JP7371225B2 - 構造体の製造方法及び構造体 - Google Patents
構造体の製造方法及び構造体 Download PDFInfo
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- JP7371225B2 JP7371225B2 JP2022509383A JP2022509383A JP7371225B2 JP 7371225 B2 JP7371225 B2 JP 7371225B2 JP 2022509383 A JP2022509383 A JP 2022509383A JP 2022509383 A JP2022509383 A JP 2022509383A JP 7371225 B2 JP7371225 B2 JP 7371225B2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 239000011347 resin Substances 0.000 claims description 17
- 229920005989 resin Polymers 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 230000001788 irregular Effects 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052801 chlorine Inorganic materials 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
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- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 4
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 241000237503 Pectinidae Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000012742 biochemical analysis Methods 0.000 description 1
- 238000005842 biochemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000013461 design Methods 0.000 description 1
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- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
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- 239000010419 fine particle Substances 0.000 description 1
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- 238000007654 immersion Methods 0.000 description 1
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- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- 150000002978 peroxides Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- 235000020637 scallop Nutrition 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
- B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
- B01L3/508—Containers for the purpose of retaining a material to be analysed, e.g. test tubes rigid containers not provided for above
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
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Description
例えば、特許第5797133号公報には、基板の表面に微細凹凸を有するベーマイト層を設け、そのベーマイト層をマスクとしてエッチングすることで、基材の表面に微細凹凸構造を形成する手法が開示されている。
マスク側から基板の表面をエッチングしてマスクの開口パターンに応じた、微細凹凸構造の平均周期よりも大きい開口を有する凹部であって、微細凹凸構造の凹凸差の2倍以上の深さを有する凹部を形成するドライエッチング工程と、
ドライエッチング工程後に前記マスクを除去するマスク除去工程とを含む。
基板10の材質には特に限定ないが、例えば、シリコンあるいはシリコン化合物を用いることができる。シリコンあるいはシリコン化合物は、エッチング選択比を制御しやすいため好ましい。シリコン化合物としては、酸化シリコン及び窒化シリコンなどが挙げられる。具体的には、基板10として、シリコンウエハ及び石英ガラスなどを用いることができる。
マスク形成工程における、マスク42を形成する方法及びマスク材料は特に限定されないが、マスク42が有機材料で構成されていることが好ましい。有機材料を用いれば、容易な方法で所望の開口パターンを有するマスク42を形成することができる。以下、有機材料でマスク42を形成する方法を簡単に説明する。
ドライエッチング工程においては、反応性イオンエッチングが好ましい。マスク42に対するエッチングレートよりも基板10に対するエッチングレートを大きくするために、基板10に対するエッチング効率のよいエッチングガスG1を用いることが好ましい。具体的には、例えば基板にシリコンを用いる場合は、フッ素系ガス又は塩素系ガスが挙げられる。フッ素系ガスとしては、例えばトリフルオロメタン(CFH3)あるいは六フッ化硫黄(SF6)、塩素系ガスとしては、例えば、塩素(Cl2)を用いることができる。
