CN107534020B - 粘合膜、半导体器件的制备方法和半导体器件 - Google Patents

粘合膜、半导体器件的制备方法和半导体器件 Download PDF

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CN107534020B
CN107534020B CN201680023097.5A CN201680023097A CN107534020B CN 107534020 B CN107534020 B CN 107534020B CN 201680023097 A CN201680023097 A CN 201680023097A CN 107534020 B CN107534020 B CN 107534020B
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semiconductor device
adhesive film
resin
semiconductor
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CN107534020A (zh
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金丁鹤
金熹正
金塞拉
李光珠
金荣国
南承希
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LG Chem Ltd
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Abstract

本发明涉及在110℃下的触变指数为1.5至7.5的粘合膜，其用于固定第一半导体器件和第二半导体器件，所述第一半导体器件的面积与所述第二半导体器件的面积之比为0.65或更小；使用所述粘合膜来制备半导体器件的方法；以及半导体器件。

Description

粘合膜、半导体器件的制备方法和半导体器件
技术领域
相关申请的交叉引用
本申请要求于2015年9月23日向韩国知识产权局提交的韩国专利申请第10-2015-0134715号的权益，其公开内容通过引用整体并入本文。
本发明涉及粘合膜、用于制备半导体器件的方法和半导体器件。
背景技术
近来，随着电子器件朝小型化、高性能和大容量的趋势日益增加，对高密度、高度集成的半导体封装件的需求迅速增加，并因此半导体芯片的尺寸变得愈来愈大，为了提高集成度，越来越多地使用多级堆叠芯片的堆叠封装方法。
作为堆叠封装方法，已知线接合(wire bonding)法，其中半导体片状器件的电极部分和安装在引线框或杆(stem)上的导体层通过诸如金或铝等的金属线连接；或者倒装芯片法，其中当将半导体芯片附接至电路板时，使用电极图案将其按原样焊接在芯片的下侧，而不使用额外的连接结构如金属引线(线)或中间介质如球栅阵列(BGA)等。
同时，配备半导体控制器件(控制器)以增加半导体装置中信号传输的容易性或者控制半导体器件的操作，如果这样的半导体控制器件未被适当地固定，则可降低半导体封装件的信号传输效率或速度，在多级堆叠封装过程中半导体器件的结构可能变得不稳定，并且可降低半导体装置的制备产率或可靠性。
因此，为了在多级堆叠封装过程中容易地掩埋半导体器件，正在开发各种膜形或液体粘合剂。
发明内容
技术问题
本发明的一个目的是提供一种用于半导体的粘合膜，所述粘合膜可以更容易地掩埋第一半导体器件(其为半导体控制器件)，可以防止掩埋后嵌条(fillet)流出至第二半导体器件的周围以促进线接合，可以使第二半导体器件的弯曲最小化以在第二半导体器件上容易且稳定地构建多级堆叠，以及可以提高最终制备的半导体封装件的信号传输效率和速度。
本发明的另一个目的是提供一种使用用于半导体的粘合膜来制备半导体器件的方法。
本发明的另一个目的是提供一种包括用于半导体的粘合膜的半导体器件。
技术方案
本文中提供了在110℃下的触变指数为1.5至7.5的粘合膜，其用于固定第一半导体器件和第二半导体器件，所述第一半导体器件的面积与所述第二半导体器件的面积之比为0.65或更小。
另外，本文中提供了用于制备半导体器件的方法，所述方法包括使用上述粘合膜固定第一半导体器件和第二半导体器件的步骤，所述第一半导体器件的面积与所述第二半导体器件的面积之比为0.65或更小。
