CN114127332B - 负载锁定装置 - Google Patents

负载锁定装置 Download PDF

Info

Publication number
CN114127332B
CN114127332B CN202080051147.7A CN202080051147A CN114127332B CN 114127332 B CN114127332 B CN 114127332B CN 202080051147 A CN202080051147 A CN 202080051147A CN 114127332 B CN114127332 B CN 114127332B
Authority
CN
China
Prior art keywords
chamber
load lock
substrate holder
transfer
extension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080051147.7A
Other languages
English (en)
Other versions
CN114127332A (zh
Inventor
三浦顺
福田直哉
熊谷修二
高城信二
户田哲郎
下川英利
根岸智
野村聪志
添田纯也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Publication of CN114127332A publication Critical patent/CN114127332A/zh
Application granted granted Critical
Publication of CN114127332B publication Critical patent/CN114127332B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853Hygiene
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Abstract

负载锁定装置具备:负载锁定室,所述负载锁定室具有与传递室连接的第一搬运口和与装载室连接的第二搬运口,所述传递室与减压处理装置连接;基板保持件,所述基板保持件在所述负载锁定室中保持基板;驱动机构,所述驱动机构以使所述基板保持件升降的方式配置于所述负载锁定室的下方,并经由连结构件与所述基板保持件连结;延长室,所述延长室从所述负载锁定室的下部向侧方延长;以及泵,所述泵配置于所述延长室的下方,并经由所述延长室排出所述负载锁定室的气体。所述延长室具有在从所述基板保持件的铅垂下方偏离的位置具有开口的底面,所述泵与所述开口连接。

