WO2017171492A1 - 반도체 장치 및 반도체 장치의 제조 방법 - Google Patents
반도체 장치 및 반도체 장치의 제조 방법 Download PDFInfo
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- WO2017171492A1 WO2017171492A1 PCT/KR2017/003578 KR2017003578W WO2017171492A1 WO 2017171492 A1 WO2017171492 A1 WO 2017171492A1 KR 2017003578 W KR2017003578 W KR 2017003578W WO 2017171492 A1 WO2017171492 A1 WO 2017171492A1
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- WIPO (PCT)
- Prior art keywords
- semiconductor device
- semiconductor element
- semiconductor
- adhesive layer
- adhesive
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device, and more particularly, to omit the underfill process, thereby greatly improving the efficiency of the semiconductor manufacturing process, and having a structure capable of improving signal transmission efficiency and transmission speed. It relates to a semiconductor device and a method for manufacturing the semiconductor device and the semiconductor device described above.
- Such a stack package method includes a wire bonding method for connecting a semiconductor wafer between a electrode portion of a semiconductor pellet and a conductor layer provided on a lead prem or a stem with a metal wire such as thin gold or aluminum, or a metal lead when attaching a semiconductor wafer to a circuit board.
- a flip chip method is known in which an additional connection structure such as a wire) or an intermediate pattern such as a ball grid array (BGA) is used to be fused as it is using an electrode pattern on the bottom of the chip.
- a control semiconductor device (controller) is provided.
- the speed may decrease, and the structure of the semiconductor device may become unstable during the multi-stage stack package process.
- the manufacturing yield or reliability of the semiconductor device may be reduced.
- the IC mounting method is a direct IC called surface mounting.
- substrate and packaging using a liquid resin is mainly used (Under-Fill process).
- This underfill process is a method for solving the thermal mechanical fatigue problem.
- the inorganic particles are laminated to a polymer material having excellent adhesion such as epoxy resin to have a value close to the thermal expansion coefficient of the solder, and then the chip and the printed circuit. It refers to a process of filling in the gaps between the substrates, and the polymer composite material in which the inorganic particles are used is called an under-fill.
- underfill material is in liquid form, there is a problem that the underfill with high fluidity protrudes from an undesired portion, causing unnecessary contamination or product defects, or making high density mounting difficult.
- a method of forming a dam called a dam around the device is used.
- the present invention is to provide a semiconductor device having a structure that can significantly improve the efficiency of the semiconductor manufacturing process by omitting the underfill process, and can improve the signal transmission efficiency and transmission speed.
- the present invention is to provide a method for manufacturing a semiconductor device having a structure capable of greatly improving the efficiency of the semiconductor manufacturing process by omitting the underfill process, and can improve the signal transmission efficiency and transmission speed.
- a U-semiconductor element fixed by flip chip connection on an adherend; An adhesive layer filling the space between the adherend and the first semiconductor element and the first semiconductor element; And a second semiconductor element coupled to the first semiconductor element via the adhesive layer.
- the adhesive layer has a melt viscosity of 10 to 10,000 Pa ⁇ s at a temperature of 1 TC and a shear rate of 5 rad / s,
- the thixotropic index is defined as the ratio of melt viscosity of said adhesive layer at 5 rad / s shear rate and 110 ° C shear rate and a temperature of 110 ° C of the adhesive layer to 0.5 rad / s to the melt viscosity at a temperature of A semiconductor device, which is 1.5 to 7.5, is provided.
- the adhesive for semiconductors has a melt viscosity of 10 to 10,000 Pa ⁇ s at a temperature of 110 ° C and a shear rate of 5 rad / s,
- the thixotropic index is defined as the ratio of melt viscosity of the adhesive at a shear rate and 110 ° C temperature of 0.5 rad / s to the melt viscosity of the adhesive in the silver is a 5 rad / s shear rate and 110 ° C of
- a method of manufacturing a semiconductor device which is 1.5 to 7.5.
- a semiconductor device is fixed by flip chip connection on the adherend; An adhesive layer filling the space between the adherend and the first semiconductor element and the first semiconductor element; And a second semiconductor device coupled to the low U semiconductor device via the adhesive layer, wherein the adhesive layer is 10 to 10,000 Pa at a temperature of 11 CTC and a shear rate of 5 rad / s.
