JP2000514600A - 半導体ウェーハーをエッチングするための方法及びその装置 - Google Patents

半導体ウェーハーをエッチングするための方法及びその装置

Info

Publication number
JP2000514600A
JP2000514600A JP10504081A JP50408198A JP2000514600A JP 2000514600 A JP2000514600 A JP 2000514600A JP 10504081 A JP10504081 A JP 10504081A JP 50408198 A JP50408198 A JP 50408198A JP 2000514600 A JP2000514600 A JP 2000514600A
Authority
JP
Japan
Prior art keywords
etching
wafer
electrode
sccm
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10504081A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000514600A5 (enExample
Inventor
スティーヴン ピー デオーネラス
アルフレッド コファー
パリトシュ ラジョラ
Original Assignee
ティーガル コーポレイション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/675,093 external-priority patent/US6048435A/en
Priority claimed from US08/675,559 external-priority patent/US6500314B1/en
Priority claimed from US08/742,861 external-priority patent/US6127277A/en
Application filed by ティーガル コーポレイション filed Critical ティーガル コーポレイション
Publication of JP2000514600A publication Critical patent/JP2000514600A/ja
Publication of JP2000514600A5 publication Critical patent/JP2000514600A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32587—Triode systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP10504081A 1996-07-03 1997-01-23 半導体ウェーハーをエッチングするための方法及びその装置 Pending JP2000514600A (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US08/675,093 US6048435A (en) 1996-07-03 1996-07-03 Plasma etch reactor and method for emerging films
US08/675,559 US6500314B1 (en) 1996-07-03 1996-07-03 Plasma etch reactor and method
US08/675,093 1996-07-03
US08/675,559 1996-07-03
US08/742,861 1996-11-01
US08/742,861 US6127277A (en) 1996-07-03 1996-11-01 Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls
PCT/US1997/001002 WO1998000859A1 (en) 1996-07-03 1997-01-23 Method and apparatus for etching a semiconductor wafer

Publications (2)

Publication Number Publication Date
JP2000514600A true JP2000514600A (ja) 2000-10-31
JP2000514600A5 JP2000514600A5 (enExample) 2004-11-18

Family

ID=27418296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10504081A Pending JP2000514600A (ja) 1996-07-03 1997-01-23 半導体ウェーハーをエッチングするための方法及びその装置

Country Status (6)

Country Link
US (1) US6492280B1 (enExample)
EP (1) EP0925605A4 (enExample)
JP (1) JP2000514600A (enExample)
CN (1) CN1148789C (enExample)
CA (1) CA2259972A1 (enExample)
WO (1) WO1998000859A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006135029A (ja) * 2004-11-04 2006-05-25 Sharp Corp ドライエッチング装置
JP2006345001A (ja) * 2006-09-08 2006-12-21 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0865079A3 (en) * 1997-03-13 1999-10-20 Applied Materials, Inc. A method for removing redeposited veils from etched platinum surfaces
US6018065A (en) * 1997-11-10 2000-01-25 Advanced Technology Materials, Inc. Method of fabricating iridium-based materials and structures on substrates, iridium source reagents therefor
US6323132B1 (en) 1998-01-13 2001-11-27 Applied Materials, Inc. Etching methods for anisotropic platinum profile
US6919168B2 (en) 1998-01-13 2005-07-19 Applied Materials, Inc. Masking methods and etching sequences for patterning electrodes of high density RAM capacitors
US6265318B1 (en) 1998-01-13 2001-07-24 Applied Materials, Inc. Iridium etchant methods for anisotropic profile
JP2002510146A (ja) 1998-01-13 2002-04-02 アプライド マテリアルズ インコーポレイテッド 異方性プラチナプロファイルのエッチング方法
US6368517B1 (en) * 1999-02-17 2002-04-09 Applied Materials, Inc. Method for preventing corrosion of a dielectric material
US6548414B2 (en) * 1999-09-14 2003-04-15 Infineon Technologies Ag Method of plasma etching thin films of difficult to dry etch materials
KR100510279B1 (ko) * 2001-04-12 2005-08-30 (주)울텍 고밀도 플라즈마 발생원 및 방법
US6984288B2 (en) * 2001-08-08 2006-01-10 Lam Research Corporation Plasma processor in plasma confinement region within a vacuum chamber
JP4137419B2 (ja) * 2001-09-28 2008-08-20 東京エレクトロン株式会社 プラズマ処理装置
US6881616B1 (en) 2001-12-14 2005-04-19 Advanced Micro Devices, Inc. System for forming a semiconductor device and method thereof including implanting through a L shaped spacer to form source and drain regions
US7256113B1 (en) * 2001-12-14 2007-08-14 Advanced Micro Devices, Inc. System for forming a semiconductor device and method thereof
TWI241868B (en) 2002-02-06 2005-10-11 Matsushita Electric Industrial Co Ltd Plasma processing method and apparatus
US7625460B2 (en) * 2003-08-01 2009-12-01 Micron Technology, Inc. Multifrequency plasma reactor
US7279428B2 (en) * 2003-11-19 2007-10-09 Taiwan Semiconductor Manufacturing Company Method of preventing photoresist residues
US12625411B1 (en) * 2022-04-21 2026-05-12 Psiquantum, Corp. Two step patterning methods for photonic devices

