JPWO2022153583A1 - - Google Patents
Info
- Publication number
- JPWO2022153583A1 JPWO2022153583A1 JP2022575064A JP2022575064A JPWO2022153583A1 JP WO2022153583 A1 JPWO2022153583 A1 JP WO2022153583A1 JP 2022575064 A JP2022575064 A JP 2022575064A JP 2022575064 A JP2022575064 A JP 2022575064A JP WO2022153583 A1 JPWO2022153583 A1 JP WO2022153583A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021003801 | 2021-01-13 | ||
| PCT/JP2021/029828 WO2022153583A1 (ja) | 2021-01-13 | 2021-08-13 | 固体撮像装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022153583A1 true JPWO2022153583A1 (https=) | 2022-07-21 |
Family
ID=82447090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022575064A Pending JPWO2022153583A1 (https=) | 2021-01-13 | 2021-08-13 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240055456A1 (https=) |
| JP (1) | JPWO2022153583A1 (https=) |
| CN (1) | CN116636018A (https=) |
| DE (1) | DE112021006798T5 (https=) |
| WO (1) | WO2022153583A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115881738A (zh) * | 2021-09-26 | 2023-03-31 | 群创光电股份有限公司 | 光学感测装置 |
| US20230317758A1 (en) * | 2022-04-04 | 2023-10-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Isolation structures in image sensors |
| KR20240142767A (ko) * | 2023-03-22 | 2024-10-02 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
| JP2024164446A (ja) * | 2023-05-15 | 2024-11-27 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置および電子機器 |
| WO2025154188A1 (ja) * | 2024-01-17 | 2025-07-24 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置 |
| WO2025225686A1 (ja) * | 2024-04-25 | 2025-10-30 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置 |
Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02244761A (ja) * | 1989-03-17 | 1990-09-28 | Matsushita Electron Corp | 固体撮像素子およびその製造方法 |
| JPH0414257A (ja) * | 1990-05-07 | 1992-01-20 | Matsushita Electron Corp | 固体撮像装置 |
| JPH0521768A (ja) * | 1991-07-15 | 1993-01-29 | Sharp Corp | 固体撮像素子 |
| JPH05175539A (ja) * | 1991-12-25 | 1993-07-13 | Mitsubishi Electric Corp | 半導体受光装置及びその製造方法 |
| JPH06140612A (ja) * | 1992-10-28 | 1994-05-20 | Mitsubishi Electric Corp | 撮像素子及び撮像装置 |
| JPH09232552A (ja) * | 1996-02-27 | 1997-09-05 | Sony Corp | 固体撮像素子 |
| JP2002314057A (ja) * | 2001-04-16 | 2002-10-25 | Canon Inc | 固体撮像装置の製造方法及び固体撮像システム |
| JP2006229004A (ja) * | 2005-02-18 | 2006-08-31 | Sony Corp | 固体撮像素子 |
| JP2007053183A (ja) * | 2005-08-17 | 2007-03-01 | Fujifilm Corp | 固体撮像素子 |
| JP2008091771A (ja) * | 2006-10-04 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
| JP2008218851A (ja) * | 2007-03-07 | 2008-09-18 | Fujifilm Corp | 撮影装置 |
| JP2009188316A (ja) * | 2008-02-08 | 2009-08-20 | Denso Corp | 受光素子 |
| JP2010197821A (ja) * | 2009-02-26 | 2010-09-09 | Sony Corp | レンズの製造方法 |
| JP2012186477A (ja) * | 2001-11-05 | 2012-09-27 | Kamiyacho Ip Holdings | 固体イメージセンサおよびその製造方法 |
| JP2013065688A (ja) * | 2011-09-16 | 2013-04-11 | Sony Corp | 固体撮像素子および製造方法、並びに電子機器 |
| JP2016001633A (ja) * | 2014-06-11 | 2016-01-07 | ソニー株式会社 | 固体撮像素子、および電子装置 |
| US20180006072A1 (en) * | 2016-06-30 | 2018-01-04 | Stmicroelectronics (Crolles 2) Sas | Backside illuminated photosensor element with light pipe and light mirror structures |
| WO2018079296A1 (ja) * | 2016-10-27 | 2018-05-03 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及び電子機器 |
| US10367023B1 (en) * | 2018-06-12 | 2019-07-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor image sensor |
