CN1165400A - 半导体器件及其装配方法 - Google Patents
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Abstract
提供一种树脂模制型半导体器件,其能防止破裂,并能作的较薄。树脂模制型半导体器件包括半导体芯片,在其头部一侧面和半导体芯片表面接触的引线部件,用于电连接半导体芯片表面和引线部件另一侧表面的连线,用于粘接引线部件一侧面和半导体芯片周围表面的粘接部件,通过合成树脂浇铸半导体芯片,部分引线,连线和粘接部件的封壳。此外,提供引线部件,其在一侧面具有凹面部分和凹槽,该槽从凹面部分延伸到该引线的末端。
Description
本发明涉及半导体器件及其装配方法,特别是涉及树脂模制型半导体器件及其装配方法,其中,用合成树脂模制和密封半导体芯片,引线部分,连线及诸如此类的部件。
通常,在1986年的日本专利申请公开No.61-218139等文献公开了半导体器件。
图8是常规树脂模制型半导体器件的剖面图。
如图8所示,树脂模制型半导体器件具有半导体芯片1,绝缘带2,引线3,金属镀层4,球状焊点5,连线6,模制树脂7。
树脂模制型半导体器件具有LOC(芯片上引线)结构,它利用绝缘带2把引线3粘贴到半导体芯片1的表面上。
对于这样的树脂模制型半导体器件,当半导体芯片(片状器件)1变大时,封壳和半导体芯片1之间的距离变窄。由于封壳不能做大,因为装有半导体芯片1的封壳尺寸是标准化的尺寸,尽管半导体芯片1能做大,但封壳尺寸不变。
存在下述问题,即在装配半导体衬底时由于加热使半导体器件本体产生裂缝8。半导体器件保持在空气中,水份被其吸收,且在装配衬底时因加热使该水份蒸发,蒸汽的力量引起裂缝8。
特别是绝缘带2易于吸收水份,因此在许多情况下绝缘带2引起裂缝8。
绝缘带2也妨碍半导体器件做得较薄。
因此,本发明的目的是解决上述问题,提供半导体器件及其装配方法,其能防止半导体器件破裂和使半导体器件做得更薄。
为达到上述目的,按照本发明的半导体器件包括半导体芯片;引线部件,设置方式是使其头部的一侧表面和半导体芯片的表面接触;连线,用于电连接半导体芯片和引线部件的另一侧面;粘贴部件,用于粘合引线部件1的一侧面和半导体芯片周边表面;封壳,由合成树脂浇铸半导体芯片,引线部件的一部分,连线,粘贴部件模制形成。
按照本发明的半导体器件,利用粘贴部件粘合引线部件一侧面和半导体芯片的周边表面,所以,利用粘贴部件不增加半导体芯片的厚度,能使半导体器件做得较薄。
并且,粘贴部件设置成使半导体芯片的周边部分和引线部件的一侧面相互粘合,因此,使粘贴面积较小。结果,能够减小水的吸收和在装配衬底时几乎不发生树脂破裂的现象。
半导体器件的另一方案是,提供半导体器件,它包括半导体芯片;引线部件,引线部件设置成使其头部的一侧面和半导体芯片表面接触,并在一侧面设有凹面;连线,用以电连接半导体表面和引线部件另一侧表面;粘贴部件,用其粘合引线部件一侧面和角隅部分,该角隅部分包括一半导体芯片的一部分表面和一部分周边表面;一封壳,由合成树脂浇铸半导体芯片,引线部件的一部分,连线,和粘贴部件。
按照本发明另一方案的半导体器件在引线部件设置凹面部分,因此,把粘贴部件设置在凹面部分和把引线部件贴合到半导体芯片的角隅部分。这样使粘合面积变大,能够保持粘合强度。并且,不使粘贴部件脱离出去。
此外,最好使引线部件设置一个从凹面部分延伸到引线部件的末端的凹槽。
由于引线部件设置凹面部分和与其类似的凹槽,则把粘贴部件粘合到凹面部分和凹槽中。这样,把半导体芯片中心部分粘贴到引线部件的一侧面上。结果,粘合面积变大,能够保持粘合强度。并且不使粘合部件脱离出去。
为了实现上述目的,按照本发明的半导体器件装配方法包括下述步骤:(a)确定要贴合到引线部件的粘合剂数量;(b)把预定数量的粘接剂粘合到引线部件的一侧面上;(c)通过粘接剂把引线部件的一侧面和半导体芯片边缘部分粘合在一起;(d)通过干燥粘接剂来固定引线部件和半导体芯片;(e)利用连线来电连接半导体芯片和引线部件;(f)用合成树脂形成浇铸,半导体芯片,引线部件和连线。
按照本发明半导体器件的装配方法,把预定数量的粘接剂加到引线部件的一侧面上,然后粘合引线部件一侧面和半导体芯片的边缘表面。这样获得了薄的和树脂几乎没有破裂的半导体器件。
通过下面的结合附图进行叙述,本发明的其它目的和优点将显而易见,其中
图1是表示按照本发明第1实施例的树脂模制型半导体器件的剖面图;
图2(a)到图2(c)是表示按照本发明的树脂模制型半导体器件装配方法的简图;
图3(a)到图3(b)是表示树脂模制型半导体器件另一种装配方法的简图;
图4是表示按照本发明树脂模制型半导体器件的剖面图;
图5是表示按照本发明第2实施例树脂模制型半导体器件引线框架的局部平面图;
图6是表示按照本发明第3实施例的树脂模制型半导体器件的剖面图。
