无法适当地喷射和清除模制的封装，并且会产生许多毛刺，而因毛刺的粘性增强，所以很难去除。
另外，根据上述美国专利，涂敷LOC型封装的半导体芯片的下部的方法只限于在半导体芯片上涂敷防止层间分离/破裂的防护区的表面，但收效甚微。另外，在对晶片进行背面抛光后，要另外进行涂敷工艺，这使生产工艺变得更复杂。
因此，本发明的目的在于提供一种抗裂半导体封装、该封装的制造方法及所用制造设备，克服常规半导体封装和制造设备中的问题。
本发明的另一目的是提供一种改进的抗裂半导体封装、该封装的制造方法及所用制造设备，用聚亚酰胺类材料依次涂敷装于半导体封装中的芯片、引线框的垫片、连线和焊膏，用作充当缓冲部件的涂敷材料，从而能防止层间分离和破裂。
为了实现上述目的，提供一种能防裂的半导体封装制造方法，包括以下步骤：将半导体芯片贴到垫片上，电连接半导体芯片和引线，在半导体芯片和引线的表面上形成涂敷膜，并模制半导体芯片、引线和涂敷膜。
为了实现上述目的，提供一种能防裂的半导体封装制造设备，包括：发热的加热部件，移动加热部件的移动部件，及控制加热部件的On/Off操作和移动部件的运动的控制部件。
参考以下的详细说明和只是说明性的附图，会更充分地理解本发明，但本发明并不限于此。其中：
图1是展示常规半导体封装的剖面图；
图2是展示常规芯片上引线(LOC)型半导体封装的剖面图；
图3A-3D是展示根据本发明的半导体封装制造方法的剖面图；
图4是根据本发明用于半导体封装的涂敷设备的透视图；
图5是根据本发明用于半导体封装的固化设备的透视图。
下面将参照各附图说明本发明的半导体封装制造方法和制造设备。
首先，参照图3A-3D说明如何制造抗裂半导体封装。
如图3A所示，将半导体芯片23贴到引线框的垫片21上表面，并用导电连线24电连接半导体芯片23和内引线25。
如图3B所示，在半导体芯片23、引线框的垫片21、内引线25和连线24的整个表面上喷涂掺了自粘性促进剂型材料的聚亚酰胺前体制成的涂敷液，从而在所说部件上涂敷低浓度液态涂敷膜26。另外，如图3C所示，使涂敷步骤形成的涂敷膜26固化。进行固化工艺用了红外灯，为的是使涂敷膜26能在强红外线所发热28的作用下固化。
上述固化工艺完成后，如图3D所示，用模制树脂封装半导体芯片23、垫片21、内引线25和连线24，形成所要求形状的壳体。然后，修整不必要部分和将外引线30成形，从而制造出半导体封装。
在涂敷工艺中，涂敷膜26的厚度最好是2-30微米，涂敷液27的粘度为10-20泊，固化温度为300-450℃，固化时间为40-120秒。涂敷液由掺自粘性促进剂型材料的聚亚酰胺前体制成。另外，固化工艺用的固化设备中的红外灯可上、下、前、后、左、右移动。红外灯置于能保证加热区的最高温度为500℃的涂敷部分与红外灯相距最远处。
另外，形成涂敷膜26的方法不限于喷涂涂敷液27的方法。即，也可用滴涂装盛涂敷液27的容器中的涂敷液27或淀积涂敷液27的方法。涂敷膜26的材料既可以是聚亚酰胺，也可是环氧树脂，还可以是特氟隆(TM)。
如图3D所示，利用本发明半导体封装制造方法制造的半导体封装包括：垫片21；贴在垫片21上的半导体芯片23；从外部将电信号传入或将电信号传出的引线25；电连接半导体芯片23和引线25的导电连线24；形成于半导体芯片23、引线25和连线24表面上的涂敷膜26；及模制半导体芯片23、连线24、引线25和涂敷膜26的模制树脂29。
下面将参照图4和5说明本发明半导体封装制造设备。
图4示出了本发明半导体封装制造设备中的涂敷设备。如图所示，该设备包括存储液态涂敷材料并产生喷涂涂敷液的恒定压力的压力容器41、多个与压力容器41相连的喷涂部件42。
图5示出了本发明半导体封装制造设备中的固化设备。如图所示，其中有多个红外线灯51。红外灯51置于灯体52中。另外，红外灯51和灯体52构成发出强红外线辐射热的加热部件。
灯体52为盖形，其中安装灯51。在灯51接通时，灯体聚集并沿一定方向发送光和热。灯体52包括安装灯51的灯座52a、控制灯座52a按图中的双向箭头“  ”所指的一定方向运动的导轨52b。
移动轴53的一端垂直固定于灯体52的上表面上，另一端插在固定轴54的一端中，移动轴53可伸缩式向固定轴54内运动。固定轴54的另一端固定于控制部件55上。
移动轴53和固定轴54包括用于根据控制部件55的控制信号沿图中的双向箭头b所指示的一定方向移动加热部件的移动部件。
控制部件55与其中安装灯51的灯座52a电连接，控制灯51的On/Off操作和灯座52a及移动轴53的运动。信号输入单元55a置于控制部件55内，用于输入命令信号，例如，移动轴53和灯座52a的运动命令信号或灯51的On/Off操作命令信号。