此外，本文中提供了半导体器件，其包括：形成在被粘物上的第一半导体器件；和通过上述粘合膜与所述第一半导体器件接合的第二半导体器件，其中所述第一半导体器件的面积与所述第二半导体器件的面积之比为0.65或更小。
下文中，将更详细地说明根据本发明的具体实施方案的粘合膜、用于制备半导体器件的方法和半导体器件。
根据本发明的一个实施方案，提供了在110℃下的触变指数为1.5至7.5的粘合膜，其用于固定第一半导体器件和第二半导体器件，所述第一半导体器件的面积与所述第二半导体器件的面积之比为0.65或更小。
本发明人发现，如果使用具有特定触变指数的粘合膜固定第一半导体器件和第二半导体器件，所述第一半导体器件的面积与所述第二半导体器件的面积之比为0.65或更小，则可以更容易地掩埋第一半导体器件，并且掩埋后可以使第二半导体器件的弯曲最小化，从而促进在第二半导体器件上构建多级堆叠。因此，本发明人通过实验证实，包括第一半导体器件和第二半导体器件的多级堆叠封装件的结构可以更稳定，从而提高最终制备的半导体封装件的信号传输效率和速度，并且完成本发明。
具体地，如果使用在110℃下的触变指数为1.5至7.5、或3至7、或4至6的用于半导体的粘合膜，则在粘合膜接触第一半导体器件且在第二半导体器件的接合过程中施加剪切力的情况下，粘合膜的流动性增加以更容易且有效地掩埋第一半导体器件，并且在掩埋之后，可防止嵌条流出至第二半导体器件的周围，从而促进线接合同时防止半导体器件的污染。
术语“掩埋”意指这样的情况：其中半导体器件的外表面覆盖或涂覆有粘合膜，并因此基本上不存在暴露在外部的部分。
通过使用粘合膜，在掩埋或固定第一半导体器件和第二半导体器件的过程中，可以更容易地掩埋第一半导体器件，并且在掩埋之后，可以防止嵌条流出至半导体器件的周围，从而促进线接合同时防止半导体器件的污染，并且在掩埋后，可以使第二半导体器件的弯曲最小化，从而促进在第二半导体器件上构建多级堆叠。因此，包括第一半导体器件和第二半导体器件的多级堆叠封装件的结构可更稳定，从而提高最终制备的半导体封装件的信号传输效率和速度，并且多级堆叠封装件可变得更小型化和紧凑。
触变指数是粘合膜在0.5rad/s的剪切速率和110℃的温度下的熔体粘度与所述粘合膜在5rad/s的剪切速率和110℃的温度下的熔体粘度之比。
如上所述，粘合膜在110℃下的触变指数为1.5至7.5、或3至7。如果粘合膜在110℃下的触变指数小于1.5，则在使用实施方案的粘合膜固定第二半导体器件时，粘合膜可流动，并因此周围环境可受到污染而致使线接合困难，并且可显著降低半导体器件制备的可靠性。另外，如果粘合膜在110℃下的触变指数大于7.5，则在使用实施方案的粘合膜进行管芯接合(die bonding)时，初始粘度可显著增加，并因此可能难以掩埋第一半导体器件，并且在管芯接合之后，可产生第二半导体器件的弯曲。
粘合膜的触变指数可通过以下方法来控制：调整或改变粘合膜中包含的主要组分的方法；控制粘合膜的主要组分和可以选择性地包含的无机填料的含量的方法；在制备粘合膜时添加流变改性剂的方法，等。
同时，粘合膜在110℃的温度和5rad/s的剪切速率下的熔体粘度可为500Pa·s至10000Pa·s。如果粘合膜在高温下的熔体粘度太低，则在使用所述粘合膜管芯接合第一半导体器件和第二半导体器件的过程中，粘合剂可流出至半导体器件的边缘(嵌条形成)。而如果粘合膜在高温下的熔体粘度太高，则可降低流动性，并且可能变得难以固定或掩埋第一半导体器件和第二半导体器件，或者第二半导体器件的弯曲可变得严重，并因此额外的多级堆叠可能变得困难。
如上所述，粘合膜可用于固定第一半导体器件和第二半导体器件，其中所述第一半导体器件的面积与所述第二半导体器件的面积之比为0.65或更小、或者0.1至0.65。
如果所述第一半导体器件的面积与所述第二半导体器件的面积之比大于0.65，则由于掩埋的面积可增加，以及可以填充掩埋的第一半导体器件的边缘部分的粘合层的绝对量不足，故可能变得难以使用粘合膜掩埋第一半导体器件，并且可以在内部捕获的空隙的量可增加。
第一半导体器件和第二半导体器件可分别具有10μm至500μm的厚度。
粘合膜的厚度可为1μm至200μm、或10μm至180μm。如果粘合膜的厚度变得太薄，则其可能不足以用于模制器件，或者可能难以充分确保机械特性。而如果第二粘合膜的厚度太厚，则在固定第一半导体器件和第二半导体器件的过程或其他半导体制备过程中，可能难以处理或者效率可能降低。
