CN115956297B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN115956297B
CN115956297B CN202180050391.6A CN202180050391A CN115956297B CN 115956297 B CN115956297 B CN 115956297B CN 202180050391 A CN202180050391 A CN 202180050391A CN 115956297 B CN115956297 B CN 115956297B
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CN
China
Prior art keywords
vgs
semiconductor device
region
conductivity type
field effect
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CN202180050391.6A
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English (en)
Chinese (zh)
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CN115956297A (zh
Inventor
太田朋成
田口晶英
中山佑介
中村浩尚
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Nuvoton Technology Corp Japan
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Nuvoton Technology Corp Japan
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Publication of CN115956297A publication Critical patent/CN115956297A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/154—Dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202180050391.6A 2020-10-23 2021-10-21 半导体装置 Active CN115956297B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063104786P 2020-10-23 2020-10-23
US63/104,786 2020-10-23
PCT/JP2021/038941 WO2022085765A1 (ja) 2020-10-23 2021-10-21 半導体装置

Publications (2)

Publication Number Publication Date
CN115956297A CN115956297A (zh) 2023-04-11
CN115956297B true CN115956297B (zh) 2023-09-08

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Family Applications (1)

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CN202180050391.6A Active CN115956297B (zh) 2020-10-23 2021-10-21 半导体装置

Country Status (5)

Country Link
US (1) US11735655B2 (https=)
EP (1) EP4187617A4 (https=)
JP (1) JP7179236B2 (https=)
CN (1) CN115956297B (https=)
WO (1) WO2022085765A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12051747B2 (en) * 2022-03-11 2024-07-30 Nuvoton Technology Corporation Japan Semiconductor device
US12550719B2 (en) * 2022-09-15 2026-02-10 International Business Machines Corporation VTFET circuit with optimized output

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104441A (ja) * 1991-02-27 1994-04-15 Nec Corp 絶縁ゲート電界効果トランジスタの製造方法
JP2007266505A (ja) * 2006-03-29 2007-10-11 Toshiba Corp 電力用半導体素子
JP2015162578A (ja) * 2014-02-27 2015-09-07 住友電気工業株式会社 ワイドバンドギャップ半導体装置およびその製造方法
CN105409006A (zh) * 2013-07-16 2016-03-16 松下知识产权经营株式会社 半导体装置
CN106024609A (zh) * 2016-07-12 2016-10-12 杭州士兰集成电路有限公司 沟槽功率器件及制作方法
WO2018123799A1 (ja) * 2016-12-27 2018-07-05 パナソニックＩｐマネジメント株式会社 半導体装置
JP2019201217A (ja) * 2014-04-15 2019-11-21 ローム株式会社 半導体装置および半導体装置の製造方法
WO2019244387A1 (ja) * 2018-06-19 2019-12-26 パナソニックＩｐマネジメント株式会社 半導体装置
JP2020167337A (ja) * 2019-03-29 2020-10-08 ローム株式会社 半導体装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5288653A (en) * 1991-02-27 1994-02-22 Nec Corporation Process of fabricating an insulated-gate field effect transistor
JPH11345969A (ja) * 1998-06-01 1999-12-14 Toshiba Corp 電力用半導体装置
JP2002100770A (ja) * 2000-09-22 2002-04-05 Toshiba Corp 絶縁ゲート型半導体装置
GB0327791D0 (en) * 2003-11-29 2003-12-31 Koninkl Philips Electronics Nv Trench insulated gate field effect transistor
US7372088B2 (en) 2004-01-27 2008-05-13 Matsushita Electric Industrial Co., Ltd. Vertical gate semiconductor device and method for fabricating the same
JP3999225B2 (ja) 2004-01-27 2007-10-31 松下電器産業株式会社 半導体装置およびその製造方法
JP2007311771A (ja) * 2006-04-21 2007-11-29 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP5013436B2 (ja) * 2009-06-04 2012-08-29 三菱電機株式会社 電力用半導体装置
JP6566512B2 (ja) 2014-04-15 2019-08-28 ローム株式会社 半導体装置および半導体装置の製造方法
WO2017099095A1 (ja) * 2015-12-11 2017-06-15 富士電機株式会社 半導体装置および製造方法
CN108780814B (zh) * 2016-09-14 2021-12-21 富士电机株式会社 半导体装置及其制造方法
JP6817116B2 (ja) * 2017-03-14 2021-01-20 エイブリック株式会社 半導体装置
US10340372B1 (en) * 2017-12-20 2019-07-02 Semiconductor Components Industries, Llc Transistor device having a pillar structure
JP2019161103A (ja) 2018-03-15 2019-09-19 株式会社東芝 半導体装置
JP7326725B2 (ja) * 2018-11-08 2023-08-16 富士電機株式会社 半導体装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104441A (ja) * 1991-02-27 1994-04-15 Nec Corp 絶縁ゲート電界効果トランジスタの製造方法
JP2007266505A (ja) * 2006-03-29 2007-10-11 Toshiba Corp 電力用半導体素子
CN105409006A (zh) * 2013-07-16 2016-03-16 松下知识产权经营株式会社 半导体装置
JP2015162578A (ja) * 2014-02-27 2015-09-07 住友電気工業株式会社 ワイドバンドギャップ半導体装置およびその製造方法
JP2019201217A (ja) * 2014-04-15 2019-11-21 ローム株式会社 半導体装置および半導体装置の製造方法
CN106024609A (zh) * 2016-07-12 2016-10-12 杭州士兰集成电路有限公司 沟槽功率器件及制作方法
WO2018123799A1 (ja) * 2016-12-27 2018-07-05 パナソニックＩｐマネジメント株式会社 半導体装置
WO2019244387A1 (ja) * 2018-06-19 2019-12-26 パナソニックＩｐマネジメント株式会社 半導体装置
JP2020167337A (ja) * 2019-03-29 2020-10-08 ローム株式会社 半導体装置

Also Published As

Publication number Publication date
US20230223471A1 (en) 2023-07-13
EP4187617A4 (en) 2024-02-14
WO2022085765A1 (ja) 2022-04-28
JP7179236B2 (ja) 2022-11-28
JPWO2022085765A1 (https=) 2022-04-28
EP4187617A1 (en) 2023-05-31
CN115956297A (zh) 2023-04-11
US11735655B2 (en) 2023-08-22

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