下面将说明根据本发明的半导体封装、其制造方法及所用设备的实施情况。
首先，用粘结剂22将半导体芯片23贴到引线框的垫片21上。用连线24键合半导体芯片23和内引线25，并将工件传递到涂敷工艺区，该区中设置了具有压力容器41和喷涂部件42的涂敷设备。喷涂部件42向半导体芯片23、垫片21、连线24和内引线25表面喷涂存储于压力容器41中的涂敷液27，从而形成涂敷膜26。涂敷膜26厚约2-30微米。
然后，将涂敷过的组件传递到固化工艺区。这里，调节灯51和涂敷膜26之间的距离以便调节用于涂敷膜26的热量。驱动控制部件55，控制移动轴53的位置，依次调节灯体52使应用于涂敷膜26的红外线的温度达到最大值500℃。此时，同时调节灯座52a的位置，使灯51产生的红外线所发热能均匀地应用于涂敷膜26。
将应用于涂敷膜26的加热温度调节到最大值500℃的原因是由于各材料的特性要求贴芯片工艺中的最高温度为约400℃，引线键合工艺的温度为约250℃。即，在涂敷膜26的固化工艺期间，如果将高于约500℃的温度应用于半导体芯片23或粘结剂22时，会由于因应用其上的高温造成的材料退化而产生器件缺陷。另外，如果应用于涂敷膜26的加热温度太低，便无法适当地进行基于材料物理特性的固化工艺。
如上所述，本发明的目有在于，在引线键合工艺后，在半导体芯片、引线框的垫片、连线和粘结剂的表面上喷涂由聚亚酰胺类材料制成的涂敷液，从而形成涂敷膜。另外，涂敷膜用于物理和热缓冲，并吸收因封装中各部件材料间热膨胀的不同造成的应力，这种应力会使层间分离和破裂，从而提高最终半导体芯片的可靠性。
尽管为了说明的目的公开了本发明的优选实施例，但在不脱离所附权利要求所限定的发明的范围和精神实质的情况下，本领域的普通技术人员可以作出各种改型。附加和替换。

Claims (24)

1.一种制造抗裂半导体封装的方法，包括以下步骤：
将半导体芯片贴到引线框的垫片上；
电连接半导体芯片和引线框的内引线；
在半导体芯片和引线的表面上形成涂敷膜；及
将半导体芯片、引线和涂敷膜模制于封装中。
2.根据权利要求1的方法，其特征在于，利用喷涂涂敷液的方法形成所述涂敷膜。
3.根据权利要求1的方法，其特征在于，利用滴涂涂敷液的方法形成所述涂敷膜。
4.根据权利要求1的方法，其特征在于，利用淀积工艺形成所述涂敷膜。
5.根据权利要求1的方法，其特征在于，所述涂敷膜是由聚亚酰胺类材料制成的。
6.根据权利要求2的方法，其特征在于，所述涂敷液的粘度为5-20泊。
7.根据权利要求3的方法，其特征在于，所述涂敷液的粘度为5-20泊。
8.根据权利要求2的方法，其特征在于，在喷涂了涂敷液后，再进行固化工艺。
9.根据权利要求8的方法，其特征在于，所述固化工艺为热固化工艺。
10.根据权利要求9的方法，其特征在于，所述热是由红外线产生的。
11.根据权利要求8的方法，其特征在于，固化工艺的温度在100-500℃范围内。
12.根据权利要求8的方法，其特征在于，所述固化工艺进行5-180秒。
13.根据权利要求1的方法，其特征在于，在贴半导体芯片步骤后，进行形成涂敷膜的工艺。
14.一种抗裂半导体封装，包括：
半导体芯片；
将电信号传送到外部和从外部传入信号的引线；
电连接半导体芯片和引线的导电连线；
至少在半导体芯片和引线上形成的涂敷膜；及
模制半导体芯片、连线和涂敷膜的模制树脂。
15.根据权利要求14的封装，其特征在于，所述涂敷膜由聚亚酰胺类材料制成。
16.根据权利要求14的封装，其特征在于，所述涂敷膜由环氧树脂类材料制成。
17.根据权利要求14的封装，其特征在于，所述涂敷膜由特氟隆类材料制成。
18.根据权利要求14的封装，其特征在于，所述涂敷膜形成于连线的表面上。
19.根据权利要求14的封装，其特征在于，所述涂敷膜厚2-200微米。
20.一种抗裂半导体封装制造设备，包括：
具有存储液态涂敷材料并提供预定压力的压力容器和多个置于压力容器中的喷涂装置的涂敷设备；
用于幅射预定热量的加热装置；
移动所述加热装置的移动装置；及
控制加热装置的操作和移动装置的运动的控制装置。
21.根据权利要求20的设备，其特征在于，所述加热装置包括多个红外线灯和安装红外线灯的灯体。
22.根据权利要求21的设备，其特征在于，所述灯体包括安装灯的灯座和控制灯座运动的导轨。
23.根据权利要求20的设备，其特征在于，所述移动装置包括一端固定于控制装置上的固定轴、和一端插在固定轴中而另一端固定于加热装置的灯体上表面上的移动轴。
24.据权利要求20的设备，其特征在于，所述控制装置包括信号输入单元，用于输入移动轴和灯座的运动命令信号及灯的On/Off操作命令信号。
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