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US2468174A (en) 1943-05-06 1949-04-26 Koppers Co Inc Apparatus for electriclaly transforming materials
US3458817A (en) 1967-02-13 1969-07-29 Westinghouse Electric Corp Microwave high power short pulse shaper
US4233109A (en) 1976-01-16 1980-11-11 Zaidan Hojin Handotai Kenkyu Shinkokai Dry etching method
JPS52127168A (en) 1976-04-19 1977-10-25 Fujitsu Ltd Etching unit
US4263088A (en) 1979-06-25 1981-04-21 Motorola, Inc. Method for process control of a plasma reaction
JPS5930130B2 (ja) 1979-09-20 1984-07-25 富士通株式会社 気相成長方法
JPS5687672A (en) 1979-12-15 1981-07-16 Anelva Corp Dry etching apparatus
EP0040081B1 (en) 1980-05-12 1984-09-12 Fujitsu Limited Method and apparatus for plasma etching
JPS57149734A (en) 1981-03-12 1982-09-16 Anelva Corp Plasma applying working device
JPS5916334A (ja) * 1982-07-19 1984-01-27 Matsushita Electronics Corp ドライエツチング方法
US4464223A (en) 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
US4579618A (en) 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
JPS61136229A (ja) * 1984-12-06 1986-06-24 Toshiba Corp ドライエツチング装置
US4585516A (en) 1985-03-04 1986-04-29 Tegal Corporation Variable duty cycle, multiple frequency, plasma reactor
US4617079A (en) * 1985-04-12 1986-10-14 The Perkin Elmer Corporation Plasma etching system
JP2947818B2 (ja) * 1988-07-27 1999-09-13 株式会社日立製作所 微細孔への金属穴埋め方法
US4889588A (en) * 1989-05-01 1989-12-26 Tegal Corporation Plasma etch isotropy control
US4902377A (en) * 1989-05-23 1990-02-20 Motorola, Inc. Sloped contact etch process
EP0457049A3 (en) * 1990-04-19 1992-01-22 Kabushiki Kaisha Toshiba Dry etching method
JPH0423323A (ja) * 1990-05-14 1992-01-27 Fujitsu Ltd 半導体装置の製造方法
JPH04184926A (ja) * 1990-11-20 1992-07-01 Fuji Electric Co Ltd 絶縁膜のプラズマエッチング方法
JPH04323823A (ja) * 1991-04-23 1992-11-13 Sony Corp ドライエッチング方法
JP3104298B2 (ja) * 1991-05-30 2000-10-30 ソニー株式会社 ドライエッチング方法
KR100324792B1 (ko) * 1993-03-31 2002-06-20 히가시 데쓰로 플라즈마처리장치
KR0171060B1 (ko) 1993-12-28 1999-03-30 스기야마 카즈히코 반도체장치의 제조방법
US5565036A (en) * 1994-01-19 1996-10-15 Tel America, Inc. Apparatus and method for igniting plasma in a process module
US5512130A (en) * 1994-03-09 1996-04-30 Texas Instruments Incorporated Method and apparatus of etching a clean trench in a semiconductor material
US6127277A (en) * 1996-07-03 2000-10-03 Tegal Corporation Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006135029A (ja) * 2004-11-04 2006-05-25 Sharp Corp ドライエッチング装置
JP2006345001A (ja) * 2006-09-08 2006-12-21 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置

Also Published As

Publication number Publication date
EP0925605A1 (en) 1999-06-30
CN1227668A (zh) 1999-09-01
EP0925605A4 (en) 2003-11-05
CA2259972A1 (en) 1998-01-08
WO1998000859A1 (en) 1998-01-08
CN1148789C (zh) 2004-05-05
US6492280B1 (en) 2002-12-10

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