TW201723117A - 黏著膜、半導體元件的製造方法及半導體元件 - Google Patents

黏著膜、半導體元件的製造方法及半導體元件 Download PDF

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TW201723117A
TW201723117A TW105130768A TW105130768A TW201723117A TW 201723117 A TW201723117 A TW 201723117A TW 105130768 A TW105130768 A TW 105130768A TW 105130768 A TW105130768 A TW 105130768A TW 201723117 A TW201723117 A TW 201723117A
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adhesive film
semiconductor element
semiconductor
resin
film according
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TW105130768A
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TWI680173B (zh
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金丁鶴
金熹正
金思拉
李光珠
金榮國
南承希
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Ｌｇ化學股份有限公司
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    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
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Abstract

本發明是關於一種在110℃下之搖變指數為1.5至7.5的黏著膜，所述黏著膜用於固定第一半導體元件及第二半導體元件，所述第一半導體元件之面積與所述第二半導體元件之面積之比為0.65或小於0.65；一種使用所述黏著膜製造半導體元件之方法；及一種半導體元件。

Description

黏著膜、半導體元件的製造方法及半導體元件
本發明是關於一種黏著膜、一種製造半導體元件之方法及一種半導體元件。
近年來，隨著電子元件朝向小型化、高性能以及大容量之趨勢增加，對於高密度、高度整合半導體封裝之需求已快速增加，且因此半導體晶片之尺寸變得愈來愈大，且為了改良整合程度，愈來愈使用多級堆疊晶片之堆疊封裝方法。
作為堆疊封裝方法，導線接合法（其中半導體片狀元件之電極部分與安裝於引線框或桿上的導體層藉由諸如金或鋁等之金屬線連接）或倒裝晶片法（其中當半導體晶片附著至電路板時，其為焊接的，因為其在晶片之較低側上使用電極圖案而不使用諸如金屬鉛（導線）之額外連接結構或諸如球狀柵格陣列（ball grid array；BGA）等之中間介質）為吾人所知。
同時，半導體控制元件（控制器）經配備以便增加半導體設備中信號傳輸之簡易性或控制半導體元件之操作，但若此類半導體控制元件未得到恰當地固定，則半導體封裝之信號傳輸效率或速度可能會有所降低，半導體元件之結構在多級堆疊封裝方法中可能會變得不穩定，且半導體設備之製造良率或可靠性可能會有所降低。
因此，為了容易地在多級堆疊封裝方法中內埋半導體元件，正在研發各種膜成形黏著劑或液態黏著劑。
[ 技術問題 ] 本發明之目標在於提供一種半導體用黏著膜，其可較容易地內埋作為半導體控制元件之第一半導體元件，所述黏著膜可防止在埋入之後填角外流至第二半導體元件周圍以促進導線接合，可使第二半導體元件之彎曲降至最低以在第二半導體元件上容易地且穩定地建構多級堆疊，且可改良最終製造之半導體封裝的信號傳輸效率及速度。
本發明之另一目標在於提供一種使用半導體用黏著膜製造半導體元件之方法。
本發明之另一目標在於提供一種包含半導體用黏著膜的半導體元件。[ 技術解決方案 ]
本文提供一種在110℃下之搖變指數為1.5至7.5的黏著膜，所述黏著膜用於固定第一半導體元件及第二半導體元件，所述第一半導體元件之面積與所述第二半導體元件之面積之比為0.65或小於0.65。
