CN116784020A - 压电元件、压电装置及压电元件的制造方法 - Google Patents

压电元件、压电装置及压电元件的制造方法 Download PDF

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Publication number
CN116784020A
CN116784020A CN202280012733.XA CN202280012733A CN116784020A CN 116784020 A CN116784020 A CN 116784020A CN 202280012733 A CN202280012733 A CN 202280012733A CN 116784020 A CN116784020 A CN 116784020A
Authority
CN
China
Prior art keywords
region
piezoelectric element
film
vibration
slit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280012733.XA
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English (en)
Chinese (zh)
Inventor
酒井峰一
马渡和明
小山友二
田中昌明
城森知也
清水悠平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of CN116784020A publication Critical patent/CN116784020A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/308—Membrane type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H04R17/02—Microphones
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Details Of Audible-Bandwidth Transducers (AREA)
CN202280012733.XA 2021-02-03 2022-02-01 压电元件、压电装置及压电元件的制造方法 Pending CN116784020A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-016148 2021-02-03
JP2021016148A JP7528804B2 (ja) 2021-02-03 2021-02-03 圧電素子、圧電装置、および圧電素子の製造方法
PCT/JP2022/003806 WO2022168826A1 (ja) 2021-02-03 2022-02-01 圧電素子、圧電装置、および圧電素子の製造方法

Publications (1)

Publication Number Publication Date
CN116784020A true CN116784020A (zh) 2023-09-19

Family

ID=82741457

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280012733.XA Pending CN116784020A (zh) 2021-02-03 2022-02-01 压电元件、压电装置及压电元件的制造方法

Country Status (5)

Country Link
US (1) US20230363280A1 (https=)
JP (2) JP7528804B2 (https=)
CN (1) CN116784020A (https=)
DE (1) DE112022000948T5 (https=)
WO (1) WO2022168826A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12513467B2 (en) * 2021-12-09 2025-12-30 Skyworks Solutions, Inc. Acoustic resistance improvement in piezoelectric microelectromechanical system microphone using compliant joint
US12549906B2 (en) * 2022-03-31 2026-02-10 Skyworks Solutions, Inc. MEMS sensor with two compliances
CN119183056B (zh) * 2024-11-25 2025-07-22 成都纤声科技有限公司 一种压电mems麦克风及其制备方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100000U (ja) * 1981-12-26 1983-07-07 クラウン株式会社 音響変換装置
DE69827767T2 (de) 1997-09-08 2006-03-02 Ngk Insulator, Ltd. Gewichtssensor und verfahren zur bestimmung der masse
JP2003207729A (ja) 2002-01-16 2003-07-25 Ricoh Co Ltd 形状可変鏡の製造方法及び光ディスク情報入出力装置
WO2005050836A1 (ja) * 2003-11-19 2005-06-02 Murata Manufacturing Co., Ltd. 端面反射型弾性表面波装置及びその製造方法
JP4691395B2 (ja) * 2005-05-30 2011-06-01 株式会社日立メディアエレクトロニクス バルク弾性波共振器、バルク弾性波共振器を用いたフィルタ、それを用いた高周波モジュール、並びにバルク弾性波共振器を用いた発振器
JP5250899B2 (ja) 2007-10-16 2013-07-31 船井電機株式会社 携帯電話およびマイクロホンユニット
JP5491080B2 (ja) 2009-06-18 2014-05-14 国立大学法人 東京大学 マイクロフォン
WO2013002847A1 (en) 2011-03-31 2013-01-03 Bakr-Calling, Inc. Acoustic transducer with gap-controlling geometry and method of manufacturing an acoustic transducer
JP6908322B2 (ja) 2016-09-06 2021-07-21 新日本無線株式会社 圧電素子
JP6894719B2 (ja) * 2017-02-21 2021-06-30 新日本無線株式会社 圧電素子
JP2019114958A (ja) 2017-12-25 2019-07-11 第一精工株式会社 電気音響変換器
JP2019161030A (ja) 2018-03-14 2019-09-19 新日本無線株式会社 圧電素子
JP7088314B2 (ja) 2018-12-10 2022-06-21 株式会社村田製作所 圧電トランスデューサ
JP7176678B2 (ja) 2019-02-15 2022-11-22 日清紡マイクロデバイス株式会社 圧電素子
JP2020178109A (ja) 2019-04-23 2020-10-29 新日本無線株式会社 圧電素子
JP7251618B2 (ja) * 2019-05-16 2023-04-04 株式会社村田製作所 圧電デバイスおよび超音波トランスデューサ
JP2021016148A (ja) 2019-07-15 2021-02-12 シャープ株式会社 走査アンテナおよび走査アンテナの製造方法
WO2021095311A1 (ja) 2019-11-13 2021-05-20 株式会社村田製作所 トランスデューサ

Also Published As

Publication number Publication date
JP2024133375A (ja) 2024-10-01
JP2022119126A (ja) 2022-08-16
US20230363280A1 (en) 2023-11-09
JP7528804B2 (ja) 2024-08-06
JP7772148B2 (ja) 2025-11-18
DE112022000948T5 (de) 2023-11-30
WO2022168826A1 (ja) 2022-08-11

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