CN114026189B - 氧化硅膜用研磨液组合物 - Google Patents

氧化硅膜用研磨液组合物 Download PDF

Info

Publication number
CN114026189B
CN114026189B CN202080046236.2A CN202080046236A CN114026189B CN 114026189 B CN114026189 B CN 114026189B CN 202080046236 A CN202080046236 A CN 202080046236A CN 114026189 B CN114026189 B CN 114026189B
Authority
CN
China
Prior art keywords
component
polishing
structural unit
mass
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080046236.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN114026189A (zh
Inventor
菅原将人
山口哲史
工藤功辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kao Corp
Original Assignee
Kao Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kao Corp filed Critical Kao Corp
Publication of CN114026189A publication Critical patent/CN114026189A/zh
Application granted granted Critical
Publication of CN114026189B publication Critical patent/CN114026189B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN202080046236.2A 2019-06-26 2020-06-19 氧化硅膜用研磨液组合物 Active CN114026189B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019118741 2019-06-26
JP2019-118741 2019-06-26
PCT/JP2020/024130 WO2020262234A1 (ja) 2019-06-26 2020-06-19 酸化珪素膜用研磨液組成物

Publications (2)

Publication Number Publication Date
CN114026189A CN114026189A (zh) 2022-02-08
CN114026189B true CN114026189B (zh) 2023-08-11

Family

ID=74061638

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080046236.2A Active CN114026189B (zh) 2019-06-26 2020-06-19 氧化硅膜用研磨液组合物

Country Status (6)

Country Link
US (1) US20220259458A1 (https=)
JP (1) JP7041714B2 (https=)
KR (1) KR102927898B1 (https=)
CN (1) CN114026189B (https=)
TW (1) TWI796575B (https=)
WO (1) WO2020262234A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102677799B1 (ko) * 2021-04-30 2024-06-24 주식회사 케이씨텍 연마 슬러리 조성물
JP7727510B2 (ja) * 2021-12-02 2025-08-21 花王株式会社 酸化珪素膜用研磨液組成物
WO2023127898A1 (ja) * 2021-12-28 2023-07-06 花王株式会社 酸化珪素膜用研磨液組成物

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1427025A (zh) * 2001-06-21 2003-07-02 花王株式会社 研磨液组合物
JP2007103485A (ja) * 2005-09-30 2007-04-19 Fujifilm Corp 研磨方法及びそれに用いる研磨液
CN101796160A (zh) * 2007-08-28 2010-08-04 卡伯特微电子公司 包含离子型聚电解质的铜化学机械抛光组合物及方法
CN102766407A (zh) * 2008-04-23 2012-11-07 日立化成工业株式会社 研磨剂及使用该研磨剂的基板研磨方法
CN103509468A (zh) * 2012-06-21 2014-01-15 安集微电子（上海）有限公司 一种用于硅通孔平坦化的化学机械抛光液
CN104284960A (zh) * 2012-03-14 2015-01-14 嘉柏微电子材料股份公司 具有高移除速率和低缺陷率的对氧化物和氮化物有选择性的cmp组合物
JP2017119783A (ja) * 2015-12-28 2017-07-06 花王株式会社 研磨液組成物
CN107207910A (zh) * 2015-02-03 2017-09-26 嘉柏微电子材料股份公司 用于移除硅氮化物的化学机械抛光组合物
JP2017182858A (ja) * 2016-03-31 2017-10-05 株式会社フジミインコーポレーテッド 研磨用組成物、基板の研磨方法および基板の製造方法
JP2017190381A (ja) * 2016-04-12 2017-10-19 花王株式会社 表面処理剤
JP2018053138A (ja) * 2016-09-29 2018-04-05 花王株式会社 金属酸化物粒子分散液
JP2018104497A (ja) * 2016-12-22 2018-07-05 花王株式会社 シリコンウェーハ用リンス剤組成物
JP2018107329A (ja) * 2016-12-27 2018-07-05 花王株式会社 酸化珪素膜用研磨液組成物
CN109844908A (zh) * 2016-10-28 2019-06-04 花王株式会社 硅晶片用冲洗剂组合物

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007146680A1 (en) * 2006-06-06 2007-12-21 Florida State University Research Foundation , Inc. Stabilized silica colloid
CN101610980A (zh) * 2007-02-08 2009-12-23 丰塔纳技术公司 粒子去除方法及化合物
JP5940270B2 (ja) * 2010-12-09 2016-06-29 花王株式会社 研磨液組成物
US10066126B2 (en) * 2016-01-06 2018-09-04 Cabot Microelectronics Corporation Tungsten processing slurry with catalyst
JP2017190363A (ja) * 2016-04-11 2017-10-19 花王株式会社 サファイア板用研磨液組成物
KR101797746B1 (ko) * 2016-06-29 2017-11-14 주식회사 케이씨 연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물
JP6864519B2 (ja) * 2017-03-31 2021-04-28 株式会社フジミインコーポレーテッド 研磨用組成物、磁気ディスク基板の製造方法および磁気ディスクの研磨方法

