KR20250093445A - 트랜지스터, 3d 메모리 및 그 제조 방법, 전자 장비 - Google Patents
트랜지스터, 3d 메모리 및 그 제조 방법, 전자 장비 Download PDFInfo
- Publication number
- KR20250093445A KR20250093445A KR1020237035880A KR20237035880A KR20250093445A KR 20250093445 A KR20250093445 A KR 20250093445A KR 1020237035880 A KR1020237035880 A KR 1020237035880A KR 20237035880 A KR20237035880 A KR 20237035880A KR 20250093445 A KR20250093445 A KR 20250093445A
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- KR
- South Korea
- Prior art keywords
- substrate
- memory
- layer
- gate
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0318—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] of vertical TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/482—Bit lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/488—Word lines
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211270027.3 | 2022-10-18 | ||
| CN202211270027.3A CN115346988B (zh) | 2022-10-18 | 2022-10-18 | 一种晶体管、3d存储器及其制备方法、电子设备 |
| PCT/CN2022/137325 WO2024082395A1 (zh) | 2022-10-18 | 2022-12-07 | 晶体管、3d存储器及其制造方法、电子设备 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20250093445A true KR20250093445A (ko) | 2025-06-24 |
Family
ID=83957189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237035880A Pending KR20250093445A (ko) | 2022-10-18 | 2022-12-07 | 트랜지스터, 3d 메모리 및 그 제조 방법, 전자 장비 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12328863B2 (enExample) |
| EP (1) | EP4380329A4 (enExample) |
| JP (1) | JP2025534922A (enExample) |
| KR (1) | KR20250093445A (enExample) |
| CN (1) | CN115346988B (enExample) |
| WO (1) | WO2024082395A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115346988B (zh) * | 2022-10-18 | 2023-01-24 | 北京超弦存储器研究院 | 一种晶体管、3d存储器及其制备方法、电子设备 |
| CN117425352A (zh) * | 2022-12-19 | 2024-01-19 | 北京超弦存储器研究院 | 半导体器件、电子设备 |
| CN115835626B (zh) * | 2022-12-22 | 2024-04-09 | 北京超弦存储器研究院 | 3d堆叠的半导体器件、3d存储器及其制备方法、电子设备 |
| CN117425337B (zh) * | 2022-12-22 | 2026-05-26 | 北京超弦存储器研究院 | 一种3d存储器及其制备方法、电子设备 |
| CN115988875B (zh) * | 2023-01-30 | 2023-09-05 | 北京超弦存储器研究院 | 一种3d堆叠的半导体器件及其制造方法、电子设备 |
| CN118524698A (zh) * | 2023-02-20 | 2024-08-20 | 北京超弦存储器研究院 | 3d存储器及其制造方法、电子设备 |
| CN118540934A (zh) * | 2023-02-23 | 2024-08-23 | 北京超弦存储器研究院 | 一种3d堆叠的半导体器件及其制造方法、电子设备 |
| CN116347889B (zh) * | 2023-03-14 | 2024-01-12 | 北京超弦存储器研究院 | 存储单元、存储器、存储器的制备方法及电子设备 |
| CN115996570B (zh) * | 2023-03-24 | 2023-06-16 | 北京超弦存储器研究院 | 存储器、存储器的制作方法及电子设备 |
| CN118742012B (zh) * | 2023-03-28 | 2025-09-23 | 北京超弦存储器研究院 | 存储器及其制造方法、电子设备 |
| CN116367537B (zh) * | 2023-03-28 | 2024-04-26 | 北京超弦存储器研究院 | 一种3d堆叠的半导体器件及其制造方法、电子设备 |
| CN118742019B (zh) * | 2023-03-31 | 2025-08-05 | 北京超弦存储器研究院 | 存储器及其制造方法、电子设备 |
| CN116322041B (zh) * | 2023-04-13 | 2023-11-24 | 北京超弦存储器研究院 | 存储器及其制造方法、电子设备 |
| CN116367539B (zh) * | 2023-04-20 | 2024-01-19 | 北京超弦存储器研究院 | 半导体器件、存储器及其制备方法、电子设备 |
| CN116209352B (zh) * | 2023-04-27 | 2023-07-18 | 北京超弦存储器研究院 | 半导体器件及其制造方法、存储器、电子设备 |
| CN119317099B (zh) * | 2023-07-06 | 2025-10-03 | 长鑫存储技术有限公司 | 存储单元、存储器及其制备方法 |
| US12666678B2 (en) * | 2023-12-04 | 2026-06-23 | International Business Machines Corporation | Stacked transistor backside contact formation |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100574317B1 (ko) * | 2004-02-19 | 2006-04-26 | 삼성전자주식회사 | 게이트 구조물, 이를 갖는 반도체 장치 및 그 형성 방법 |