- melt viscosity of the adhesive layer has a s melt viscosity, the melt viscosity of the adhesive layer at 5 rad / s shear rate and 110 ° 0.5 rad to the melt viscosity of the adhesive layer at a temperature of C / s shear rate and 110 ° C temperature of the A semiconductor device having a thixotropy index defined by a ratio of 1.5 to 7.5 can be provided.
- the inventors have found that the space between the adherend and the first semiconductor element fixed by the flip chip connection using an adhesive worm having a specific melt viscosity and the Through the method of embedding the semiconductors together, the underfill process can be omitted and a semiconductor device having a structure which can improve the efficiency of the semiconductor manufacturing process can be greatly improved and the signal transmission efficiency and the transmission speed can be improved and completed the invention. It was.
- a melt viscosity of 10,000 Pa's, or 40 to 5,000 Pa A melt viscosity of 10,000 Pa's, or 40 to 5,000 Pa.
- the adhesive layer satisfies the above-described physical properties, only the above-described adhesive layer is used without embedding the space between the adherend fixed by the flip chip connection and the first semiconductor element and the embedding of the second semiconductor element. Landfill is possible. Accordingly, the space between the adherend and the first semiconductor element and the adhesive layer filling the first semiconductor element may be continuous.
- the 'continuous phase' means that the space between the adherend and the first semiconductor element and the first semiconductor element are simultaneously or sequentially buried through the same material and thus are not distinguished as separate layers in the final product.
- the components forming the adhesive layer may be used together to fill the space between the adherend and the first semiconductor element and the first semiconductor element.
- the adhesive layer may be continuous even when the space between the adherend and the first semiconductor element and the first semiconductor element are simultaneously or sequentially buried by using a component forming the adhesive layer.
- the adhesive layer has a low melt viscosity at a temperature of 110 ° C. and a shear rate of 5 rad / s
- the first semiconductor device and the second semiconductor device are bonded (die bonded) through the adhesive layer.
- the adhesive may flow out to the edge of the second semiconductor element to form a fillet, and when the adhesive layer exhibits a melt viscosity that is too high at a temperature of 110 ° C. and a shear rate of 5 rad / s, flowability may be deteriorated.
- the 'filling 1 ' refers to a state in which the exposed portion to the outside is not substantially present by covering or coating the outer surface or a predetermined space of the semiconductor device with the adhesive layer.
- thixotropy is defined as the ratio of the shear rate of 5 rad / s and the melt viscosity of the adhesive layer at a temperature of 110 ° C to the shear rate of 0.5 rad / s to the melt viscosity of the adhesive layer at a temperature of 110 ° C.
- the index may be from 1.5 to 7.5, or from 2.0 to 7.
- the thixotropic index is the ratio of melt viscosity of said adhesive layer at 5 rad / s shear rate and 110 ° C temperature shear rate and a temperature of 110 ° C of 0.5 rad / s to the melt viscosity of the adhesive layer in the.
- Thixotropic Index at 11 CTC of the adhesive layer is 1.5 to 7.5, or 2.0 to 7.
- the thixotropic index at 1K C of the adhesive layer is 1. If less than 5, the adhesive layer may flow when the second semiconductor element is fixed using the adhesive layer, and the reliability of manufacturing the semiconductor device may be greatly reduced. In addition, if the thixotropic index at 110 ° C of the adhesive layer is greater than 7.5, the initial viscosity during die bonding using the adhesive layer may be significantly increased, so that it may be difficult to embed the first semiconductor device, and the bending of the second semiconductor device may be caused after die bonding. This can happen. ⁇ '
- the thixotropy index of the adhesive layer is a method of adjusting or changing a main component included in the adhesive layer, a method of controlling a content of the main component of the adhesive layer and an inorganic filler that may be optionally included, or a change in rheology during manufacturing of the adhesive layer. It can adjust through the method of adding an agent, etc.
- the Crab 1 semiconductor device and the Crab 2 semiconductor device may have a thickness of 10 / im to 500, or 15 to 100, or to 80, respectively.
- the distance from one surface of the adherend to one surface of the second semiconductor element may be 10 ⁇ 1 to ⁇ , ⁇ / ⁇ , or l / m to 500, or 20 ⁇ «m to 300.
- the distance from one surface of the first semiconductor element to one surface of the second semiconductor element may be 5 / m to 300 or 10 to 200.
