CN115346988B - 一种晶体管、3d存储器及其制备方法、电子设备 - Google Patents

一种晶体管、3d存储器及其制备方法、电子设备 Download PDF

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CN115346988B
CN115346988B CN202211270027.3A CN202211270027A CN115346988B CN 115346988 B CN115346988 B CN 115346988B CN 202211270027 A CN202211270027 A CN 202211270027A CN 115346988 B CN115346988 B CN 115346988B
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substrate
gate
channel
transistor
memory
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CN115346988A (zh
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戴瑾
余泳
梁静
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Beijing Superstring Academy of Memory Technology
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Beijing Superstring Academy of Memory Technology
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Priority to CN202211270027.3A priority Critical patent/CN115346988B/zh
Publication of CN115346988A publication Critical patent/CN115346988A/zh
Priority to PCT/CN2022/137325 priority patent/WO2024082395A1/zh
Priority to EP22955193.2A priority patent/EP4380329A4/en
Priority to JP2023548807A priority patent/JP2025534922A/ja
Priority to KR1020237035880A priority patent/KR20250093445A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0318—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] of vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
CN202211270027.3A 2022-10-18 2022-10-18 一种晶体管、3d存储器及其制备方法、电子设备 Active CN115346988B (zh)

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Application Number Priority Date Filing Date Title
CN202211270027.3A CN115346988B (zh) 2022-10-18 2022-10-18 一种晶体管、3d存储器及其制备方法、电子设备
PCT/CN2022/137325 WO2024082395A1 (zh) 2022-10-18 2022-12-07 晶体管、3d存储器及其制造方法、电子设备
EP22955193.2A EP4380329A4 (en) 2022-10-18 2022-12-07 TRANSISTOR, 3D MEMORY AND ITS MANUFACTURING METHOD, ELECTRONIC DEVICE
JP2023548807A JP2025534922A (ja) 2022-10-18 2022-12-07 トランジスタ、３ｄメモリ及びその製造方法、電子装置
KR1020237035880A KR20250093445A (ko) 2022-10-18 2022-12-07 트랜지스터, 3d 메모리 및 그 제조 방법, 전자 장비
US18/304,219 US12328863B2 (en) 2022-10-18 2023-04-20 Transistor, 3D memory and manufacturing method therefor, and electronic device

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CN202211270027.3A CN115346988B (zh) 2022-10-18 2022-10-18 一种晶体管、3d存储器及其制备方法、电子设备

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US (1) US12328863B2 (enExample)
EP (1) EP4380329A4 (enExample)
JP (1) JP2025534922A (enExample)
KR (1) KR20250093445A (enExample)
CN (1) CN115346988B (enExample)
WO (1) WO2024082395A1 (enExample)

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US20240381626A1 (en) * 2023-03-24 2024-11-14 Beijing Superstring Academy Of Memory Technology Memory, method for manufacturing memory, and electronic device

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CN115346988B (zh) * 2022-10-18 2023-01-24 北京超弦存储器研究院 一种晶体管、3d存储器及其制备方法、电子设备
CN117425352A (zh) * 2022-12-19 2024-01-19 北京超弦存储器研究院 半导体器件、电子设备
CN115835626B (zh) * 2022-12-22 2024-04-09 北京超弦存储器研究院 3d堆叠的半导体器件、3d存储器及其制备方法、电子设备
CN117425337B (zh) * 2022-12-22 2026-05-26 北京超弦存储器研究院 一种3d存储器及其制备方法、电子设备
CN115988875B (zh) * 2023-01-30 2023-09-05 北京超弦存储器研究院 一种3d堆叠的半导体器件及其制造方法、电子设备
CN118524698A (zh) * 2023-02-20 2024-08-20 北京超弦存储器研究院 3d存储器及其制造方法、电子设备
CN118540934A (zh) * 2023-02-23 2024-08-23 北京超弦存储器研究院 一种3d堆叠的半导体器件及其制造方法、电子设备
CN116347889B (zh) * 2023-03-14 2024-01-12 北京超弦存储器研究院 存储单元、存储器、存储器的制备方法及电子设备
CN118742012B (zh) * 2023-03-28 2025-09-23 北京超弦存储器研究院 存储器及其制造方法、电子设备
CN116367537B (zh) * 2023-03-28 2024-04-26 北京超弦存储器研究院 一种3d堆叠的半导体器件及其制造方法、电子设备
CN118742019B (zh) * 2023-03-31 2025-08-05 北京超弦存储器研究院 存储器及其制造方法、电子设备
CN116322041B (zh) * 2023-04-13 2023-11-24 北京超弦存储器研究院 存储器及其制造方法、电子设备
CN116367539B (zh) * 2023-04-20 2024-01-19 北京超弦存储器研究院 半导体器件、存储器及其制备方法、电子设备
CN116209352B (zh) * 2023-04-27 2023-07-18 北京超弦存储器研究院 半导体器件及其制造方法、存储器、电子设备
CN119317099B (zh) * 2023-07-06 2025-10-03 长鑫存储技术有限公司 存储单元、存储器及其制备方法
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US12696442B2 (en) * 2023-03-24 2026-07-28 Beijing Superstrig Academy Of Memory Technology Memory, and method for manufacturing memory

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EP4380329A4 (en) 2025-07-30
KR20250093445A (ko) 2025-06-24
US12328863B2 (en) 2025-06-10
US20240130106A1 (en) 2024-04-18
JP2025534922A (ja) 2025-10-22
EP4380329A1 (en) 2024-06-05
WO2024082395A1 (zh) 2024-04-25
CN115346988A (zh) 2022-11-15

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