粘合膜可包含玻璃化转变温度为-10℃至30℃的热塑性树脂、环氧树脂和含有酚树脂的固化剂。
尽管热塑性树脂的实例没有限制，但是可提及例如聚酰亚胺、聚醚酰亚胺、聚酯酰亚胺、聚酰胺、聚醚砜、聚醚酮、聚烯烃、聚氯乙烯、苯氧基树脂、反应性丁二烯丙烯腈共聚物橡胶、基于(甲基)丙烯酸酯的树脂、其两种或更多种的混合物、或者其两种或更多种的共聚物。
热塑性树脂可包括基于(甲基)丙烯酸酯的树脂，所述基于(甲基)丙烯酸酯的树脂包含含有基于环氧的官能团的基于(甲基)丙烯酸酯的重复单元。
具体地，基于(甲基)丙烯酸酯的树脂可为包含含有基于环氧的官能团的基于(甲基)丙烯酸酯的重复单元且玻璃化转变温度为-10℃至30℃的基于(甲基)丙烯酸酯的树脂。
基于(甲基)丙烯酸酯的树脂可包含0.1重量％至25重量％的含有基于环氧的官能团的基于(甲基)丙烯酸酯的重复单元。环氧树脂可包括固体环氧树脂和液体环氧树脂。
环氧树脂的平均环氧当量重量可为100至1000。
同时，就实现粘合膜的上述特性而言，更优选一起使用固体环氧树脂和液体环氧树脂作为环氧树脂。
通过一起使用固体环氧树脂和液体环氧树脂，可容易地控制粘合膜的固化程度，从而提高粘合性能，并且可将粘合层在110℃下的触变指数控制为1.5至7.5。
另外，通过一起使用固体环氧树脂和液体环氧树脂，粘合膜可具有适当的流动性，并且例如，粘合膜在110℃的温度和5rad/s的剪切速率下的熔体粘度可为500Pa·s至10000Pa·s。
液体环氧树脂可与玻璃化转变温度为-10℃至30℃的热塑性树脂和包含酚树脂的固化剂一起形成粘合组分的基材(或基质)，并且其向粘合膜提供对于半导体优化的优异的粘合和流动特性同时具有相对低的粘度，并且还提供高断裂强度和低断裂伸长率。
酚树脂的软化点可为50℃或更高、或60℃至160℃。
如上所述，通过使用软化点为50℃或更高的酚树脂，其可与液体环氧树脂和玻璃化转变温度为-10℃至30℃的热塑性树脂一起形成粘合组分的基材(或基质)，并且其可向粘合膜提供在室温下更高的拉伸模量和优异的粘合性以及对于半导体优化的流动特性。
尽管液体环氧树脂的具体种类和性质没有明显限制，但是例如，液体环氧树脂在25℃下的粘度可为500mPa·s至20000mPa·s。液体环氧树脂的环氧当量重量可为100至1000。
特别地，在粘合膜中，液体环氧树脂与酚树脂的重量比可为0.3至1.5。
如果液体环氧树脂与酚树脂的重量比太高，则粘合膜的熔体粘度可降低，从而在室温下具有粘性，并且在室温下的拉伸模量可降低且在室温下的伸长率可大大提高，因而在晶片切割时产生粘合膜的再粘合。如果液体环氧树脂与酚树脂的重量比太低，则在室温下伸长时产生的模量可变得太高，或者在室温下的伸长率可大大降低，从而显著降低最终产品的制备产率，并且粘合膜对晶片可能不具有足够的粘附力，从而在制备过程中在晶片与粘合膜之间产生脱粘。
环氧树脂可包括选自以下的一种或更多种：基于联苯的环氧树脂、双酚A环氧树脂、双酚F环氧树脂、甲酚酚醛清漆环氧树脂、苯酚酚醛清漆环氧树脂、四官能环氧树脂、三苯基甲烷型环氧树脂、经烷基改性的三苯基甲烷型环氧树脂、萘型环氧树脂、二环戊二烯型环氧树脂、和经二环戊二烯改性的酚型环氧树脂。
固化剂还可包括选自基于胺的固化剂和酸酐固化剂的一种或更多种化合物。
用于半导体粘合的树脂组合物还可包含固化催化剂。
固化催化剂执行固化剂的功能或者用于促进用于半导体粘合的树脂组合物的固化的功能，并且可使用已知待用于制备半导体粘合膜的固化催化剂等而没有特别限制。例如，作为固化催化剂，可使用选自以下的一者或更多者：基于磷的化合物、基于硼的化合物、基于磷-硼的化合物和基于咪唑的化合物。
如上所述，粘合膜的触变指数还可通过在制备粘合膜时添加流变改性剂来控制。通过使用流变改性剂，当不施加剪切力时，即使未形成化学键，也可形成网状结构以保持形状，并且当施加剪切力时，网状结构可坍塌。因此，在管芯接合之前或之后不施加剪切力的情况下，粘合膜可保持形状而不流动，并且在管芯接合时向粘合剂树脂施加剪切力的情况下，流动性可增加以提供有利于掩埋的特性和性能。
具体地，粘合膜还可包含选自无机填料和流变改性剂的一者或更多者。
