JP2008218851A - 撮影装置 - Google Patents
撮影装置 Download PDFInfo
- Publication number
- JP2008218851A JP2008218851A JP2007056612A JP2007056612A JP2008218851A JP 2008218851 A JP2008218851 A JP 2008218851A JP 2007056612 A JP2007056612 A JP 2007056612A JP 2007056612 A JP2007056612 A JP 2007056612A JP 2008218851 A JP2008218851 A JP 2008218851A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 36
- 230000003287 optical effect Effects 0.000 claims description 21
- 230000000694 effects Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 15
- 230000002902 bimodal effect Effects 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 8
- 230000006835 compression Effects 0.000 description 5
- 238000007906 compression Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000012821 model calculation Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000006837 decompression Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- -1 silver halide Chemical class 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
- H01L27/14837—Frame-interline transfer
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
Abstract
【解決手段】照射する平行光線の角度を変えながら受光量を測定した際に、受光面に対して垂直(θ=0°)でない入射角度(θ=3°〜15°の範囲)において受光量が最大となる受光特性を有する固体撮像素子を用いる。これにより、絞りを開くことによって生じる受光量の変化量が大きくなり、絞りの開閉効果が向上するので、絞り値の変更を撮影画像に効果的に反映させることができる。
【選択図】図4
Description
11 CPU
13 撮影レンズ
17 CCDイメージセンサ
30 フォトダイオード
31 読み出し転送ゲート
32 垂直CCD
33 水平CCD
49 受光面
50 光導波路
50a 柱状部
50b 下凸状部
50c 上凸状部
51 層間絶縁膜
52 平坦化膜
53 カラーフィルタ
54 マイクロレンズ
60 光導波路
60a 柱状部
60b 板状部
60c 上凸状部
Claims (10)
- 複数のフォトダイオードを有し、照射する平行光線の角度を変えながら受光量を測定した際に、受光面に対して垂直でない入射角度において受光量が最大となる受光特性を有する固体撮像素子を備えたことを特徴とする撮影装置。
- 前記固体撮像素子への入射光を規制する絞りを備えたことを特徴とする請求項1に記載の撮影装置。
- 前記固体撮像素子の受光量が最大となる前記入射角度は、受光面の垂線に対して3°〜15°の範囲内であることを特徴とする請求項1または2に記載の撮影装置。
- 前記固体撮像素子は、各フォトダイオード上に、コア−クラッド型の光導波路が形成されていることを特徴とする請求項1から3いずれか1項に記載の撮影装置。
- 前記光導波路のコア部は、受光面上に直立した柱状部と、この柱状部の上端に一体形成された下凸状部と、この下凸状部の上面に一体形成された上凸状部とからなることを特徴とする請求項4に記載の撮影装置。
- 前記光導波路のコア部は、受光面上に直立した柱状部と、この柱状部の上端に一体形成された板状部と、この板状部の上面に一体形成された上凸状部とからなることを特徴とする請求項4に記載の撮影装置。
- 前記柱状部の半径は、0.27μm以上であることを特徴とする請求項5または6に記載の撮影装置。
- 前記固体撮像素子は、各フォトダイオードの上方に、特定波長の光を透過させるカラーフィルタを備えていることを特徴とする請求項1から7いずれか1項に記載の撮影装置。
- 前記固体撮像素子の受光量には波長依存性があり、前記受光特性は、フォトダイオードに入射する光が特定の波長領域である場合に生じることを特徴とする請求項8に記載の撮影装置。
- 前記波長領域は、青色光及び緑色光の波長を含む短波長側の波長領域であることを特徴とする請求項9に記載の撮影装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007056612A JP5066377B2 (ja) | 2007-03-07 | 2007-03-07 | 撮影装置 |
US12/073,547 US7732745B2 (en) | 2007-03-07 | 2008-03-06 | Imaging apparatus including a solid state imaging device including a plurality of photo diodes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007056612A JP5066377B2 (ja) | 2007-03-07 | 2007-03-07 | 撮影装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008218851A true JP2008218851A (ja) | 2008-09-18 |
JP5066377B2 JP5066377B2 (ja) | 2012-11-07 |
Family
ID=39740690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007056612A Expired - Fee Related JP5066377B2 (ja) | 2007-03-07 | 2007-03-07 | 撮影装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7732745B2 (ja) |
JP (1) | JP5066377B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022153583A1 (ja) * | 2021-01-13 | 2022-07-21 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110068423A1 (en) * | 2009-09-18 | 2011-03-24 | International Business Machines Corporation | Photodetector with wavelength discrimination, and method for forming the same and design structure |
JP5506517B2 (ja) * | 2010-04-12 | 2014-05-28 | キヤノン株式会社 | 固体撮像素子 |
KR102356695B1 (ko) | 2014-08-18 | 2022-01-26 | 삼성전자주식회사 | 광 유도 부재를 가지는 이미지 센서 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1168074A (ja) * | 1997-08-13 | 1999-03-09 | Sony Corp | 固体撮像素子 |
JP2005072364A (ja) * | 2003-08-26 | 2005-03-17 | Fuji Film Microdevices Co Ltd | 固体撮像素子及びその製造方法 |
JP2005302884A (ja) * | 2004-04-08 | 2005-10-27 | Canon Inc | 固体撮像素子、設計支援方法及び装置 |
JP2006121065A (ja) * | 2004-09-24 | 2006-05-11 | Fuji Photo Film Co Ltd | 固体撮像素子 |
JP2007287819A (ja) * | 2006-04-14 | 2007-11-01 | Sharp Corp | 固体撮像素子およびその製造方法、電子情報機器 |
JP2008091771A (ja) * | 2006-10-04 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005142429A (ja) | 2003-11-07 | 2005-06-02 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
US7119319B2 (en) * | 2004-04-08 | 2006-10-10 | Canon Kabushiki Kaisha | Solid-state image sensing element and its design support method, and image sensing device |
-
2007
- 2007-03-07 JP JP2007056612A patent/JP5066377B2/ja not_active Expired - Fee Related
-
2008
- 2008-03-06 US US12/073,547 patent/US7732745B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1168074A (ja) * | 1997-08-13 | 1999-03-09 | Sony Corp | 固体撮像素子 |
JP2005072364A (ja) * | 2003-08-26 | 2005-03-17 | Fuji Film Microdevices Co Ltd | 固体撮像素子及びその製造方法 |
JP2005302884A (ja) * | 2004-04-08 | 2005-10-27 | Canon Inc | 固体撮像素子、設計支援方法及び装置 |
JP2006121065A (ja) * | 2004-09-24 | 2006-05-11 | Fuji Photo Film Co Ltd | 固体撮像素子 |
JP2007287819A (ja) * | 2006-04-14 | 2007-11-01 | Sharp Corp | 固体撮像素子およびその製造方法、電子情報機器 |
JP2008091771A (ja) * | 2006-10-04 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022153583A1 (ja) * | 2021-01-13 | 2022-07-21 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置 |
Also Published As
Publication number | Publication date |
---|---|
JP5066377B2 (ja) | 2012-11-07 |
US20080217513A1 (en) | 2008-09-11 |
US7732745B2 (en) | 2010-06-08 |
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