此外，本文提供一種用於製造半導體元件之方法，包含使用上文所解釋之黏著膜固定第一半導體元件及第二半導體元件之步驟，所述第一半導體元件之面積與所述第二半導體元件之面積之比為0.65或小於0.65。 此外，本文提供一種半導體元件，包含：形成於黏著體上之第一半導體元件；及經由上述黏著膜接合至第一半導體元件之第二半導體元件，其中第一半導體元件之面積與第二半導體元件之面積之比為0.65或小於0.65。
在下文中，將較詳細地解釋根據本發明之特定實施例的黏著膜、用於製造半導體元件之方法及半導體元件。
根據本發明之一個實施例，提供一種在110℃下之搖變指數為1.5至7.5的黏著膜，所述黏著膜用於固定第一半導體元件及第二半導體元件，所述第一半導體元件之面積與所述第二半導體元件之面積之比為0.65或小於0.65。
本發明人發現，若使用具有特定搖變指數之黏著膜固定第一半導體元件及第二半導體元件，所述第一半導體元件之面積與所述第二半導體元件之面積之比為0.65或小於0.65，則第一半導體元件可較容易地內埋，且在內埋之後，第二半導體元件之彎曲可降至最低，由此促進在第二半導體元件上建構多級堆疊。由此，本發明人經由實驗證實，包含第一半導體元件及第二半導體元件的多級堆疊封裝之結構可較為穩定，藉此改良最終製造之半導體封裝的信號傳輸效率及速度，且完成本發明。
特定言之，若使用在110℃下之搖變指數為1.5至7.5或3至7或4至6的半導體用黏著膜，則在黏著膜接觸第一半導體元件且在第二半導體元件之接合過程中施加剪切力的情況下，黏著膜之流動性增加以較容易地且有效地內埋第一半導體元件，且在內埋之後，可防止填角外流至第二半導體元件周圍，由此促進導線接合且同時防止半導體元件污染。
術語『內埋（burying）』意謂用黏著膜覆蓋或塗佈半導體元件之外表面，且因此不會實質上存在暴露於外之部分。
藉由使用黏著膜，在內埋或固定第一半導體元件及第二半導體元件之過程中，第一半導體元件可較容易地內埋，且在內埋之後，可防止填角外流至半導體元件周圍，由此促進導線接合且同時防止半導體元件污染，且在內埋之後，第二半導體元件之彎曲可降至最低，藉此促進在第二半導體元件上建構多級堆疊。由此，包含第一半導體元件及第二半導體元件的多級堆疊封裝之結構可較為穩定，藉此改良最終製造之半導體封裝的信號傳輸效率及速度，且多級堆疊封裝可變得較為小型化且較為緊密。
搖變指數為0.5弧度/秒之剪切速率及110℃之溫度下的黏著膜之熔融黏度與5弧度/秒之剪切速率及110℃之溫度下的黏著膜之熔融黏度之比。
如上文所解釋，黏著膜在110℃下之搖變指數為1.5至7.5或3至7。若黏著膜在110℃下之搖變指數小於1.5，則當使用實施例之黏著膜固定第二半導體元件時，黏著膜可能會流動，且由此周圍環境可能受到污染以致使導線接合困難，且半導體元件製造之可靠性可能會顯著降低。此外，若黏著膜在110℃下之搖變指數大於7.5，則在使用實施例之黏著膜進行晶粒接合時，初始黏度可能顯著增加，且由此可能難以內埋第一半導體元件，且在晶粒接合之後，可能產生第二半導體元件之彎曲。
黏著膜之搖變指數可藉由以下方法來控制：一種對黏著膜中所包含之主要組分進行調整或改質之方法、一種控制黏著膜之主要組分及可選擇性地包含在內的無機填充劑之含量的方法、一種在製造黏著膜時添加流變改質劑之方法等。
同時，黏著膜在110℃之溫度下的熔融黏度可為500帕▪秒至10,000帕▪秒且剪切速率為5弧度/秒。若黏著膜在高溫下之熔融黏度過低，則在使用黏著膜晶粒接合第一半導體元件及第二半導體元件之過程中，黏著劑可能會外流至半導體元件之邊緣（填角形成）。並且，若黏著膜在高溫下之熔融黏度過高，則流動性可能會降低且可能變得難以固定或內埋第一半導體元件及第二半導體元件；或者第二半導體元件之彎曲可能會變得嚴重，且因此額外多級堆疊可能會變得困難。
如上文所解釋，黏著膜可用於固定第一半導體元件及第二半導體元件，其中所述第一半導體元件之面積與所述第二半導體元件之面積之比為0.65或小於0.65或0.1至0.65。
若所述第一半導體元件之面積與所述第二半導體元件之面積之比大於0.65，則由於內埋面積可能增加，且可填充經內埋之第一半導體元件之邊緣部分的黏著層之絕對量不足，可能變得難以使用黏著膜內埋第一半導體元件，且可於內部捕獲之空隙之量可能會增加。
第一半導體元件及第二半導體元件可分別具有10微米至500微米之厚度。
黏著膜之厚度可為1微米至200微米或10微米至180微米。若黏著膜之厚度變得過薄，則可能不足以用於模製元件或可能難以充分地保持機械特性。並且，若第二黏著膜之厚度過厚，則在固定第一半導體元件及第二半導體元件之過程或其他半導體製造過程中，可能難以進行操控或效率可能會降低。
黏著膜可包含玻璃轉化溫度為-10℃至30℃之熱塑性樹脂、環氧樹脂及包含苯酚樹脂之固化劑。
