CN1149636C - 晶片和基底的加工方法和装置及传送该晶片和基底的装置 - Google Patents

晶片和基底的加工方法和装置及传送该晶片和基底的装置 Download PDF

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Publication number
CN1149636C
CN1149636C CNB951091980A CN95109198A CN1149636C CN 1149636 C CN1149636 C CN 1149636C CN B951091980 A CNB951091980 A CN B951091980A CN 95109198 A CN95109198 A CN 95109198A CN 1149636 C CN1149636 C CN 1149636C
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CN
China
Prior art keywords
wafer
substrate
processing
wafers
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB951091980A
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English (en)
Chinese (zh)
Other versions
CN1118934A (zh
Inventor
�Ҵ�ֱ��
岩村直行
Ҳ
森义明
����һ
宫下武
宫川拓也
汤田坂一夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
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Seiko Epson Corp
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Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN1118934A publication Critical patent/CN1118934A/zh
Application granted granted Critical
Publication of CN1149636C publication Critical patent/CN1149636C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3202—Mechanical details, e.g. rollers or belts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Plasma Technology (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
CNB951091980A 1899-12-30 1995-06-30 晶片和基底的加工方法和装置及传送该晶片和基底的装置 Expired - Lifetime CN1149636C (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP72146/1995 1899-12-30
JP170460/1994 1994-06-30
JP17046094 1994-06-30
JP170460/94 1994-06-30
JP72146/95 1995-03-29
JP7214695 1995-03-29
JP7164526A JPH08327959A (ja) 1994-06-30 1995-06-08 ウエハ及び基板の処理装置及び処理方法、ウエハ及び基板の移載装置
JP164526/95 1995-06-08
JP164526/1995 1995-06-08

Publications (2)

Publication Number Publication Date
CN1118934A CN1118934A (zh) 1996-03-20
CN1149636C true CN1149636C (zh) 2004-05-12

Family

ID=27300875

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB951091980A Expired - Lifetime CN1149636C (zh) 1899-12-30 1995-06-30 晶片和基底的加工方法和装置及传送该晶片和基底的装置

Country Status (5)

