CN115280474A - 结构体的制造方法及结构体 - Google Patents

结构体的制造方法及结构体 Download PDF

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Publication number
CN115280474A
CN115280474A CN202180021056.3A CN202180021056A CN115280474A CN 115280474 A CN115280474 A CN 115280474A CN 202180021056 A CN202180021056 A CN 202180021056A CN 115280474 A CN115280474 A CN 115280474A
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CN
China
Prior art keywords
fine uneven
substrate
mask
manufacturing
uneven structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180021056.3A
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English (en)
Chinese (zh)
Inventor
梅泽朋一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
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Fujifilm Corp
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Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of CN115280474A publication Critical patent/CN115280474A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/508—Rigid containers without fluid transport within
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6534—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2200/00—Solutions for specific problems relating to chemical or physical laboratory apparatus
    • B01L2200/12—Specific details about manufacturing devices

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  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Hematology (AREA)
  • Clinical Laboratory Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
CN202180021056.3A 2020-03-25 2021-02-10 结构体的制造方法及结构体 Pending CN115280474A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020055019 2020-03-25
JP2020-055019 2020-03-25
PCT/JP2021/005058 WO2021192696A1 (ja) 2020-03-25 2021-02-10 構造体の製造方法及び構造体

Publications (1)

Publication Number Publication Date
CN115280474A true CN115280474A (zh) 2022-11-01

Family

ID=77890040

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180021056.3A Pending CN115280474A (zh) 2020-03-25 2021-02-10 结构体的制造方法及结构体

Country Status (4)

Country Link
US (1) US12518974B2 (https=)
JP (1) JP7371225B2 (https=)
CN (1) CN115280474A (https=)
WO (1) WO2021192696A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015059977A (ja) * 2013-09-17 2015-03-30 富士フイルム株式会社 透明微細凹凸構造体の製造方法
US20160114502A1 (en) * 2014-10-24 2016-04-28 Samsung Display Co., Ltd. Method of manufacturing mold and method of manufacturing polarizer
WO2016163510A1 (ja) * 2015-04-09 2016-10-13 王子ホールディングス株式会社 マスク付基板、および、凹凸構造付基板の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007005528A (ja) 2005-06-23 2007-01-11 Toyota Motor Corp トレンチ構造を有する半導体装置およびその製造方法
JP2009128538A (ja) 2007-11-21 2009-06-11 Panasonic Corp 反射防止構造体の製造方法
JP2009206339A (ja) * 2008-02-28 2009-09-10 Hoya Corp インプリントモールド用マスクブランク及びインプリントモールドの製造方法
JP5797133B2 (ja) 2012-03-07 2015-10-21 富士フイルム株式会社 マスターモールドの製造方法およびモールドの製造方法並びにそれらに使用される表面加工方法
JP6002427B2 (ja) 2012-04-19 2016-10-05 旭化成株式会社 Ｌｅｄ用基板及びその製造方法
JP6489483B2 (ja) * 2016-03-09 2019-03-27 パナソニックＩｐマネジメント株式会社 プラズマ処理方法
JP7255965B2 (ja) 2017-08-24 2023-04-11 日機装株式会社 半導体発光素子の製造方法
JP2019040039A (ja) 2017-08-24 2019-03-14 キヤノン株式会社 構造体の製造方法、加工方法、および光学部品
JP6819546B2 (ja) * 2017-11-13 2021-01-27 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
JP7095313B2 (ja) 2018-03-05 2022-07-05 大日本印刷株式会社 描画データ生成装置、レジストパターンの形成方法及び凹凸構造体の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015059977A (ja) * 2013-09-17 2015-03-30 富士フイルム株式会社 透明微細凹凸構造体の製造方法
US20160114502A1 (en) * 2014-10-24 2016-04-28 Samsung Display Co., Ltd. Method of manufacturing mold and method of manufacturing polarizer
WO2016163510A1 (ja) * 2015-04-09 2016-10-13 王子ホールディングス株式会社 マスク付基板、および、凹凸構造付基板の製造方法

Also Published As

Publication number Publication date
WO2021192696A1 (ja) 2021-09-30
JPWO2021192696A1 (https=) 2021-09-30
US12518974B2 (en) 2026-01-06
JP7371225B2 (ja) 2023-10-30
US20220415663A1 (en) 2022-12-29

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