Description

负载锁定装置
技术领域
本发明涉及一种负载锁定装置。
背景技术
在专利文献1中公开了一种负载锁定装置,该负载锁定装置具有:真空容器、在真空容器中进行升降的基板台、以及通过真空容器的底面中的配置于基板台的下方的开口与真空容器连接的高真空泵。
在配置有通过真空容器的底面中的配置于基板台的下方的开口与真空容器连接的泵的结构中,由泵产生的颗粒或者被泵吸引并被泵弹回的颗粒会飞扬,到达基板的上方侧的空间,可能附着于基板。这样的颗粒会引起使用基板制造的物品的制造不良。若为了抑制颗粒向基板的上方空间飞扬而减小基板台的侧面与真空容器的内表面的间隙,则可能会降低泵的排气效率。
现有技术文献
专利文献
专利文献1:日本特开平11-217670号公报
发明内容
发明所要解决的课题
本发明提供一种有利于减少颗粒从泵向基板的上方空间的飞扬的技术。
本发明的一方面涉及负载锁定装置,所述负载锁定装置具备:负载锁定室,所述负载锁定室具有与传递室连接的第一搬运口和与装载室连接的第二搬运口,所述传递室与减压处理装置连接;基板保持件,所述基板保持件在所述负载锁定室中保持基板;驱动机构,所述驱动机构以使所述基板保持件升降的方式配置于所述负载锁定室的下方,并经由连结构件与所述基板保持件连结;延长室,所述延长室从所述负载锁定室的下部向侧方延长;以及泵,所述泵配置于所述延长室的下方,并经由所述延长室排出所述负载锁定室的气体,所述延长室具有在从所述基板保持件的铅垂下方偏离的位置具有开口的底面,所述泵与所述开口连接。
附图说明
图1是示意性地示出包括本发明的一个实施方式的负载锁定装置的处理装置的结构的图。
图2是例示包括本发明的一个实施方式的负载锁定装置的处理装置的动作的图。
图3是例示包括本发明的一个实施方式的负载锁定装置的处理装置的动作的图。
图4是例示包括本发明的一个实施方式的负载锁定装置的处理装置的动作的图。
图5是例示包括本发明的一个实施方式的负载锁定装置的处理装置的动作的图。
图6是示出负载锁定室、延长室及气体分散部的配置的俯视图。
具体实施方式
以下,参照附图详细说明实施方式。此外,以下的实施方式并不限定权利要求书所涉及的发明。在实施方式中记载有多个特征,但这些多个特征并非全部都是发明的必要构件,另外,多个特征也可以任意地组合。而且,在附图中,对相同或同样的结构标注相同的附图标记,并省略重复的说明。
图1示意性地示出包括本发明的一个实施方式的负载锁定装置100的处理装置的结构。负载锁定装置100能够具有配置于装载室30与传递室20之间的负载锁定室110。装载室30能够维持为大气环境。在装载室30中,例如能够从载体提供基板S。或者,能够从前处理装置向装载室30提供基板S。装载室30能够在其顶部具备过滤器32,能够通过过滤器32向装载室30的内部空间供给下降流。在装载室30配置有搬运机器人34,基板S能够由搬运机器人34搬运。搬运机器人34能够通过阀50将基板S从装载室30搬运至负载锁定室110。被搬运来了基板S的负载锁定室110被充分减压。之后,配置于传递室20的搬运机器人22能够通过阀40将基板S从负载锁定室110搬运至传递室20。之后,搬运机器人22能够通过阀60从传递室20向减压处理装置10搬运基板S。减压处理装置10例如能够是CVD装置、PVD装置、蚀刻装置、等离子体处理装置及电子束描绘装置中的任一个。
负载锁定室110能够具有与传递室20连接的第一搬运口111和与装载室30连接的第二搬运口112,所述传递室20与减压处理装置10连接。在一例中,第一搬运口111的高度(例如,第一搬运口111的下端的高度)比第二搬运口112的高度(例如,第二搬运口112的下端的高度)低。第一搬运口111能够通过阀40与传递室20的内部空间能够连通地配置。第二搬运口112通过阀50与装载室30的内部空间能够连通地配置。
