JPWO2022085765A1 - - Google Patents
Info
- Publication number
- JPWO2022085765A1 JPWO2022085765A1 JP2022543605A JP2022543605A JPWO2022085765A1 JP WO2022085765 A1 JPWO2022085765 A1 JP WO2022085765A1 JP 2022543605 A JP2022543605 A JP 2022543605A JP 2022543605 A JP2022543605 A JP 2022543605A JP WO2022085765 A1 JPWO2022085765 A1 JP WO2022085765A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
- H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/152—Source regions of DMOS transistors
- H10D62/154—Dispositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202063104786P | 2020-10-23 | 2020-10-23 | |
| US63/104,786 | 2020-10-23 | ||
| PCT/JP2021/038941 WO2022085765A1 (ja) | 2020-10-23 | 2021-10-21 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022085765A1 true JPWO2022085765A1 (https=) | 2022-04-28 |
| JPWO2022085765A5 JPWO2022085765A5 (https=) | 2022-10-05 |
| JP7179236B2 JP7179236B2 (ja) | 2022-11-28 |
Family
ID=81290674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022543605A Active JP7179236B2 (ja) | 2020-10-23 | 2021-10-21 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11735655B2 (https=) |
| EP (1) | EP4187617A4 (https=) |
| JP (1) | JP7179236B2 (https=) |
| CN (1) | CN115956297B (https=) |
| WO (1) | WO2022085765A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12051747B2 (en) * | 2022-03-11 | 2024-07-30 | Nuvoton Technology Corporation Japan | Semiconductor device |
| US12550719B2 (en) * | 2022-09-15 | 2026-02-10 | International Business Machines Corporation | VTFET circuit with optimized output |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06104441A (ja) * | 1991-02-27 | 1994-04-15 | Nec Corp | 絶縁ゲート電界効果トランジスタの製造方法 |
| JP2007266505A (ja) * | 2006-03-29 | 2007-10-11 | Toshiba Corp | 電力用半導体素子 |
| WO2017099095A1 (ja) * | 2015-12-11 | 2017-06-15 | 富士電機株式会社 | 半導体装置および製造方法 |
| WO2018123799A1 (ja) * | 2016-12-27 | 2018-07-05 | パナソニックＩｐマネジメント株式会社 | 半導体装置 |
| JP2018152504A (ja) * | 2017-03-14 | 2018-09-27 | エイブリック株式会社 | 半導体装置 |
| JP2019201217A (ja) * | 2014-04-15 | 2019-11-21 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
| WO2019244387A1 (ja) * | 2018-06-19 | 2019-12-26 | パナソニックＩｐマネジメント株式会社 | 半導体装置 |
| JP2020077800A (ja) * | 2018-11-08 | 2020-05-21 | 富士電機株式会社 | 半導体装置 |
| JP2020167337A (ja) * | 2019-03-29 | 2020-10-08 | ローム株式会社 | 半導体装置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5288653A (en) * | 1991-02-27 | 1994-02-22 | Nec Corporation | Process of fabricating an insulated-gate field effect transistor |
| JPH11345969A (ja) * | 1998-06-01 | 1999-12-14 | Toshiba Corp | 電力用半導体装置 |
| JP2002100770A (ja) * | 2000-09-22 | 2002-04-05 | Toshiba Corp | 絶縁ゲート型半導体装置 |
| GB0327791D0 (en) * | 2003-11-29 | 2003-12-31 | Koninkl Philips Electronics Nv | Trench insulated gate field effect transistor |
| US7372088B2 (en) | 2004-01-27 | 2008-05-13 | Matsushita Electric Industrial Co., Ltd. | Vertical gate semiconductor device and method for fabricating the same |
| JP3999225B2 (ja) | 2004-01-27 | 2007-10-31 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
| JP2007311771A (ja) * | 2006-04-21 | 2007-11-29 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| JP5013436B2 (ja) * | 2009-06-04 | 2012-08-29 | 三菱電機株式会社 | 電力用半導体装置 |
| JP6295444B2 (ja) * | 2013-07-16 | 2018-03-20 | パナソニックＩｐマネジメント株式会社 | 半導体装置 |
| JP2015162578A (ja) * | 2014-02-27 | 2015-09-07 | 住友電気工業株式会社 | ワイドバンドギャップ半導体装置およびその製造方法 |
| JP6566512B2 (ja) | 2014-04-15 | 2019-08-28 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
| CN106024609B (zh) * | 2016-07-12 | 2019-03-08 | 杭州士兰集成电路有限公司 | 沟槽功率器件及制作方法 |
| CN108780814B (zh) * | 2016-09-14 | 2021-12-21 | 富士电机株式会社 | 半导体装置及其制造方法 |
| US10340372B1 (en) * | 2017-12-20 | 2019-07-02 | Semiconductor Components Industries, Llc | Transistor device having a pillar structure |
| JP2019161103A (ja) | 2018-03-15 | 2019-09-19 | 株式会社東芝 | 半導体装置 |
-
2021
- 2021-10-21 EP EP21882905.9A patent/EP4187617A4/en active Pending
- 2021-10-21 WO PCT/JP2021/038941 patent/WO2022085765A1/ja not_active Ceased
- 2021-10-21 JP JP2022543605A patent/JP7179236B2/ja active Active
- 2021-10-21 CN CN202180050391.6A patent/CN115956297B/zh active Active
-
2023
- 2023-02-27 US US18/175,196 patent/US11735655B2/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06104441A (ja) * | 1991-02-27 | 1994-04-15 | Nec Corp | 絶縁ゲート電界効果トランジスタの製造方法 |
| JP2007266505A (ja) * | 2006-03-29 | 2007-10-11 | Toshiba Corp | 電力用半導体素子 |
| JP2019201217A (ja) * | 2014-04-15 | 2019-11-21 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
| WO2017099095A1 (ja) * | 2015-12-11 | 2017-06-15 | 富士電機株式会社 | 半導体装置および製造方法 |
| WO2018123799A1 (ja) * | 2016-12-27 | 2018-07-05 | パナソニックＩｐマネジメント株式会社 | 半導体装置 |
| JP2018152504A (ja) * | 2017-03-14 | 2018-09-27 | エイブリック株式会社 | 半導体装置 |
| WO2019244387A1 (ja) * | 2018-06-19 | 2019-12-26 | パナソニックＩｐマネジメント株式会社 | 半導体装置 |
| JP2020077800A (ja) * | 2018-11-08 | 2020-05-21 | 富士電機株式会社 | 半導体装置 |
| JP2020167337A (ja) * | 2019-03-29 | 2020-10-08 | ローム株式会社 | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20230223471A1 (en) | 2023-07-13 |
| EP4187617A4 (en) | 2024-02-14 |
| WO2022085765A1 (ja) | 2022-04-28 |
| JP7179236B2 (ja) | 2022-11-28 |
| CN115956297B (zh) | 2023-09-08 |
| EP4187617A1 (en) | 2023-05-31 |
| CN115956297A (zh) | 2023-04-11 |
| US11735655B2 (en) | 2023-08-22 |
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