儘管熱塑性樹脂之實例不受限制，但可提及例如聚醯亞胺、聚醚醯亞胺、聚酯醯亞胺、聚醯胺、聚醚碸、聚醚酮、聚烯烴、聚氯乙烯、苯氧基、反應性丁二烯丙烯腈共聚物橡膠（reactive butadiene acrylonitrile copolymer rubber）、(甲基)丙烯酸酯類樹脂、其兩種或大於兩種的混合物或者其兩種或大於兩種的共聚物。
熱塑性樹脂可包含(甲基)丙烯酸酯類樹脂，其包含含環氧基類官能基之(甲基)丙烯酸酯類重複單元。
特定言之，(甲基)丙烯酸酯類樹脂可為包含含環氧基類官能基之(甲基)丙烯酸酯類重複單元且玻璃轉化溫度為-10℃至30℃之(甲基)丙烯酸酯類樹脂。
(甲基)丙烯酸酯類樹脂可包含0.1重量%至25重量%的包含環氧基類官能基之(甲基)丙烯酸酯類重複單元。環氧樹脂可包含固態環氧樹脂及液態環氧樹脂。
環氧樹脂之平均環氧當量可為100至1000。
同時，就實現上文所解釋的黏著膜之特性而言，更佳為一起使用固態環氧樹脂及液態環氧樹脂作為環氧樹脂。
藉由一起使用固態環氧樹脂及液態環氧樹脂，黏著膜之固化程度可容易得到控制，由此增加黏著效能，且黏著層在110℃下之搖變指數可控制在1.5至7.5。
此外，藉由一起使用固態環氧樹脂及液態環氧樹脂，黏著膜可具有合適流動性，且舉例而言，黏著膜在110℃之溫度下的熔融黏度可為500帕▪秒至10,000帕▪秒且剪切速率為5弧度/秒。
液態環氧樹脂可與玻璃轉化溫度為-10℃至30℃之熱塑性樹脂及包含苯酚樹脂之固化劑一起形成黏著組分之基質（substrate/matrix），且其向黏著膜提供經最佳化以用於半導體之極佳黏著及流動特性且同時具有相對較低黏度，且亦提供高斷裂強度及低斷裂伸長率。
苯酚樹脂之軟化點可為50℃或大於50℃或60℃至160℃。
如上文所解釋，藉由使用軟化點為50℃或大於50℃之苯酚樹脂，其可與液態環氧樹脂及玻璃轉化溫度為-10℃至30℃之熱塑性樹脂一起形成黏著組分之基質（substrate/matrix），且其可向黏著膜提供室溫下之較高拉伸模數及極佳黏著度及經最佳化以用於半導體之流動特性。
儘管液態環氧樹脂之特定種類及特性不顯著受限，但舉例而言，液態環氧樹脂在25℃下之黏度可為500毫帕·秒至20,000毫帕·秒。液態環氧樹脂之環氧當量可為100至1000。
具體而言，在黏著膜中，液態環氧樹脂與苯酚樹脂之重量比可為0.3至1.5。
若液態環氧樹脂與苯酚樹脂之重量比過高，則黏著膜之熔融黏度可能會降低，由此在室溫下具有黏附特性，且室溫下之拉伸模數可能會降低且室溫下之伸長率可在很大程度上增加，由此在晶圓切割時產生黏著膜之重新黏著。若液態環氧樹脂與苯酚樹脂之重量比過低，則在室溫下之伸長率時產生之模數可變得過高或室溫下之伸長率可在很大程度上降低，由此顯著降低最終產物之製造良率，且黏著膜可能不具有與晶圓之足夠黏著力，由此在製造過程中在晶圓與黏著膜之間產生去接合。
環氧樹脂可包含一或多種由以下各者所構成的族群中選出之類別：聯苯類環氧樹脂、雙酚A環氧樹脂、雙酚F環氧樹脂、甲酚酚醛清漆環氧樹脂（cresol novolac epoxy resin）、苯酚酚醛清漆環氧樹脂、四官能環氧樹脂、三苯基甲烷型環氧樹脂、經烷基改性之三苯基甲烷型環氧樹脂、萘型環氧樹脂、二環戊二烯型環氧樹脂以及經二環戊二烯改性之苯酚型環氧樹脂。
固化劑可更包含一或多種由胺類固化劑及酸酐固化劑所構成的族群中選出之化合物。
用於半導體黏著之樹脂組成物可更包含固化催化劑。
固化催化劑執行固化劑之功能或促進用於半導體黏著之樹脂組成物的固化之功能，且可使用已知用於製造半導體黏著膜中之固化催化劑等而不加以特定限制。舉例而言，可使用由以下各者所構成的族群中選出之一或多者作為固化催化劑：磷類化合物、硼類化合物、磷-硼類化合物及咪唑類化合物。
如上文所解釋，當製造黏著膜時，黏著膜之搖變指數亦可藉由添加流變改質劑來控制。藉由使用流變改質劑，當未施加剪切力時，即使並未形成化學鍵，仍可形成網狀結構以維持形狀，且當施加剪切力時，網狀結構可崩塌。因此，在晶粒接合之前或之後未施加剪切力之情況下，黏著膜可維持形狀而不會流動，且在晶粒接合時向黏著樹脂施加剪切力之情況下，流動性可增加以提供有利於內埋之特性及效能。
特定言之，黏著膜可更包含由無機填充劑及流變改質劑所構成的族群中選出之一或多者。