图7是表示按照本发明第3实施例树脂模制型半导体器件的局部平面图。
图8是常规树脂模制型半导体器件的剖面图。
图9是表示利用常规技术出现的问题剖面图。
下面参考附图叙述本发明的优选实施例。
第1实施例
图1是按照本发明第1实施例树脂模制型半导体器件的剖面图。
如图1所示,树脂模制型半导体器件10装配有半导体芯片11,引线12,连线13,模制树脂14,粘合剂(液体合成树脂)15。
通过连线13把引线12电连到半导体芯片11。以此把引线12和半导体芯片11相连,使得头部12a的粘贴侧面12b和半导体芯片11的表面11a相互接触。
不是表面11a而是半导体芯片11的周围表面11b通过粘合剂15和引线12的粘贴侧面(一侧面)12b相互固定。为了固定半导体芯片11和引线12,预先把粘合剂15涂在相应于半导体芯片11的周围表面11b的位置,引线12的粘贴侧面,然后,再把半导体芯片11粘贴到那里。
然后用合成树脂14浇铸半导体芯片11,引线12,连线13,液态粘性树脂15,使引线12的一部分伸到外面,由此进行封装。
按照本发明第1实施例,利用粘合剂15,在半导体芯片11的周围表面11b,粘接和固定引线12和半导体芯片11,由于利用粘合剂,没有增加半导体器件的厚度,能使半导体器件作得较薄。
此外,仅仅把粘合剂15粘到每个引线12上,即粘接面积小。这样可能减少水的吸收,使得安装衬底时期,几乎不产生破裂现象。
下面参考附图2(a)到2(c),说明半导体器件的装配方法。
首先,如图2(a)所示,提供具有多个引线12的引线框架16,使其和半导体芯片11的表面11a相互接触。
如图2(b)所示,利用压力通过配料器17把预定量的粘合剂15加到引线12上面。把粘合剂15施加到相应于半导体芯片11周围表面11b位置的每个引线12的粘合剂侧面12b上。而且,施加粘合剂15的位置可以是任意位置,在那里可以把半导体芯片11外围表面粘接到引线12的粘贴侧面12b上。
然后如图2(c)所示,翻转引线框架16,然后把半导体芯片粘接到引线12上。干燥粘合剂15,固定半导体芯片11和引线12。然后进行常规工艺。
按照该装配方法,把预定量的液体粘合树脂15粘接到相应于半导体芯片11的外围表面11b的引线12的粘贴侧面12b上,使引线12头部12a的粘贴侧面12b和半导体芯片11的表面11a相互接触。于是,能够获得薄的和几乎没有裂缝的半导体器件。
接着,参考附图3(a)和3(b)说明半导体器件的另一种装配方法。
如图2(a)到2(c)所示,提供具有多个引线12的引线框架16,使其和半导体芯片11的表面11a相互接触。
如图3(a)所示,把引线框架16的引线12穿过位于半导体器件装配机器中装有粘合剂(液体合成树脂)22的浸料槽(涂胶装置)21a,以便只把粘合剂22粘到所需位置,即使粘合剂22和引线12相接触的位置。
在浸料槽21a中,能按照半导体芯片11的尺寸改变粘合剂22的施加位置。然后,把预定数量的粘合剂22施加到每一个引线12上(见图3(b))。
然后,把涂有粘合剂22的引线12传送到引线框架保存槽(保存装置)21b。利用粘合剂22,在粘接装置(未表示)把半导体芯片11粘接到引线12的粘接侧面。在干燥接合装置中(未表示),干燥粘合剂22,把半导体芯片11和引线12连接在一起。然后,在连接装置(未表示)中,通过连线13,电连接半导体芯片11和引线12,在封装装置中(未表示),利用树脂浇铸半导体芯片11,引线12,连线13等。以后进行常规工艺。
按照另外一种装配方法,把引线框架16穿过浸粘合剂槽21a,使粘合剂22粘到引线12上面,即把粘合剂22粘到引线12下面的粘贴侧面12b上。于是,不必翻转引线框架16,而能光滑地把半导体芯片11粘接到引线框架16上。
此外,粘合剂22可以是任何的粘接半导体芯片11和引线12的粘合件。
第2实施例
下面说明本发明第2实施例。
图4是表示按照本发明第2实施例的树脂模制型半导体器件的剖面图。图5是表示树脂模制型半导体器件引线框架的局部平面图。
如图4和图5所示,提供树脂模制型半导体器件30的引线31,在其粘贴侧面(一侧表面)31b设有凹面部分32。通过半腐蚀形成凹面部分32,即利用溶液等把引线31腐蚀到其厚度的一半。能够利用任何方法,以任何形状形成凹面部分32。
半导体芯片11和引线框架33的引线31设置成使引线31的头部和半导体芯片11的表面11a相互接触,并且通过连线13使它们相互电连接,类似于树脂模制型半导体器件10。
利用粘合剂35把半导体芯片11角隅部分11c的附近区域固定到引线31的粘接侧面31b。即,角隅11c附近区域包括表面11a的一部分和半导体芯片11周围表面11b的一部分。
在装配树脂模制型半导体器件时,预先把粘合剂涂到相应于半导体芯片11周围表面11b位置的引线31的粘接侧面31b处。同时,涂有粘合剂35的部分进入凹面部分32,然后,由粘合剂35把半导体芯片11角隅部分11c的附近区域粘接到引线31的粘接侧面31b处。