- the adhesive layer is 10 to 10,000 Pa.
- thermoplastic resin examples include polyimide, polyether imide, polyester imide, polyamide, polyether sulfone, polyether ketone, polyolefin, polyvinyl chloride, phenoxy, reactive butadiene acrylic Ronitrile copolymer rubber, (meth) acrylate type resin, these 2 or more types of mixtures, or these 2 or more types of copolymers are mentioned.
- the thermoplastic resin includes an epoxy-based functional group
- (Meth) acrylate type resin containing a (meth) acrylate type repeating unit can be included.
- the (meth) acrylate-based resin may be a (meth) acrylate-based resin including a (meth) acrylate-based repeating unit including an epoxy-based functional group and having a glass transition temperature of -KTC to 30 ° C. .
- the (meth) acrylate-based resin may include 0.01 wt% to 25 wt% of a (meth) acrylate-based repeating unit including an epoxy-based functional group.
- the epoxy-based functional group may include an epoxy group or a glycidyl group.
- the adhesive is a thermoplastic resin having a glass transition temperature of -10 ° C to 30 ° C; Two or more liquid epoxy resins having different viscosities; And a curing agent including a phenol resin.
- the adhesive includes two or more liquid epoxy resins having different viscosities together with the curing agent including the thermoplastic resin and the phenolic resin, the embedding of space between the adherend and the crab semiconductor device fixed by the flip chip connection or the The fixation between the first semiconductor element and the second semiconductor element
- the bonding of the first semiconductor element and the second semiconductor element in the process of die bonding, the adhesive leaks to the edge of the second semiconductor element may prevent the formation of a fillet).
- Two or more kinds of liquid epoxy resins having different viscosities may include two or more kinds of liquid epoxy resins having different viscosity ranges.
- the two or more liquid epoxy resins having different viscosity may include a low viscosity liquid epoxy resin having a melt viscosity of 1 mPa ⁇ s to 500 mPa ⁇ s at 25 ° C.
- the two or more liquid epoxy resins having different viscosity may include a high viscosity liquid epoxy resin having a melt viscosity of 1,000 mPa-s to 20, 000 mPa ⁇ s at 25 ° C.
- the two or more liquid epoxy resins having different viscosity may further include a liquid epoxy resin other than the low viscosity liquid epoxy resin and the high viscosity liquid epoxy resin described above.
- the adhesive layer is 1 mPa at 25 ° C.
- Low viscosity liquid epoxy resins having a melt viscosity of from s to 500 mPa ⁇ s and from 1,000 mPa-s to 20, 000 mPa at 25 ° C.
- the high viscosity liquid epoxy water having a melt viscosity of s may be included in a weight ratio of 1:10 to 10: 1 or in a weight ratio of 2: 8 to 8: 2.
- a fillet may occur around the crab 2 semiconductor device or an increase thereof may occur.
- the embedding of the first semiconductor device and the bump may be reduced.
- the adhesive layer further includes a solid epoxy resin together with the liquid epoxy resin, it is possible to more easily implement the characteristics of the above-described adhesive layer.
- the solid epoxy resin and the liquid epoxy resin are used together, the degree of curing of the adhesive layer can be easily adjusted to increase the adhesive performance, and the thixotropy index of the adhesive layer is adjusted to 1.5 to 7.5 at 110 ° C. Can be.
- the adhesive layer may have an appropriate fluidity, for example, The adhesive layer may have a melt viscosity of 10 to 10,000 Pa's at a temperature of 110 ° C. and a shear rate of 5 rad / s.
- the liquid epoxy resin may form a substrate (or matrix) of an adhesive component together with a curing agent including a phenol resin and a thermoplastic resin having a glass transition temperature of ⁇ 10 ° C. to 30 ° C., wherein the adhesive layer is relatively low. It has viscosity and excellent adhesion and flow characteristics optimized for semiconductors, and also has high breaking strength and low elongation at break.
- Specific examples of the solid epoxy resins include biphenyl epoxy resins, bisphenol A epoxy resins, bisphenol F epoxy resins, cresol novolac epoxy resins, phenol novolac epoxy resins, tetrafunctional epoxy resins and triphenol methane type epoxy resins.
- At least one polymer resin selected from the group consisting of alkyl-modified triphenol methane-type epoxy resins, naphthalene-type epoxy resins, dicyclopentadiene-type epoxy resins and dicyclopentadiene-modified phenol-type epoxy resins.