负载锁定装置100能够具备在负载锁定室110中保持基板S的基板保持件120。基板保持件120例如能够包括与基板S接触并保持基板S的多个接触部124。负载锁定装置100能够具备驱动机构130。驱动机构130能够以使基板保持件120升降的方式配置于负载锁定室110的下方。驱动机构130能够经由连结构件122与基板保持件120连结。
负载锁定室110能够具备从负载锁定室110的下部向侧方延长的延长室140和配置于延长室140的下方并经由延长室140排出负载锁定室110的气体的泵150。延长室140能够具有在从基板保持件120的铅垂下方偏离的位置具有开口142的底面144。泵150能够与开口142连接。虽未图示,但能够在泵150与开口142之间配置有阀。
泵150例如能够包括旋转泵和配置于该旋转泵与开口142之间的涡轮分子泵。涡轮分子泵的涡轮在动作时高速旋转。当由涡轮分子泵吸引的颗粒与涡轮碰撞时,可能会从涡轮弹开。另外,不论泵150是否为涡轮分子泵,泵150本身都可能会产生颗粒。因此,优选将泵150与设置于从负载锁定室110的下部向侧方延长的延长室140的底面144的开口142连接。由此,能够减少来自泵150的颗粒通过基板保持件120的侧面与负载锁定室的内侧面的间隙G而到达基板S的上方空间并附着于基板S的情况。
负载锁定装置100能够具备向负载锁定室110导入气体(例如清洁干燥空气或氮气)的气体导入部160。气体导入部160例如能够配置于通过第一搬运口111将基板S搬运至传递室20的状态下的基板保持件120与传递室20之间的路径的上方。在一例中,气体导入部160能够配置于第一搬运口111的上方。气体导入部160能够包括使气体分散于负载锁定室110的内部空间的气体分散部162。气体分散部162的至少一部分能够配置于负载锁定室110的内部。气体分散部162能够配置于与第二搬运口112相向的位置。气体导入部160能够包括调整气体的导入的流量调整阀164。
在配置于负载锁定室110的第二搬运口112与装载室30之间的阀50上能够连接气体排出管路52。能够通过气体排出管路52将第二搬运口112附近的空间的气体排出到负载锁定室110的外部空间。在气体排出管路52上能够连接未图示的泵。
第二搬运口112的至少一部分能够配置于延长室140的上方(铅垂上方)。或者,延长室140的至少一部分能够配置于第二搬运口112与泵150之间。这样的结构有利于缩小负载锁定装置100的占用空间。
装载室30的至少一部分能够配置于延长室140的上方(铅垂上方)。或者,延长室140的至少一部分能够配置于装载室30与泵150之间。这样的结构也有利于缩小负载锁定装置100的占用空间。
如图1~图5所例示的那样,基板保持件120能够配置于负载锁定室110的内部空间中的多个位置。如图1所例示的那样,该多个位置能够包括由基板保持件120保持的基板S的侧面的一部分与气体分散部162相向的位置。在此,由基板保持件120保持的基板S的侧面(外周面)的该一部分能够在与基板S的表面平行的方向上与气体分散部162相向。
图6是示出负载锁定室110、延长室140及气体分散部162的配置的俯视图。该俯视图也能够理解为相对于配置有负载锁定装置100的地板的正投影。基板保持件120在该俯视图或该正投影中能够位于气体分散部162与延长室140之间。或者,开口142在该俯视图或该正投影中能够位于气体分散部162与延长室140之间。
由基板保持件120保持的基板S能够具有矩形形状。或者,由基板保持件120保持的基板S能够具有具备表示基准方位的切口部的圆形形状。但是,由基板保持件120保持的基板S也可以具有其他形状。
基板保持件120的侧面与负载锁定室110的内侧面的间隙G的面积优选小于第二搬运口112的截面积。间隙G的面积更优选小于第二搬运口112的截面积的1/2、1/3或1/4。这样的结构有利于在从装载室30通过第二搬运口112向负载锁定室110的内部空间搬运基板S时,使从气体分散部162导入到负载锁定室110的内部空间的气体通过第二搬运口112及气体排出管路52排出的量大于从基板S的上方空间通过间隙G向基板保持件120的下方的空间排出的量。这对于抑制颗粒从装载室30通过第二搬运口112侵入到负载锁定室110的内部空间是有效的。