可包含於黏著膜中的無機填充劑之種類不受特定限制，且可使用常用有機填充劑或無機填充劑，且較佳地，可使用無機填充劑。作為無機填充劑之特定實例，可使用直徑為100奈米或大於100奈米之二氧化矽（例如直徑為100奈米或大於100奈米之沈澱二氧化矽）、氧化鋁、硫酸鋇等，且亦可使用可吸附離子雜質以改良可靠性之離子吸附劑作為無機填充劑。此類離子吸附劑不受特定限制，且可使用鎂類離子吸附劑，諸如氫氧化鎂、碳酸鎂、矽酸鎂以及氧化鎂；鈣類離子吸附劑，諸如矽酸鈣、碳酸鈣以及氧化鈣；鋁類離子吸附劑，諸如氧化鋁、氫氧化鋁、氮化鋁以及硼酸鋁晶鬚（aluminum borate whisker）；鋯類離子吸附劑及銻類離子吸附劑以及鉍類離子吸附劑，且可以組合形式使用其兩種或大於兩種類別。
作為可包含於黏著膜中之流變改質劑，可使用相關技術領域中之已知組分，且舉例而言，可使用合成性粉末二氧化矽類化合物，諸如直徑小於100微米之二氧化矽（例如直徑小於100微米之煙霧狀二氧化矽）、膨潤土類化合物（bentonite-based compound）、可微沈降之碳酸鈣、有機膨潤土類化合物、經表面處理之碳酸鈣化合物、金屬皂類化合物（metal soap-based compound）、氫化蓖麻油、聚醯胺蠟、聚氧化乙烯化合物、植物油、聚合油、聚合亞麻籽油、脂肪酸二聚體或其兩種或大於兩種之混合物。
此類流變改質劑之更特定實例可包含來自卡巴特公司（Cabot Corp.）（Boston, Massachusetts, USA）之商標名「卡博特（CAB-O-SIL）」或來自贏創工業（Evonik Industries）（Essen, Germany）之商標名「艾羅賽爾（AEROSIL）」等。
若黏著膜包含無機填充劑，則其可包含考慮到黏著膜之搖變指數、流動性以及可內埋性而呈最佳含量形式之無機填充劑，且舉例而言，黏著膜可包含10重量%至50重量%之無機填充劑。然而，若黏著膜中無機填充劑之含量過量，則黏著膜可能容易在室溫下斷裂，且在晶圓層疊時，與晶圓之黏著特性可能會降低。
此外，若黏著膜包含流變改質劑，則其可包含考慮到黏著膜之搖變指數、流動性以及可內埋性而呈最佳含量形式之流變改質劑，且舉例而言，黏著膜可包含0.1重量%至15重量%之流變改質劑。然而，若黏著膜中流變改質劑之含量過量，則當製造塗佈溶液時，可能會產生微分散狀態，且黏著膜之黏度可快速增加以在很大程度上降低可內埋性。
若黏著膜包含無機填充劑及流變改質劑在一起，則黏著膜中無機填充劑及流變改質劑之重量之總和可為5重量%至50重量%。
同時，根據本發明之另一實施例，提供一種用於製造半導體元件之方法，包含使用上文所解釋之黏著膜固定第一半導體元件及第二半導體元件之步驟，所述第一半導體元件之面積與所述第二半導體元件之面積之比為0.65或小於0.65。
可經由在50℃至200℃之溫度下施加0.01兆帕至1.0兆帕之壓力且同時在第一半導體元件與第二半導體元件之間定位黏著膜之步驟來進行固定。
同時，製造半導體元件之方法可更包含經由導線接合方法或倒裝晶片法將第一半導體元件固定於黏著體上之步驟。
經由導線接合方法或倒裝晶片法將第一半導體元件固定於黏著體上之步驟的詳情如下。
用於接合第一半導體元件之材料可包含基板或引線框、其他半導體元件等。可使用先前已知的基板，諸如印刷電路板等作為基板。可使用金屬引線框，諸如Cu引線框、42合金引線框等；或包含玻璃環氧樹脂、雙順丁烯二醯亞胺-三嗪（bismaleimide-triazine；BT）、聚醯亞胺等之有機基板作為引線框。然而，用於接合第一半導體元件之材料不限於此，且可使用可藉由將半導體元件安裝在其上以與所述半導體元件電連接來使用的任何電路板而不加以特定限制。
可使用厚度為5微米至50微米之現有晶粒接合膜作為第一黏著膜。首先，使第一黏著膜附著至晶粒接合於黏著體上之第一半導體元件。其後，在預定條件下加熱呈半固化狀態之第一黏著膜，藉此熱固化第一黏著膜且將第一半導體元件固定在黏著體上。熱處理較佳在50℃至200℃之溫度及0.01兆帕至1.0兆帕之壓力下，且更佳在90℃至180℃之溫度及0.1兆帕至0.8兆帕之壓力下進行。熱處理較佳進行0.1小時至10小時，且更佳0.5小時至7小時。
第一導線接合方法為藉由接線使黏著體之端部之前端與第一半導體元件上之電極墊電連接的方法。舉例而言，使用金線、鋁線、銅線等作為接線。導線接合之溫度可為70℃至240℃，較佳為80℃至220℃。進行加熱持續數秒至數分鐘。藉由組合使用由超音波產生之振動能量與由所施加之壓力產生之壓力能量來連接導線，且同時加熱至上述的溫度範圍。
如內埋第一半導體元件之方法，使用於內埋之黏著膜的第二黏著膜附著至第二半導體元件，且晶粒接合於第一半導體元件上。在此過程中，第二黏著膜模製第一半導體元件，且同時在第一半導體元件之主要平面部分處與黏著體接觸。適當地，第二黏著膜之厚度為1微米至200微米，且更佳為10微米至180微米。若第二黏著膜之厚度過薄，則其可能不足以用於模製元件或其可能難以充分地保持機械特性。此外，若第二黏著膜之厚度過厚，則可能難以在固定第一半導體元件及第二半導體元件之過程中進行操控或其效率可能會降低。