マスク除去は、ドライエッチング工程又は硫酸H2SO4と過酸化水素H2O2の混合物である硫酸過水、例えば、関東化学株式会社製SH-303を用いた洗浄工程を含むことが好ましい。
上記製造方法においては、微細凹凸構造30を備えた基板を用意する工程として、表面が平らな被加工基板9の表面に微細凹凸構造30を形成する微細凹凸構造形成工程を含んでもよい。微細凹凸構造形成工程は、一例として、被加工基板の表面にアルミニウムを含む薄膜を形成する工程と、アルミニウムを含む薄膜を温水処理することによりアルミナの水和物を含む微細凹凸層に変化させる工程と、微細凹凸層側から被加工基板の表面をエッチングする工程と、微細凹凸層を除去する工程とを含む。本例の手順を、図11を参照して以下に説明する。
本明細書に記載された全ての文献、特許出願、および技術規格は、個々の文献、特許出願、および技術規格が参照により取り込まれることが具体的かつ個々に記された場合と同程度に、本明細書中に参照により取り込まれる。
Claims (14)
- 表面に1μm以下の平均周期を有する微細凹凸構造を備えた基板の前記微細凹凸構造上に、開口パターンを有するマスクを形成するマスク形成工程と、
前記マスク側から前記基板の表面をエッチングして前記マスクの前記開口パターンに応じた、前記微細凹凸構造の前記平均周期よりも大きい開口を有する凹部であって、前記微細凹凸構造の凹凸差の2倍以上の深さを有する凹部を形成するドライエッチング工程と、
前記ドライエッチング工程後に前記マスクを除去するマスク除去工程とを含む、
前記凹部と前記凹部の周縁に前記微細凹凸構造とを備えた構造体の製造方法。 - 前記微細凹凸構造が不規則な構造である、請求項1に記載の構造体の製造方法。
- 前記ドライエッチング工程において形成する前記凹部は前記基板を貫通する貫通孔である、請求項1又は2に記載の構造体の製造方法。
- 前記ドライエッチング工程において、前記凹部の内壁面の少なくとも一部に前記凹部の深さ方向に沿った筋状の溝が形成される、請求項1から3のいずれか1項に記載の構造体の製造方法。
- 前記ドライエッチング工程において用いるエッチングガスが、フッ素系ガス又は塩素系ガスを含む、請求項1から4のいずれか1項に記載の構造体の製造方法。
- 前記ドライエッチング工程において、エッチングガスとエッチング保護ガスとを交互に使用する、請求項1から5のいずれか1項に記載の構造体の製造方法。
- 前記マスク形成工程が、フォトレジストの塗布工程、前記フォトレジストの露光工程及び現像工程を含む請求項1から6のいずれか1項に記載の構造体の製造方法。
- 前記マスク形成工程が、樹脂層の塗布工程及び前記樹脂層へのパターン転写工程を含む請求項1から6のいずれか1項に記載の構造体の製造方法。
- 前記マスク除去工程が、ドライエッチング工程又は硫酸過水を用いた洗浄工程を含む、請求項1から8のいずれか1項に記載の構造体の製造方法。
- 前記基板の表面に前記微細凹凸構造を形成する微細凹凸構造形成工程を含み、
前記微細凹凸構造形成工程が、前記基板の表面にアルミニウムを含む薄膜を形成する工程と、前記アルミニウムを含む薄膜を温水処理することによりアルミナの水和物を含む微細凹凸層に変化させる工程と、前記微細凹凸層側から、前記基板の表面をエッチングする工程と、前記微細凹凸層を除去する工程とを含む、請求項1から9のいずれか1項に記載の構造体の製造方法。 - 前記基板が、シリコン基板又はシリコン化合物基板である、請求項1から10のいずれか1項に記載の構造体の製造方法。
- 基板と、
前記基板の表面に形成された凹部と、
前記基板の表面にのみ、かつ、前記表面のうち少なくとも前記凹部の周縁に形成された1μm以下の平均周期を有する微細凹凸構造とを備え、
前記凹部の開口が、前記微細凹凸構造の平均周期よりも大きい前記凹部と構造体。 - 前記微細凹凸構造が不規則な構造である、請求項12に記載の構造体。
- 前記凹部は、内壁面に前記不規則な構造の前記微細凹凸構造の凹凸に応じ、かつ深さ方向に沿った筋状の溝を有する、請求項13に記載の構造体。
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2009206339A (ja) | 2008-02-28 | 2009-09-10 | Hoya Corp | インプリントモールド用マスクブランク及びインプリントモールドの製造方法 |
JP2013222925A (ja) | 2012-04-19 | 2013-10-28 | Asahi Kasei Corp | Led用基板及びその製造方法 |
JP2015059977A (ja) | 2013-09-17 | 2015-03-30 | 富士フイルム株式会社 | 透明微細凹凸構造体の製造方法 |
JP2017162959A (ja) | 2016-03-09 | 2017-09-14 | パナソニックIpマネジメント株式会社 | プラズマ処理方法 |
JP2019040980A (ja) | 2017-08-24 | 2019-03-14 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
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---|---|---|---|---|
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JP2009206339A (ja) | 2008-02-28 | 2009-09-10 | Hoya Corp | インプリントモールド用マスクブランク及びインプリントモールドの製造方法 |
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JP2015059977A (ja) | 2013-09-17 | 2015-03-30 | 富士フイルム株式会社 | 透明微細凹凸構造体の製造方法 |
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