CN115039516B - 等离子体生成装置 - Google Patents

等离子体生成装置 Download PDF

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Publication number
CN115039516B
CN115039516B CN202180012025.1A CN202180012025A CN115039516B CN 115039516 B CN115039516 B CN 115039516B CN 202180012025 A CN202180012025 A CN 202180012025A CN 115039516 B CN115039516 B CN 115039516B
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China
Prior art keywords
plasma
chamber
unit
gas
analysis
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CN202180012025.1A
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English (en)
Chinese (zh)
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CN115039516A (zh
Inventor
高桥直树
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Atonarp Corp
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Atonarp Corp
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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2431—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes using cylindrical electrodes, e.g. rotary drums
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H01J49/105—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation, Inductively Coupled Plasma [ICP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/26—Mass spectrometers or separator tubes
    • H01J49/34—Dynamic spectrometers
    • H01J49/42—Stability-of-path spectrometers, e.g. monopole, quadrupole, multipole, farvitrons
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/26—Mass spectrometers or separator tubes
    • H01J49/34—Dynamic spectrometers
    • H01J49/42—Stability-of-path spectrometers, e.g. monopole, quadrupole, multipole, farvitrons
    • H01J49/4205—Device types
    • H01J49/421—Mass filters, i.e. deviating unwanted ions without trapping
    • H01J49/4215—Quadrupole mass filters

Landscapes

  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Plasma Technology (AREA)
  • Manufacturing Of Tubular Articles Or Embedded Moulded Articles (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN202180012025.1A 2020-03-31 2021-03-29 等离子体生成装置 Active CN115039516B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020062862 2020-03-31
JP2020-062862 2020-03-31
PCT/JP2021/013168 WO2021200773A1 (ja) 2020-03-31 2021-03-29 プラズマ生成装置

Publications (2)

Publication Number Publication Date
CN115039516A CN115039516A (zh) 2022-09-09
CN115039516B true CN115039516B (zh) 2024-01-02

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ID=77929449

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180012025.1A Active CN115039516B (zh) 2020-03-31 2021-03-29 等离子体生成装置

Country Status (7)

Country Link
US (2) US11996278B2 (https=)
EP (1) EP4132228A4 (https=)
JP (3) JP7039096B2 (https=)
KR (1) KR102724709B1 (https=)
CN (1) CN115039516B (https=)
TW (1) TWI865755B (https=)
WO (1) WO2021200773A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115039516B (zh) * 2020-03-31 2024-01-02 Atonarp株式会社 等离子体生成装置
US20240355592A1 (en) * 2023-04-24 2024-10-24 Applied Materials, Inc. Uniform plasma processing with a linear plasma source

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5650618A (en) * 1995-11-30 1997-07-22 The Regents Of The University Of California Compact mass spectrometer for plasma discharge ion analysis
CN107039255A (zh) * 2015-11-17 2017-08-11 朗姆研究公司 通过电测量检测等离子体不稳定性的系统和方法