熱處理較佳在50℃至200℃之溫度及0.01兆帕至1.0兆帕之壓力下，且更佳在90℃至180℃之溫度及0.1兆帕至0.8兆帕之壓力下進行。熱處理較佳進行0.1小時至10小時，且更佳0.5小時至7小時。
第二導線接合方法為藉由接線使黏著體之端部之前端與第二半導體元件上之電極墊電連接的方法。舉例而言，使用金線、鋁線、銅線等作為接線。導線接合之溫度可為70℃至240℃，較佳80℃至220℃。進行加熱持續數秒至數分鐘。藉由組合使用由超音波產生之振動能量與由所施加之壓力產生之壓力能量來連接導線，且同時加熱至上述的溫度範圍。
在第三固定處理中，將與第二半導體元件相同或與第二半導體元件不同之第三半導體元件固定於第二半導體元件上。使第三黏著膜附著至晶粒接合於第二半導體元件上之第三半導體元件，藉此對其進行固定。可以適當方式使用與第一固定處理中之第一黏著膜相同之黏著膜作為第三黏著膜。由於並不需要第三黏著膜來內埋其他半導體元件，因而其可以約3微米至60微米之薄厚度來使用。其後，可藉由製造封裝之常用方法來進行堆疊，由此需要堆疊多個層且導線接合。堆疊所需數目個半導體元件之後，可進行樹脂密封整個半導體元件之密封處理。
密封處理為一種用密封樹脂密封半導體元件之處理。進行此類密封處理以便保護半導體元件或安裝於黏著體上之接線，且舉例而言，藉由用模具模製密封樹脂來進行。舉例而言，使用環氧類樹脂作為密封樹脂。舉例而言，在進行樹脂密封時，加熱通常在175℃下進行60秒至90秒，但固化可在165℃至185℃下進行數分鐘。在此過程中，可在樹脂密封時進行加壓。在此情況下，加壓壓力較佳為1兆帕至15兆帕，更佳3兆帕至10兆帕。
密封處理之後，可進行後固化處理以對密封樹脂進行後固化。在密封處理中，未充分固化之密封樹脂可得到完全固化。儘管根據密封樹脂之類別，密封處理中之加熱溫度有所不同，但舉例而言，其處於165℃至185℃之範圍內，且加熱時間為約0.5小時至8小時。藉由經歷密封處理或後固化處理，可製造出半導體封裝。
半導體元件可藉由施用倒裝晶片作為另一第一半導體元件來製造，其藉由除用於導線接合的第一半導體元件之固定處理以外的同一方法來進行。在施用倒裝晶片之情況下，藉由倒裝晶片連接將第一半導體元件固定於黏著體上，且以所謂的面朝下方式安裝，其中第一半導體元件之電路側與黏著體對置。在第一半導體元件中，安裝多個突起電極，諸如凸塊等，且突起電極與黏著體上之電極連接。將底部填充材料填充在黏著體與第一半導體元件之間。
連接方法不受特定限制，且可使用先前已知的倒裝晶片接合器來進行連接。舉例而言，當使形成於第一半導體元件上之凸起電極，諸如凸塊等與黏著於黏著體之連接墊的接點之導電材料（焊料）接觸且加壓時，導電材料受到熔融，藉此確保第一半導體元件與黏著體之電連接，由此將第一半導體元件固定於黏著體上（倒裝晶片接合）。一般而言，在倒裝晶片連接時，加熱條件為240℃至300℃，且加壓條件為0.5牛頓至490牛頓。
用於形成凸塊作為凸起電極之材料不受特定限制，且舉例而言，可使用諸如錫-鉛類金屬材料、錫-銀類金屬材料、錫-銀-銅類金屬材料、錫-鋅類金屬材料、錫-鋅-鉍類金屬材料等之焊料（合金）或金類金屬材料、銅類金屬材料等。可使用先前已知的液態或膜成形底部填充材料作為底部填充材料。
如內埋第一半導體元件之方法，使用於內埋之黏著膜的第二黏著膜附著至第二半導體元件，且晶粒接合於第一半導體元件上。在此過程中，第二黏著膜模製第一半導體元件，且同時在第一半導體元件之主要平面部分處與黏著體接觸。由於第一半導體元件為倒裝晶片元件且不具有接線，模製所需之第二黏著膜的厚度可變得較低，且因此，適當地，第二黏著膜之厚度為1微米至200微米，且更佳為10微米至180微米。若第二黏著膜之厚度較低，則其可能不足以用於模製元件，且若其過厚，則可加工性可能會降低。堆疊第二半導體元件之後，進行熱處理以固定第二半導體元件以免在後續導線接合中移動。
熱處理較佳在50℃至200℃之溫度及0.01兆帕至1.0兆帕之壓力下，且更佳在90℃至180℃之溫度及0.1兆帕至0.8兆帕之壓力下進行。熱處理較佳進行0.1小時至10小時，且更佳進行0.5小時至7小時。
第二導線接合方法為藉由接線使黏著體之端部之前端與第二半導體元件上之電極墊電連接的方法。舉例而言，使用金線、鋁線、銅線等作為接線。導線接合之溫度可為70℃至240℃，且較佳為80℃至220℃。進行加熱持續數秒至數分鐘。藉由組合使用由超音波產生之振動能量與由所施加之壓力產生之壓力能量來連接導線，且同時加熱至上述的溫度範圍。
