CN115769387A - 空穴传输材料、量子点发光器件及其制作方法、显示装置 - Google Patents

空穴传输材料、量子点发光器件及其制作方法、显示装置 Download PDF

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CN115769387A
CN115769387A CN202080002499.3A CN202080002499A CN115769387A CN 115769387 A CN115769387 A CN 115769387A CN 202080002499 A CN202080002499 A CN 202080002499A CN 115769387 A CN115769387 A CN 115769387A
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quantum dot
hole transport
light emitting
group
transport material
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CN115769387B (zh
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王好伟
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BOE Technology Group Co Ltd
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Abstract

本公开提供了一种空穴传输材料、量子点发光器件及其制作方法、显示装置,在量子点的表面修饰与空穴传输材料的修饰基团交联的配体即配体中的交联基团,在制作量子点发光器件时,量子点材料的交联基团与空穴传输材料的修饰基团在设定的外界刺激下发生交联,增加发光层与空穴传输层之间的耦合程度,弱化发光层与空穴传输层之间的界面结构,有利于载流子的传输。在不牺牲电子传输速率的情况下,最大程度的增加空穴的注入,以调控载流子的注入平衡,提升量子点发光器件的载流子复合速率,进而提高量子点发光器件的发光效率等器件性能。并且,空穴注入的增加会降低载流子在界面处的聚集,进而提升器件稳定性。

Description

PCT国内申请,说明书已公开。

Claims (24)

  1. PCT国内申请,权利要求书已公开。
CN202080002499.3A 2020-10-28 2020-10-28 空穴传输材料、量子点发光器件及其制作方法、显示装置 Active CN115769387B (zh)

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Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105070849A (zh) * 2015-07-14 2015-11-18 Tcl集团股份有限公司 一种量子点发光层排布致密的发光器件及其制备方法
CN106531860A (zh) * 2016-12-22 2017-03-22 Tcl集团股份有限公司 量子点发光层与器件及制备方法、发光模组与显示装置
WO2018035948A1 (zh) * 2016-08-23 2018-03-01 苏州星烁纳米科技有限公司 发光二极管装置、其制备方法和基于其的显示装置
KR20180035278A (ko) * 2016-09-28 2018-04-06 경북대학교 산학협력단 양자점 발광 소자 및 이의 제조 방법
CN109509842A (zh) * 2019-01-08 2019-03-22 京东方科技集团股份有限公司 量子点发光二极管及其制备方法、显示面板
CN109994619A (zh) * 2017-12-29 2019-07-09 Tcl集团股份有限公司 量子点薄膜及其制备方法和qled器件
WO2019196778A1 (zh) * 2018-04-12 2019-10-17 京东方科技集团股份有限公司 量子点发光二极管及其制作方法、显示设备
CN110590549A (zh) * 2019-09-30 2019-12-20 京东方科技集团股份有限公司 配体、量子点及量子点层的图案化方法
CN110783474A (zh) * 2019-11-14 2020-02-11 佛山科学技术学院 一种基于量子点的电致发光二极管及光电设备
CN110835529A (zh) * 2019-11-28 2020-02-25 京东方科技集团股份有限公司 量子点材料及其制备方法、量子点发光器件、显示装置
WO2020108073A1 (zh) * 2018-11-28 2020-06-04 Tcl科技集团股份有限公司 一种量子点发光二极管及其制备方法
CN111725408A (zh) * 2019-03-20 2020-09-29 Tcl集团股份有限公司 量子点发光二极管及其制备方法和复合材料

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080069085A (ko) * 2007-01-22 2008-07-25 삼성전자주식회사 탠덤 구조의 나노점 발광 다이오드 및 그 제조 방법
US10720591B2 (en) * 2018-03-27 2020-07-21 Sharp Kabushiki Kaisha Crosslinked emissive layer containing quantum dots for light-emitting device and method for making same
KR102087299B1 (ko) * 2018-04-09 2020-03-10 숭실대학교산학협력단 양자점 박막, 이의 패터닝 방법 및 이를 적용한 양자점 발광소자
CN111180602B (zh) * 2020-01-06 2022-04-05 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制备方法
CN111269250B (zh) * 2020-03-09 2022-09-20 广州追光科技有限公司 一种有机化合物及其在有机电子器件的应用
US11309507B2 (en) * 2020-06-24 2022-04-19 Sharp Kabushiki Kaisha Control of the position of quantum dots in emissive layer of quantum dot light emitting diode

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105070849A (zh) * 2015-07-14 2015-11-18 Tcl集团股份有限公司 一种量子点发光层排布致密的发光器件及其制备方法
WO2018035948A1 (zh) * 2016-08-23 2018-03-01 苏州星烁纳米科技有限公司 发光二极管装置、其制备方法和基于其的显示装置
KR20180035278A (ko) * 2016-09-28 2018-04-06 경북대학교 산학협력단 양자점 발광 소자 및 이의 제조 방법
CN106531860A (zh) * 2016-12-22 2017-03-22 Tcl集团股份有限公司 量子点发光层与器件及制备方法、发光模组与显示装置
CN109994619A (zh) * 2017-12-29 2019-07-09 Tcl集团股份有限公司 量子点薄膜及其制备方法和qled器件
WO2019196778A1 (zh) * 2018-04-12 2019-10-17 京东方科技集团股份有限公司 量子点发光二极管及其制作方法、显示设备
WO2020108073A1 (zh) * 2018-11-28 2020-06-04 Tcl科技集团股份有限公司 一种量子点发光二极管及其制备方法
CN109509842A (zh) * 2019-01-08 2019-03-22 京东方科技集团股份有限公司 量子点发光二极管及其制备方法、显示面板
CN111725408A (zh) * 2019-03-20 2020-09-29 Tcl集团股份有限公司 量子点发光二极管及其制备方法和复合材料
CN110590549A (zh) * 2019-09-30 2019-12-20 京东方科技集团股份有限公司 配体、量子点及量子点层的图案化方法
CN110783474A (zh) * 2019-11-14 2020-02-11 佛山科学技术学院 一种基于量子点的电致发光二极管及光电设备
CN110835529A (zh) * 2019-11-28 2020-02-25 京东方科技集团股份有限公司 量子点材料及其制备方法、量子点发光器件、显示装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
蔡勤山;王世荣;肖殷;李祥高;: "交联型小分子空穴传输材料在溶液工艺制备有机发光二极管中的应用", 化学进展, no. 08, 24 August 2018 (2018-08-24) *

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