CN115427615A - 碳化硅单晶和碳化硅单晶的制造方法 - Google Patents

碳化硅单晶和碳化硅单晶的制造方法 Download PDF

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Publication number
CN115427615A
CN115427615A CN202180028870.8A CN202180028870A CN115427615A CN 115427615 A CN115427615 A CN 115427615A CN 202180028870 A CN202180028870 A CN 202180028870A CN 115427615 A CN115427615 A CN 115427615A
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CN
China
Prior art keywords
silicon carbide
single crystal
region
carbide region
main surface
Prior art date
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Pending
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CN202180028870.8A
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English (en)
Chinese (zh)
Inventor
境谷省吾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CN115427615A publication Critical patent/CN115427615A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/063—Heating of the substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202180028870.8A 2020-04-22 2021-03-03 碳化硅单晶和碳化硅单晶的制造方法 Pending CN115427615A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020075940 2020-04-22
JP2020-075940 2020-04-22
PCT/JP2021/008195 WO2021215120A1 (ja) 2020-04-22 2021-03-03 炭化珪素単結晶および炭化珪素単結晶の製造方法

Publications (1)

Publication Number Publication Date
CN115427615A true CN115427615A (zh) 2022-12-02

Family

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Family Applications (1)

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CN202180028870.8A Pending CN115427615A (zh) 2020-04-22 2021-03-03 碳化硅单晶和碳化硅单晶的制造方法

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US (1) US20230160103A1 (https=)
JP (1) JPWO2021215120A1 (https=)
CN (1) CN115427615A (https=)
WO (1) WO2021215120A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118461149A (zh) * 2024-07-09 2024-08-09 湖南三安半导体有限责任公司 籽晶及其制作方法、长晶工艺的多型率测试方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2023074174A1 (https=) * 2021-11-01 2023-05-04
US20250203985A1 (en) * 2022-06-02 2025-06-19 Sumitomo Electric Industries, Ltd. Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002308698A (ja) * 2001-04-06 2002-10-23 Denso Corp ＳｉＣ単結晶の製造方法
JP2008522943A (ja) * 2004-12-08 2008-07-03 クリー インコーポレイテッド 高品質で大きなサイズの炭化ケイ素結晶を製造するための方法
JP2014028757A (ja) * 2011-08-29 2014-02-13 Nippon Steel & Sumitomo Metal 炭化珪素単結晶インゴット及びそれから切り出した基板
JP2014114169A (ja) * 2012-12-06 2014-06-26 Sumitomo Electric Ind Ltd 炭化珪素結晶の製造方法
CN105780107A (zh) * 2014-12-18 2016-07-20 中国科学院物理研究所 提高碳化硅晶体生长质量的籽晶处理方法以及用于碳化硅晶体生长的方法
CN110592673A (zh) * 2018-12-14 2019-12-20 北京天科合达半导体股份有限公司 一种高品质的大尺寸碳化硅晶体生长方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4733485B2 (ja) * 2004-09-24 2011-07-27 昭和電工株式会社 炭化珪素単結晶成長用種結晶の製造方法、炭化珪素単結晶成長用種結晶、炭化珪素単結晶の製造方法、および炭化珪素単結晶
JP2015224169A (ja) * 2014-05-29 2015-12-14 住友電気工業株式会社 炭化珪素インゴットの製造方法
KR102068933B1 (ko) * 2019-07-11 2020-01-21 에스케이씨 주식회사 탄화규소 잉곳 성장용 분말 및 이를 이용한 탄화규소 잉곳의 제조방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002308698A (ja) * 2001-04-06 2002-10-23 Denso Corp ＳｉＣ単結晶の製造方法
JP2008522943A (ja) * 2004-12-08 2008-07-03 クリー インコーポレイテッド 高品質で大きなサイズの炭化ケイ素結晶を製造するための方法
JP2014028757A (ja) * 2011-08-29 2014-02-13 Nippon Steel & Sumitomo Metal 炭化珪素単結晶インゴット及びそれから切り出した基板
JP2014114169A (ja) * 2012-12-06 2014-06-26 Sumitomo Electric Ind Ltd 炭化珪素結晶の製造方法
CN105780107A (zh) * 2014-12-18 2016-07-20 中国科学院物理研究所 提高碳化硅晶体生长质量的籽晶处理方法以及用于碳化硅晶体生长的方法
CN110592673A (zh) * 2018-12-14 2019-12-20 北京天科合达半导体股份有限公司 一种高品质的大尺寸碳化硅晶体生长方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118461149A (zh) * 2024-07-09 2024-08-09 湖南三安半导体有限责任公司 籽晶及其制作方法、长晶工艺的多型率测试方法
CN118461149B (zh) * 2024-07-09 2024-11-22 湖南三安半导体有限责任公司 籽晶及其制作方法、长晶工艺的多型率测试方法

Also Published As

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JPWO2021215120A1 (https=) 2021-10-28
US20230160103A1 (en) 2023-05-25
WO2021215120A1 (ja) 2021-10-28

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