JPWO2021215120A1 - - Google Patents

Info

Publication number
JPWO2021215120A1
JPWO2021215120A1 JP2022516876A JP2022516876A JPWO2021215120A1 JP WO2021215120 A1 JPWO2021215120 A1 JP WO2021215120A1 JP 2022516876 A JP2022516876 A JP 2022516876A JP 2022516876 A JP2022516876 A JP 2022516876A JP WO2021215120 A1 JPWO2021215120 A1 JP WO2021215120A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022516876A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021215120A1 publication Critical patent/JPWO2021215120A1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/063—Heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2022516876A 2020-04-22 2021-03-03 Pending JPWO2021215120A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020075940 2020-04-22
PCT/JP2021/008195 WO2021215120A1 (ja) 2020-04-22 2021-03-03 炭化珪素単結晶および炭化珪素単結晶の製造方法

Publications (1)

Publication Number Publication Date
JPWO2021215120A1 true JPWO2021215120A1 (https=) 2021-10-28

Family

ID=78270571

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022516876A Pending JPWO2021215120A1 (https=) 2020-04-22 2021-03-03

Country Status (4)

Country Link
US (1) US20230160103A1 (https=)
JP (1) JPWO2021215120A1 (https=)
CN (1) CN115427615A (https=)
WO (1) WO2021215120A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2023074174A1 (https=) * 2021-11-01 2023-05-04
US20250203985A1 (en) * 2022-06-02 2025-06-19 Sumitomo Electric Industries, Ltd. Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device
CN118461149B (zh) * 2024-07-09 2024-11-22 湖南三安半导体有限责任公司 籽晶及其制作方法、长晶工艺的多型率测试方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002308698A (ja) * 2001-04-06 2002-10-23 Denso Corp ＳｉＣ単結晶の製造方法
JP2006117512A (ja) * 2004-09-24 2006-05-11 Showa Denko Kk 炭化珪素単結晶の製造方法とその方法によって成長した炭化珪素単結晶、単結晶インゴットおよび炭化珪素単結晶ウエーハ
JP2008522943A (ja) * 2004-12-08 2008-07-03 クリー インコーポレイテッド 高品質で大きなサイズの炭化ケイ素結晶を製造するための方法
JP2014028757A (ja) * 2011-08-29 2014-02-13 Nippon Steel & Sumitomo Metal 炭化珪素単結晶インゴット及びそれから切り出した基板
JP2014114169A (ja) * 2012-12-06 2014-06-26 Sumitomo Electric Ind Ltd 炭化珪素結晶の製造方法
JP2015224169A (ja) * 2014-05-29 2015-12-14 住友電気工業株式会社 炭化珪素インゴットの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105780107A (zh) * 2014-12-18 2016-07-20 中国科学院物理研究所 提高碳化硅晶体生长质量的籽晶处理方法以及用于碳化硅晶体生长的方法
CN110592673B (zh) * 2018-12-14 2020-09-25 北京天科合达半导体股份有限公司 一种高品质的大尺寸碳化硅晶体生长方法
KR102068933B1 (ko) * 2019-07-11 2020-01-21 에스케이씨 주식회사 탄화규소 잉곳 성장용 분말 및 이를 이용한 탄화규소 잉곳의 제조방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002308698A (ja) * 2001-04-06 2002-10-23 Denso Corp ＳｉＣ単結晶の製造方法
JP2006117512A (ja) * 2004-09-24 2006-05-11 Showa Denko Kk 炭化珪素単結晶の製造方法とその方法によって成長した炭化珪素単結晶、単結晶インゴットおよび炭化珪素単結晶ウエーハ
JP2008522943A (ja) * 2004-12-08 2008-07-03 クリー インコーポレイテッド 高品質で大きなサイズの炭化ケイ素結晶を製造するための方法
JP2014028757A (ja) * 2011-08-29 2014-02-13 Nippon Steel & Sumitomo Metal 炭化珪素単結晶インゴット及びそれから切り出した基板
JP2014114169A (ja) * 2012-12-06 2014-06-26 Sumitomo Electric Ind Ltd 炭化珪素結晶の製造方法
JP2015224169A (ja) * 2014-05-29 2015-12-14 住友電気工業株式会社 炭化珪素インゴットの製造方法

Also Published As

Publication number Publication date
CN115427615A (zh) 2022-12-02
US20230160103A1 (en) 2023-05-25
WO2021215120A1 (ja) 2021-10-28

Similar Documents

Publication Publication Date Title
BR112023005462A2 (https=)
BR112023012656A2 (https=)
BR112021014123A2 (https=)
BR112023009656A2 (https=)
BR112022009896A2 (https=)
BR112021017747A2 (https=)
JPWO2021215120A1 (https=)
BR112022024743A2 (https=)
BR112022026905A2 (https=)
JPWO2023074174A1 (https=)
BR112023011738A2 (https=)
BR112023004146A2 (https=)
BR112023006729A2 (https=)
BR102021018859A2 (https=)
BR102021015500A2 (https=)
BR112023016292A2 (https=)
BR112023011610A2 (https=)
BR112023011539A2 (https=)
BR112023008976A2 (https=)
BR102021020147A2 (https=)
BR102021018926A2 (https=)
BR102021018167A2 (https=)
BR102021017576A2 (https=)
BR102021016837A2 (https=)
BR102021016551A2 (https=)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20231023

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20241224

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20250214

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250414

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20250729