JP7528804B2 - 圧電素子、圧電装置、および圧電素子の製造方法 - Google Patents

圧電素子、圧電装置、および圧電素子の製造方法 Download PDF

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Publication number
JP7528804B2
JP7528804B2 JP2021016148A JP2021016148A JP7528804B2 JP 7528804 B2 JP7528804 B2 JP 7528804B2 JP 2021016148 A JP2021016148 A JP 2021016148A JP 2021016148 A JP2021016148 A JP 2021016148A JP 7528804 B2 JP7528804 B2 JP 7528804B2
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Japan
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region
support
vibration
piezoelectric
piezoelectric element
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JP2021016148A
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Japanese (ja)
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JP2022119126A (ja
JP2022119126A5 (https=
Inventor
峰一 酒井
和明 馬渡
友二 小山
昌明 田中
知也 城森
悠平 清水
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Denso Corp
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Denso Corp
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Priority to JP2021016148A priority Critical patent/JP7528804B2/ja
Priority to DE112022000948.9T priority patent/DE112022000948T5/de
Priority to PCT/JP2022/003806 priority patent/WO2022168826A1/ja
Priority to CN202280012733.XA priority patent/CN116784020A/zh
Publication of JP2022119126A publication Critical patent/JP2022119126A/ja
Publication of JP2022119126A5 publication Critical patent/JP2022119126A5/ja
Priority to US18/356,487 priority patent/US20230363280A1/en
Priority to JP2024117752A priority patent/JP7772148B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/308—Membrane type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H04R17/02—Microphones
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Details Of Audible-Bandwidth Transducers (AREA)
JP2021016148A 2021-02-03 2021-02-03 圧電素子、圧電装置、および圧電素子の製造方法 Active JP7528804B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2021016148A JP7528804B2 (ja) 2021-02-03 2021-02-03 圧電素子、圧電装置、および圧電素子の製造方法
DE112022000948.9T DE112022000948T5 (de) 2021-02-03 2022-02-01 Piezoelektrisches element, piezoelektrische vorrichtung und verfahren zum herstellen eines piezoelektrischen elements
PCT/JP2022/003806 WO2022168826A1 (ja) 2021-02-03 2022-02-01 圧電素子、圧電装置、および圧電素子の製造方法
CN202280012733.XA CN116784020A (zh) 2021-02-03 2022-02-01 压电元件、压电装置及压电元件的制造方法
US18/356,487 US20230363280A1 (en) 2021-02-03 2023-07-21 Piezoelectric element, piezoelectric device, and method for manufacturing piezoelectric element
JP2024117752A JP7772148B2 (ja) 2021-02-03 2024-07-23 圧電素子、圧電装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021016148A JP7528804B2 (ja) 2021-02-03 2021-02-03 圧電素子、圧電装置、および圧電素子の製造方法

Related Child Applications (1)

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JP2024117752A Division JP7772148B2 (ja) 2021-02-03 2024-07-23 圧電素子、圧電装置

Publications (3)

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JP2022119126A JP2022119126A (ja) 2022-08-16
JP2022119126A5 JP2022119126A5 (https=) 2023-01-06
JP7528804B2 true JP7528804B2 (ja) 2024-08-06

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JP2021016148A Active JP7528804B2 (ja) 2021-02-03 2021-02-03 圧電素子、圧電装置、および圧電素子の製造方法
JP2024117752A Active JP7772148B2 (ja) 2021-02-03 2024-07-23 圧電素子、圧電装置