- the softening point of the solid epoxy resin may be 50 ° C to 120 ° C. If the softening point of the solid epoxy resin is too low, the adhesion of the resin composition for semiconductor bonding may be excessively high. If the softening point of the solid epoxy resin is too high, the semiconducting layer may have low fluidity at high temperature and the adhesion may be lowered.
- the solid phase may have an epoxy equivalent of 100 to 1,000.
- the phenol resin may have a softening point of 6 (rc or more, or 6 (rc to i60 ° c).
- the base material (or matrix) of the adhesive component together with the liquid epoxy resin and the thermoplastic resin having a glass transition temperature of -io ° c to 3 (rc)
- the adhesive layer may have a higher tensile modulus and excellent adhesion at room temperature, and have a flow characteristic optimized for semiconductors, in particular, a weight ratio of two or more liquid epoxy resins having different viscosity dispersions with respect to the phenol resin. May be 0.3 to 1.5.
- the weight ratio of the liquid epoxy resin to the phenol resin is too high, the melt viscosity of the adhesive layer is lowered to have an adhesive property at room temperature, the tensile modulus at room temperature is lowered and the tensile rate may be greatly increased.
- the weight ratio of the liquid epoxy resin to the phenol resin is too low, the modulus generated when elongated at room temperature is too high or the tensile rate at room temperature is greatly reduced, the production yield of the final product may be significantly reduced.
- the liquid epoxy resin is biphenyl epoxy resin bisphenol A epoxy resin, bisphenol F epoxy resin, cresol novolac epoxy resin, phenol novolac epoxy resin, tetrafunctional epoxy resin, triphenol methane type epoxy resin, alkyl modified triphenol methane It may include one or more selected from the group consisting of a type epoxy resin, a naphthalene type epoxy resin, a dicyclopentadiene type epoxy resin and a dicyclopentadiene modified phenol type epoxy resin.
- the curing agent may further include at least one compound selected from the group consisting of an amine curing agent and an acid anhydride curing agent.
- the adhesive layer may further include a curing catalyst.
- the curing catalyst serves to promote the action of the curing agent or curing of the adhesive layer, and a curing catalyst known to be used in the manufacture of a semiconductor adhesive layer or the like may be used without any significant limitation.
- the curing catalyst may be one or more selected from the group consisting of phosphorus compounds, boron compounds, indium boron compounds, and imidazole compounds.
- the thixotropy index of the adhesive layer may also be adjusted by adding a rheology modifier when preparing the adhesive layer.
- a rheology modifier when the shear force is not applied, the material may form a net structure without maintaining a chemical bond and maintain its shape. When the shear force is applied, the net structure may collapse. . Accordingly, the adhesive layer may maintain the shape without flowing when the shearing force is not applied before or after the die bonding, and when the shearing force is applied to the adhesive resin during die bonding, the adhesive layer may have favorable physical properties and performance for embedding properties. .
- the adhesive layer is an inorganic layering agent and rheology It may further comprise one or more selected from the group consisting of modifiers.
- the kind of the inorganic filler that can be included in the adhesive is not particularly limited, and a general organic layering agent or an inorganic layering agent can be used, and preferably an inorganic layering agent can be used.
- Specific examples of the inorganic layering agent ⁇ may use silica having a diameter of 100 ran or more (for example, wet silica having a diameter of 100 nm or more), alumina, barium sulfate, etc., and improve the reliability by adsorbing ionic impurities. Ion adsorbents may be used as the inorganic layering agent.
- Magnesium hydroxide, magnesium carbonate, magnesium silicate, magnesium bran such as magnesium oxide, calcium silicate, calcium carbonate, calcium type like calcium oxide, alumina, aluminum hydroxide, aluminum nitride, aluminum borate whisker
- Aluminum-based, zirconium-based, antimony bismuth-based and the like can be used as the ion adsorbent, and two or more thereof can be used in combination.
- rheology modifiers that may be included in the adhesive layer
- components known in the art may be used, for example, synthetic fine silica such as silica having a diameter of less than 100 nm (for example, fumed silica having a diameter of less than 100 nm).
- synthetic fine silica such as silica having a diameter of less than 100 nm (for example, fumed silica having a diameter of less than 100 nm).
