JP7371225B2 - 構造体の製造方法及び構造体 - Google Patents

構造体の製造方法及び構造体 Download PDF

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Publication number
JP7371225B2
JP7371225B2 JP2022509383A JP2022509383A JP7371225B2 JP 7371225 B2 JP7371225 B2 JP 7371225B2 JP 2022509383 A JP2022509383 A JP 2022509383A JP 2022509383 A JP2022509383 A JP 2022509383A JP 7371225 B2 JP7371225 B2 JP 7371225B2
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Japan
Prior art keywords
substrate
recess
mask
fine
manufacturing
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JP2022509383A
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English (en)
Japanese (ja)
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JPWO2021192696A1 (https=
Inventor
朋一 梅澤
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Fujifilm Corp
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Fujifilm Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/508—Rigid containers without fluid transport within
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6534—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2200/00—Solutions for specific problems relating to chemical or physical laboratory apparatus
    • B01L2200/12—Specific details about manufacturing devices

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  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Hematology (AREA)
  • Clinical Laboratory Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
JP2022509383A 2020-03-25 2021-02-10 構造体の製造方法及び構造体 Active JP7371225B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020055019 2020-03-25
JP2020055019 2020-03-25
PCT/JP2021/005058 WO2021192696A1 (ja) 2020-03-25 2021-02-10 構造体の製造方法及び構造体

Publications (2)

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JPWO2021192696A1 JPWO2021192696A1 (https=) 2021-09-30
JP7371225B2 true JP7371225B2 (ja) 2023-10-30

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JP2022509383A Active JP7371225B2 (ja) 2020-03-25 2021-02-10 構造体の製造方法及び構造体

Country Status (4)

Country Link
US (1) US12518974B2 (https=)
JP (1) JP7371225B2 (https=)
CN (1) CN115280474A (https=)
WO (1) WO2021192696A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007005528A (ja) 2005-06-23 2007-01-11 Toyota Motor Corp トレンチ構造を有する半導体装置およびその製造方法
JP2009206339A (ja) 2008-02-28 2009-09-10 Hoya Corp インプリントモールド用マスクブランク及びインプリントモールドの製造方法
JP2013222925A (ja) 2012-04-19 2013-10-28 Asahi Kasei Corp Ｌｅｄ用基板及びその製造方法
JP2015059977A (ja) 2013-09-17 2015-03-30 富士フイルム株式会社 透明微細凹凸構造体の製造方法
JP2017162959A (ja) 2016-03-09 2017-09-14 パナソニックＩｐマネジメント株式会社 プラズマ処理方法
JP2019040980A (ja) 2017-08-24 2019-03-14 日機装株式会社 半導体発光素子および半導体発光素子の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009128538A (ja) 2007-11-21 2009-06-11 Panasonic Corp 反射防止構造体の製造方法
JP5797133B2 (ja) 2012-03-07 2015-10-21 富士フイルム株式会社 マスターモールドの製造方法およびモールドの製造方法並びにそれらに使用される表面加工方法
KR20160049162A (ko) * 2014-10-24 2016-05-09 삼성디스플레이 주식회사 몰드의 제조 방법 및 편광 소자의 제조 방법
CN107431010B (zh) * 2015-04-09 2021-05-07 王子控股株式会社 具有掩模之基板、以及具有凹凸构造之基板的制造方法
JP2019040039A (ja) 2017-08-24 2019-03-14 キヤノン株式会社 構造体の製造方法、加工方法、および光学部品
JP6819546B2 (ja) * 2017-11-13 2021-01-27 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
JP7095313B2 (ja) 2018-03-05 2022-07-05 大日本印刷株式会社 描画データ生成装置、レジストパターンの形成方法及び凹凸構造体の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007005528A (ja) 2005-06-23 2007-01-11 Toyota Motor Corp トレンチ構造を有する半導体装置およびその製造方法
JP2009206339A (ja) 2008-02-28 2009-09-10 Hoya Corp インプリントモールド用マスクブランク及びインプリントモールドの製造方法
JP2013222925A (ja) 2012-04-19 2013-10-28 Asahi Kasei Corp Ｌｅｄ用基板及びその製造方法
JP2015059977A (ja) 2013-09-17 2015-03-30 富士フイルム株式会社 透明微細凹凸構造体の製造方法
JP2017162959A (ja) 2016-03-09 2017-09-14 パナソニックＩｐマネジメント株式会社 プラズマ処理方法
JP2019040980A (ja) 2017-08-24 2019-03-14 日機装株式会社 半導体発光素子および半導体発光素子の製造方法

Also Published As

Publication number Publication date
WO2021192696A1 (ja) 2021-09-30
JPWO2021192696A1 (https=) 2021-09-30
US12518974B2 (en) 2026-01-06
CN115280474A (zh) 2022-11-01
US20220415663A1 (en) 2022-12-29

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