可以包含在粘合膜中的无机填料的种类没有特别限制，并且可使用常见的有机填料或无机填料，并且优选地，可使用无机填料。作为无机填料的具体实例，可使用直径为100nm或更大的二氧化硅(例如，直径为100nm或更大的沉淀二氧化硅)、氧化铝、硫酸钡等，并且还可使用可以吸附离子杂质以提高可靠性的离子吸附剂作为无机填料。这样的离子吸附剂没有特别限制，并且可使用基于镁的离子吸附剂，例如氢氧化镁、碳酸镁、硅酸镁和氧化镁；基于钙的离子吸附剂，例如硅酸钙、碳酸钙和氧化钙；基于铝的离子吸附剂，例如氧化铝、氢氧化铝、氮化铝和硼酸铝晶须；基于锆的离子吸附剂；以及基于锑和铋的离子吸附剂，并且其两种或更多种可组合使用。
作为可以包含在粘合膜中的流变改进剂，可使用相关技术领域中已知的组分，并且例如，可使用合成粉末二氧化硅类的化合物，例如直径小于100nm的二氧化硅(例如，直径小于100nm的气相二氧化硅(fumed silica))、基于膨润土的化合物、可微沉降的碳酸钙、基于有机膨润土的化合物、经表面处理的碳酸钙化合物、基于金属皂的化合物、氢化蓖麻油、聚酰胺蜡、聚环氧乙烷化合物、植物油、聚合油、聚合亚麻籽油、脂肪酸二聚物、或者其两种或更多种的混合物。
这样的流变改性剂的更具体的实例可包括来自Boston,Massachusetts,USA的Cabot Corp.的商品名“CAB-O-SIL”，或者来自德国Essen的Evonik Industries的商品名“AEROSIL”等。
如果粘合膜包含无机填料，则考虑到粘合膜的触变指数、流动性和可掩埋性，其可包含最佳含量的无机填料，并且例如，粘合膜可包含10重量％至50重量％的无机填料。然而，如果粘合膜中无机填料的含量过大，则粘合膜在室温下可能容易破裂，并且在晶片层合时对晶片的粘合特性可降低。
此外，如果粘合膜包含流变改性剂，则考虑到粘合膜的触变指数、流动性和可掩埋性，其可包含最佳含量的流变改性剂，并且例如，粘合膜可包含0.1重量％至15重量％的流变改性剂。然而，如果粘合膜中流变改进剂的含量过大，则在制备涂覆溶液时可产生微分散状态，并且粘合膜的粘度可迅速增加而大大降低可掩埋性。
如果粘合膜同时包含无机填料和流变改性剂，则粘合膜中无机填料和流变改性剂的重量之和可为5重量％至50重量％。
同时，根据本发明的另一个实施方案，提供了用于制备半导体器件的方法，所述方法包括使用上述粘合膜固定第一半导体器件和第二半导体器件的步骤，所述第一半导体器件的面积与所述第二半导体器件的面积之比为0.65或更小。
固定可通过以下步骤进行：在50℃至200℃的温度下施加0.01MPa至1.0MPa的压力，同时在第一半导体器件与第二半导体器件之间设置粘合膜。
同时，制备半导体器件的方法还可包括通过线接合或倒装芯片法将第一半导体器件固定在被粘物上的步骤。
通过线接合或倒装芯片法将第一半导体器件固定在被粘物上的步骤的细节如下。
用于接合第一半导体器件的材料可包括基底或引线框、其他半导体器件等。作为基底，可使用先前已知的基底，例如印刷电路板等。作为引线框，可使用金属引线框，例如Cu引线框、42合金引线框等，或者包含玻璃环氧树脂、BT(双马来酰亚胺-三嗪)、聚酰亚胺等的有机基底。然而，用于接合第一半导体器件的材料不限于此，并且可使用可以通过在其上安装半导体器件以与所述半导体器件电连接来使用的任何电路板而没有特别限制。
作为第一粘合膜，可使用厚度为5μm至50μm的现有的管芯接合膜。首先，将第一粘合膜附接至第一半导体器件上，其管芯接合到被粘物上。其后，在预定条件下加热处于半固化状态的第一粘合膜，从而使第一粘合膜热固化并将第一半导体器件固定在被粘物上。热处理优选在50℃至200℃的温度和0.01Mpa至1.0MPa的压力下进行，并且更优选在90℃至180℃的温度和0.1Mpa至0.8MPa的压力下进行。热处理优选进行0.1小时至10小时，并且更优选0.5小时至7小时。
第一线接合过程是通过接合线使被粘物的末端部分的前端与第一半导体器件上的电极焊盘电连接的过程。作为接合线，例如，使用金线、铝线、铜线等。线接合的温度可为70℃至240℃，优选80℃至220℃。加热进行数秒至数分钟。通过组合使用由超声波产生的振动能量和由施加的压力产生的压力能量，同时加热至上述温度范围来连接接线。
作为掩埋第一半导体器件的过程，将第二粘合膜(其为用于掩埋的粘合膜)附接至第二半导体器件，并管芯接合到第一半导体器件上。在该过程中，第二粘合膜模制第一半导体器件，并且同时与第一半导体器件的主平面部分处的被粘物接触。第二粘合膜的厚度适当地为1μm至200μm，并且更优选10μm至180μm。如果第二粘合膜的厚度太薄，则其可能不足以用于模制器件，或者可能难以充分确保机械特性。此外，如果第二粘合膜的厚度太厚，则在固定第一半导体器件和第二半导体器件的过程中可能难以处理，或者效率可能降低。
