KR102927898B1 - 산화규소막용 연마액 조성물 - Google Patents

산화규소막용 연마액 조성물

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Publication number
KR102927898B1
KR102927898B1 KR1020217042462A KR20217042462A KR102927898B1 KR 102927898 B1 KR102927898 B1 KR 102927898B1 KR 1020217042462 A KR1020217042462 A KR 1020217042462A KR 20217042462 A KR20217042462 A KR 20217042462A KR 102927898 B1 KR102927898 B1 KR 102927898B1
Authority
KR
South Korea
Prior art keywords
polishing
component
group
structural unit
hydrogen atom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217042462A
Other languages
English (en)
Korean (ko)
Other versions
KR20220024175A (ko
Inventor
마사토 스가하라
노리히토 야마구치
고키 구도
Original Assignee
카오카부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 카오카부시키가이샤 filed Critical 카오카부시키가이샤
Publication of KR20220024175A publication Critical patent/KR20220024175A/ko
Application granted granted Critical
Publication of KR102927898B1 publication Critical patent/KR102927898B1/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020217042462A 2019-06-26 2020-06-19 산화규소막용 연마액 조성물 Active KR102927898B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2019-118741 2019-06-26
JP2019118741 2019-06-26
PCT/JP2020/024130 WO2020262234A1 (ja) 2019-06-26 2020-06-19 酸化珪素膜用研磨液組成物

Publications (2)

Publication Number Publication Date
KR20220024175A KR20220024175A (ko) 2022-03-03
KR102927898B1 true KR102927898B1 (ko) 2026-02-13

Family

ID=74061638

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217042462A Active KR102927898B1 (ko) 2019-06-26 2020-06-19 산화규소막용 연마액 조성물

Country Status (6)

Country Link
US (1) US20220259458A1 (https=)
JP (1) JP7041714B2 (https=)
KR (1) KR102927898B1 (https=)
CN (1) CN114026189B (https=)
TW (1) TWI796575B (https=)
WO (1) WO2020262234A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102677799B1 (ko) * 2021-04-30 2024-06-24 주식회사 케이씨텍 연마 슬러리 조성물
JP7727510B2 (ja) * 2021-12-02 2025-08-21 花王株式会社 酸化珪素膜用研磨液組成物
WO2023127898A1 (ja) * 2021-12-28 2023-07-06 花王株式会社 酸化珪素膜用研磨液組成物

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103485A (ja) 2005-09-30 2007-04-19 Fujifilm Corp 研磨方法及びそれに用いる研磨液
JP2017119783A (ja) 2015-12-28 2017-07-06 花王株式会社 研磨液組成物
JP2017182858A (ja) * 2016-03-31 2017-10-05 株式会社フジミインコーポレーテッド 研磨用組成物、基板の研磨方法および基板の製造方法
JP2017190381A (ja) 2016-04-12 2017-10-19 花王株式会社 表面処理剤
KR101797746B1 (ko) * 2016-06-29 2017-11-14 주식회사 케이씨 연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물
JP2018053138A (ja) 2016-09-29 2018-04-05 花王株式会社 金属酸化物粒子分散液
JP2018107329A (ja) 2016-12-27 2018-07-05 花王株式会社 酸化珪素膜用研磨液組成物
JP2018174009A (ja) 2017-03-31 2018-11-08 株式会社フジミインコーポレーテッド 研磨用組成物、磁気ディスク基板の製造方法および磁気ディスクの研磨方法
US20190382697A1 (en) 2016-12-22 2019-12-19 Kao Corporation Rinse agent composition for silicon wafers

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
MY144587A (en) * 2001-06-21 2011-10-14 Kao Corp Polishing composition
WO2007146680A1 (en) * 2006-06-06 2007-12-21 Florida State University Research Foundation , Inc. Stabilized silica colloid
CN101610980A (zh) * 2007-02-08 2009-12-23 丰塔纳技术公司 粒子去除方法及化合物
US20090056231A1 (en) * 2007-08-28 2009-03-05 Daniela White Copper CMP composition containing ionic polyelectrolyte and method
CN104178088B (zh) * 2008-04-23 2016-08-17 日立化成株式会社 研磨剂及使用该研磨剂的基板研磨方法
JP5940270B2 (ja) * 2010-12-09 2016-06-29 花王株式会社 研磨液組成物
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
CN103509468B (zh) * 2012-06-21 2017-08-11 安集微电子（上海）有限公司 一种用于硅通孔平坦化的化学机械抛光液
US9803109B2 (en) * 2015-02-03 2017-10-31 Cabot Microelectronics Corporation CMP composition for silicon nitride removal
US10066126B2 (en) * 2016-01-06 2018-09-04 Cabot Microelectronics Corporation Tungsten processing slurry with catalyst
JP2017190363A (ja) * 2016-04-11 2017-10-19 花王株式会社 サファイア板用研磨液組成物
JP7061862B2 (ja) * 2016-10-28 2022-05-02 花王株式会社 シリコンウェーハ用リンス剤組成物

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103485A (ja) 2005-09-30 2007-04-19 Fujifilm Corp 研磨方法及びそれに用いる研磨液
JP2017119783A (ja) 2015-12-28 2017-07-06 花王株式会社 研磨液組成物
JP2017182858A (ja) * 2016-03-31 2017-10-05 株式会社フジミインコーポレーテッド 研磨用組成物、基板の研磨方法および基板の製造方法
JP2017190381A (ja) 2016-04-12 2017-10-19 花王株式会社 表面処理剤
KR101797746B1 (ko) * 2016-06-29 2017-11-14 주식회사 케이씨 연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물
JP2018053138A (ja) 2016-09-29 2018-04-05 花王株式会社 金属酸化物粒子分散液
US20190382697A1 (en) 2016-12-22 2019-12-19 Kao Corporation Rinse agent composition for silicon wafers
JP2018107329A (ja) 2016-12-27 2018-07-05 花王株式会社 酸化珪素膜用研磨液組成物
JP2018174009A (ja) 2017-03-31 2018-11-08 株式会社フジミインコーポレーテッド 研磨用組成物、磁気ディスク基板の製造方法および磁気ディスクの研磨方法

Also Published As

Publication number Publication date
JP7041714B2 (ja) 2022-03-24
TW202104525A (zh) 2021-02-01
CN114026189A (zh) 2022-02-08
CN114026189B (zh) 2023-08-11
JP2021005704A (ja) 2021-01-14
US20220259458A1 (en) 2022-08-18
KR20220024175A (ko) 2022-03-03
TWI796575B (zh) 2023-03-21
WO2020262234A1 (ja) 2020-12-30

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