KR102724709B1 - 플라즈마 생성 장치 - Google Patents
플라즈마 생성 장치 Download PDFInfo
- Publication number
- KR102724709B1 KR102724709B1 KR1020227027035A KR20227027035A KR102724709B1 KR 102724709 B1 KR102724709 B1 KR 102724709B1 KR 1020227027035 A KR1020227027035 A KR 1020227027035A KR 20227027035 A KR20227027035 A KR 20227027035A KR 102724709 B1 KR102724709 B1 KR 102724709B1
- Authority
- KR
- South Korea
- Prior art keywords
- plasma
- unit
- chamber
- gas
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 230000007246 mechanism Effects 0.000 claims abstract description 33
- 230000005684 electric field Effects 0.000 claims abstract description 8
- 238000004458 analytical method Methods 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 51
- 238000005070 sampling Methods 0.000 claims description 45
- 238000004868 gas analysis Methods 0.000 claims description 44
- 230000008569 process Effects 0.000 claims description 41
- 150000002500 ions Chemical class 0.000 claims description 22
- 238000012806 monitoring device Methods 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 50
- 238000005259 measurement Methods 0.000 description 19
- 230000006870 function Effects 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 241000894006 Bacteria Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 238000005040 ion trap Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2431—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes using cylindrical electrodes, e.g. rotary drums
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
- H01J49/105—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation, Inductively Coupled Plasma [ICP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/26—Mass spectrometers or separator tubes
- H01J49/34—Dynamic spectrometers
- H01J49/42—Stability-of-path spectrometers, e.g. monopole, quadrupole, multipole, farvitrons
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/26—Mass spectrometers or separator tubes
- H01J49/34—Dynamic spectrometers
- H01J49/42—Stability-of-path spectrometers, e.g. monopole, quadrupole, multipole, farvitrons
- H01J49/4205—Device types
- H01J49/421—Mass filters, i.e. deviating unwanted ions without trapping
- H01J49/4215—Quadrupole mass filters
Landscapes
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
- Plasma Technology (AREA)
- Manufacturing Of Tubular Articles Or Embedded Moulded Articles (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2020-062862 | 2020-03-31 | ||
| JP2020062862 | 2020-03-31 | ||
| PCT/JP2021/013168 WO2021200773A1 (ja) | 2020-03-31 | 2021-03-29 | プラズマ生成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20220123459A KR20220123459A (ko) | 2022-09-06 |
| KR102724709B1 true KR102724709B1 (ko) | 2024-10-30 |
Family
ID=77929449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020227027035A Active KR102724709B1 (ko) | 2020-03-31 | 2021-03-29 | 플라즈마 생성 장치 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US11996278B2 (https=) |
| EP (1) | EP4132228A4 (https=) |
| JP (3) | JP7039096B2 (https=) |
| KR (1) | KR102724709B1 (https=) |
| CN (1) | CN115039516B (https=) |
| TW (1) | TWI865755B (https=) |
| WO (1) | WO2021200773A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115039516B (zh) * | 2020-03-31 | 2024-01-02 | Atonarp株式会社 | 等离子体生成装置 |
| US20240355592A1 (en) * | 2023-04-24 | 2024-10-24 | Applied Materials, Inc. | Uniform plasma processing with a linear plasma source |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100905128B1 (ko) | 2008-07-29 | 2009-06-30 | 주식회사 나노텍 | 셀프 플라즈마 챔버의 오염 방지 장치 및 방법 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8813149D0 (en) * | 1988-06-03 | 1988-07-06 | Vg Instr Group | Mass spectrometer |
| US5650618A (en) | 1995-11-30 | 1997-07-22 | The Regents Of The University Of California | Compact mass spectrometer for plasma discharge ion analysis |
| JP3550457B2 (ja) | 1996-03-29 | 2004-08-04 | 株式会社アルバック | 浮遊電位基板入射イオンのエネルギー及び質量の分析法及び装置 |
| JP3774525B2 (ja) * | 1997-01-06 | 2006-05-17 | 株式会社アルバック | プラズマ中の負イオン測定法及び装置 |
| JP3769341B2 (ja) | 1997-01-06 | 2006-04-26 | 株式会社アルバック | エッチングプラズマにおける基板入射負イオンの分析法及び装置 |
| JPH11158638A (ja) * | 1997-11-25 | 1999-06-15 | Kao Corp | 炭素薄膜の製造方法 |
| JP4221235B2 (ja) * | 2003-03-05 | 2009-02-12 | キヤノンアネルバ株式会社 | イオン付着質量分析方法、負イオン計測方法、および質量分析装置 |
| US7460225B2 (en) | 2004-03-05 | 2008-12-02 | Vassili Karanassios | Miniaturized source devices for optical and mass spectrometry |
| JP4272646B2 (ja) | 2005-08-24 | 2009-06-03 | 株式会社アルバック | エッチング装置 |