热处理优选在50℃至200℃的温度和0.01MPa至1.0MPa的压力下进行，并且更优选在90℃至180℃的温度和0.1MPa至0.8MPa的压力下进行。热处理优选进行0.1小时至10小时，并且更优选0.5小时至7小时。
第二线接合过程是通过接合线使被粘物的末端部分的前端与第二半导体器件上的电极焊盘电连接的过程。作为接合线，例如，使用金线、铝线、铜线等。线接合的温度可为70℃至240℃，优选80℃至220℃。加热进行数秒至数分钟。通过组合使用由超声波产生的振动能量和由施加的压力产生的压力能量，同时加热至上述温度范围来连接接线。
在第三固定过程中，将与第二半导体器件相同或不同的第三半导体器件固定在第二半导体器件上。将第三粘合膜附接至第三半导体器件上，其管芯接合到第二半导体器件上，从而将其固定。作为第三粘合膜，可适当地使用与第一固定过程中的第一粘合膜相同的粘合膜。由于不需要第三粘合膜来掩埋其他半导体器件，故其可以以约3μm至60μm的薄厚度使用。其后，可通过制造封装件的常见方法来进行堆叠，由此根据需要堆叠许多层和线接合。在堆叠期望数量的半导体器件之后，可进行用于树脂密封整个半导体器件的密封过程。
密封过程是用密封树脂密封半导体器件的过程。进行这样的密封过程以保护安装在被粘物上的半导体器件或接合线，并且例如，其通过用模具模制密封树脂来进行。作为密封树脂，例如，使用基于环氧的树脂。在树脂密封时，例如，加热通常在175℃下进行60秒至90秒，但是固化可在165℃至185℃下进行数分钟。在该过程中，可在树脂密封时进行加压。在这种情况下，用于加压的压力优选为1MPa至15MPa，更优选3MPa至10MPa。
在密封过程之后，可进行用于使密封树脂后固化的后固化过程。在密封过程中，未充分固化的密封树脂可完全固化。尽管密封过程中的加热温度根据密封树脂的种类而不同，但是例如，其在165℃至185℃的范围内，并且加热时间为约0.5小时至8小时。通过经过密封过程或后固化过程，可制造半导体封装件。
可通过应用倒装芯片来制备半导体器件作为另一第一半导体器件，所述制备通过相同的方法进行，不同之处在于用于线接合的第一半导体器件的固定过程。在应用倒装芯片的情况下，第一半导体器件通过倒装芯片连接被固定在被粘物上，并且是所谓的面朝下安装，其中第一半导体器件的电路侧与被粘物相对。在第一半导体器件中，安装有多个突出电极，例如凸块等，并且突出电极与被粘物上的电极连接。在被粘物与第一半导体器件之间填充底部填充材料。
连接方法没有特别限制，并且先前已知的倒装芯片接合器可用于连接。例如，当使形成在第一半导体器件上的突出电极(例如，凸块等)与用于粘附到被粘物的连接焊盘上的接合点的导电材料(焊料)接触并加压时，导电材料熔化，从而确保第一半导体器件和被粘物的电连接，从而将第一半导体器件固定在被粘物上(倒装芯片接合)。通常，在倒装芯片连接时，加热条件为240℃至300℃，加压条件为0.5N至490N。
用于形成作为突出电极的凸块的材料没有特别限制，并且例如，可使用焊料(合金)，例如基于锡-铅的金属材料、基于锡-银的金属材料、基于锡-银-铜的金属材料、基于锡-锌的金属材料、基于锡-锌-铋的金属材料等，或者基于金的金属材料、基于铜的金属材料等。作为底部填充材料，可使用先前已知的液体或膜形底部填充材料。
作为掩埋第一半导体器件的方法，将第二粘合膜(其为用于掩埋的粘合膜)附接至第二半导体器件，并且管芯接合到第一半导体器件上。在该过程中，第二粘合膜模制第一半导体器件，并且同时与第一半导体器件的主平面部分处的被粘物接触。由于第一半导体器件是倒装芯片器件并且不具有接合线，故模制所需的第二粘合膜的厚度可变小，并因此第二粘合膜的厚度适当地为1μm至200μm，并且更优选10μm至180μm。如果第二粘合膜的厚度较小，则其可能不足以用于模制器件，而如果其太厚，则可加工性可劣化。在堆叠第二半导体器件之后，进行热处理以固定第二半导体器件，以便不在随后的线接合中移动。
热处理优选在50℃至200℃的温度和0.01Mpa至1.0MPa的压力下进行，并且更优选在90℃至180℃的温度和0.1MPa至0.8MPa的压力下进行。热处理优选进行0.1小时至10小时，并且更优选0.5小时至7小时。