然后,利用合成树脂14浇铸半导体芯片11,连线12,连线13和粘合剂15,使引线12的一部分伸出到外边,由此,装配封壳。
按照第2实施例的树脂模制型半导体器件30,利用粘合剂35,把半导体芯片11的角隅部分11c的附近区域粘接到引线31的粘接侧面31b,因此,粘接区域变大,结果能够保持粘接强度。
此外,在引线31中形成凹面部分32,因此,虽然涂粘合剂35的量比预定量大,但剩余的粘合剂35进入凹面部分而不脱离掉。
第3实施例
下面,说明本发明第3实施例。
图6是表示按照本发明第3实施例树脂模制型半导体器件的剖面图。图7是表示树脂模制型半导体器件引线框架的局部平面图。
如图6和图7所示,提供树脂模制型半导体器件40的引线41,具有凹面部分42和凹槽46,凹槽46从凹面部分42延伸到在粘合剂一侧(一侧面)41b中每个引线41的端部,通过半腐蚀形成凹面部分42和凹槽46,即利用溶液等把引线41腐蚀到其厚度的一半。不用说可能利用任何方法以任何形状形成凹面部分42和凹槽46。
半导体芯片11和引线框架43的引线41设置成使得引线41的头部和半导体芯片11的表面11a相互接触,并且通过连线13使它们电相连,类似于树脂模制型半导体器件10、30。
利用粘合剂45把半导体芯片11的角隅11c的附近区域连接到引线41的粘接侧面41b。中心11c附近区域包括表面11a的部分和半导体芯片11的周围表面11b的部分。
在装配树脂模制型半导体器件40时,预先把粘合剂45涂到相应于半导体芯片11周围表面11b位置的引线41的粘接侧面41b上。同时,涂粘合剂45的部分进入凹面部分42和凹槽46,然后利用粘合剂45把半导体芯片11角隅11c附近区域粘接到引线41的粘接侧面41b上。
然后,利用合成树脂浇铸半导体芯片11,引线12,连线13和粘合剂15,使引线12的部分伸出外边,由此对封壳进行装配。
按照第3实施例的树脂模制型半导体器件40,利用粘合剂45把半导体芯片11中心11c的附近区域,粘接到引线41的粘接侧面41b上,因此,粘接面积变大,结果能保持粘接强度。
此外,在引线41中形成凹面部分42和凹槽46,因此,虽然涂粘合剂45的量比预定量大,但是由于剩余的粘合剂45进入凹面部分42和凹槽46,以致于其不能被脱出。
下面详细说明按照本发明的树脂模制型半导体器件能够达到的效果。
在半导体芯片周围表面用粘合剂连接引线和半导体芯片,由于利用粘合剂没有增加半导体器件的厚度,使半导体器件能作的较薄。
此外,因为只把粘合剂涂在每个引线上,所以涂粘合剂面积小。结果减少水的吸收,因此,在安装衬底时几乎不产生树脂破裂。
把预定数量的粘合剂,利用压力涂到相应于半导体芯片周围表面位置的引线表面,然后在那里粘接半导体芯片,因此能获得薄的和几乎不使树脂破裂的树脂模制型半导体器件。
在引线表面的粘接侧面朝下的状态,把引线框架穿过浸粘合剂槽,来使引线涂粘合剂,因此不需要翻转引线框架,则能光滑地把半导体芯片粘接到引线框架上。
在半导体芯片角隅附近,利用粘合剂来粘接引线和半导体芯片,因此,粘接面变大,能够保持强度。
此外,在引线中设有凹面部分,因此没有发生使粘合剂脱出的现象。
这样叙述的本发明,显而易见,可以各种方式进行相同的变化。上述变化不脱离本发明的精神实质和范围,对于本领域的技术人员来说,所有的修改是显而易见的,并且包括在下述权利要求的范围中。
Claims (10)
1、一种半导体器件,其包括:
半导体芯片;
引线部件,在其头部的一侧表面和半导体芯片表面相互接触;
连线,用于电连接半导体芯片和引线部件的另一侧表面;
粘合剂部件,用于粘接引线部件一个侧面和半导体芯片周围表面;
封壳,其通过合成树脂来浇铸半导体芯片,引线部件的一部分,连线和粘合剂。
2、一种按照权利要求1的半导体器件,其特征是,所述粘合剂部件是液体合成树脂固化部件。
3、一种半导体器件,其包括:
半导体芯片,
引线部件,其头部一侧表面和半导体芯片表面相互接,并在一侧面设置有凹面部分;
连线,用于电连接半导体芯片表面和引线部件的另一侧面;
粘合剂部件,用来粘接引线部件一侧表面和与该引线部件相互接触的半导体芯片的角隅部分,其包括表面部分和周围表面部分;
封壳,其通过合成树脂浇铸半导体芯片,引线部件,连线和粘合剂部件。
4、一种按照权利要求3的半导体器件,其特征是,提供所述的引线部件,具有从凹面部分延伸到引线部件末端的凹槽。
5、一种半导体器件的装配方法,其包括下列步骤:
(a)确定涂到引线部件上的粘合剂数量;
(b)把该数量的粘合剂涂到引线部件的一侧表面上;
(c)利用粘合剂来粘接引线部件一侧表面和半导体芯片的周围表面;
(d)通过干燥粘合剂,把引线部件和半导体芯片固定地连接起来;
(e)通过连线把半导体芯片和引线部件电连接起来;