基板保持件120的侧面与负载锁定室110的内侧面的间隙G的面积优选小于设置于延长室140的底面144的开口142的截面积。这样的结构有利于减少来自泵150的颗粒通过间隙G而到达基板S的上方空间并附着于基板S的情况。间隙G的面积优选小于负载锁定室110与延长室140之间的连接部分146的截面积(铅垂面中的截面积)。这样的结构也有利于减少来自泵150的颗粒通过间隙G而到达基板S的上方空间并附着于基板S的情况。
基板保持件120的高度方向的尺寸Hh优选大于基板保持件120的侧面与负载锁定室110的内侧面的间隙G的尺寸Lg(基板保持件120的侧面与负载锁定室110的内侧面的距离)。这样的结构有利于抑制来自泵150的颗粒通过间隙G。基板保持件120的高度方向的尺寸Hh优选为间隙G的最大尺寸的3倍以上且115倍以下。这样的结构有利于抑制来自泵150的颗粒通过间隙G并且抑制负载锁定室110的大型化。
延长室140的高度方向的尺寸He优选大于基板保持件120的高度方向Hh的尺寸。这样的结构有利于提高泵150的气体排出的效率。在通过第一搬运口111使基板S在负载锁定室110与传递室20之间移动的状态下,优选基板保持件120的下端的高度比延长室140的顶面145的高度高。这样的结构有利于提高该状态下的泵150的气体排出的效率。
在图2、图3、图4及图5中,例示地示出图1所示的处理装置的动作。首先,能够一边从气体导入部160向负载锁定室110的内部空间导入(供给)气体,一边利用泵150将该内部空间的气体排出到负载锁定室110的外部空间。此时,能够使气体从气体导入部160向该内部空间的导入量比基于泵150的气体的排出量多,以使该内部空间的压力上升。如果该内部空间的压力成为大气压以上,则如图2所示,阀50打开,并且开始利用气体排出管路52排出气体。之后,能够利用搬运机器人34,从装载室30向负载锁定室110的内部空间的基板保持件120搬运基板S。
之后,如图3所示,阀50关闭,基板保持件120能够被驱动机构130向上方驱动。另外,在从气体导入部160向负载锁定室110的内部空间导入气体的状态下,基于泵150的来自该内部空间的气体的排出量提高,该内部空间被减压。之后,停止利用气体导入部160向该内部空间导入气体,能够进一步提高基于泵150的来自该内部空间的气体的排出量。
若负载锁定室110的内部空间的压力被充分地减压,则如图4所示,基板保持件120能够被驱动机构130向下方驱动直到用于将基板S向传递室20搬运的高度。之后,如图5所示,阀40打开,利用搬运机器人22将基板S从负载锁定室110的内部空间搬运至传递室20,进而能够搬运至减压处理装置10。之后,阀40关闭,并且在减压处理装置10中处理基板S。
之后,阀40打开,如图5所示,减压处理装置10的基板S能够利用搬运机器人22搬运至负载锁定室110的内部空间。之后,阀40能够关闭。
之后,能够一边从气体导入部160向负载锁定室110的内部空间导入气体,一边利用泵150将该内部空间的气体排出到负载锁定室110的外部空间。此时,能够使气体从气体导入部160向该内部空间的导入量比基于泵150的气体的排出量多,以使该内部空间的压力上升。如果该内部空间的压力成为大气压以上,则如图2所示,阀50打开,并且开始利用气体排出管路52排出气体。之后,能够利用搬运机器人34,从负载锁定室110的内部空间的基板保持件120向装载室30搬运基板S。之后,阀50关闭,能够停止利用气体排出管路52排出气体。
本发明并不限定于上述实施方式,能够在不脱离发明的精神及范围的情况下进行各种变更及变形。因此,为了公开发明的范围而添加权利要求书。
附图标记说明
100:负载锁定装置、110:负载锁定室、111:第一搬运口、112:第二搬运口、120:基板保持件、130:驱动机构、140:延长室、142:开口、144:底面、150:泵、160:气体导入部、162:气体分散部。