- Type bentonite type, ultra fine precipitated calcium carbonate, organic bentonite type, surface treated calcium carbonate type, metal stone gum type, hydrogenated castor oil, polyamide wax, polyethylene oxide, vegetable oil, polymer oil, linseed polymer oil, fatty acid Dimers or combinations of two or more thereof can be used.
- More specific examples of such rheology modifiers include the trade name "CAB-0-SIL” from Cabot Corp. of Boston, Massachusetts, or Evonik Industries, Essen, Germany. The brand name "Aerosil (AER0SIL)
- the inorganic layer filler may be included in an appropriate amount in consideration of the thixotropic index, fluidity, and embedding properties of the adhesive layer.
- the adhesive layer may include 10 to 50 weight 3 ⁇ 4 of an inorganic filler. can do.
- the rheology modifier is titrated in consideration of the thixotropic index, fluidity, and embedding of the adhesive layer.
- Content may be included, for example, the adhesive layer may comprise 0.01 to 15% by weight of rheology modifier.
- the content of the rheology modifier in the adhesive layer is excessive, not only the undispersed state occurs when the coating solution is prepared, but also the viscosity of the adhesive layer is sharply increased, thereby greatly reducing the embedding properties.
- the adhesive layer includes an inorganic layering agent and a rheology modifier
- the sum of the weights of the inorganic layering agent and the rheology modifier may be 5 to 50% by weight in the adhesive layer.
- substrate As a raw material of the to-be-adhered body to which a 1st semiconductor element is fixed by flip chip connection, a board
- substrate conventionally well-known board
- the lead frame a metal lead frame such as a Cu lead frame, a 42Al loy lead frame, or an organic substrate formed of glass epoxy, BT (bismaleimide-triazine), polyimide, or the like can be used.
- the adherend material is not limited to the above, and a circuit board which can be used by mounting a semiconductor element and electrically connecting the semiconductor element can be used without any significant limitation.
- a step of filling a space between the adherend and the first semiconductor element fixed by the flip chip connection on the adherend and the first semiconductor element with an adhesive for semiconductor; And bonding a second semiconductor element to the semiconductor adhesive, wherein the semiconductor adhesive has a melt viscosity of 10 to 10,000 Pa ⁇ s at a temperature of 110 ° C. and a shear rate of 5 rad / s. that a has, defined as the ratio of melt viscosity of the adhesive at 5 rad / s shear rate and 110 ° C 0.5 for the melt viscosity of the adhesive at a temperature of rad / s shear rate and 110 ° C temperature of the A thixotropy index of 1.5 to 7.5 can be provided.
- the space between the adherend and the first semiconductor element fixed by the flip chip connection and the first semiconductor are filled together.
- the method it is possible to provide a semiconductor device having a structure capable of greatly improving the efficiency of a semiconductor manufacturing process by omitting an underfill process and improving signal transmission efficiency and transmission speed.
- Flip chips are used with adhesives for semiconductors having a melt viscosity of 10 to 10, 000 Pa's at a temperature of 110 ° C and a shear rate of 5 rad / s, or a melt viscosity of 40 to 5,000 Pa's.
- the space between the adherend and the first semiconductor element fixed by the connection can be more easily filled, and when the adhesive for the semiconductor contacts the first semiconductor element and the shear force is applied in the bonding process of the second semiconductor element, the semiconductor Since the fluidity of the adhesive for the adhesive is increased, it is possible to more effectively and efficiently bury the crab 1 semiconductor device.
- the ratio of the melt viscosity of the semiconductor adhesive for at 5 rad / s shear rate and 110 ° C shear rate and a temperature of 110 ° C at a temperature of 0.5 rad / s to the melt viscosity of the semiconductor adhesive for The thixotropic index defined by may be 1.5 to 7.5, or 2.0 to 7.
- Thixotropic Index at 110 ° C. of the adhesive for semiconductors is 1.5 to 7.5, or 2.0 to 7.
- the thixotropic index at 1 C of the semiconductor adhesive is less than 1.5, the adhesive layer may flow when the second semiconductor device is fixed using the semiconductor adhesive, and the reliability of semiconductor device manufacturing may be greatly reduced.
- the thixotropy index at 110 ° C of the adhesive for the semiconductor is greater than 7.5, the initial viscosity during die bonding using the semiconductor adhesive may be significantly increased, it may be difficult to bury the first semiconductor device, the second after die bonding Warpage of the semiconductor device may occur.