| JP2019128509A (ja) * | 2018-01-26 | 2019-08-01 | 大日本印刷株式会社 | レンズシートユニット、レンズシートユニットの製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4525671B2 (ja) | 2006-12-08 | 2010-08-18 | ソニー株式会社 | 固体撮像装置 |
| JP5660226B2 (ja) * | 2012-12-27 | 2015-01-28 | 凸版印刷株式会社 | 液晶表示装置、カラーフィルタ基板、及びカラーフィルタ基板製造方法 |
| US9543347B2 (en) * | 2015-02-24 | 2017-01-10 | Optiz, Inc. | Stress released image sensor package structure and method |
| US11081602B2 (en) * | 2017-11-27 | 2021-08-03 | Mitsubishi Electric Corporation | Optical semiconductor device |
| JP2019114642A (ja) | 2017-12-22 | 2019-07-11 | キヤノン株式会社 | 固体撮像装置、電子機器および輸送機器 |
| JP2019180048A (ja) | 2018-03-30 | 2019-10-17 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
| JP2021168316A (ja) | 2018-07-13 | 2021-10-21 | ソニーセミコンダクタソリューションズ株式会社 | センサ素子および電子機器 |
| CN111985431B (zh) * | 2020-08-27 | 2024-08-13 | 深圳市汇顶科技股份有限公司 | 指纹识别装置和电子设备 |
-
2021
- 2021-08-13 JP JP2022575064A patent/JPWO2022153583A1/ja active Pending
- 2021-08-13 WO PCT/JP2021/029828 patent/WO2022153583A1/ja not_active Ceased
- 2021-08-13 DE DE112021006798.2T patent/DE112021006798T5/de not_active Withdrawn
- 2021-08-13 US US18/260,491 patent/US20240055456A1/en active Pending
- 2021-08-13 CN CN202180089231.2A patent/CN116636018A/zh not_active Withdrawn
Patent Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02244761A (ja) * | 1989-03-17 | 1990-09-28 | Matsushita Electron Corp | 固体撮像素子およびその製造方法 |
| JPH0414257A (ja) * | 1990-05-07 | 1992-01-20 | Matsushita Electron Corp | 固体撮像装置 |
| JPH0521768A (ja) * | 1991-07-15 | 1993-01-29 | Sharp Corp | 固体撮像素子 |
| JPH05175539A (ja) * | 1991-12-25 | 1993-07-13 | Mitsubishi Electric Corp | 半導体受光装置及びその製造方法 |
| JPH06140612A (ja) * | 1992-10-28 | 1994-05-20 | Mitsubishi Electric Corp | 撮像素子及び撮像装置 |
| JPH09232552A (ja) * | 1996-02-27 | 1997-09-05 | Sony Corp | 固体撮像素子 |
| JP2002314057A (ja) * | 2001-04-16 | 2002-10-25 | Canon Inc | 固体撮像装置の製造方法及び固体撮像システム |
| JP2012186477A (ja) * | 2001-11-05 | 2012-09-27 | Kamiyacho Ip Holdings | 固体イメージセンサおよびその製造方法 |
| JP2006229004A (ja) * | 2005-02-18 | 2006-08-31 | Sony Corp | 固体撮像素子 |
| JP2007053183A (ja) * | 2005-08-17 | 2007-03-01 | Fujifilm Corp | 固体撮像素子 |
| JP2008091771A (ja) * | 2006-10-04 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
| JP2008218851A (ja) * | 2007-03-07 | 2008-09-18 | Fujifilm Corp | 撮影装置 |
| JP2009188316A (ja) * | 2008-02-08 | 2009-08-20 | Denso Corp | 受光素子 |
| JP2010197821A (ja) * | 2009-02-26 | 2010-09-09 | Sony Corp | レンズの製造方法 |
| JP2013065688A (ja) * | 2011-09-16 | 2013-04-11 | Sony Corp | 固体撮像素子および製造方法、並びに電子機器 |
| JP2016001633A (ja) * | 2014-06-11 | 2016-01-07 | ソニー株式会社 | 固体撮像素子、および電子装置 |
| US20180006072A1 (en) * | 2016-06-30 | 2018-01-04 | Stmicroelectronics (Crolles 2) Sas | Backside illuminated photosensor element with light pipe and light mirror structures |
| WO2018079296A1 (ja) * | 2016-10-27 | 2018-05-03 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及び電子機器 |
| JP2019128509A (ja) * | 2018-01-26 | 2019-08-01 | 大日本印刷株式会社 | レンズシートユニット、レンズシートユニットの製造方法 |
| US10367023B1 (en) * | 2018-06-12 | 2019-07-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor image sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| DE112021006798T5 (de) | 2023-11-30 |
| CN116636018A (zh) | 2023-08-22 |
| WO2022153583A1 (ja) | 2022-07-21 |
| US20240055456A1 (en) | 2024-02-15 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20240729 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20250401 |
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| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20250826 |