Claims (22)

1.一种负载锁定装置,其特征在于,具备:
负载锁定室,所述负载锁定室具有与传递室连接的第一搬运口和与装载室连接的第二搬运口,所述传递室与减压处理装置连接;
基板保持件,所述基板保持件在所述负载锁定室中保持基板;
驱动机构,所述驱动机构以使所述基板保持件升降的方式配置于所述负载锁定室的下方,并经由连结构件与所述基板保持件连结;
延长室,所述延长室从所述负载锁定室的下部向侧方延长;以及
泵,所述泵配置于所述延长室的下方,并经由所述延长室排出所述负载锁定室的气体,
所述延长室具有在从所述基板保持件的铅垂下方偏离的位置具有开口的底面,所述泵与所述开口连接,
所述第二搬运口的至少一部分配置于所述延长室的上方。
2.一种负载锁定装置,其特征在于,具备:
负载锁定室,所述负载锁定室具有与传递室连接的第一搬运口和与装载室连接的第二搬运口,所述传递室与减压处理装置连接;
基板保持件,所述基板保持件在所述负载锁定室中保持基板;
驱动机构,所述驱动机构以使所述基板保持件升降的方式配置于所述负载锁定室的下方,并经由连结构件与所述基板保持件连结;
延长室,所述延长室从所述负载锁定室的下部向侧方延长;以及
泵,所述泵配置于所述延长室的下方,并经由所述延长室排出所述负载锁定室的气体,
所述延长室具有在从所述基板保持件的铅垂下方偏离的位置具有开口的底面,所述泵与所述开口连接,
所述装载室的至少一部分配置于所述延长室的上方。
3.一种负载锁定装置,其特征在于,具备:
负载锁定室,所述负载锁定室具有与传递室连接的第一搬运口和与装载室连接的第二搬运口,所述传递室与减压处理装置连接;
基板保持件,所述基板保持件在所述负载锁定室中保持基板;
驱动机构,所述驱动机构以使所述基板保持件升降的方式配置于所述负载锁定室的下方,并经由连结构件与所述基板保持件连结;
延长室,所述延长室从所述负载锁定室的下部向侧方延长;
泵,所述泵配置于所述延长室的下方,并经由所述延长室排出所述负载锁定室的气体;以及
气体分散部,所述气体分散部使气体分散于所述负载锁定室的内部空间,
所述延长室具有在从所述基板保持件的铅垂下方偏离的位置具有开口的底面,所述泵与所述开口连接,
所述气体分散部配置成与所述第二搬运口相向,
所述第二搬运口的至少一部分配置于所述延长室的上方。
4.一种负载锁定装置,其特征在于,具备:
负载锁定室,所述负载锁定室具有与传递室连接的第一搬运口和与装载室连接的第二搬运口,所述传递室与减压处理装置连接;
基板保持件,所述基板保持件在所述负载锁定室中保持基板;
驱动机构,所述驱动机构以使所述基板保持件升降的方式配置于所述负载锁定室的下方,并经由连结构件与所述基板保持件连结;
延长室,所述延长室从所述负载锁定室的下部向侧方延长;
泵,所述泵配置于所述延长室的下方,并经由所述延长室排出所述负载锁定室的气体;以及
气体分散部,所述气体分散部使气体分散于所述负载锁定室的内部空间,
所述延长室具有在从所述基板保持件的铅垂下方偏离的位置具有开口的底面,所述泵与所述开口连接,
所述气体分散部配置成与所述第二搬运口相向,
所述装载室的至少一部分配置于所述延长室的上方。
5.根据权利要求1~4中任一项所述的负载锁定装置,其特征在于,
所述负载锁定装置还具备气体导入部,所述气体导入部配置于通过所述第一搬运口将所述基板搬运至所述传递室的状态下的所述基板保持件与所述传递室之间的路径的上方。
6.根据权利要求5所述的负载锁定装置,其特征在于,
所述第一搬运口的高度比所述第二搬运口的高度低。
7.根据权利要求5所述的负载锁定装置,其特征在于,
所述气体导入部包括使气体分散的气体分散部,
所述气体分散部配置于与所述第二搬运口相向的位置。
8.一种负载锁定装置,其特征在于,具备:
负载锁定室,所述负载锁定室具有与传递室连接的第一搬运口和与装载室连接的第二搬运口,所述传递室与减压处理装置连接;
基板保持件,所述基板保持件在所述负载锁定室中保持基板;
驱动机构,所述驱动机构以使所述基板保持件升降的方式配置于所述负载锁定室的下方,并经由连结构件与所述基板保持件连结;
延长室,所述延长室从所述负载锁定室的下部向侧方延长;
泵,所述泵配置于所述延长室的下方,并经由所述延长室排出所述负载锁定室的气体;以及
气体导入部,所述气体导入部配置于通过所述第一搬运口将所述基板搬运至所述传递室的状态下的所述基板保持件与所述传递室之间的路径的上方,
所述延长室具有在从所述基板保持件的铅垂下方偏离的位置具有开口的底面,所述泵与所述开口连接,
所述基板保持件的侧面与所述负载锁定室的内侧面的间隙的面积小于所述第二搬运口的截面积。
9.一种负载锁定装置,其特征在于,具备:
负载锁定室,所述负载锁定室具有与传递室连接的第一搬运口和与装载室连接的第二搬运口,所述传递室与减压处理装置连接;
基板保持件,所述基板保持件在所述负载锁定室中保持基板;
驱动机构,所述驱动机构以使所述基板保持件升降的方式配置于所述负载锁定室的下方,并经由连结构件与所述基板保持件连结;
延长室,所述延长室从所述负载锁定室的下部向侧方延长;
泵,所述泵配置于所述延长室的下方,并经由所述延长室排出所述负载锁定室的气体;以及
