JP2021044544A - ロードロック装置 - Google Patents
ロードロック装置 Download PDFInfo
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- JP2021044544A JP2021044544A JP2020146981A JP2020146981A JP2021044544A JP 2021044544 A JP2021044544 A JP 2021044544A JP 2020146981 A JP2020146981 A JP 2020146981A JP 2020146981 A JP2020146981 A JP 2020146981A JP 2021044544 A JP2021044544 A JP 2021044544A
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- load lock
- chamber
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- 239000000758 substrate Substances 0.000 claims abstract description 98
- 239000006185 dispersion Substances 0.000 claims description 26
- 230000006837 decompression Effects 0.000 claims description 7
- 239000002245 particle Substances 0.000 abstract description 14
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 54
- 238000007599 discharging Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Epidemiology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (23)
- 減圧処理装置と接続されるトランスファー室と接続される第1搬送口、および、ローダー室と接続される第2搬送口とを有するロードロック室と、
前記ロードロック室の中で基板を保持する基板ホルダと、
前記基板ホルダを昇降させるように前記ロードロック室の下方に配置され、連結部材を介して前記基板ホルダに連結された駆動機構と、
前記ロードロック室の下部から側方に延長された延長室と、
前記延長室の下方に配置され前記延長室を介して前記ロードロック室のガスを排出するポンプと、を備え、
前記延長室は、前記基板ホルダの鉛直下方からずれた位置に開口を有する底面を有し、前記開口に前記ポンプが接続されている、
ことを特徴とするロードロック装置。 - 前記第1搬送口を通して前記基板が前記トランスファー室に搬送される状態における前記基板ホルダと前記トランスファー室との間の経路の上方に配置されたガス導入部を更に備える、
ことを特徴とする請求項1に記載のロードロック装置。 - 前記第1搬送口の高さは、前記第2搬送口の高さより低い、
ことを特徴とする請求項2に記載のロードロック装置。 - 前記ガス導入部は、ガスを分散させるガス分散部を含み、
前記ガス分散部は、前記第2搬送口に対向する位置に配置されている、
ことを特徴とする請求項2又は3に記載のロードロック装置。 - 前記基板ホルダの側面と前記ロードロック室の内側面との間隙の面積が前記第2搬送口の断面積より小さい、
ことを特徴とする請求項2乃至4のいずれか1項に記載のロードロック装置。 - 前記基板ホルダの側面と前記ロードロック室の内側面との間隙の面積が前記第2搬送口の断面積の1/2より小さい、
ことを特徴とする請求項2乃至4のいずれか1項に記載のロードロック装置。 - 前記基板ホルダの側面と前記ロードロック室の内側面との間隙の面積は、前記開口の断面積より小さい、
ことを特徴とする請求項1乃至4のいずれか1項に記載のロードロック装置。 - 前記基板ホルダの側面と前記ロードロック室の内側面との間隙の面積は、前記ロードロック室と前記延長室との間の接続部分の断面積より小さい、
ことを特徴とする請求項1乃至4のいずれか1項に記載のロードロック装置。 - 前記基板ホルダの高さ方向の寸法は、前記基板ホルダの側面と前記ロードロック室の内側面との間隙の寸法より大きい、
ことを特徴とする請求項1乃至8のいずれか1項に記載のロードロック装置。 - 前記基板ホルダの高さ方向の寸法は、前記基板ホルダの側面と前記ロードロック室の内側面との間隙の最大寸法の3倍以上かつ115倍以下である、
ことを特徴とする請求項1乃至8のいずれか1項に記載のロードロック装置。 - 前記延長室の高さ方向の寸法は、前記基板ホルダの高さ方向の寸法より大きい、
ことを特徴とする請求項1乃至10のいずれか1項に記載のロードロック装置。 - 前記第1搬送口を通して前記ロードロック室と前記トランスファー室との間で基板が移動する状態において、前記基板ホルダの下端の高さが前記延長室の天井面の高さより高い、
ことを特徴とする請求項1乃至11のいずれか1項に記載のロードロック装置。 - 前記第2搬送口の少なくとも一部は、前記延長室の上に配置される、
ことを特徴とする請求項1乃至12のいずれか1項に記載のロードロック装置。 - 前記延長室の少なくとも一部は、前記第2搬送口と前記ポンプとの間に配置される、
ことを特徴とする請求項1乃至12のいずれか1項に記載のロードロック装置。 - 前記ローダー室の少なくとも一部は、前記延長室の上に配置される、
ことを特徴とする請求項1乃至12のいずれか1項に記載のロードロック装置。 - 前記延長室の少なくとも一部は、前記ローダー室と前記ポンプとの間に配置される、
ことを特徴とする請求項1乃至12のいずれか1項に記載のロードロック装置。 - 前記ロードロック室の内部空間にガスを分散させるガス分散部を更に備え、
前記ガス分散部は、前記第2搬送口に対向するように配置され、
前記第2搬送口の少なくとも一部は、前記延長室の上に配置される、
ことを特徴とする請求項1に記載のロードロック装置。 - 前記ロードロック室の内部空間にガスを分散させるガス分散部を更に備え、
前記ガス分散部は、前記第2搬送口に対向するように配置され、
前記延長室の少なくとも一部は、前記第2搬送口と前記ポンプとの間に配置される、
