CN116569338A - 半导体元件的制造方法、半导体元件以及半导体装置 - Google Patents

半导体元件的制造方法、半导体元件以及半导体装置 Download PDF

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Publication number
CN116569338A
CN116569338A CN202180082891.8A CN202180082891A CN116569338A CN 116569338 A CN116569338 A CN 116569338A CN 202180082891 A CN202180082891 A CN 202180082891A CN 116569338 A CN116569338 A CN 116569338A
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CN
China
Prior art keywords
semiconductor element
semiconductor
gan layer
manufacturing
mask
Prior art date
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Pending
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CN202180082891.8A
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English (en)
Chinese (zh)
Inventor
东克典
正木克明
藤田高吉
林雄一郎
平山知央
泽田达郎
葛西骏
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Kyocera Corp
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Kyocera Corp
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Publication of CN116569338A publication Critical patent/CN116569338A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes

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  • Electrodes Of Semiconductors (AREA)
CN202180082891.8A 2020-12-17 2021-12-06 半导体元件的制造方法、半导体元件以及半导体装置 Pending CN116569338A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020209672 2020-12-17
JP2020-209672 2020-12-17
PCT/JP2021/044789 WO2022131059A1 (ja) 2020-12-17 2021-12-06 半導体素子の製造方法、半導体素子及び半導体装置

Publications (1)

Publication Number Publication Date
CN116569338A true CN116569338A (zh) 2023-08-08

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CN202180082891.8A Pending CN116569338A (zh) 2020-12-17 2021-12-06 半导体元件的制造方法、半导体元件以及半导体装置

Country Status (5)

Country Link
US (1) US20230326993A1 (https=)
EP (1) EP4266350A1 (https=)
JP (1) JPWO2022131059A1 (https=)
CN (1) CN116569338A (https=)
WO (1) WO2022131059A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010040246A1 (en) * 2000-02-18 2001-11-15 Hirotatsu Ishii GaN field-effect transistor and method of manufacturing the same
CN101569014A (zh) * 2007-08-31 2009-10-28 住友电气工业株式会社 肖特基势垒二极管
JP2012114263A (ja) * 2010-11-25 2012-06-14 Pawdec:Kk 半導体素子およびその製造方法
JP2014110310A (ja) * 2012-11-30 2014-06-12 Furukawa Electric Co Ltd:The 窒化物系化合物半導体装置およびその製造方法
JP2015099903A (ja) * 2013-10-17 2015-05-28 ローム株式会社 窒化物半導体装置およびその製造方法
CN106575608A (zh) * 2014-07-25 2017-04-19 株式会社田村制作所 半导体元件及其制造方法、半导体基板以及晶体层叠结构体

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012124268A (ja) * 2010-12-07 2012-06-28 Nippon Inter Electronics Corp 半導体装置
JP6070422B2 (ja) 2013-05-31 2017-02-01 豊田合成株式会社 半導体素装置の製造方法及び半導体装置
JP5940500B2 (ja) * 2013-09-11 2016-06-29 株式会社東芝 半導体装置及びその製造方法
CN112204754B (zh) * 2018-05-30 2024-08-13 加利福尼亚大学董事会 从半导体衬底移除半导体层的方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010040246A1 (en) * 2000-02-18 2001-11-15 Hirotatsu Ishii GaN field-effect transistor and method of manufacturing the same
CN101569014A (zh) * 2007-08-31 2009-10-28 住友电气工业株式会社 肖特基势垒二极管
JP2012114263A (ja) * 2010-11-25 2012-06-14 Pawdec:Kk 半導体素子およびその製造方法
JP2014110310A (ja) * 2012-11-30 2014-06-12 Furukawa Electric Co Ltd:The 窒化物系化合物半導体装置およびその製造方法
JP2015099903A (ja) * 2013-10-17 2015-05-28 ローム株式会社 窒化物半導体装置およびその製造方法
CN106575608A (zh) * 2014-07-25 2017-04-19 株式会社田村制作所 半导体元件及其制造方法、半导体基板以及晶体层叠结构体

Also Published As

Publication number Publication date
WO2022131059A1 (ja) 2022-06-23
EP4266350A1 (en) 2023-10-25
JPWO2022131059A1 (https=) 2022-06-23
US20230326993A1 (en) 2023-10-12

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