气体导入部,所述气体导入部配置于通过所述第一搬运口将所述基板搬运至所述传递室的状态下的所述基板保持件与所述传递室之间的路径的上方,
所述延长室具有在从所述基板保持件的铅垂下方偏离的位置具有开口的底面,所述泵与所述开口连接,
所述基板保持件的侧面与所述负载锁定室的内侧面的间隙的面积小于所述第二搬运口的截面积的1/2。
10.一种负载锁定装置,其特征在于,具备:
负载锁定室,所述负载锁定室具有与传递室连接的第一搬运口和与装载室连接的第二搬运口,所述传递室与减压处理装置连接;
基板保持件,所述基板保持件在所述负载锁定室中保持基板;
驱动机构,所述驱动机构以使所述基板保持件升降的方式配置于所述负载锁定室的下方,并经由连结构件与所述基板保持件连结;
延长室,所述延长室从所述负载锁定室的下部向侧方延长;以及
泵,所述泵配置于所述延长室的下方,并经由所述延长室排出所述负载锁定室的气体,
所述延长室具有在从所述基板保持件的铅垂下方偏离的位置具有开口的底面,所述泵与所述开口连接,
所述基板保持件的侧面与所述负载锁定室的内侧面的间隙的面积小于所述开口的截面积。
11.一种负载锁定装置,其特征在于,具备:
负载锁定室,所述负载锁定室具有与传递室连接的第一搬运口和与装载室连接的第二搬运口,所述传递室与减压处理装置连接;
基板保持件,所述基板保持件在所述负载锁定室中保持基板;
驱动机构,所述驱动机构以使所述基板保持件升降的方式配置于所述负载锁定室的下方,并经由连结构件与所述基板保持件连结;
延长室,所述延长室从所述负载锁定室的下部向侧方延长;以及
泵,所述泵配置于所述延长室的下方,并经由所述延长室排出所述负载锁定室的气体,
所述延长室具有在从所述基板保持件的铅垂下方偏离的位置具有开口的底面,所述泵与所述开口连接,
所述基板保持件的侧面与所述负载锁定室的内侧面的间隙的面积小于所述负载锁定室与所述延长室之间的连接部分的截面积。
12.根据权利要求1~4及8~11中任一项所述的负载锁定装置,其特征在于,
所述基板保持件的高度方向的尺寸大于所述基板保持件的侧面与所述负载锁定室的内侧面的间隙的尺寸。
13.根据权利要求1~4及8~11中任一项所述的负载锁定装置,其特征在于,
所述基板保持件的高度方向的尺寸为所述基板保持件的侧面与所述负载锁定室的内侧面的间隙的最大尺寸的3倍以上且115倍以下。
14.根据权利要求1~4及8~11中任一项所述的负载锁定装置,其特征在于,
所述延长室的高度方向的尺寸大于所述基板保持件的高度方向的尺寸。
15.根据权利要求1所述的负载锁定装置,其特征在于,
在通过所述第一搬运口使基板在所述负载锁定室与所述传递室之间移动的状态下,所述基板保持件的下端的高度比所述延长室的顶面的高度高。
16.根据权利要求1~4及8~11中任一项所述的负载锁定装置,其特征在于,
所述延长室的至少一部分配置于所述第二搬运口与所述泵之间。
17.根据权利要求1~4及8~11中任一项所述的负载锁定装置,其特征在于,
所述延长室的至少一部分配置于所述装载室与所述泵之间。
18.根据权利要求1、2、10及11中任一项所述的负载锁定装置,其特征在于,
所述负载锁定装置还具备使气体分散于所述负载锁定室的内部空间的气体分散部,
所述气体分散部配置成与所述第二搬运口相向,
所述延长室的至少一部分配置于所述第二搬运口与所述泵之间。
19.根据权利要求1、2、10及11中任一项所述的负载锁定装置,其特征在于,
所述负载锁定装置还具备使气体分散于所述负载锁定室的内部空间的气体分散部,
所述气体分散部配置成与所述第二搬运口相向,
所述延长室的至少一部分配置于所述装载室与所述泵之间。
20.根据权利要求3或4所述的负载锁定装置,其特征在于,
能够配置所述基板保持件的位置包括由所述基板保持件保持的所述基板的侧面的一部分与所述气体分散部相向的位置。
21.根据权利要求1、2、10及11中任一项所述的负载锁定装置,其特征在于,
所述负载锁定装置还具备使气体分散于所述负载锁定室的内部空间的气体分散部,
在相对于配置有所述负载锁定装置的地板的正投影中,所述基板保持件位于所述气体分散部与所述延长室之间。
22.根据权利要求1、2、10及11中任一项所述的负载锁定装置,其特征在于,
所述负载锁定装置还具备使气体分散于所述负载锁定室的内部空间的气体分散部,
在相对于配置有所述负载锁定装置的地板的正投影中,所述基板保持件位于所述气体分散部与所述开口之间。
CN202080051147.7A 2019-09-06 2020-09-02 负载锁定装置 Active CN114127332B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PCT/JP2019/035247 WO2021044622A1 (ja) 2019-09-06 2019-09-06 ロードロック装置
JPPCT/JP2019/035247 2019-09-06
PCT/JP2020/033160 WO2021045069A1 (ja) 2019-09-06 2020-09-02 ロードロック装置