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1427025A (zh) * 2001-06-21 2003-07-02 花王株式会社 研磨液组合物
JP2007103485A (ja) * 2005-09-30 2007-04-19 Fujifilm Corp 研磨方法及びそれに用いる研磨液
CN101796160A (zh) * 2007-08-28 2010-08-04 卡伯特微电子公司 包含离子型聚电解质的铜化学机械抛光组合物及方法
CN104178088A (zh) * 2008-04-23 2014-12-03 日立化成工业株式会社 研磨剂及使用该研磨剂的基板研磨方法
CN102766407A (zh) * 2008-04-23 2012-11-07 日立化成工业株式会社 研磨剂及使用该研磨剂的基板研磨方法
CN104284960A (zh) * 2012-03-14 2015-01-14 嘉柏微电子材料股份公司 具有高移除速率和低缺陷率的对氧化物和氮化物有选择性的cmp组合物
CN103509468A (zh) * 2012-06-21 2014-01-15 安集微电子（上海）有限公司 一种用于硅通孔平坦化的化学机械抛光液
CN107207910A (zh) * 2015-02-03 2017-09-26 嘉柏微电子材料股份公司 用于移除硅氮化物的化学机械抛光组合物
JP2017119783A (ja) * 2015-12-28 2017-07-06 花王株式会社 研磨液組成物
JP2017182858A (ja) * 2016-03-31 2017-10-05 株式会社フジミインコーポレーテッド 研磨用組成物、基板の研磨方法および基板の製造方法
JP2017190381A (ja) * 2016-04-12 2017-10-19 花王株式会社 表面処理剤
JP2018053138A (ja) * 2016-09-29 2018-04-05 花王株式会社 金属酸化物粒子分散液
CN109844908A (zh) * 2016-10-28 2019-06-04 花王株式会社 硅晶片用冲洗剂组合物
JP2018104497A (ja) * 2016-12-22 2018-07-05 花王株式会社 シリコンウェーハ用リンス剤組成物
JP2018107329A (ja) * 2016-12-27 2018-07-05 花王株式会社 酸化珪素膜用研磨液組成物

Also Published As

Publication number Publication date
JP7041714B2 (ja) 2022-03-24
TW202104525A (zh) 2021-02-01
CN114026189A (zh) 2022-02-08
JP2021005704A (ja) 2021-01-14
KR102927898B1 (ko) 2026-02-13
US20220259458A1 (en) 2022-08-18
KR20220024175A (ko) 2022-03-03
TWI796575B (zh) 2023-03-21
WO2020262234A1 (ja) 2020-12-30

Similar Documents

Publication Publication Date Title
US9238753B2 (en) CMP compositions selective for oxide and nitride with high removal rate and low defectivity
CN105814163B (zh) 混合研磨剂型抛光组合物
TWI546372B (zh) 用於選擇性移除氮化矽之化學機械拋光（ｃｍｐ）組合物及方法
US9597768B1 (en) Selective nitride slurries with improved stability and improved polishing characteristics
KR20070085738A (ko) 산화규소에 대한 질화규소의 높은 제거율 비를 위한 연마조성물 및 방법
JP7133667B2 (ja) 酸化珪素膜用研磨液組成物
CN114026189B (zh) 氧化硅膜用研磨液组合物
US10626298B1 (en) Chemical mechanical polishing compositions and methods for suppressing the removal rate of amorphous silicon
KR20170097090A (ko) Sti 웨이퍼 연마에서 감소된 디싱을 나타내는 cmp 조성물
KR102005254B1 (ko) 기판의 폴리싱 방법
JP7685983B2 (ja) 酸化珪素膜用研磨液組成物
KR20190057406A (ko) 개선된 디싱 및 패턴 선택성을 갖는, 산화물 및 질화물에 대해 선택적인 cmp 조성물
CN118804960A (zh) 用于硅氧化物、硅氮化物及多晶硅的选择性及非选择性cmp的以氧化铈为主的浆料组合物
JP2020186367A (ja) 酸化珪素膜用研磨液組成物
TW202438613A (zh) 研磨劑、研磨方法、半導體零件之製造方法以及研磨用添加液
TW202014486A (zh) 於淺溝槽隔離(sti)化學機械平坦化研磨(cmp)的氧化物相對氮化物的高選擇性、低及均一的氧化物溝槽淺盤效應
KR20170012415A (ko) 높은 제거 속도 및 낮은 결함성을 갖는, 폴리실리콘 및 질화물에 비해 산화물에 대해 선택적인 cmp 조성물
JP7209583B2 (ja) 酸化珪素膜用研磨液組成物
JP2024500162A (ja) 高トポロジカル選択比のための自己停止ポリッシング組成物及び方法
JP7252073B2 (ja) 酸化珪素膜用研磨液組成物
JP7727510B2 (ja) 酸化珪素膜用研磨液組成物
JP2022085857A (ja) 酸化珪素膜用研磨液組成物
CN116507688A (zh) 氧化硅膜用研磨液组合物
WO2022113775A1 (ja) 酸化珪素膜用研磨液組成物
JP2006287051A (ja) 半導体基板研磨液組成物用添加剤

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant