TWI796575B - 氧化矽膜用研磨液組合物 - Google Patents

氧化矽膜用研磨液組合物 Download PDF

Info

Publication number
TWI796575B
TWI796575B TW109121321A TW109121321A TWI796575B TW I796575 B TWI796575 B TW I796575B TW 109121321 A TW109121321 A TW 109121321A TW 109121321 A TW109121321 A TW 109121321A TW I796575 B TWI796575 B TW I796575B
Authority
TW
Taiwan
Prior art keywords
polishing
component
structural unit
liquid composition
film
Prior art date
Application number
TW109121321A
Other languages
English (en)
Chinese (zh)
Other versions
TW202104525A (zh
Inventor
菅原将人
山口哲史
工藤功輝
Original Assignee
日商花王股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商花王股份有限公司 filed Critical 日商花王股份有限公司
Publication of TW202104525A publication Critical patent/TW202104525A/zh
Application granted granted Critical
Publication of TWI796575B publication Critical patent/TWI796575B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW109121321A 2019-06-26 2020-06-23 氧化矽膜用研磨液組合物 TWI796575B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019118741 2019-06-26
JP2019-118741 2019-06-26

Publications (2)

Publication Number Publication Date
TW202104525A TW202104525A (zh) 2021-02-01
TWI796575B true TWI796575B (zh) 2023-03-21

Family

ID=74061638

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109121321A TWI796575B (zh) 2019-06-26 2020-06-23 氧化矽膜用研磨液組合物

Country Status (6)

Country Link
US (1) US20220259458A1 (https=)
JP (1) JP7041714B2 (https=)
KR (1) KR102927898B1 (https=)
CN (1) CN114026189B (https=)
TW (1) TWI796575B (https=)
WO (1) WO2020262234A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102677799B1 (ko) * 2021-04-30 2024-06-24 주식회사 케이씨텍 연마 슬러리 조성물
JP7727510B2 (ja) * 2021-12-02 2025-08-21 花王株式会社 酸化珪素膜用研磨液組成物
WO2023127898A1 (ja) * 2021-12-28 2023-07-06 花王株式会社 酸化珪素膜用研磨液組成物

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103485A (ja) * 2005-09-30 2007-04-19 Fujifilm Corp 研磨方法及びそれに用いる研磨液
JP2010538457A (ja) * 2007-08-28 2010-12-09 キャボット マイクロエレクトロニクス コーポレイション イオン性高分子電解質を含有する銅ｃｍｐ組成物及び方法
JP2017182858A (ja) * 2016-03-31 2017-10-05 株式会社フジミインコーポレーテッド 研磨用組成物、基板の研磨方法および基板の製造方法
JP2018107329A (ja) * 2016-12-27 2018-07-05 花王株式会社 酸化珪素膜用研磨液組成物
JP2018104497A (ja) * 2016-12-22 2018-07-05 花王株式会社 シリコンウェーハ用リンス剤組成物

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY144587A (en) * 2001-06-21 2011-10-14 Kao Corp Polishing composition
WO2007146680A1 (en) * 2006-06-06 2007-12-21 Florida State University Research Foundation , Inc. Stabilized silica colloid
CN101610980A (zh) * 2007-02-08 2009-12-23 丰塔纳技术公司 粒子去除方法及化合物
CN104178088B (zh) * 2008-04-23 2016-08-17 日立化成株式会社 研磨剂及使用该研磨剂的基板研磨方法
JP5940270B2 (ja) * 2010-12-09 2016-06-29 花王株式会社 研磨液組成物
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
CN103509468B (zh) * 2012-06-21 2017-08-11 安集微电子（上海）有限公司 一种用于硅通孔平坦化的化学机械抛光液
US9803109B2 (en) * 2015-02-03 2017-10-31 Cabot Microelectronics Corporation CMP composition for silicon nitride removal
JP6618355B2 (ja) * 2015-12-28 2019-12-11 花王株式会社 研磨液組成物
US10066126B2 (en) * 2016-01-06 2018-09-04 Cabot Microelectronics Corporation Tungsten processing slurry with catalyst
JP2017190363A (ja) * 2016-04-11 2017-10-19 花王株式会社 サファイア板用研磨液組成物
JP6815092B2 (ja) * 2016-04-12 2021-01-20 花王株式会社 表面処理剤
KR101797746B1 (ko) * 2016-06-29 2017-11-14 주식회사 케이씨 연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물
JP6783609B2 (ja) * 2016-09-29 2020-11-11 花王株式会社 金属酸化物粒子分散液
JP7061862B2 (ja) * 2016-10-28 2022-05-02 花王株式会社 シリコンウェーハ用リンス剤組成物
JP6864519B2 (ja) * 2017-03-31 2021-04-28 株式会社フジミインコーポレーテッド 研磨用組成物、磁気ディスク基板の製造方法および磁気ディスクの研磨方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103485A (ja) * 2005-09-30 2007-04-19 Fujifilm Corp 研磨方法及びそれに用いる研磨液
JP2010538457A (ja) * 2007-08-28 2010-12-09 キャボット マイクロエレクトロニクス コーポレイション イオン性高分子電解質を含有する銅ｃｍｐ組成物及び方法
JP2017182858A (ja) * 2016-03-31 2017-10-05 株式会社フジミインコーポレーテッド 研磨用組成物、基板の研磨方法および基板の製造方法
JP2018104497A (ja) * 2016-12-22 2018-07-05 花王株式会社 シリコンウェーハ用リンス剤組成物
JP2018107329A (ja) * 2016-12-27 2018-07-05 花王株式会社 酸化珪素膜用研磨液組成物

Also Published As

Publication number Publication date
JP7041714B2 (ja) 2022-03-24
TW202104525A (zh) 2021-02-01
CN114026189A (zh) 2022-02-08
CN114026189B (zh) 2023-08-11
JP2021005704A (ja) 2021-01-14
KR102927898B1 (ko) 2026-02-13
US20220259458A1 (en) 2022-08-18
KR20220024175A (ko) 2022-03-03
WO2020262234A1 (ja) 2020-12-30

Similar Documents

Publication Publication Date Title
CN104284960B (zh) 具有高移除速率和低缺陷率的对氧化物和氮化物有选择性的cmp组合物
TWI546372B (zh) 用於選擇性移除氮化矽之化學機械拋光（ｃｍｐ）組合物及方法
US8906252B1 (en) CMP compositions selective for oxide and nitride with high removal rate and low defectivity
JP7133667B2 (ja) 酸化珪素膜用研磨液組成物
TWI500722B (zh) 包含無機粒子與聚合物粒子之化學機械拋光（ｃｍｐ）組成物
TWI796575B (zh) 氧化矽膜用研磨液組合物
CN108026432A (zh) 具有改善的稳定性和改善的抛光特性的选择性氮化物淤浆
TW201518489A (zh) 硏磨劑、硏磨劑組及基體的硏磨方法
CN107001860A (zh) 在浅沟槽隔离晶片的抛光中展现出减小的凹陷的化学机械抛光组合物
CN108495906B (zh) 含阳离子型聚合物添加剂的抛光组合物
JP7425660B2 (ja) 酸化珪素膜用研磨液組成物
TWI662096B (zh) 具有改善之凹陷及圖案選擇性之對氧化物及氮化物有選擇性之cmp組成物
JP7685983B2 (ja) 酸化珪素膜用研磨液組成物
JP2025505183A (ja) 酸化ケイ素、窒化ケイ素及びポリシリコンの選択的及び非選択的ｃｍｐ用のセリア系スラリー組成物
JP7475184B2 (ja) 酸化珪素膜用研磨液組成物
JP6811090B2 (ja) 酸化珪素膜用研磨液組成物
KR20170012415A (ko) 높은 제거 속도 및 낮은 결함성을 갖는, 폴리실리콘 및 질화물에 비해 산화물에 대해 선택적인 cmp 조성물
JP2024500162A (ja) 高トポロジカル選択比のための自己停止ポリッシング組成物及び方法
JP7252073B2 (ja) 酸化珪素膜用研磨液組成物
JP2006128689A (ja) 化学的機械的平坦化用の水性スラリー組成物
JP7727510B2 (ja) 酸化珪素膜用研磨液組成物
TW202231829A (zh) 氧化矽膜用研磨液組合物
JP2022085857A (ja) 酸化珪素膜用研磨液組成物
CN116323843A (zh) 氧化硅膜用研磨液组合物