Publications (2)

Publication Number Publication Date
CN114127332A CN114127332A (zh) 2022-03-01
CN114127332B true CN114127332B (zh) 2024-04-09

Family

ID=74164574

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080051147.7A Active CN114127332B (zh) 2019-09-06 2020-09-02 负载锁定装置

Country Status (7)

Country Link
US (1) US20220139729A1 (zh)
EP (1) EP4027372A4 (zh)
JP (3) JP6815554B1 (zh)
KR (1) KR20220025881A (zh)
CN (1) CN114127332B (zh)
TW (2) TWI790094B (zh)
WO (2) WO2021044622A1 (zh)

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07235394A (ja) * 1993-09-17 1995-09-05 Hitachi Ltd プラズマ生成方法及び装置とそれを用いたプラズマ処理方法及び装置
JPH1050802A (ja) * 1996-08-05 1998-02-20 Kokusai Electric Co Ltd 基板処理装置
JPH11186355A (ja) * 1997-12-22 1999-07-09 Tokyo Electron Ltd ロードロック機構、基板処理装置および基板処理方法
JP2001291758A (ja) * 2000-11-27 2001-10-19 Tokyo Electron Ltd 真空処理装置
JP2002075882A (ja) * 2000-09-04 2002-03-15 Anelva Corp 基板処理装置及び基板処理装置用ロードロックチャンバー並びに基板処理装置におけるロードロックチャンバーのクリーニング方法
JP2004087781A (ja) * 2002-08-27 2004-03-18 Ulvac Japan Ltd 真空処理装置及び真空処理方法
CN1854839A (zh) * 2005-04-18 2006-11-01 东京毅力科创株式会社 负载锁定装置及处理方法
JP2010199461A (ja) * 2009-02-27 2010-09-09 Hitachi High-Technologies Corp プラズマ処理装置
JP2011127136A (ja) * 2009-12-15 2011-06-30 Canon Anelva Corp スパッタリング装置および、該スパッタリング装置を用いた半導体デバイスの製造方法
CN102157420A (zh) * 2007-03-29 2011-08-17 东京毅力科创株式会社 真空处理装置和真空处理装置的运行方法
CN102414809A (zh) * 2009-08-29 2012-04-11 东京毅力科创株式会社 负载锁定装置和处理系统
CN103733309A (zh) * 2011-08-02 2014-04-16 株式会社Eugene科技 用于外延工艺的半导体制造设备
CN105723496A (zh) * 2013-11-18 2016-06-29 佳能安内华股份有限公司 基板处理装置和基板处理方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06158284A (ja) * 1992-11-17 1994-06-07 Matsushita Electric Ind Co Ltd 真空装置
JP4116149B2 (ja) 1997-11-25 2008-07-09 株式会社日本製鋼所 枚葉式ロードロック装置
JP3914684B2 (ja) * 2000-04-05 2007-05-16 サンデン株式会社 自動販売機
US6562141B2 (en) * 2000-07-03 2003-05-13 Andrew Peter Clarke Dual degas/cool loadlock cluster tool
US20020159864A1 (en) * 2001-04-30 2002-10-31 Applied Materials, Inc. Triple chamber load lock
JP4118189B2 (ja) * 2003-05-20 2008-07-16 株式会社日立ハイテクノロジーズ ロードロック装置
KR100665855B1 (ko) * 2006-02-01 2007-01-09 삼성전자주식회사 반도체 디바이스 제조설비의 진공장치 및 이를 이용한진공방법
US9228685B2 (en) * 2010-12-09 2016-01-05 Tokyo Electron Limited Load lock device
JP2012195427A (ja) 2011-03-16 2012-10-11 Ulvac Japan Ltd 基板処理装置及び基板処理方法
JP2016004834A (ja) 2014-06-13 2016-01-12 東京エレクトロン株式会社 真空処理装置
CN105789091B (zh) * 2016-03-16 2020-04-24 沈阳拓荆科技有限公司 负载腔室及其使用该负载腔室之多腔室处理系统
US11948810B2 (en) * 2017-11-15 2024-04-02 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for processing substrates or wafers