Country Link
EP (1) EP0690479A1 (https=)
JP (1) JPH08327959A (https=)
KR (1) KR960002620A (https=)
CN (1) CN1149636C (https=)
TW (1) TW289128B (https=)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10160794A (ja) * 1996-12-02 1998-06-19 Mitsubishi Electric Corp Ｉｃ着脱装置及びその着脱ヘッド
EP1162646A3 (en) 2000-06-06 2004-10-13 Matsushita Electric Works, Ltd. Plasma treatment apparatus and method
KR100816329B1 (ko) * 2001-05-30 2008-03-24 삼성전자주식회사 액정 표시 장치용 인라인 제조 시스템
KR100620165B1 (ko) * 2001-06-25 2006-09-04 동부일렉트로닉스 주식회사 반도체웨이퍼 보관장치
US7157659B2 (en) * 2002-08-26 2007-01-02 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
TW200501201A (en) * 2003-01-15 2005-01-01 Hirata Spinning Substrate processing method and apparatus
JP4860295B2 (ja) * 2005-03-02 2012-01-25 エア・ウォーター株式会社 プラズマ処理方法
JP2007026781A (ja) * 2005-07-13 2007-02-01 Sharp Corp プラズマ処理装置
JP4578383B2 (ja) * 2005-10-25 2010-11-10 株式会社堀場製作所 パネル部材検査装置及びそれに適用されるパネル部材検査用プログラム
JP2007158023A (ja) * 2005-12-05 2007-06-21 Nec Electronics Corp 半導体ウェハの研磨装置及び半導体ウェハの研磨方法
JP4855142B2 (ja) * 2006-05-22 2012-01-18 東京エレクトロン株式会社 処理システム，搬送アームのクリーニング方法及び記録媒体
KR100849366B1 (ko) 2006-08-24 2008-07-31 세메스 주식회사 기판을 처리하는 장치 및 방법
JP2008244318A (ja) * 2007-03-28 2008-10-09 Tokyo Electron Ltd 基板搬送部材の洗浄方法、基板搬送装置及び基板処理システム
JP4516089B2 (ja) * 2007-03-30 2010-08-04 アプライド マテリアルズ インコーポレイテッド ウェハ搬送用ブレード
JP4602390B2 (ja) * 2007-11-01 2010-12-22 Ｓｄフューチャーテクノロジー株式会社 塗布乾燥装置
JP4450081B2 (ja) * 2008-02-13 2010-04-14 セイコーエプソン株式会社 部品試験装置
JP4564078B2 (ja) * 2008-04-28 2010-10-20 東京エレクトロン株式会社 基板処理装置
DE102009045008A1 (de) * 2008-10-15 2010-04-29 Carl Zeiss Smt Ag EUV-Lithographievorrichtung und Verfahren zum Bearbeiten einer Maske
JP5006898B2 (ja) * 2009-03-26 2012-08-22 積水化学工業株式会社 ドライエッチング処理装置および処理方法
JP2010283095A (ja) * 2009-06-04 2010-12-16 Hitachi Ltd 半導体装置の製造方法
KR101033776B1 (ko) * 2009-08-03 2011-05-13 주식회사 탑 엔지니어링 클리너를 구비한 어레이 테스트 장치
WO2011141516A2 (en) 2010-05-11 2011-11-17 Ultra High Vaccum Solutions Ltd. T/A Nines Engineering Method and apparatus to control surface texture modification of silicon wafers for photovoltaic cell devices
GB2486883A (en) * 2010-12-22 2012-07-04 Ultra High Vacuum Solutions Ltd Method and apparatus for surface texture modification of silicon wafers for photovoltaic cell devices
JP6053757B2 (ja) * 2012-03-29 2016-12-27 株式会社アルバック 多関節ロボット、搬送装置
CN104176466B (zh) * 2013-05-28 2017-06-09 北京中电科电子装备有限公司 具有清洗功能的工件传输装置
JP6601257B2 (ja) * 2016-02-19 2019-11-06 東京エレクトロン株式会社 基板処理方法
JP6731805B2 (ja) * 2016-07-12 2020-07-29 東京エレクトロン株式会社 接合システム
KR102628919B1 (ko) * 2019-05-29 2024-01-24 주식회사 원익아이피에스 기판처리장치 및 이를 이용한 기판처리방법
CN110344106A (zh) * 2019-07-15 2019-10-18 长兴云腾新能源科技有限公司 一种不锈钢半导体级洁净处理装置
KR102392489B1 (ko) * 2019-12-27 2022-05-02 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN115532551B (zh) * 2022-10-11 2025-10-10 隆基绿能科技股份有限公司 一种基板涂胶输送装置及其控制方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5378170A (en) * 1976-12-22 1978-07-11 Toshiba Corp Continuous processor for gas plasma etching
JP3014111B2 (ja) * 1990-02-01 2000-02-28 科学技術振興事業団 大気圧グロープラズマエッチング方法
JPH0817171B2 (ja) * 1990-12-31 1996-02-21 株式会社半導体エネルギー研究所 プラズマ発生装置およびそれを用いたエッチング方法
JP2840699B2 (ja) * 1990-12-12 1998-12-24 株式会社 半導体エネルギー研究所 被膜形成装置及び被膜形成方法

Also Published As

Publication number Publication date
JPH08327959A (ja) 1996-12-13
KR960002620A (ko) 1996-01-26
TW289128B (https=) 1996-10-21
CN1118934A (zh) 1996-03-20
EP0690479A1 (en) 1996-01-03

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CI01 Publication of corrected invention patent application

Correction item: Priority

Correct: 19950329

False: 18991230

Number: 19

Page: 496

Volume: 20

CI03 Correction of invention patent

Correction item: Priority

Correct: 19950329

False: 18991230

Number: 19

Page: The title page

Volume: 20

COR Change of bibliographic data

Free format text: CORRECT: PRIORITY; FROM: 1899.12.30 TO: 1995.3.29

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Granted publication date: 20040512

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