| US7742328B2 (en) * | 2007-06-15 | 2010-06-22 | Grandis, Inc. | Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistors |
| KR102401865B1 (ko) * | 2017-06-29 | 2022-05-25 | 마이크론 테크놀로지, 인크 | 절연 재료 및 메모리 셀의 수직 교번하는 티어를 포함하는 메모리 어레이 및 트랜지스터 및 커패시터를 개별적으로 포함하는 메모리 셀을 포함하는 메모리 어레이를 형성하는 방법 |
| CN109309122B (zh) * | 2018-09-17 | 2022-02-01 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
| KR102674883B1 (ko) * | 2018-12-21 | 2024-06-14 | 에스케이하이닉스 주식회사 | 적층된 셀 트랜지스터들을 포함하는 비휘발성 메모리 소자 및 상기 비휘발성 메모리 소자의 동작 방법 |
| KR102847704B1 (ko) * | 2019-10-08 | 2025-08-21 | 삼성전자주식회사 | 반도체 메모리 소자 및 그의 제조 방법 |
| US11374057B2 (en) * | 2020-06-23 | 2022-06-28 | Taiwan Semiconductor Manufacturing Company Limited | Vertical metal oxide semiconductor channel selector transistor and methods of forming the same |
| US11329051B2 (en) | 2020-08-28 | 2022-05-10 | Micron Technology, Inc. | Gate dielectric repair on three-node access device formation for vertical three-dimensional (3D) memory |
| KR102967100B1 (ko) * | 2020-10-16 | 2026-05-20 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법 |
| CN114334980B (zh) | 2021-11-17 | 2026-03-20 | 中国科学院微电子研究所 | 一种基于薄膜晶体管的无电容dram单元结构及制造方法 |
| CN114446963B (zh) | 2021-12-01 | 2025-06-06 | 北京超弦存储器研究院 | 半导体存储单元结构、半导体存储器及其制备方法、应用 |
| CN114023744B (zh) * | 2022-01-10 | 2022-03-25 | 长鑫存储技术有限公司 | 一种半导体结构、半导体结构的制备方法和半导体存储器 |
| CN114709211B (zh) * | 2022-04-02 | 2022-11-15 | 北京超弦存储器研究院 | 动态存储器及其制作、读写方法、电子设备、存储电路 |
| CN114864583A (zh) * | 2022-05-12 | 2022-08-05 | 中国科学院微电子研究所 | 一种无电容dram单元结构及制造方法 |
| CN115020480B (zh) * | 2022-05-31 | 2026-07-24 | 长鑫存储技术有限公司 | 半导体结构 |
| CN115346988B (zh) * | 2022-10-18 | 2023-01-24 | 北京超弦存储器研究院 | 一种晶体管、3d存储器及其制备方法、电子设备 |
| CN115346987B (zh) * | 2022-10-18 | 2023-01-10 | 北京超弦存储器研究院 | 一种存储单元、3d存储器及其制备方法、电子设备 |
-
2022
- 2022-10-18 CN CN202211270027.3A patent/CN115346988B/zh active Active
- 2022-12-07 KR KR1020237035880A patent/KR20250093445A/ko active Pending
- 2022-12-07 EP EP22955193.2A patent/EP4380329A4/en active Pending
- 2022-12-07 WO PCT/CN2022/137325 patent/WO2024082395A1/zh not_active Ceased
- 2022-12-07 JP JP2023548807A patent/JP2025534922A/ja active Pending
-
2023
- 2023-04-20 US US18/304,219 patent/US12328863B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP4380329A4 (en) | 2025-07-30 |
| CN115346988B (zh) | 2023-01-24 |
| US12328863B2 (en) | 2025-06-10 |
| US20240130106A1 (en) | 2024-04-18 |
| JP2025534922A (ja) | 2025-10-22 |
| EP4380329A1 (en) | 2024-06-05 |
| WO2024082395A1 (zh) | 2024-04-25 |
| CN115346988A (zh) | 2022-11-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| E13 | Pre-grant limitation requested |
Free format text: ST27 STATUS EVENT CODE: A-2-3-E10-E13-LIM-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
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| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
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| P11 | Amendment of application requested |
Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
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| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
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| D21 | Rejection of application intended |
Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE) |
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| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |