JP2000514600A5 - - Google Patents
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- Publication number
- JP2000514600A5 JP2000514600A5 JP1998504081A JP50408198A JP2000514600A5 JP 2000514600 A5 JP2000514600 A5 JP 2000514600A5 JP 1998504081 A JP1998504081 A JP 1998504081A JP 50408198 A JP50408198 A JP 50408198A JP 2000514600 A5 JP2000514600 A5 JP 2000514600A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/675,093 US6048435A (en) | 1996-07-03 | 1996-07-03 | Plasma etch reactor and method for emerging films |
| US08/675,559 US6500314B1 (en) | 1996-07-03 | 1996-07-03 | Plasma etch reactor and method |
| US08/675,093 | 1996-07-03 | ||
| US08/675,559 | 1996-07-03 | ||
| US08/742,861 | 1996-11-01 | ||
| US08/742,861 US6127277A (en) | 1996-07-03 | 1996-11-01 | Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls |
| PCT/US1997/001002 WO1998000859A1 (en) | 1996-07-03 | 1997-01-23 | Method and apparatus for etching a semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000514600A JP2000514600A (ja) | 2000-10-31 |
| JP2000514600A5 true JP2000514600A5 (enExample) | 2004-11-18 |
Family
ID=27418296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10504081A Pending JP2000514600A (ja) | 1996-07-03 | 1997-01-23 | 半導体ウェーハーをエッチングするための方法及びその装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6492280B1 (enExample) |
| EP (1) | EP0925605A4 (enExample) |
| JP (1) | JP2000514600A (enExample) |
| CN (1) | CN1148789C (enExample) |
| CA (1) | CA2259972A1 (enExample) |
| WO (1) | WO1998000859A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0865079A3 (en) * | 1997-03-13 | 1999-10-20 | Applied Materials, Inc. | A method for removing redeposited veils from etched platinum surfaces |
| US6018065A (en) * | 1997-11-10 | 2000-01-25 | Advanced Technology Materials, Inc. | Method of fabricating iridium-based materials and structures on substrates, iridium source reagents therefor |
| US6323132B1 (en) | 1998-01-13 | 2001-11-27 | Applied Materials, Inc. | Etching methods for anisotropic platinum profile |
| US6919168B2 (en) | 1998-01-13 | 2005-07-19 | Applied Materials, Inc. | Masking methods and etching sequences for patterning electrodes of high density RAM capacitors |
| US6265318B1 (en) | 1998-01-13 | 2001-07-24 | Applied Materials, Inc. | Iridium etchant methods for anisotropic profile |
| JP2002510146A (ja) | 1998-01-13 | 2002-04-02 | アプライド マテリアルズ インコーポレイテッド | 異方性プラチナプロファイルのエッチング方法 |
| US6368517B1 (en) * | 1999-02-17 | 2002-04-09 | Applied Materials, Inc. | Method for preventing corrosion of a dielectric material |
| US6548414B2 (en) * | 1999-09-14 | 2003-04-15 | Infineon Technologies Ag | Method of plasma etching thin films of difficult to dry etch materials |
| KR100510279B1 (ko) * | 2001-04-12 | 2005-08-30 | (주)울텍 | 고밀도 플라즈마 발생원 및 방법 |
| US6984288B2 (en) * | 2001-08-08 | 2006-01-10 | Lam Research Corporation | Plasma processor in plasma confinement region within a vacuum chamber |
| JP4137419B2 (ja) * | 2001-09-28 | 2008-08-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US6881616B1 (en) | 2001-12-14 | 2005-04-19 | Advanced Micro Devices, Inc. | System for forming a semiconductor device and method thereof including implanting through a L shaped spacer to form source and drain regions |
| US7256113B1 (en) * | 2001-12-14 | 2007-08-14 | Advanced Micro Devices, Inc. | System for forming a semiconductor device and method thereof |
| TWI241868B (en) | 2002-02-06 | 2005-10-11 | Matsushita Electric Industrial Co Ltd | Plasma processing method and apparatus |
| US7625460B2 (en) * | 2003-08-01 | 2009-12-01 | Micron Technology, Inc. | Multifrequency plasma reactor |
| US7279428B2 (en) * | 2003-11-19 | 2007-10-09 | Taiwan Semiconductor Manufacturing Company | Method of preventing photoresist residues |
| JP2006135029A (ja) * | 2004-11-04 | 2006-05-25 | Sharp Corp | ドライエッチング装置 |
| JP4646880B2 (ja) * | 2006-09-08 | 2011-03-09 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
| US12625411B1 (en) * | 2022-04-21 | 2026-05-12 | Psiquantum, Corp. | Two step patterning methods for photonic devices |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2468174A (en) | 1943-05-06 | 1949-04-26 | Koppers Co Inc | Apparatus for electriclaly transforming materials |
| US3458817A (en) | 1967-02-13 | 1969-07-29 | Westinghouse Electric Corp | Microwave high power short pulse shaper |
| US4233109A (en) | 1976-01-16 | 1980-11-11 | Zaidan Hojin Handotai Kenkyu Shinkokai | Dry etching method |
| JPS52127168A (en) | 1976-04-19 | 1977-10-25 | Fujitsu Ltd | Etching unit |
| US4263088A (en) | 1979-06-25 | 1981-04-21 | Motorola, Inc. | Method for process control of a plasma reaction |
| JPS5930130B2 (ja) | 1979-09-20 | 1984-07-25 | 富士通株式会社 | 気相成長方法 |
| JPS5687672A (en) | 1979-12-15 | 1981-07-16 | Anelva Corp | Dry etching apparatus |
| EP0040081B1 (en) | 1980-05-12 | 1984-09-12 | Fujitsu Limited | Method and apparatus for plasma etching |
| JPS57149734A (en) | 1981-03-12 | 1982-09-16 | Anelva Corp | Plasma applying working device |
| JPS5916334A (ja) * | 1982-07-19 | 1984-01-27 | Matsushita Electronics Corp | ドライエツチング方法 |
| US4464223A (en) | 1983-10-03 | 1984-08-07 | Tegal Corp. | Plasma reactor apparatus and method |
| US4579618A (en) | 1984-01-06 | 1986-04-01 | Tegal Corporation | Plasma reactor apparatus |
| JPS61136229A (ja) * | 1984-12-06 | 1986-06-24 | Toshiba Corp | ドライエツチング装置 |
| US4585516A (en) | 1985-03-04 | 1986-04-29 | Tegal Corporation | Variable duty cycle, multiple frequency, plasma reactor |
| US4617079A (en) * | 1985-04-12 | 1986-10-14 | The Perkin Elmer Corporation | Plasma etching system |
| JP2947818B2 (ja) * | 1988-07-27 | 1999-09-13 | 株式会社日立製作所 | 微細孔への金属穴埋め方法 |
| US4889588A (en) * | 1989-05-01 | 1989-12-26 | Tegal Corporation | Plasma etch isotropy control |
| US4902377A (en) * | 1989-05-23 | 1990-02-20 | Motorola, Inc. | Sloped contact etch process |
| EP0457049A3 (en) * | 1990-04-19 | 1992-01-22 | Kabushiki Kaisha Toshiba | Dry etching method |
| JPH0423323A (ja) * | 1990-05-14 | 1992-01-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH04184926A (ja) * | 1990-11-20 | 1992-07-01 | Fuji Electric Co Ltd | 絶縁膜のプラズマエッチング方法 |
| JPH04323823A (ja) * | 1991-04-23 | 1992-11-13 | Sony Corp | ドライエッチング方法 |
| JP3104298B2 (ja) * | 1991-05-30 | 2000-10-30 | ソニー株式会社 | ドライエッチング方法 |
| KR100324792B1 (ko) * | 1993-03-31 | 2002-06-20 | 히가시 데쓰로 | 플라즈마처리장치 |
| KR0171060B1 (ko) | 1993-12-28 | 1999-03-30 | 스기야마 카즈히코 | 반도체장치의 제조방법 |
| US5565036A (en) * | 1994-01-19 | 1996-10-15 | Tel America, Inc. | Apparatus and method for igniting plasma in a process module |
| US5512130A (en) * | 1994-03-09 | 1996-04-30 | Texas Instruments Incorporated | Method and apparatus of etching a clean trench in a semiconductor material |
| US6127277A (en) * | 1996-07-03 | 2000-10-03 | Tegal Corporation | Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls |
-
1997
- 1997-01-23 JP JP10504081A patent/JP2000514600A/ja active Pending
- 1997-01-23 CA CA002259972A patent/CA2259972A1/en not_active Abandoned
- 1997-01-23 WO PCT/US1997/001002 patent/WO1998000859A1/en not_active Ceased
- 1997-01-23 CN CNB97197232XA patent/CN1148789C/zh not_active Expired - Fee Related
- 1997-01-23 EP EP97903905A patent/EP0925605A4/en not_active Withdrawn
-
2000
- 2000-03-02 US US09/517,387 patent/US6492280B1/en not_active Expired - Fee Related