同時，在第三固定處理中，將與第二半導體元件相同或與第二半導體元件不同之第三半導體元件固定於第二半導體元件上。使第三黏著膜附著至晶粒接合於第二半導體元件上之第三半導體元件，藉此對其進行固定。可以適當方式使用與第一固定處理中之第一黏著膜相同之黏著膜作為第三黏著膜。由於並不需要第三黏著膜來內埋其他半導體元件，因而其可以約3微米至60微米之薄厚度來使用。其後，可藉由製造封裝之常用方法來進行堆疊，由此需要堆疊多個層且導線接合。堆疊所需數目個半導體元件之後，可進行以樹脂密封整個半導體元件之密封處理。
密封處理為一種用密封樹脂密封半導體元件之處理，且進行所述密封處理以便保護半導體元件或安裝於黏著體上之接線。舉例而言，藉由用模具模製密封樹脂來進行密封處理。舉例而言，使用環氧類樹脂作為密封樹脂。舉例而言，在進行樹脂密封時，加熱通常在175℃下進行60秒至90秒，但固化可在165℃至185℃下進行數分鐘。
在密封處理中，可在樹脂密封時進行加壓。在此情況下，加壓壓力較佳為1兆帕至15兆帕，且更佳為3兆帕至10兆帕。
密封處理之後，可進行後固化處理以對密封樹脂進行後固化。在後固化處理中，密封處理中未充分固化之密封樹脂得到完全固化。儘管根據密封樹脂之類別，後固化處理中之加熱溫度有所不同，但舉例而言，其處於165℃至185℃之範圍內，且加熱時間為約0.5小時至8小時。藉由經歷密封處理或後固化處理，可製造出半導體封裝。
根據本發明之又一實施例，提供一種半導體元件，其包含形成於黏著體上之第一半導體元件及經由上文所解釋之黏著膜接合至第一半導體元件之第二半導體元件，其中第一半導體元件之面積與第二半導體元件之面積之比為0.65或小於0.65。
黏著膜可內埋第一半導體元件。
可經由導線結合法或倒裝晶片法將第一半導體元件結合至黏著體。[ 有利效應 ]
根據本發明，提供一種半導體用黏著膜，其可較容易地內埋作為半導體控制元件之第一半導體元件，所述黏著膜可防止在內埋之後填角外流至第二半導體元件周圍以促進導線接合，可使第二半導體元件之彎曲降至最低以在第二半導體元件上容易地且穩定地建構多級堆疊，且可改良最終製造之半導體封裝的信號傳輸效率及速度；提供一種使用半導體用黏著膜製造半導體之方法；以及提供一種包含半導體用黏著膜的半導體元件。
藉由使用半導體用黏著膜，半導體控制元件可較容易地內埋於多堆疊半導體封裝中，最終製造之半導體封裝的信號傳輸效率及速度可得到改良，且包含第一半導體元件及第二半導體元件之多級堆疊封裝之結構可得到較為穩定地維持。
將藉助於以下實例較詳細地解釋本發明之實施例。然而，此等實例僅提供用於說明本發明，且不應視為限制本發明。[ 製造實例 ： 熱塑性丙烯酸酯樹脂之製造 ]
將100公克甲苯與40公克丙烯酸丁酯、60公克丙烯酸乙酯、15公克丙烯腈以及10公克甲基丙烯酸縮水甘油酯（glycidyl methacrylate）混合，且在80℃下使混合物反應約12小時以合成丙烯酸酯類樹脂，其中引入縮水甘油基作為分支鏈（重量平均分子量為約700,000，玻璃轉化溫度為10℃）。[ 實例 1 至 實例 5 以及 比較實例 1 至 比較實例 3 ： 半導體用黏著樹脂組成物及半導體用黏著膜的製造 ] 實例 1 （ 1 ） 半導體用黏著樹脂組成物之溶液之製造
將50公克苯酚樹脂KH-6021（由大日本油墨化學工業公司（DIC Corporation）生產，雙酚A酚醛清漆樹脂，羥基當量121公克/當量，軟化點：133℃）（其為環氧樹脂固化劑）、38公克環氧樹脂EOCN-104S（由日本化藥有限公司（Nippon Kayaku Co., Ltd.）生產，甲酚酚醛清漆型環氧樹脂，環氧當量214公克/當量，軟化點：92℃）、50公克液態環氧樹脂RE-310S（由日本化藥有限公司生產，雙酚A環氧樹脂，環氧當量180公克/當量）、40公克製造實例中所獲得之熱塑性丙烯酸酯樹脂、5公克矽烷偶合劑A-187（GE東芝有機矽公司（GE Toshiba Silicone），γ-縮水甘油氧基丙基三甲氧基矽烷）、0.1公克固化促進劑2PZ（四國化學品公司（Shikoku Chemicals Corporation），2-苯基咪唑）以及100公克填充劑SC-2050（雅都瑪公司（Admatec Corporation），球形二氧化矽，平均粒徑約400奈米）在甲基乙基酮溶劑中混合以獲得半導體用黏著組成物之溶液（固體含量40重量%）。（ 2 ） 半導體用黏著膜之製造
將以上製造的半導體用黏著組成物之溶液塗佈於離型處理之聚對苯二甲酸伸乙酯膜（厚度38微米）上，且隨後在110℃下乾燥3分鐘以獲得厚度為約110微米的半導體用黏著膜。（ 3 ） 半導體元件之製造