第二线接合过程是通过接合线使被粘物的末端部分的前端与第二半导体器件上的电极焊盘电连接的过程。作为接合线，例如，使用金线、铝线、铜线等。线接合的温度可为70℃至240℃，并且优选80℃至220℃。加热进行数秒至数分钟。通过组合使用由超声波产生的振动能量和由施加的压力产生的压力能量，同时加热至上述温度范围来连接接线。
同时，在第三固定过程中，将与第二半导体器件相同或不同的第三半导体器件固定在第二半导体器件上。将第三粘合膜附接至管芯接合到第二半导体器件上的第三半导体器件上，从而将其固定。作为第三粘合膜，可适当地使用与第一固定过程中的第一粘合膜相同的粘合膜。由于不需要第三粘合膜来掩埋其他半导体器件，因此其可以以约3μm至60μm的薄厚度使用。其后，可通过制造封装件的常见方法来进行堆叠，由此根据需要堆叠许多层和线接合。在堆叠期望数量的半导体器件之后，可进行用于树脂密封整个半导体器件的密封过程。
密封过程是用密封树脂密封半导体器件的过程，并且进行这样的过程以保护安装在被粘物上的半导体器件或接合线。例如，密封过程通过用模具模制密封树脂来进行。作为密封树脂，例如，使用基于环氧的树脂。在树脂密封时，例如，加热通常在175℃下进行60秒至90秒，但是固化可在165℃至185℃下进行数分钟。
在密封过程中，可在树脂密封时进行加压。在这种情况下，用于加压的压力优选为1MPa至15MPa，并且更优选3MPa至10MPa。
在密封过程之后，可进行用于使密封树脂后固化的后固化过程。在后固化过程中，在密封过程中未充分固化的密封树脂完全固化。尽管后固化过程中的加热温度根据密封树脂的种类而不同，但是例如，其在165℃至185℃的范围内，并且加热时间为约0.5小时至8小时。通过经历密封过程或后固化过程，可制造半导体封装件。
根据本发明的又一个实施方案，提供了一种半导体器件，其包括形成在被粘物上的第一半导体器件和通过上述粘合膜与所述第一半导体器件接合的第二半导体器件，其中所述第一半导体器件的面积与第二半导体器件的面积之比为0.65或更小。
粘合膜可掩埋第一半导体器件。
可通过线接合或倒装芯片法将第一半导体器件与被粘物结合。
有益效果
根据本发明，提供了用于半导体的粘合膜，所述粘合膜可以更容易地掩埋第一半导体器件(其为半导体控制器件)，可以防止掩埋后嵌条流出至第二半导体器件的周围以促进线接合，可以使第二半导体器件的弯曲最小化以在第二半导体器件上容易且稳定地构建多级堆叠，并且可以提高最终制备的半导体封装件的信号传输效率和速度；使用所述用于半导体的粘合膜来制备半导体的方法；以及包括所述用于半导体的粘合膜的半导体器件。
通过使用用于半导体的粘合膜，在多级堆叠半导体封装件中可以更容易地掩埋半导体控制器件，可以提高最终制备的半导体封装件的信号传输效率和速度，以及可以更稳定地保持包括第一半导体器件和第二半导体器件的多级堆叠封装件的结构。
具体实施方式
将通过以下实施例更详细地说明本发明的实施方案。然而，提供这些实施例仅用于说明本发明，而不应当解释为限制本发明。
[制备例：热塑性丙烯酸酯树脂的制备]
将100g甲苯与40g丙烯酸丁酯、60g丙烯酸乙酯、15g丙烯腈和10g甲基丙烯酸缩水甘油酯混合，并使混合物在80℃下反应约12小时以合成引入缩水甘油基作为支链的基于丙烯酸酯的树脂(重均分子量为约700000，玻璃化转变温度为10℃)。
[实施例1至5和比较例1至3：用于半导体的粘合剂树脂组合物和用于半导体的粘合膜的制备]
实施例1
(1)用于半导体的粘合剂树脂组合物的溶液的制备
将以下物质在甲基乙基酮溶剂中混合以获得用于半导体的粘合剂组合物的溶液(固含量40重量％)：50g酚树脂KH-6021(由DIC公司生产，双酚A酚醛清漆树脂，羟基当量重量121g/eq，软化点：133℃)(其为环氧树脂的固化剂)、38g环氧树脂EOCN-104S(由NipponKayaku Co.,Ltd.生产，甲酚酚醛清漆型环氧树脂，环氧当量重量214g/eq，软化点：92℃)、50g液体环氧树脂RE-310S(由Nippon Kayaku Co.,Ltd.生产，双酚A环氧树脂，环氧当量重量180g/eq)、40g制备例1中获得的热塑性丙烯酸酯树脂、5g硅烷偶联剂A-187(GE Toshiba硅氧烷，γ-环氧丙氧基丙基三甲氧基硅烷)、0.1g固化促进剂2PZ(Shikoku Chemicals公司，2-苯基咪唑)、和100g填料SC-2050(Admatec公司，球形二氧化硅，平均颗粒直径约400nm)。
(2)用于半导体的粘合膜的制备
将以上制备的用于半导体的粘合剂组合物的溶液涂覆在经剥离处理的聚对苯二甲酸乙二醇酯膜(厚度38μm)上，然后在110℃下干燥3分钟以获得厚度为约110μm的用于半导体的粘合膜。
