PL2569802T3 - Sposób kontroli modyfikacji tekstury powierzchni płytki krzemowej dla urządzeń w postaci ogniw fotowoltaicznych - Google Patents

Sposób kontroli modyfikacji tekstury powierzchni płytki krzemowej dla urządzeń w postaci ogniw fotowoltaicznych

Info

Publication number
PL2569802T3
PL2569802T3 PL11724988T PL11724988T PL2569802T3 PL 2569802 T3 PL2569802 T3 PL 2569802T3 PL 11724988 T PL11724988 T PL 11724988T PL 11724988 T PL11724988 T PL 11724988T PL 2569802 T3 PL2569802 T3 PL 2569802T3
Authority
PL
Poland
Prior art keywords
modification
controlling
devices
silicon wafer
surface texture
Prior art date
Application number
PL11724988T
Other languages
English (en)
Inventor
Edward Duffy
Laurent Clochard
Original Assignee
Ultra High Vacuum Solutions Ltd T/A Nines Eng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB1021693.5A external-priority patent/GB2486883A/en
Application filed by Ultra High Vacuum Solutions Ltd T/A Nines Eng filed Critical Ultra High Vacuum Solutions Ltd T/A Nines Eng
Publication of PL2569802T3 publication Critical patent/PL2569802T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
PL11724988T 2010-05-11 2011-05-11 Sposób kontroli modyfikacji tekstury powierzchni płytki krzemowej dla urządzeń w postaci ogniw fotowoltaicznych PL2569802T3 (pl)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
IES20100287 2010-05-11
IE20100287 2010-05-11
GB1021693.5A GB2486883A (en) 2010-12-22 2010-12-22 Method and apparatus for surface texture modification of silicon wafers for photovoltaic cell devices
PCT/EP2011/057633 WO2011141516A2 (en) 2010-05-11 2011-05-11 Method and apparatus to control surface texture modification of silicon wafers for photovoltaic cell devices
EP11724988.8A EP2569802B1 (en) 2010-05-11 2011-05-11 Method to control surface texture modification of silicon wafers for photovoltaic cell devices

Publications (1)

Publication Number Publication Date
PL2569802T3 true PL2569802T3 (pl) 2018-01-31

Family

ID=44626974

Family Applications (1)

Application Number Title Priority Date Filing Date
PL11724988T PL2569802T3 (pl) 2010-05-11 2011-05-11 Sposób kontroli modyfikacji tekstury powierzchni płytki krzemowej dla urządzeń w postaci ogniw fotowoltaicznych

Country Status (7)

Country Link
US (1) US9548224B2 (pl)
EP (1) EP2569802B1 (pl)
JP (1) JP6012597B2 (pl)
ES (1) ES2643645T3 (pl)
LT (1) LT2569802T (pl)
PL (1) PL2569802T3 (pl)
WO (1) WO2011141516A2 (pl)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014053484A1 (en) 2012-10-01 2014-04-10 Ultra High Vacuum Solutions Ltd. T/A Nines Engineering Combined etch and passivation of silicon solar cells
TW201500306A (zh) * 2013-05-22 2015-01-01 Corning Inc 利用玻璃載體處理可撓性薄片玻璃基板之方法
WO2015029019A2 (en) 2013-08-27 2015-03-05 Technion Research & Development Foundation Limited. System and method for pad printing
US20160351733A1 (en) * 2015-06-01 2016-12-01 International Business Machines Corporation Dry etch method for texturing silicon and device
EP3104418B8 (de) * 2015-06-08 2018-04-04 Meyer Burger (Germany) GmbH Verfahren und vorrichtung zum texturieren einer siliziumoberfläche
DE102017217713B4 (de) 2017-10-05 2022-12-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung elektrischer Kontakte auf einer Solarzelle und Solarzelle
DE102017219312A1 (de) * 2017-10-27 2019-05-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. 2-stufiger Trockenätzprozess zur Texturierung kristalliner Siliziumscheiben
KR102669738B1 (ko) 2019-11-08 2024-05-27 매사추세츠 인스티튜트 오브 테크놀로지 레이저 지원 재료 상변화 및 배출 마이크로 가공 방법
CN112928182B (zh) * 2021-01-22 2022-05-31 徐州中辉光伏科技有限公司 一种散热性能好的太阳能光伏刻蚀装置
CN120690715A (zh) * 2025-06-03 2025-09-23 上海稷以科技有限公司 新型氧化硅刻蚀腔体及刻蚀方法

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JPH06168922A (ja) * 1992-06-25 1994-06-14 Texas Instr Inc <Ti> シリコンの気相エッチング法
JP2833946B2 (ja) * 1992-12-08 1998-12-09 日本電気株式会社 エッチング方法および装置
JPH0845833A (ja) * 1994-08-02 1996-02-16 Japan Storage Battery Co Ltd アッシング装置
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JP2003100717A (ja) * 2001-09-21 2003-04-04 Tokyo Electron Ltd プラズマ処理装置
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Also Published As

Publication number Publication date
JP2013527611A (ja) 2013-06-27
JP6012597B2 (ja) 2016-10-25
US9548224B2 (en) 2017-01-17
US20130069204A1 (en) 2013-03-21
ES2643645T3 (es) 2017-11-23
LT2569802T (lt) 2017-12-27
WO2011141516A2 (en) 2011-11-17
EP2569802A2 (en) 2013-03-20
EP2569802B1 (en) 2017-07-12
WO2011141516A3 (en) 2012-01-26

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