製造厚度為20微米的具有實例1之組成物的黏著膜，且將其用作第一半導體元件之黏著膜。在70℃之條件下，使其附著至厚度為50微米且單側長度為4毫米之四邊形第一半導體元件。黏著膜所附著之第一半導體元件黏著於BGA基板。此時，溫度條件為125℃且壓力條件為每秒1千克。用乾燥器將第一半導體元件所附著之BGA基板加熱至125℃持續1小時，由此熱固化黏著膜。隨後，使用導線接合器（新川有限公司（Shinkawa Co., Ltd.），產品名稱「UTC-1000」），在150℃之條件下以100微米間距進行23微米電流導線與控制器晶片之導線接合。
隨後，在70℃之溫度條件下使實例與比較實例中所製造之各黏著膜附著至單側長度為8.8毫米且厚度為80微米之四邊形半導體晶片，使黏著膜所附著之第二半導體元件附著至第一半導體元件及BGA基板，由此內埋第一半導體元件。此時，溫度條件為110℃且壓力條件為每秒2千克。實例 2 至實例 5
除施用下表1中所述之組分及量以外，藉由與實例1相同之方法獲得半導體用黏著樹脂組成物之溶液（固體含量40重量%）及厚度為110微米之半導體用黏著膜。比較實例 1 及比較實例 2
除施用下表1中所述之組分及量以外，藉由與實例1相同之方法獲得半導體用黏著樹脂組成物之溶液（固體含量40重量%）及厚度為110微米之半導體用黏著膜。比較實例 3
除使用單側長度為7.5毫米且厚度為50微米之四邊形第一半導體元件以外，藉由與實例1相同之方法，施用實例1之組分及量獲得半導體用黏著樹脂組成物之溶液（固體含量40重量%）及厚度為110微米之半導體用黏著膜。 [表1]實例及比較實例之樹脂組成物之組成[單位：公克] R-972（贏創工業，煙霧狀二氧化矽，平均粒徑17奈米） KPH-F3075（科隆化學有限公司（Kolon Chemical Co., Ltd.），羥基當量：175 公克/當量，軟化點：75℃） GPH-65（日本化藥有限公司，羥基當量198公克/當量，軟化點：65℃）[ 實驗實例 ： 半導體用黏著膜之特性的 評估 ] 實驗實例 1 ： 量測熔融黏度
將分別在實例與比較實例中獲得之黏著膜堆疊至660微米之厚度，且隨後在60℃下使用輥層壓機進行層壓。其後，使各試樣形成呈直徑為8毫米之環形形狀，且隨後根據溫度在5弧度/秒之剪切速率及20℃/分鐘之溫度上升速率下使用TA公司之高級流變擴展系統（advanced rheometric expansion system；ARES）量測熔融黏度。實驗實例 2 ： 量測第二黏著層之第一半導體元件模製特性
如半導體元件之製造實例中所述，在135℃、1小時以及7個標準大氣壓之條件下用壓力乾燥器對第二半導體元件所附著之BGA基板進行加熱，以熱固化黏著膜，由此製造出半導體元件。切割所製造之半導體元件，用光學顯微鏡（200×放大倍數）觀測切割面，且若第一半導體元件經很好內埋而其周圍無空隙，則將其解釋且評估為「○」，且若觀測到第一半導體元件周圍存在空隙，則將其解釋且評估為「×」。實驗實例 3 ：量測接線模製特性
如實驗實例2中所述來製造半導體元件之後，使用X射線檢測裝置測定接線是否受損。若半導體元件內之接線以規律間隔隔開，則將其解釋且評估為良好「○」，且若存在任何接線彼此重疊而產生短路，則將其解釋且評估為有故障的「×」。實驗實例 4 ： 量測填角量
如實驗實例2中所述來製造半導體元件之後，量測已外流至第二半導體元件之周圍的黏著劑之量，量測每個元件之最長外流長度，且若長度在200微米內，則將其解釋且評估為良好「○」，且若長度超出200微米，則將其解釋且評估為有故障的「×」。 [表2]實驗實例之結果
如表2中所示，證實在使用在110℃下之搖變指數為1.5至7.5的實例1至實例5之半導體元件用黏著膜固定第一半導體元件及第二半導體元件（第一半導體元件之面積與第二半導體元件之面積之比為0.65或小於0.65）之情況下，作為半導體控制元件之第一半導體元件可較容易地得到內埋，且在內埋之後，第二半導體元件之彎曲可降至最低，由此促進在第二半導體元件上建構多級堆疊。
在使用實例1至實例5之半導體元件用黏著膜之情況下，可防止黏著劑在固化溫度下在第二半導體晶片中流動或可防止黏著劑外流至半導體元件周圍且可防止形成填角。
相反地，在於110℃下之搖變指數大於7.5的比較實例1之黏著膜中，內埋第一半導體元件之效能較低且接線彼此重疊而產生短路，且在於110℃下之搖變指數小於1.5的比較實例2之黏著膜中，黏著劑過度外流至第二半導體元件之周圍而形成填角。
在第一半導體元件之面積與第二半導體元件之面積之比大於0.65的比較實例3之半導體元件的製造方法中，在內埋第一半導體元件之過程期間，空隙產生或黏著劑過度外流至第二半導體元件周圍而形成填角。