- the manufactured semiconductor device may be a semiconductor device of the embodiment, and details of the manufacturing method of the embodiment include all the details described above with respect to the semiconductor device of the embodiment.
- the step of filling the space between the adherend and the first semiconductor element fixed by the flip chip connection on the adherend and the first semiconductor element with a semiconductor adhesive Between the adherend and the first semiconductor element using only the adhesive for semiconductors. Embedding the space and the first semiconductor device simultaneously or sequentially.
- the space between the adherend and the system first semiconductor element and the first semiconductor element are simultaneously or sequentially buried through the semiconductor adhesive, they are not distinguished as separate layers within the adhesive layer in the final product. More specifically, the step of simultaneously or sequentially filling the space between the adherend and the first semiconductor element and the first semiconductor element using only the semiconductor adhesive, the flip chip connection on the adherend and the adherend Bonding the second semiconductor element on the semiconductor adhesive in a state where the space between the first semiconductor elements fixed by the second semiconductor element and the first semiconductor element are embedded with a semiconductor adhesive and curing at a high temperature / high pressure in a pressurized bourbon;
- the adhesive layer of the second semiconductor device may fill the space around the solder bumps of the first semiconductor device, that is, the space between the first semiconductor device and the adherend.
- a sealing process is a process of sealing a semiconductor device with the said adhesive agent for semiconductors, and the adhesive layer formed from this. This sealing process may be performed to protect the first semiconductor element mounted on the adherend or the flip chip formed between the first semiconductor element and the adherend.
- the first semiconductor element is fixed to the adherend by flip chip connection, and the circuit surface of the cradle 1 semiconductor element is a so-called facedown mounting in which the substrate is opposed to the adherend.
- a plurality of projection electrodes such as bumps are provided in the system-1 semiconductor element, and the projection electrodes and the electrodes on the adherend are connected.
- the adhesive layer described above is layered between the adherend and the first semiconductor element instead of the usual underfill material.
- connection method is not particularly limited and can be connected by a conventionally known flip chip bonder.
- the first semiconductor element is melted by contacting a projection electrode such as a bump formed on the first semiconductor element with a bonding conductive material (solder, etc.) adhered to the connection pad of the adherend, while melting the conductive material.
- the electrical conduction between the substrate and the adherend can be secured, and the first semiconductor element can be fixed to the adherend (flip chip bonding).
- the pressure conditions are from 0.5 to 490N.
- the material for forming bumps as the protruding electrodes is not particularly limited, and examples thereof include tin-lead-based metals, tin-silver-based metals, tin-silver-copper-based metals, tin-zinc-based metals, and tin-zinc-bismuth. Solders (alloys), such as a metal type
- the underfill material a conventionally known liquid or film-like underfill material can be used.
- the buried adhesive layer is attached to the second semiconductor element and die bonding is performed on the first semiconductor element.
- the adhesive layer molds the first semiconductor element and is in contact with the adherend around the first semiconductor element.
- the step of simultaneously or sequentially filling the space between the adherend and the first semiconductor element and the first semiconductor element using only the semiconductor adhesive may include flip chip on the adherend and the adherend. Bonding the second semiconductor element on the semiconductor adhesive in a state where the space between the first semiconductor element fixed by the connection and the first semiconductor element is embedded with a semiconductor adhesive, and curing at a high temperature / high pressure in a pressure oven.
- the adhesive layer of the second semiconductor device may fill the space around the solder bumps of the first semiconductor device, that is, the space between the first semiconductor device and the adherend through the step.
- the temperature at the time of performing the heat treatment is preferably carried out at a pressure of from 50 to 20 CTC at a pressure of l.OMPa, more preferably from 0.1 to 0.8 MPa at 90 ° C to 180 ° C.
- a post-curing step of post-curing the sealing resin may be performed.
- the sealing resin lacking curing is completely cured in the sealing step.
- the heating temperature in the post-curing step is different depending on the kind of the sealing resin, for example, is in the range of 165 to 185 ° C, the heating time is from about 0.5 to 8 hours.
- a semiconductor package can be manufactured by going through a sealing process or a post-cure process.
- a semiconductor device having a structure capable of greatly improving the efficiency of a semiconductor manufacturing process by omitting an underfill process and improving a signal transmission efficiency and a transmission speed, and a fabrication capable of manufacturing such a semiconductor device A method may be provided.