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US (1) US20230363280A1 (https=)
JP (2) JP7528804B2 (https=)
CN (1) CN116784020A (https=)
DE (1) DE112022000948T5 (https=)
WO (1) WO2022168826A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12513467B2 (en) * 2021-12-09 2025-12-30 Skyworks Solutions, Inc. Acoustic resistance improvement in piezoelectric microelectromechanical system microphone using compliant joint
US12549906B2 (en) * 2022-03-31 2026-02-10 Skyworks Solutions, Inc. MEMS sensor with two compliances
CN119183056B (zh) * 2024-11-25 2025-07-22 成都纤声科技有限公司 一种压电mems麦克风及其制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000162518A (ja) 1997-09-08 2000-06-16 Ngk Insulators Ltd 圧電／電歪デバイス
JP2009100178A (ja) 2007-10-16 2009-05-07 Funai Electric Co Ltd 携帯電話およびマイクロホンユニット
JP2011004129A (ja) 2009-06-18 2011-01-06 Univ Of Tokyo マイクロフォン
JP2018041788A (ja) 2016-09-06 2018-03-15 新日本無線株式会社 圧電素子
JP2019114958A (ja) 2017-12-25 2019-07-11 第一精工株式会社 電気音響変換器
WO2020121609A1 (ja) 2018-12-10 2020-06-18 株式会社村田製作所 圧電トランスデューサ
JP2020178109A (ja) 2019-04-23 2020-10-29 新日本無線株式会社 圧電素子
WO2021095311A1 (ja) 2019-11-13 2021-05-20 株式会社村田製作所 トランスデューサ

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100000U (ja) * 1981-12-26 1983-07-07 クラウン株式会社 音響変換装置
JP2003207729A (ja) 2002-01-16 2003-07-25 Ricoh Co Ltd 形状可変鏡の製造方法及び光ディスク情報入出力装置
WO2005050836A1 (ja) * 2003-11-19 2005-06-02 Murata Manufacturing Co., Ltd. 端面反射型弾性表面波装置及びその製造方法
JP4691395B2 (ja) * 2005-05-30 2011-06-01 株式会社日立メディアエレクトロニクス バルク弾性波共振器、バルク弾性波共振器を用いたフィルタ、それを用いた高周波モジュール、並びにバルク弾性波共振器を用いた発振器
WO2013002847A1 (en) 2011-03-31 2013-01-03 Bakr-Calling, Inc. Acoustic transducer with gap-controlling geometry and method of manufacturing an acoustic transducer
JP6894719B2 (ja) * 2017-02-21 2021-06-30 新日本無線株式会社 圧電素子
JP2019161030A (ja) 2018-03-14 2019-09-19 新日本無線株式会社 圧電素子
JP7176678B2 (ja) 2019-02-15 2022-11-22 日清紡マイクロデバイス株式会社 圧電素子
JP7251618B2 (ja) * 2019-05-16 2023-04-04 株式会社村田製作所 圧電デバイスおよび超音波トランスデューサ
JP2021016148A (ja) 2019-07-15 2021-02-12 シャープ株式会社 走査アンテナおよび走査アンテナの製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000162518A (ja) 1997-09-08 2000-06-16 Ngk Insulators Ltd 圧電／電歪デバイス
JP2009100178A (ja) 2007-10-16 2009-05-07 Funai Electric Co Ltd 携帯電話およびマイクロホンユニット
JP2011004129A (ja) 2009-06-18 2011-01-06 Univ Of Tokyo マイクロフォン
JP2018041788A (ja) 2016-09-06 2018-03-15 新日本無線株式会社 圧電素子
JP2019114958A (ja) 2017-12-25 2019-07-11 第一精工株式会社 電気音響変換器
WO2020121609A1 (ja) 2018-12-10 2020-06-18 株式会社村田製作所 圧電トランスデューサ
JP2020178109A (ja) 2019-04-23 2020-10-29 新日本無線株式会社 圧電素子
WO2021095311A1 (ja) 2019-11-13 2021-05-20 株式会社村田製作所 トランスデューサ

Also Published As

Publication number Publication date
JP2024133375A (ja) 2024-10-01
JP2022119126A (ja) 2022-08-16
US20230363280A1 (en) 2023-11-09
JP7772148B2 (ja) 2025-11-18
DE112022000948T5 (de) 2023-11-30
WO2022168826A1 (ja) 2022-08-11
CN116784020A (zh) 2023-09-19

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