CN1148789C - 腐蚀半导体晶片的方法和装置 - Google Patents

腐蚀半导体晶片的方法和装置 Download PDF

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Publication number
CN1148789C
CN1148789C CNB97197232XA CN97197232A CN1148789C CN 1148789 C CN1148789 C CN 1148789C CN B97197232X A CNB97197232X A CN B97197232XA CN 97197232 A CN97197232 A CN 97197232A CN 1148789 C CN1148789 C CN 1148789C
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CN
China
Prior art keywords
etching
wafer
sccm
range
electrode
Prior art date
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Expired - Fee Related
Application number
CNB97197232XA
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English (en)
Chinese (zh)
Other versions
CN1227668A (zh
Inventor
˹�ٷҡ�P���°�����˹
斯蒂芬·P·德奥尼拉斯
�¡��Ƹ�
艾尔弗德·科弗
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帕里托什·雷乔拉
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CollabRx Inc
Original Assignee
CollabRx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/675,093 external-priority patent/US6048435A/en
Priority claimed from US08/675,559 external-priority patent/US6500314B1/en
Priority claimed from US08/742,861 external-priority patent/US6127277A/en
Application filed by CollabRx Inc filed Critical CollabRx Inc
Publication of CN1227668A publication Critical patent/CN1227668A/zh
Application granted granted Critical
Publication of CN1148789C publication Critical patent/CN1148789C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32587—Triode systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
CNB97197232XA 1996-07-03 1997-01-23 腐蚀半导体晶片的方法和装置 Expired - Fee Related CN1148789C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US08/675,093 US6048435A (en) 1996-07-03 1996-07-03 Plasma etch reactor and method for emerging films
US08/675,559 US6500314B1 (en) 1996-07-03 1996-07-03 Plasma etch reactor and method
US08/675,093 1996-07-03
US08/675,559 1996-07-03
US08/742,861 1996-11-01
US08/742,861 US6127277A (en) 1996-07-03 1996-11-01 Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls

Publications (2)

Publication Number Publication Date
CN1227668A CN1227668A (zh) 1999-09-01
CN1148789C true CN1148789C (zh) 2004-05-05

Family

ID=27418296

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB97197232XA Expired - Fee Related CN1148789C (zh) 1996-07-03 1997-01-23 腐蚀半导体晶片的方法和装置

Country Status (6)

Country Link
US (1) US6492280B1 (enExample)
EP (1) EP0925605A4 (enExample)
JP (1) JP2000514600A (enExample)
CN (1) CN1148789C (enExample)
CA (1) CA2259972A1 (enExample)
WO (1) WO1998000859A1 (enExample)

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EP0865079A3 (en) * 1997-03-13 1999-10-20 Applied Materials, Inc. A method for removing redeposited veils from etched platinum surfaces
US6018065A (en) * 1997-11-10 2000-01-25 Advanced Technology Materials, Inc. Method of fabricating iridium-based materials and structures on substrates, iridium source reagents therefor
US6323132B1 (en) 1998-01-13 2001-11-27 Applied Materials, Inc. Etching methods for anisotropic platinum profile
US6919168B2 (en) 1998-01-13 2005-07-19 Applied Materials, Inc. Masking methods and etching sequences for patterning electrodes of high density RAM capacitors
US6265318B1 (en) 1998-01-13 2001-07-24 Applied Materials, Inc. Iridium etchant methods for anisotropic profile
JP2002510146A (ja) 1998-01-13 2002-04-02 アプライド マテリアルズ インコーポレイテッド 異方性プラチナプロファイルのエッチング方法
US6368517B1 (en) * 1999-02-17 2002-04-09 Applied Materials, Inc. Method for preventing corrosion of a dielectric material
US6548414B2 (en) * 1999-09-14 2003-04-15 Infineon Technologies Ag Method of plasma etching thin films of difficult to dry etch materials
KR100510279B1 (ko) * 2001-04-12 2005-08-30 (주)울텍 고밀도 플라즈마 발생원 및 방법
US6984288B2 (en) * 2001-08-08 2006-01-10 Lam Research Corporation Plasma processor in plasma confinement region within a vacuum chamber
JP4137419B2 (ja) * 2001-09-28 2008-08-20 東京エレクトロン株式会社 プラズマ処理装置
US6881616B1 (en) 2001-12-14 2005-04-19 Advanced Micro Devices, Inc. System for forming a semiconductor device and method thereof including implanting through a L shaped spacer to form source and drain regions
US7256113B1 (en) * 2001-12-14 2007-08-14 Advanced Micro Devices, Inc. System for forming a semiconductor device and method thereof
TWI241868B (en) 2002-02-06 2005-10-11 Matsushita Electric Industrial Co Ltd Plasma processing method and apparatus
US7625460B2 (en) * 2003-08-01 2009-12-01 Micron Technology, Inc. Multifrequency plasma reactor
US7279428B2 (en) * 2003-11-19 2007-10-09 Taiwan Semiconductor Manufacturing Company Method of preventing photoresist residues
JP2006135029A (ja) * 2004-11-04 2006-05-25 Sharp Corp ドライエッチング装置
JP4646880B2 (ja) * 2006-09-08 2011-03-09 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
US12625411B1 (en) * 2022-04-21 2026-05-12 Psiquantum, Corp. Two step patterning methods for photonic devices

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US2468174A (en) 1943-05-06 1949-04-26 Koppers Co Inc Apparatus for electriclaly transforming materials
US3458817A (en) 1967-02-13 1969-07-29 Westinghouse Electric Corp Microwave high power short pulse shaper
US4233109A (en) 1976-01-16 1980-11-11 Zaidan Hojin Handotai Kenkyu Shinkokai Dry etching method
JPS52127168A (en) 1976-04-19 1977-10-25 Fujitsu Ltd Etching unit
US4263088A (en) 1979-06-25 1981-04-21 Motorola, Inc. Method for process control of a plasma reaction
JPS5930130B2 (ja) 1979-09-20 1984-07-25 富士通株式会社 気相成長方法
JPS5687672A (en) 1979-12-15 1981-07-16 Anelva Corp Dry etching apparatus
EP0040081B1 (en) 1980-05-12 1984-09-12 Fujitsu Limited Method and apparatus for plasma etching
JPS57149734A (en) 1981-03-12 1982-09-16 Anelva Corp Plasma applying working device
JPS5916334A (ja) * 1982-07-19 1984-01-27 Matsushita Electronics Corp ドライエツチング方法
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US4579618A (en) 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
JPS61136229A (ja) * 1984-12-06 1986-06-24 Toshiba Corp ドライエツチング装置
US4585516A (en) 1985-03-04 1986-04-29 Tegal Corporation Variable duty cycle, multiple frequency, plasma reactor
US4617079A (en) * 1985-04-12 1986-10-14 The Perkin Elmer Corporation Plasma etching system
JP2947818B2 (ja) * 1988-07-27 1999-09-13 株式会社日立製作所 微細孔への金属穴埋め方法
US4889588A (en) * 1989-05-01 1989-12-26 Tegal Corporation Plasma etch isotropy control
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US6127277A (en) * 1996-07-03 2000-10-03 Tegal Corporation Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls

Also Published As

Publication number Publication date
EP0925605A1 (en) 1999-06-30
CN1227668A (zh) 1999-09-01
EP0925605A4 (en) 2003-11-05
CA2259972A1 (en) 1998-01-08
WO1998000859A1 (en) 1998-01-08
JP2000514600A (ja) 2000-10-31
US6492280B1 (en) 2002-12-10

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20040505

Termination date: 20140123