- FIG. 1 is a schematic cross-sectional view of a semiconductor device manufactured in an embodiment of the invention.
- Phenolic resin KH-602KDIC a curing agent for epoxy resins, bisphenol A novolac resin, hydroxyl equivalent 121 g / eq, softening point: 133 ° C) 50 g, high viscosity liquid epoxy resin RE-310S (Japanese gunpowder, bisphenol A epoxy resin) , Epoxy equivalent 180 g / eq, Viscosity [25 ° C]: 15,000 mPa-s) 40 g, low viscosity liquid epoxy resin SEJ-01R (manufactured by Nippon Kayaku, Epoxy equivalent 130 g / eq, viscosity [25 ° C]) : 250 mPa-s) 26 g, 20 g of the thermoplastic acrylate resin obtained in Production Example 1, silane coupling agent (KBM-403, Setsu Chemical,, Gamma-Glycidoxypropyltrimethoxysilane) lg, curing accelerator 2PZ ( Shikoku Kasei
- the resin composition solution for semiconductor bonding prepared above was applied on a release-treated polyethylene terephthalate film (thickness 3 ⁇ ) in a litre
- a first semiconductor element (a square with one side of 5 ⁇ , thickness 50 // m) having 24 lead-free solder bumps having a height of 40 ⁇ at a pitch of 0.5 mm 3 was bonded to a BGA substrate using a chip chip bonder. Conditions at that time, the temperature was 250 ° C., pressure 50N, 10 seconds.
- KDS-8170 Liquid Epoxy Resin (Kukdo Chemical, Bisphenol F Epoxy Epoxy Equivalent 157 g / eq, Viscosity [25 ° C]: 1500 mPa-s)
- Epoxy Resin E0CN-104S Japanese gunpowder, cresol novolac resin, epoxy equivalent 214 g / eq, softening point: 92 V
- a semiconductor device was fabricated by heat-treating a BGA substrate to which a crab 2 semiconductor device was bonded, and heat-treating the adhesive layer at 135 ° C for 1 hour and 7 atmospheres with a pressure drier.
- the fabricated semiconductor device is cut, the cut surface is observed using an optical microscope (200 times), and if voids are well buried around the first semiconductor element, " 0 " and voids are observed around the first semiconductor element. It analyzed and evaluated as "X”.
- Experimental Example 3 Measurement of Molding Characteristics in Flip Chip Connection
- the space between the first semiconductor and the adherend and the filling of the solder bumps were checked using the X-ray inspector facility.
- the semiconductor device was fabricated as in Experimental Example 2, the amount of adhesive spreading around the second semiconductor element was measured, and the length of the longest adhesive per device was measured to evaluate the fillet property to be good if it is 300 ⁇ or less. And fillet if the length of the longest adhesive is greater than 300 m. It evaluated as the characteristic defect "X".
- Thixotropic index The ratio of the shear rate of 5 rad / s to the melt viscosity of the adhesive layer at a temperature of 1 KTC and the shear viscosity of 0.5 rad / s and the melt viscosity of the adhesive layer at a temperature of 11 CTC are shown in Table 2 above.
- the adhesive films for semiconductor devices of Examples 1 to 5 may prevent the adhesive flowing out at a high temperature during the bonding process of the crab 2 semiconductor device, or the adhesive flowing out to the edge of the semiconductor device to form a fillet. It has been confirmed that the primary semiconductor body can be molded without voids and the molding characteristics around the connection of the first semiconductor element can be well realized.
- the adhesive film of Comparative Example 1 it was confirmed that an excessive amount of adhesive flowed out to the edge of the second semiconductor element, and the fillet was formed.
- the adhesive films of Comparative Examples 2 and 3 had low performance of embedding the first semiconductor element. In particular, voids remain around the junction of the Crab 1 semiconductor element, which causes high temperature curing and moisture absorption. Thereafter, it was confirmed that delamination occurred between the substrate and the adhesive during the reflow process.
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Abstract
Description
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Priority Applications (3)
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US15/752,666 US10253223B2 (en) | 2016-03-31 | 2017-03-31 | Semiconductor device and method for manufacturing the same using an adhesive |
CN201780003020.6A CN107924912B (zh) | 2016-03-31 | 2017-03-31 | 半导体器件及其制造方法 |
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