(3)半导体器件的制备
制造厚度为20μm的具有实施例1的组合物的粘合膜，并将其用作第一半导体器件的粘合膜。在70℃的条件下，将其附接至厚度为50μm且一侧长度为4mm的四方形第一半导体器件。将粘合膜所附接的第一半导体器件粘附到BGA基底上。此时，条件为125℃的温度和1kg的压力持续1秒。用干燥器将第一半导体器件所附接的BGA基底加热至125℃持续1小时，从而使粘合膜热固化。随后，使用线接合器(Shinkawa Co.,Ltd.，产品名“UTC-1000”)，在150℃的条件下以100μm间距进行当前的23μm线与控制器芯片的线接合。
随后，在温度为70℃的条件下，将实施例和比较例中制造的各粘合膜附接至一侧长度为8.8mm且厚度为80μm的四方形半导体芯片。将粘合膜所附接的第二半导体器件附接至第一半导体器件和BGA基底，从而掩埋所述第一半导体器件。此时，条件为110℃的温度和2kg的压力持续1秒。
实施例2至5
通过与实施例1相同的方法获得用于半导体的粘合剂树脂组合物的溶液(固含量40重量％)和厚度为110μm的用于半导体的粘合膜，不同之处在于应用下表1中描述的组分和量。
比较例1和2
通过与实施例1相同的方法获得用于半导体的粘合剂树脂组合物的溶液(固含量40重量％)和厚度为110μm的用于半导体的粘合膜，不同之处在于应用下表1中描述的组分和量。
比较例3
应用实施例1的组分和量，通过与实施例1相同的方法获得用于半导体的粘合剂树脂组合物的溶液(固含量40重量％)和厚度为110μm的用于半导体的粘合膜，不同之处在于使用一侧长度为7.5mm且厚度为50μm的四方形第一半导体器件。
[表1]实施例和比较例的树脂组合物的组成[单位：g]
Figure BDA0001439899510000141
R-972(Evonik Industries，气相二氧化硅，平均颗粒直径17nm)
KPH-F3075(Kolon Chemical Co.,Ltd.，羟基当量重量：175g/eq，软化点：75℃)
GPH-65(Nippon Kayaku Co.,Ltd.，羟基当量重量198g/eq，软化点：65℃)
[实验例：用于半导体的粘合膜的特性的评估]
实验例1：熔体粘度的测量
将分别在实施例和比较例中获得的粘合膜堆叠至660μm的厚度，然后使用辊式层合机在60℃下进行层合。其后，各样品形成为直径为8mm的圆形，然后使用TA公司的高级流变扩展系统(advanced rheometric expansion system，ARES)在5rad/s的剪切速率和20℃/分钟的温度上升速率下测量根据温度的熔体粘度。
实验例2：第二粘合层的第一半导体器件模制特性的测量
如半导体器件的制备例中描述的，在135℃、1小时和7atm的条件下用压力干燥器加热第二半导体器件所附接的BGA基底以使粘合膜热固化，从而制备半导体器件。切割所制造的半导体器件，用光学显微镜(200X放大倍数)观察切割侧，如果第一半导体器件被很好地掩埋而其周围没有空隙，则将其解释和评估为“○”；而如果在第一半导体器件周围观察到任何空隙，则将其解释和评估为“×”。
实验例3：接合线模制特性的测量
在如实验例2中所述制造半导体器件之后，使用X射线检查设备确定接合线是否损坏。如果半导体器件内的接合线以规则间隔间隔开，则将其解释和评估为良好“○”；而如果存在任何接合线彼此重叠而产生短路，则将其解释和评估为有缺陷“×”。
实验例4：嵌条量的测量
在如实验例2中所述制造半导体器件之后，测量流出至第二半导体器件周围的粘合剂的量，测量每个器件的最大流出长度，如果长度在200μm内，则将其解释和评估为良好“○”；而如果长度超过200μm，则将其解释和评估为有缺陷“×”。
[表2]实验例的结果
Figure BDA0001439899510000151
如表2所示，可以证实，在使用于110℃下的触变指数为1.5至7.5的用于实施例1至5的半导体器件的粘合膜固定第一半导体器件和第二半导体器件(第一半导体器件的面积与第二半导体器件的面积之比为0.65或更小)的情况下，可以更容易地掩埋为半导体控制器件的第一半导体器件，并且在掩埋之后，可以使第二半导体器件的弯曲最小化，从而促进在第二半导体器件上构建多级堆叠。
在使用实施例1至5的用于半导体器件的粘合膜的情况下，可以防止粘合剂在固化温度下在第二半导体芯片中流动或者粘合剂流出至半导体器件的周围和形成嵌条。