ことを特徴とする請求項1に記載のロードロック装置。 - 前記ロードロック室の内部空間にガスを分散させるガス分散部を更に備え、
前記ガス分散部は、前記第2搬送口に対向するように配置され、
前記ローダー室の少なくとも一部は、前記延長室の上に配置される、
ことを特徴とする請求項1に記載のロードロック装置。 - 前記ロードロック室の内部空間にガスを分散させるガス分散部を更に備え、
前記ガス分散部は、前記第2搬送口に対向するように配置され、
前記延長室の少なくとも一部は、前記ローダー室と前記ポンプとの間に配置される、
ことを特徴とする請求項1に記載のロードロック装置。 - 前記基板ホルダが配置されうる位置は、前記基板ホルダによって保持された前記基板の側面の一部が前記ガス分散部に対向する位置を含む、
ことを特徴とする請求項17乃至20のいずれか1項に記載のロードロック装置。 - 前記ロードロック室の内部空間にガスを分散させるガス分散部を更に備え、
前記ロードロック装置が配置された床に対する正射影において、前記ガス分散部と前記延長室との間に前記基板ホルダが位置する、
ことを特徴とする請求項1に記載のロードロック装置。 - 前記ロードロック室の内部空間にガスを分散させるガス分散部を更に備え、
前記ロードロック装置が配置された床に対する正射影において、前記ガス分散部と前記開口との間に前記基板ホルダが位置する、
ことを特徴とする請求項1に記載のロードロック装置。
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Application Number | Priority Date | Filing Date | Title |
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PCT/JP2019/035247 WO2021044622A1 (ja) | 2019-09-06 | 2019-09-06 | ロードロック装置 |
WOPCT/JP2019/035247 | 2019-09-06 |
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JP2020154841A Division JP6861317B2 (ja) | 2019-09-06 | 2020-09-15 | ロードロック装置 |
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US (1) | US20220139729A1 (ja) |
EP (1) | EP4027372A4 (ja) |
JP (3) | JP6815554B1 (ja) |
KR (1) | KR20220025881A (ja) |
CN (2) | CN114127332B (ja) |
TW (2) | TWI790094B (ja) |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06158284A (ja) * | 1992-11-17 | 1994-06-07 | Matsushita Electric Ind Co Ltd | 真空装置 |
JPH07235394A (ja) * | 1993-09-17 | 1995-09-05 | Hitachi Ltd | プラズマ生成方法及び装置とそれを用いたプラズマ処理方法及び装置 |
JPH1050802A (ja) * | 1996-08-05 | 1998-02-20 | Kokusai Electric Co Ltd | 基板処理装置 |
JP2001291758A (ja) * | 2000-11-27 | 2001-10-19 | Tokyo Electron Ltd | 真空処理装置 |
US20020159864A1 (en) * | 2001-04-30 | 2002-10-31 | Applied Materials, Inc. | Triple chamber load lock |
JP2004503099A (ja) * | 2000-07-03 | 2004-01-29 | クラーク,アンドリュー | デュアル脱気/冷却装填ロッククラスタツール |
US20070175395A1 (en) * | 2006-02-01 | 2007-08-02 | Sang-Do Oh | Semiconductor device manufacturing equipment including a vacuum apparatus and a method of operating the same |
JP2010199461A (ja) * | 2009-02-27 | 2010-09-09 | Hitachi High-Technologies Corp | プラズマ処理装置 |
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WO2021045069A1 (ja) | 2021-03-11 |
TWI790094B (zh) | 2023-01-11 |
US20220139729A1 (en) | 2022-05-05 |
TW202121573A (zh) | 2021-06-01 |
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CN114127332A (zh) | 2022-03-01 |
CN118213259A (zh) | 2024-06-18 |
CN114127332B (zh) | 2024-04-09 |
KR20220025881A (ko) | 2022-03-03 |
TWI754371B (zh) | 2022-02-01 |
JP2021103787A (ja) | 2021-07-15 |
EP4027372A4 (en) | 2023-10-04 |
JP7474219B2 (ja) | 2024-04-24 |
TW202218032A (zh) | 2022-05-01 |
JP6861317B2 (ja) | 2021-04-21 |
EP4027372A1 (en) | 2022-07-13 |
WO2021044622A1 (ja) | 2021-03-11 |
JP2021044550A (ja) | 2021-03-18 |
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