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Claims (21)

  1. 一種黏著膜，所述黏著膜在110℃下的搖變指數為1.5至7.5，其中所述黏著膜用於固定第一半導體元件及第二半導體元件，所述第一半導體元件之面積與所述第二半導體元件之面積之比為0.65或小於0.65。
  2. 如申請專利範圍第1項所述的黏著膜，其中所述搖變指數為在0.5弧度/秒之剪切速率及110℃之溫度下的所述黏著膜之熔融黏度與在5弧度/秒之剪切速率及110℃之溫度下的所述黏著膜之熔融黏度之比。
  3. 如申請專利範圍第1項所述的黏著膜，其中所述黏著膜在110℃下之所述搖變指數為3至7。
  4. 如申請專利範圍第1項所述的黏著膜，其中所述黏著膜在5弧度/秒之剪切速率及110℃之溫度下的熔融黏度為500帕▪秒至10,000帕▪秒。
  5. 如申請專利範圍第1項所述的黏著膜，其中所述黏著膜之厚度為1微米至200微米。
  6. 如申請專利範圍第1項所述的黏著膜，其中所述黏著膜包括： 玻璃轉化溫度為-10℃至30℃之熱塑性樹脂； 環氧樹脂；以及 包括苯酚樹脂之固化劑。
  7. 如申請專利範圍第6項所述的黏著膜，其中所述熱塑性樹脂包含(甲基)丙烯酸酯類樹脂，所述(甲基)丙烯酸酯類樹脂包括含環氧基類官能基之(甲基)丙烯酸酯類重複單元。
  8. 如申請專利範圍第7項所述的黏著膜，其中所述(甲基)丙烯酸酯類樹脂包括0.1重量%至25重量%之含環氧基類官能基之(甲基)丙烯酸酯類重複單元。
  9. 如申請專利範圍第6項所述的黏著膜，其中所述環氧樹脂包含固態環氧樹脂及液態環氧樹脂。
  10. 如申請專利範圍第9項所述的黏著膜，其中所述液態環氧樹脂在25℃下之黏度為500毫帕·秒至20,000毫帕·秒。
  11. 如申請專利範圍第9項所述的黏著膜，其中所述液態環氧樹脂與所述苯酚樹脂之重量比為0.3至1.5。
  12. 如申請專利範圍第6項所述的黏著膜，其中所述苯酚樹脂之軟化點為50℃或大於50℃。
  13. 如申請專利範圍第6項所述的黏著膜，其中所述黏著膜更包括由無機填充劑及流變改質劑所構成的族群中選出之一或多者。
  14. 如申請專利範圍第13項所述的黏著膜，其中所述流變改質劑包括由以下各者所構成的族群中選出之一或多種化合物：直徑小於100微米之二氧化矽、膨潤土類化合物、可微沈降之碳酸鈣、有機膨潤土類化合物、經表面處理之碳酸鈣化合物、金屬皂類化合物、氫化蓖麻油、聚醯胺蠟、聚氧化乙烯化合物、植物油、聚合油、聚合亞麻籽油以及脂肪酸二聚體。
  15. 如申請專利範圍第13項所述的黏著膜，其中所述無機填充劑包括由以下各者所構成的族群中選出之一或多種化合物：直徑小於100微米之二氧化矽、氧化鋁、硫酸鋇、氫氧化鎂、碳酸鎂、矽酸鎂、氧化鎂、矽酸鈣、碳酸鈣、氧化鈣、氧化鋁、氫氧化鋁、氮化鋁、硼酸鋁晶鬚、鋯類化合物及銻類化合物以及鉍類化合物。
  16. 如申請專利範圍第13項所述的黏著膜，其中所述黏著膜包括10重量%至50重量%之無機填充劑或0.1重量%至15重量%之流變改質劑。
  17. 一種半導體元件之製造方法，包括使用如申請專利範圍第1項至第16項中任一項所述的黏著膜固定第一半導體元件及第二半導體元件之步驟，所述第一半導體元件之面積與所述第二半導體元件之面積之比為0.65或小於0.65。
  18. 如申請專利範圍第17項所述的半導體元件之製造方法，其中經由在50℃至200℃之溫度下施加0.01兆帕至1.0兆帕之壓力且同時在所述第一半導體元件與所述第二半導體元件之間定位所述黏著膜之步驟來進行所述固定。
  19. 如申請專利範圍第17項所述的半導體元件之製造方法，更包括經由導線接合法或倒裝晶片法將所述半導體元件固定於黏著體上之步驟。
  20. 一種半導體元件，包括： 第一半導體元件，形成於黏著體上；以及 第二半導體元件，經由如申請專利範圍第1項所述的黏著膜接合至所述第一半導體元件， 其中所述第一半導體元件之面積與所述第二半導體元件之面積之比為0.65或小於0.65。
  21. 如申請專利範圍第20項所述的半導體元件，其中所述黏著膜內埋所述第一半導體元件，且 所述第一半導體元件經由導線接合法或倒裝晶片法接合至所述黏著體。
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CN107534020A (zh) 2018-01-02

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