(f)利用合成树脂浇铸半导体芯片、部分引线部件,和连线,形成封壳。
6、一种按照权利要求5的半导体器件的装配方法,其特征是,在使引线部件一侧面保持一个方向的状态下,进行涂粘合剂。
7、一种按照权利要求5的半导体器件的装配方法,其特征是,在使引线部件一侧面朝下的状态,涂粘合剂。
8、一种半导体器件的装配方法,其包括下列步骤:
(a)在要和半导体芯片接触的引线部件一侧表面形成凹面部分;
(b)确定涂到引线部件上的粘合剂数量;
(c)把该数量的粘合剂涂到引线部件的一侧面和凹面部分;
(d)利用粘合剂把引线部件一侧表面粘接到和该引线部件相接触的半导体芯片的角隅部分,其包括表面部分和周围表面部分;
(e)通过干燥粘合剂使引线部件和半导体芯片固定地连接起来;
(f)通过连线电连接半导体芯片和引线部件;
(g)利用合成树脂浇铸半导体芯片,部分引线部件和连线,形成封壳。
9、一种按照权利要求8的半导体器件的装配方法,还包括形成凹槽的步骤,该槽从凹面部分延伸到引线部件的末端。
10、一种装配半导体器件的装配机器,其包括:
粘胶装置,把预定量的粘合剂涂到和半导体芯片相互接触的引线部件的一侧面上;
保存装置,保存涂粘合剂的引线部件,直到把半导体芯片设置在引线部件上;
粘接装置,设置和粘接半导体芯片到引线部件的一个侧面上;
干燥和固定装置,用于干燥和固定连接半导体芯片和引线部件;
连接装置,通过连线电连接半导体芯片和引线部件;
封壳形成装置,利用合成树脂浇铸半导体芯片,部分引线部件,粘合剂和连线,以便形成封壳。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8086968A JPH09283545A (ja) | 1996-04-10 | 1996-04-10 | 樹脂封止型半導体装置及びその製造方法 |
JP86968/96 | 1996-04-10 |
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CN1165400A true CN1165400A (zh) | 1997-11-19 |
CN1091950C CN1091950C (zh) | 2002-10-02 |
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CN97111651A Expired - Fee Related CN1091950C (zh) | 1996-04-10 | 1997-04-10 | 半导体器件及其装配方法 |
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US (1) | US6097083A (zh) |
EP (1) | EP0801424B1 (zh) |
JP (1) | JPH09283545A (zh) |
KR (1) | KR100366110B1 (zh) |
CN (1) | CN1091950C (zh) |
DE (1) | DE69735032T2 (zh) |
TW (1) | TW494507B (zh) |
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US5969410A (en) * | 1996-05-09 | 1999-10-19 | Oki Electric Industry Co., Ltd. | Semiconductor IC device having chip support element and electrodes on the same surface |
JP2001320007A (ja) * | 2000-05-09 | 2001-11-16 | Dainippon Printing Co Ltd | 樹脂封止型半導体装置用フレーム |
JP2005277415A (ja) * | 2004-03-23 | 2005-10-06 | Samsung Electronics Co Ltd | リードチップ直接付着型半導体パッケージ、その製造方法及び装置 |
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JPH06105721B2 (ja) * | 1985-03-25 | 1994-12-21 | 日立超エル・エス・アイエンジニアリング株式会社 | 半導体装置 |
US4974057A (en) * | 1986-10-31 | 1990-11-27 | Texas Instruments Incorporated | Semiconductor device package with circuit board and resin |