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07235394A (ja) * 1993-09-17 1995-09-05 Hitachi Ltd プラズマ生成方法及び装置とそれを用いたプラズマ処理方法及び装置
JPH1050802A (ja) * 1996-08-05 1998-02-20 Kokusai Electric Co Ltd 基板処理装置
JPH11186355A (ja) * 1997-12-22 1999-07-09 Tokyo Electron Ltd ロードロック機構、基板処理装置および基板処理方法
JP2002075882A (ja) * 2000-09-04 2002-03-15 Anelva Corp 基板処理装置及び基板処理装置用ロードロックチャンバー並びに基板処理装置におけるロードロックチャンバーのクリーニング方法
JP2001291758A (ja) * 2000-11-27 2001-10-19 Tokyo Electron Ltd 真空処理装置
JP2004087781A (ja) * 2002-08-27 2004-03-18 Ulvac Japan Ltd 真空処理装置及び真空処理方法
CN1854839A (zh) * 2005-04-18 2006-11-01 东京毅力科创株式会社 负载锁定装置及处理方法
CN102157420A (zh) * 2007-03-29 2011-08-17 东京毅力科创株式会社 真空处理装置和真空处理装置的运行方法
JP2010199461A (ja) * 2009-02-27 2010-09-09 Hitachi High-Technologies Corp プラズマ処理装置
CN102414809A (zh) * 2009-08-29 2012-04-11 东京毅力科创株式会社 负载锁定装置和处理系统
JP2011127136A (ja) * 2009-12-15 2011-06-30 Canon Anelva Corp スパッタリング装置および、該スパッタリング装置を用いた半導体デバイスの製造方法
CN103733309A (zh) * 2011-08-02 2014-04-16 株式会社Eugene科技 用于外延工艺的半导体制造设备
CN105723496A (zh) * 2013-11-18 2016-06-29 佳能安内华股份有限公司 基板处理装置和基板处理方法

Also Published As

Publication number Publication date
CN114127332A (zh) 2022-03-01
JP2021044550A (ja) 2021-03-18
EP4027372A1 (en) 2022-07-13
JP7474219B2 (ja) 2024-04-24
TW202218032A (zh) 2022-05-01
TWI754371B (zh) 2022-02-01
WO2021045069A1 (ja) 2021-03-11
EP4027372A4 (en) 2023-10-04
JP6815554B1 (ja) 2021-01-20
WO2021044622A1 (ja) 2021-03-11
JP2021103787A (ja) 2021-07-15
JP6861317B2 (ja) 2021-04-21
TWI790094B (zh) 2023-01-11
KR20220025881A (ko) 2022-03-03
TW202121573A (zh) 2021-06-01
JP2021044544A (ja) 2021-03-18
US20220139729A1 (en) 2022-05-05

Similar Documents

Publication Publication Date Title
CN105990196B (zh) 夹持装置、基板输入输出装置以及基板处理装置
JP3671983B2 (ja) 真空処理装置
CN114127332B (zh) 负载锁定装置
KR101875305B1 (ko) 챔버 사이에 마련되는 슬릿 퍼지 장치 및 이를 포함하는 고온 상압 기상성장장치
JP6818930B1 (ja) ロードロック装置
JP2019091753A (ja) ロードポート装置
KR101931180B1 (ko) 기판 처리 장치 및 기판 반입 방법
KR101019843B1 (ko) 기밀 모듈 및 상기 기밀 모듈의 배기 방법
TW201941344A (zh) 真空處理裝置的運轉方法
CN217507267U (zh) 半导体加工工艺腔室及半导体加工装置
JP2002270670A (ja) 真空処理装置
KR101036188B1 (ko) 평판표시소자 제조장치
CN117182683A (zh) 一种基板传输装置和基板磨削装备
JP2004128046A (ja) 真空処理槽
KR20020066087A (ko) 로드락챔버
KR20000075300A (ko) 웨이퍼 패브리케이션 챔버 시스템

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant