CN116636018A - 固态成像装置 - Google Patents

固态成像装置 Download PDF

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Publication number
CN116636018A
CN116636018A CN202180089231.2A CN202180089231A CN116636018A CN 116636018 A CN116636018 A CN 116636018A CN 202180089231 A CN202180089231 A CN 202180089231A CN 116636018 A CN116636018 A CN 116636018A
Authority
CN
China
Prior art keywords
light
pixel
film
imaging device
state imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN202180089231.2A
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English (en)
Chinese (zh)
Inventor
纳土晋一郎
山崎知洋
蛯子芳树
横川创造
荻田知治
松谷弘康
守屋雄介
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN116636018A publication Critical patent/CN116636018A/zh
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Solid State Image Pick-Up Elements (AREA)
CN202180089231.2A 2021-01-13 2021-08-13 固态成像装置 Withdrawn CN116636018A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021003801 2021-01-13
JP2021-003801 2021-01-13
PCT/JP2021/029828 WO2022153583A1 (ja) 2021-01-13 2021-08-13 固体撮像装置

Publications (1)

Publication Number Publication Date
CN116636018A true CN116636018A (zh) 2023-08-22

Family

ID=82447090

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180089231.2A Withdrawn CN116636018A (zh) 2021-01-13 2021-08-13 固态成像装置

Country Status (5)

Country Link
US (1) US20240055456A1 (https=)
JP (1) JPWO2022153583A1 (https=)
CN (1) CN116636018A (https=)
DE (1) DE112021006798T5 (https=)
WO (1) WO2022153583A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115881738A (zh) * 2021-09-26 2023-03-31 群创光电股份有限公司 光学感测装置
US20230317758A1 (en) * 2022-04-04 2023-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation structures in image sensors
KR20240142767A (ko) * 2023-03-22 2024-10-02 에스케이하이닉스 주식회사 이미지 센싱 장치
JP2024164446A (ja) * 2023-05-15 2024-11-27 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器
WO2025154188A1 (ja) * 2024-01-17 2025-07-24 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2025225686A1 (ja) * 2024-04-25 2025-10-30 ソニーセミコンダクタソリューションズ株式会社 光検出装置

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JPH02244761A (ja) * 1989-03-17 1990-09-28 Matsushita Electron Corp 固体撮像素子およびその製造方法
JPH0414257A (ja) * 1990-05-07 1992-01-20 Matsushita Electron Corp 固体撮像装置
JPH0521768A (ja) * 1991-07-15 1993-01-29 Sharp Corp 固体撮像素子
JP2774006B2 (ja) * 1991-12-25 1998-07-09 三菱電機株式会社 半導体受光装置及びその製造方法
JPH06140612A (ja) * 1992-10-28 1994-05-20 Mitsubishi Electric Corp 撮像素子及び撮像装置
JPH09232552A (ja) * 1996-02-27 1997-09-05 Sony Corp 固体撮像素子
JP2002314057A (ja) * 2001-04-16 2002-10-25 Canon Inc 固体撮像装置の製造方法及び固体撮像システム
EP1453097A4 (en) * 2001-11-05 2008-01-23 Zycube Co Ltd TUBE-FREE IMAGE SENSOR AND METHOD FOR THE PRODUCTION THEREOF
JP2006229004A (ja) * 2005-02-18 2006-08-31 Sony Corp 固体撮像素子
JP2007053183A (ja) * 2005-08-17 2007-03-01 Fujifilm Corp 固体撮像素子
JP2008091771A (ja) * 2006-10-04 2008-04-17 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP4525671B2 (ja) 2006-12-08 2010-08-18 ソニー株式会社 固体撮像装置
JP5066377B2 (ja) * 2007-03-07 2012-11-07 富士フイルム株式会社 撮影装置
JP2009188316A (ja) * 2008-02-08 2009-08-20 Denso Corp 受光素子
JP2010197821A (ja) * 2009-02-26 2010-09-09 Sony Corp レンズの製造方法
JP5794068B2 (ja) * 2011-09-16 2015-10-14 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
JP5660226B2 (ja) * 2012-12-27 2015-01-28 凸版印刷株式会社 液晶表示装置、カラーフィルタ基板、及びカラーフィルタ基板製造方法
JP2016001633A (ja) * 2014-06-11 2016-01-07 ソニー株式会社 固体撮像素子、および電子装置
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CN111985431B (zh) * 2020-08-27 2024-08-13 深圳市汇顶科技股份有限公司 指纹识别装置和电子设备

Also Published As

Publication number Publication date
DE112021006798T5 (de) 2023-11-30
JPWO2022153583A1 (https=) 2022-07-21
WO2022153583A1 (ja) 2022-07-21
US20240055456A1 (en) 2024-02-15

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