相反地，在于110℃下的触变指数大于7.5的比较例1的粘合膜中，掩埋第一半导体器件的性能低且接合线彼此重叠而产生短路，在于110℃下的触变指数小于1.5的比较例2的粘合膜中，粘合剂过度流出至第二半导体器件的周围而形成嵌条。
在其中第一半导体器件的面积与第二半导体器件的面积之比大于0.65的比较例3的半导体器件的制备过程中，在掩埋第一半导体器件的过程期间，产生空隙，或者粘合剂过度流出至第二半导体器件的周围而形成嵌条。

Claims (19)

1.一种粘合膜，其在110℃下的触变指数为1.5至7.5，其用于固定第一半导体器件和第二半导体器件，所述第一半导体器件的面积与所述第二半导体器件的面积之比为0.65或更小，
其中所述粘合膜包含：玻璃化转变温度为-10℃至30℃的热塑性树脂；环氧树脂；和含有酚树脂的固化剂，
其中所述触变指数是所述粘合膜在0.5rad/s的剪切速率和110℃的温度下的熔体粘度与所述粘合膜在5rad/s的剪切速率和110℃的温度下的熔体粘度之比。
2.根据权利要求1所述的粘合膜，其中所述粘合膜在110℃下的触变指数为3至7。
3.根据权利要求1所述的粘合膜，其中所述粘合膜在5rad/s的剪切速率和110℃的温度下的熔体粘度为500Pa·s至10000Pa·s。
4.根据权利要求1所述的粘合膜，其中所述粘合膜的厚度为1μm至200μm。
5.根据权利要求1所述的粘合膜，其中所述热塑性树脂包括基于(甲基)丙烯酸酯的树脂，所述基于(甲基)丙烯酸酯的树脂包含含有基于环氧的官能团的基于(甲基)丙烯酸酯的重复单元。
6.根据权利要求5所述的粘合膜，其中所述基于(甲基)丙烯酸酯的树脂包含0.1重量％至25重量％的所述含有基于环氧的官能团的基于(甲基)丙烯酸酯的重复单元。
7.根据权利要求1所述的粘合膜，其中所述环氧树脂包括固体环氧树脂和液体环氧树脂。
8.根据权利要求7所述的粘合膜，其中所述液体环氧树脂在25℃下的粘度为500mPa·s至20000mPa·s。
9.根据权利要求7所述的粘合膜，其中所述液体环氧树脂与所述酚树脂的重量比为0.3至1.5。
10.根据权利要求1所述的粘合膜，其中所述酚树脂的软化点为50℃或更高。
11.根据权利要求1所述的粘合膜，其中所述粘合膜还包含选自无机填料和流变改性剂中的一者或更多者。
12.根据权利要求11所述的粘合膜，其中所述流变改性剂包括选自以下的一种或更多种化合物：直径小于100nm的二氧化硅、基于膨润土的化合物、可微沉降的碳酸钙、基于有机膨润土的化合物、经表面处理的碳酸钙化合物、基于金属皂的化合物、氢化蓖麻油、聚酰胺蜡、聚环氧乙烷化合物、植物油、聚合油、聚合亚麻籽油和脂肪酸二聚物。
13.根据权利要求11所述的粘合膜，其中所述无机填料包括选自以下的一种或更多种化合物：直径为100nm或更大的二氧化硅、氧化铝、硫酸钡、氢氧化镁、碳酸镁、硅酸镁、氧化镁、硅酸钙、碳酸钙、氧化钙、氧化铝、氢氧化铝、氮化铝、硼酸铝晶须、基于锆的化合物、以及基于锑和铋的化合物。
14.根据权利要求11所述的粘合膜，其中所述粘合膜包含10重量％至50重量％的所述无机填料或者0.1重量％至15重量％的所述流变改性剂。
15.一种用于制备半导体器件的方法，包括使用根据权利要求1至14中任一项所述的粘合膜固定第一半导体器件和第二半导体器件的步骤，所述第一半导体器件的面积与所述第二半导体器件的面积之比为0.65或更小。
16.根据权利要求15所述的用于制备半导体器件的方法，其中固定所述第一半导体器件和所述第二半导体器件通过以下步骤进行：在将所述粘合膜设置在所述第一半导体器件与所述第二半导体器件之间时，在50℃至200℃的温度下施加0.01MPa至1.0MPa的压力。
17.根据权利要求15所述的用于制备半导体器件的方法，还包括通过线接合或倒装芯片法将所述半导体器件固定在被粘物上的步骤。
18.一种半导体器件，包括：
形成在被粘物上的第一半导体器件；和
通过根据权利要求1所述的粘合膜与所述第一半导体器件接合的第二半导体器件，
其中所述第一半导体器件的面积与所述第二半导体器件的面积之比为0.65或更小。
19.根据权利要求18所述的半导体器件，
其中所述粘合膜掩埋所述第一半导体器件，并且
所述第一半导体器件通过线接合或倒装芯片法与被粘物接合。
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