JPS6437132U (zh) * | 1987-08-31 | 1989-03-06 | ||
JPH02125454A (ja) * | 1988-11-02 | 1990-05-14 | Nec Corp | 樹脂封止型半導体装置 |
US5403785A (en) * | 1991-03-03 | 1995-04-04 | Matsushita Electric Works, Ltd. | Process of fabrication IC chip package from an IC chip carrier substrate and a leadframe and the IC chip package fabricated thereby |
SG44840A1 (en) * | 1992-09-09 | 1997-12-19 | Texas Instruments Inc | Reduced capacitance lead frame for lead on chip package |
JP3137518B2 (ja) * | 1993-10-29 | 2001-02-26 | 株式会社巴川製紙所 | 電子部品用液状接着剤およびそれを用いる絶縁接着層の形成方法 |
TW270213B (zh) * | 1993-12-08 | 1996-02-11 | Matsushita Electric Ind Co Ltd | |
US5545921A (en) * | 1994-11-04 | 1996-08-13 | International Business Machines, Corporation | Personalized area leadframe coining or half etching for reduced mechanical stress at device edge |
JP3127195B2 (ja) * | 1994-12-06 | 2001-01-22 | シャープ株式会社 | 発光デバイスおよびその製造方法 |
TW314650B (zh) * | 1995-06-21 | 1997-09-01 | Oki Electric Ind Co Ltd |
-
1996
- 1996-04-10 JP JP8086968A patent/JPH09283545A/ja not_active Withdrawn
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1997
- 1997-04-02 TW TW086104250A patent/TW494507B/zh not_active IP Right Cessation
- 1997-04-07 DE DE69735032T patent/DE69735032T2/de not_active Expired - Fee Related
- 1997-04-07 EP EP97105675A patent/EP0801424B1/en not_active Expired - Lifetime
- 1997-04-10 KR KR1019970013295A patent/KR100366110B1/ko not_active IP Right Cessation
- 1997-04-10 CN CN97111651A patent/CN1091950C/zh not_active Expired - Fee Related
- 1997-04-10 US US08/827,693 patent/US6097083A/en not_active Expired - Fee Related
Also Published As
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KR100366110B1 (ko) | 2003-02-19 |
US6097083A (en) | 2000-08-01 |
KR970072220A (ko) | 1997-11-07 |
EP0801424B1 (en) | 2006-01-04 |
TW494507B (en) | 2002-07-11 |
JPH09283545A (ja) | 1997-10-31 |
CN1091950C (zh) | 2002-10-02 |
EP0801424A2 (en) | 1997-10-15 |
DE69735032D1 (de) | 2006-03-30 |
EP0801424A3 (zh) | 1997-10-22 |
DE69735032T2 (de) | 2006-08-31 |
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