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JP3774525B2 (ja) * 1997-01-06 2006-05-17 株式会社アルバック プラズマ中の負イオン測定法及び装置
JP3769341B2 (ja) 1997-01-06 2006-04-26 株式会社アルバック エッチングプラズマにおける基板入射負イオンの分析法及び装置
JPH11158638A (ja) * 1997-11-25 1999-06-15 Kao Corp 炭素薄膜の製造方法
JP4221235B2 (ja) * 2003-03-05 2009-02-12 キヤノンアネルバ株式会社 イオン付着質量分析方法、負イオン計測方法、および質量分析装置
US7460225B2 (en) 2004-03-05 2008-12-02 Vassili Karanassios Miniaturized source devices for optical and mass spectrometry
JP4272646B2 (ja) 2005-08-24 2009-06-03 株式会社アルバック エッチング装置
JP4865532B2 (ja) * 2006-12-22 2012-02-01 株式会社アルバック 質量分析ユニット、及び質量分析ユニットの使用方法
JP5233131B2 (ja) * 2007-02-23 2013-07-10 株式会社Ｉｈｉ 浸炭装置及び浸炭方法
KR100891376B1 (ko) * 2007-03-21 2009-04-02 차동호 셀프 플라즈마 챔버와 결합하여 플라즈마 공정장치에서공정진행상태를 실시간으로 모니터하고 이상 여부를검출하는 복합센서
CN101680856A (zh) * 2007-05-15 2010-03-24 株式会社爱发科 质谱分析单元
KR100905128B1 (ko) * 2008-07-29 2009-06-30 주식회사 나노텍 셀프 플라즈마 챔버의 오염 방지 장치 및 방법
JP5758086B2 (ja) 2010-05-31 2015-08-05 学校法人トヨタ学園 誘導結合型マイクロプラズマ源及びこれを利用した装置
JP6087056B2 (ja) * 2012-01-06 2017-03-01 アジレント・テクノロジーズ・インクＡｇｉｌｅｎｔ Ｔｅｃｈｎｏｌｏｇｉｅｓ， Ｉｎｃ． 誘導結合プラズマｍｓ／ｍｓ型質量分析装置
JP5966212B2 (ja) 2012-02-07 2016-08-10 学校法人トヨタ学園 浮遊電極の一部がガス流路内部に面している誘導結合型マイクロプラズマ源およびこれを使用した装置
JP6341690B2 (ja) 2014-02-26 2018-06-13 学校法人トヨタ学園 浮遊電極がシールドされた誘導結合型マイクロプラズマ源
JP5759036B2 (ja) * 2014-03-06 2015-08-05 株式会社日立ハイテクノロジーズ 質量分析装置
JP2015204418A (ja) 2014-04-15 2015-11-16 株式会社東芝 プラズマ処理装置及びプラズマ処理方法
WO2015159714A1 (ja) * 2014-04-16 2015-10-22 株式会社日立ハイテクノロジーズ 質量分析装置および質量分析装置に用いられるカートリッジ
JP6518505B2 (ja) * 2015-05-12 2019-05-22 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6505027B2 (ja) 2016-01-04 2019-04-24 株式会社日立ハイテクノロジーズ 試料の離脱方法およびプラズマ処理装置
JP6703425B2 (ja) * 2016-03-23 2020-06-03 株式会社栗田製作所 プラズマ処理方法及びプラズマ処理装置
CA2972600A1 (en) 2017-07-07 2019-01-07 Teknoscan Systems Inc. Polarization dielectric discharge source for ims instrument
JP6888455B2 (ja) * 2017-07-21 2021-06-16 三菱ケミカル株式会社 ガスバリア性プラスチック容器の製造方法
KR102023705B1 (ko) * 2018-01-30 2019-09-20 한국기계연구원 공정 모니터링을 위한 플라즈마 반응기
KR102046637B1 (ko) * 2018-01-30 2019-11-19 한국기계연구원 공정 모니터링을 위한 플라즈마 반응기
CN115039516B (zh) * 2020-03-31 2024-01-02 Atonarp株式会社 等离子体生成装置
JP7343944B2 (ja) * 2021-01-29 2023-09-13 アトナープ株式会社 ガス分析装置および制御方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5650618A (en) * 1995-11-30 1997-07-22 The Regents Of The University Of California Compact mass spectrometer for plasma discharge ion analysis
CN107039255A (zh) * 2015-11-17 2017-08-11 朗姆研究公司 通过电测量检测等离子体不稳定性的系统和方法

Also Published As

Publication number Publication date
CN115039516A (zh) 2022-09-09
JP7602266B2 (ja) 2024-12-18
WO2021200773A1 (ja) 2021-10-07
JPWO2021200773A1 (https=) 2021-10-07
JP2022075719A (ja) 2022-05-18
KR102724709B1 (ko) 2024-10-30
TW202139286A (zh) 2021-10-16
US20240258092A1 (en) 2024-08-01
JP7039096B2 (ja) 2022-03-22
JP2025032173A (ja) 2025-03-11
US20230187195A1 (en) 2023-06-15
EP4132228A4 (en) 2024-05-15
US11996278B2 (en) 2024-05-28
KR20220123459A (ko) 2022-09-06
US12400849B2 (en) 2025-08-26
EP4132228A1 (en) 2023-02-08
TWI865755B (zh) 2024-12-11

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