| JP4865532B2 (ja) * | 2006-12-22 | 2012-02-01 | 株式会社アルバック | 質量分析ユニット、及び質量分析ユニットの使用方法 |
| JP5233131B2 (ja) * | 2007-02-23 | 2013-07-10 | 株式会社Ｉｈｉ | 浸炭装置及び浸炭方法 |
| KR100891376B1 (ko) * | 2007-03-21 | 2009-04-02 | 차동호 | 셀프 플라즈마 챔버와 결합하여 플라즈마 공정장치에서공정진행상태를 실시간으로 모니터하고 이상 여부를검출하는 복합센서 |
| CN101680856A (zh) * | 2007-05-15 | 2010-03-24 | 株式会社爱发科 | 质谱分析单元 |
| JP5758086B2 (ja) | 2010-05-31 | 2015-08-05 | 学校法人トヨタ学園 | 誘導結合型マイクロプラズマ源及びこれを利用した装置 |
| JP6087056B2 (ja) * | 2012-01-06 | 2017-03-01 | アジレント・テクノロジーズ・インクＡｇｉｌｅｎｔ Ｔｅｃｈｎｏｌｏｇｉｅｓ， Ｉｎｃ． | 誘導結合プラズマｍｓ／ｍｓ型質量分析装置 |
| JP5966212B2 (ja) | 2012-02-07 | 2016-08-10 | 学校法人トヨタ学園 | 浮遊電極の一部がガス流路内部に面している誘導結合型マイクロプラズマ源およびこれを使用した装置 |
| JP6341690B2 (ja) | 2014-02-26 | 2018-06-13 | 学校法人トヨタ学園 | 浮遊電極がシールドされた誘導結合型マイクロプラズマ源 |
| JP5759036B2 (ja) * | 2014-03-06 | 2015-08-05 | 株式会社日立ハイテクノロジーズ | 質量分析装置 |
| JP2015204418A (ja) | 2014-04-15 | 2015-11-16 | 株式会社東芝 | プラズマ処理装置及びプラズマ処理方法 |
| WO2015159714A1 (ja) * | 2014-04-16 | 2015-10-22 | 株式会社日立ハイテクノロジーズ | 質量分析装置および質量分析装置に用いられるカートリッジ |
| JP6518505B2 (ja) * | 2015-05-12 | 2019-05-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| US9824941B2 (en) * | 2015-11-17 | 2017-11-21 | Lam Research Corporation | Systems and methods for detection of plasma instability by electrical measurement |
| JP6505027B2 (ja) | 2016-01-04 | 2019-04-24 | 株式会社日立ハイテクノロジーズ | 試料の離脱方法およびプラズマ処理装置 |
| JP6703425B2 (ja) * | 2016-03-23 | 2020-06-03 | 株式会社栗田製作所 | プラズマ処理方法及びプラズマ処理装置 |
| CA2972600A1 (en) | 2017-07-07 | 2019-01-07 | Teknoscan Systems Inc. | Polarization dielectric discharge source for ims instrument |
| JP6888455B2 (ja) * | 2017-07-21 | 2021-06-16 | 三菱ケミカル株式会社 | ガスバリア性プラスチック容器の製造方法 |
| KR102023705B1 (ko) * | 2018-01-30 | 2019-09-20 | 한국기계연구원 | 공정 모니터링을 위한 플라즈마 반응기 |
| KR102046637B1 (ko) * | 2018-01-30 | 2019-11-19 | 한국기계연구원 | 공정 모니터링을 위한 플라즈마 반응기 |
| CN115039516B (zh) * | 2020-03-31 | 2024-01-02 | Atonarp株式会社 | 等离子体生成装置 |
| JP7343944B2 (ja) * | 2021-01-29 | 2023-09-13 | アトナープ株式会社 | ガス分析装置および制御方法 |
-
2021
- 2021-03-29 CN CN202180012025.1A patent/CN115039516B/zh active Active
- 2021-03-29 KR KR1020227027035A patent/KR102724709B1/ko active Active
- 2021-03-29 JP JP2021548210A patent/JP7039096B2/ja active Active
- 2021-03-29 EP EP21780358.4A patent/EP4132228A4/en active Pending
- 2021-03-29 US US17/912,226 patent/US11996278B2/en active Active
- 2021-03-29 WO PCT/JP2021/013168 patent/WO2021200773A1/ja not_active Ceased
- 2021-03-30 TW TW110111456A patent/TWI865755B/zh active
-
2022
- 2022-03-02 JP JP2022031497A patent/JP7602266B2/ja active Active
-
2024
- 2024-04-15 US US18/635,131 patent/US12400849B2/en active Active
- 2024-11-29 JP JP2024208234A patent/JP2025032173A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100905128B1 (ko) | 2008-07-29 | 2009-06-30 | 주식회사 나노텍 | 셀프 플라즈마 챔버의 오염 방지 장치 및 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115039516A (zh) | 2022-09-09 |
| JP7602266B2 (ja) | 2024-12-18 |
| WO2021200773A1 (ja) | 2021-10-07 |
| JPWO2021200773A1 (https=) | 2021-10-07 |
| JP2022075719A (ja) | 2022-05-18 |
| TW202139286A (zh) | 2021-10-16 |
| US20240258092A1 (en) | 2024-08-01 |
| JP7039096B2 (ja) | 2022-03-22 |
| CN115039516B (zh) | 2024-01-02 |
| JP2025032173A (ja) | 2025-03-11 |
| US20230187195A1 (en) | 2023-06-15 |
| EP4132228A4 (en) | 2024-05-15 |
| US11996278B2 (en) | 2024-05-28 |
| KR20220123459A (ko) | 2022-09-06 |
| US12400849B2 (en) | 2025-08-26 |
| EP4132228A1 (en) | 2023-02-08 |
| TWI865755B (zh) | 2024-12-11 |
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| PA0105 | International application |
Patent event date: 20220804 Patent event code: PA01051R01D Comment text: International Patent Application |
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| PG1501 | Laying open of application | ||
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Comment text: Notification of reason for refusal Patent event date: 20240216 Patent event code: PE09021S01D |
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| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20240820 |
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| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20241028 Patent event code: PR07011E01D |
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| PR1002 | Payment of registration fee |
Payment date: 20241028 End annual number: 3 Start annual number: 1 |
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| PG1601 | Publication of registration |