TW289128B - - Google Patents

Info

Publication number
TW289128B
TW289128B TW084106890A TW84106890A TW289128B TW 289128 B TW289128 B TW 289128B TW 084106890 A TW084106890 A TW 084106890A TW 84106890 A TW84106890 A TW 84106890A TW 289128 B TW289128 B TW 289128B
Authority
TW
Taiwan
Application number
TW084106890A
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of TW289128B publication Critical patent/TW289128B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Plasma Technology (AREA)
  • Liquid Crystal (AREA)
TW084106890A 1994-06-30 1995-07-04 TW289128B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP17046094 1994-06-30
JP7214695 1995-03-29
JP7164526A JPH08327959A (ja) 1994-06-30 1995-06-08 ウエハ及び基板の処理装置及び処理方法、ウエハ及び基板の移載装置

Publications (1)

Publication Number Publication Date
TW289128B true TW289128B (zh) 1996-10-21

Family

ID=27300875

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084106890A TW289128B (zh) 1994-06-30 1995-07-04

Country Status (5)

Country Link
EP (1) EP0690479A1 (zh)
JP (1) JPH08327959A (zh)
KR (1) KR960002620A (zh)
CN (1) CN1149636C (zh)
TW (1) TW289128B (zh)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10160794A (ja) * 1996-12-02 1998-06-19 Mitsubishi Electric Corp Ｉｃ着脱装置及びその着脱ヘッド
EP1162646A3 (en) 2000-06-06 2004-10-13 Matsushita Electric Works, Ltd. Plasma treatment apparatus and method
KR100816329B1 (ko) * 2001-05-30 2008-03-24 삼성전자주식회사 액정 표시 장치용 인라인 제조 시스템
KR100620165B1 (ko) * 2001-06-25 2006-09-04 동부일렉트로닉스 주식회사 반도체웨이퍼 보관장치
KR100921844B1 (ko) * 2002-08-26 2009-10-13 파나소닉 주식회사 플라즈마 처리 방법 및 장치
TW200501201A (en) * 2003-01-15 2005-01-01 Hirata Spinning Substrate processing method and apparatus
JP4860295B2 (ja) * 2005-03-02 2012-01-25 エア・ウォーター株式会社 プラズマ処理方法
JP2007026781A (ja) * 2005-07-13 2007-02-01 Sharp Corp プラズマ処理装置
JP4578383B2 (ja) * 2005-10-25 2010-11-10 株式会社堀場製作所 パネル部材検査装置及びそれに適用されるパネル部材検査用プログラム
JP2007158023A (ja) * 2005-12-05 2007-06-21 Nec Electronics Corp 半導体ウェハの研磨装置及び半導体ウェハの研磨方法
JP4855142B2 (ja) * 2006-05-22 2012-01-18 東京エレクトロン株式会社 処理システム，搬送アームのクリーニング方法及び記録媒体
KR100849366B1 (ko) * 2006-08-24 2008-07-31 세메스 주식회사 기판을 처리하는 장치 및 방법
JP2008244318A (ja) * 2007-03-28 2008-10-09 Tokyo Electron Ltd 基板搬送部材の洗浄方法、基板搬送装置及び基板処理システム
JP4516089B2 (ja) * 2007-03-30 2010-08-04 アプライド マテリアルズ インコーポレイテッド ウェハ搬送用ブレード
JP4602390B2 (ja) * 2007-11-01 2010-12-22 Ｓｄフューチャーテクノロジー株式会社 塗布乾燥装置
JP4450081B2 (ja) * 2008-02-13 2010-04-14 セイコーエプソン株式会社 部品試験装置
JP4564078B2 (ja) * 2008-04-28 2010-10-20 東京エレクトロン株式会社 基板処理装置
DE102009045008A1 (de) 2008-10-15 2010-04-29 Carl Zeiss Smt Ag EUV-Lithographievorrichtung und Verfahren zum Bearbeiten einer Maske
JP5006898B2 (ja) * 2009-03-26 2012-08-22 積水化学工業株式会社 ドライエッチング処理装置および処理方法
JP2010283095A (ja) * 2009-06-04 2010-12-16 Hitachi Ltd 半導体装置の製造方法
KR101033776B1 (ko) * 2009-08-03 2011-05-13 주식회사 탑 엔지니어링 클리너를 구비한 어레이 테스트 장치
PL2569802T3 (pl) 2010-05-11 2018-01-31 Ultra High Vacuum Solutions Ltd T/A Nines Eng Sposób kontroli modyfikacji tekstury powierzchni płytki krzemowej dla urządzeń w postaci ogniw fotowoltaicznych
GB2486883A (en) * 2010-12-22 2012-07-04 Ultra High Vacuum Solutions Ltd Method and apparatus for surface texture modification of silicon wafers for photovoltaic cell devices
WO2013146763A1 (ja) * 2012-03-29 2013-10-03 株式会社ｉＺＡ 多関節ロボット、搬送装置
CN104176466B (zh) * 2013-05-28 2017-06-09 北京中电科电子装备有限公司 具有清洗功能的工件传输装置
JP6601257B2 (ja) * 2016-02-19 2019-11-06 東京エレクトロン株式会社 基板処理方法
JP6731805B2 (ja) * 2016-07-12 2020-07-29 東京エレクトロン株式会社 接合システム
KR102628919B1 (ko) * 2019-05-29 2024-01-24 주식회사 원익아이피에스 기판처리장치 및 이를 이용한 기판처리방법
CN110344106A (zh) * 2019-07-15 2019-10-18 长兴云腾新能源科技有限公司 一种不锈钢半导体级洁净处理装置
KR102392489B1 (ko) * 2019-12-27 2022-05-02 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5378170A (en) * 1976-12-22 1978-07-11 Toshiba Corp Continuous processor for gas plasma etching
JP3014111B2 (ja) * 1990-02-01 2000-02-28 科学技術振興事業団 大気圧グロープラズマエッチング方法
JPH0817171B2 (ja) * 1990-12-31 1996-02-21 株式会社半導体エネルギー研究所 プラズマ発生装置およびそれを用いたエッチング方法
JP2840699B2 (ja) * 1990-12-12 1998-12-24 株式会社 半導体エネルギー研究所 被膜形成装置及び被膜形成方法

Also Published As

Publication number Publication date
CN1149636C (zh) 2004-05-12
KR960002620A (ko) 1996-01-26
CN1118934A (zh) 1996-03-20
EP0690479A1 (en) 1996-01-03
JPH08327959A (ja) 1996-12-13

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Legal Events

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MK4A Expiration of patent term of an invention patent