CN113748521A - 薄膜晶体管及其制备方法、阵列基板、显示装置 - Google Patents
薄膜晶体管及其制备方法、阵列基板、显示装置 Download PDFInfo
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- CN113748521A CN113748521A CN202080000424.1A CN202080000424A CN113748521A CN 113748521 A CN113748521 A CN 113748521A CN 202080000424 A CN202080000424 A CN 202080000424A CN 113748521 A CN113748521 A CN 113748521A
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- amorphous silicon
- layer
- gate insulating
- thin film
- film transistor
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- 239000010409 thin film Substances 0.000 title claims abstract description 72
- 239000000758 substrate Substances 0.000 title claims description 42
- 238000002360 preparation method Methods 0.000 title description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 182
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 61
- 229920005591 polysilicon Polymers 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 42
- 239000010408 film Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 34
- 230000004888 barrier function Effects 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 230000000903 blocking effect Effects 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 15
- 150000002500 ions Chemical class 0.000 claims description 11
- 239000002210 silicon-based material Substances 0.000 claims description 10
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- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000005019 vapor deposition process Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
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- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
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Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1237—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a different composition, shape, layout or thickness of the gate insulator in different devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
Abstract
一种薄膜晶体管，包括：栅极、栅绝缘层、有源层、离子化非晶硅层、源极和漏极；所述栅绝缘层覆盖于所述栅极上；所述有源层设置于所述栅绝缘层远离所述栅极一侧；所述离子化非晶硅层设置于所述有源层远离所述栅极一侧，所述离子化非晶硅层与所述栅绝缘层接触；所述源极和所述漏极设置于所述离子化非晶硅层远离所述栅绝缘层一侧，所述源极和所述漏极通过所述离子化非晶硅层与所述有源层耦接。
Description
PCT国内申请，说明书已公开。
Claims (19)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/081781 WO2021189445A1 (zh) | 2020-03-27 | 2020-03-27 | 薄膜晶体管及其制备方法、阵列基板、显示装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113748521A true CN113748521A (zh) | 2021-12-03 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080000424.1A Pending CN113748521A (zh) | 2020-03-27 | 2020-03-27 | 薄膜晶体管及其制备方法、阵列基板、显示装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US11817460B2 (zh) |
| CN (1) | CN113748521A (zh) |
| WO (1) | WO2021189445A1 (zh) |
Citations (7)
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| CN105789327A (zh) * | 2016-05-17 | 2016-07-20 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、阵列基板、显示装置 |
| US20170162709A1 (en) * | 2014-11-07 | 2017-06-08 | Sakai Display Products Corporation | Method for Manufacturing Thin Film Transistor, Thin Film Transistor and Display Panel |
| CN107221503A (zh) * | 2017-06-02 | 2017-09-29 | 京东方科技集团股份有限公司 | 一种薄膜晶体管的制作方法、薄膜晶体管及显示基板 |
| CN107408579A (zh) * | 2015-03-03 | 2017-11-28 | 株式会社半导体能源研究所 | 半导体装置、该半导体装置的制造方法或包括该半导体装置的显示装置 |
| CN108028201A (zh) * | 2015-09-17 | 2018-05-11 | 堺显示器制品株式会社 | 薄膜晶体管和薄膜晶体管的制造方法 |
| CN109817723A (zh) * | 2019-01-24 | 2019-05-28 | 北京京东方技术开发有限公司 | 一种薄膜晶体管及其制备方法、阵列基板和显示装置 |
| CN110073496A (zh) * | 2017-11-22 | 2019-07-30 | 京东方科技集团股份有限公司 | 薄膜晶体管和显示设备 |
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| US6013930A (en) * | 1997-09-24 | 2000-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having laminated source and drain regions and method for producing the same |
| JP4493741B2 (ja) * | 1998-09-04 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR101287211B1 (ko) * | 2006-06-30 | 2013-07-16 | 엘지디스플레이 주식회사 | 박막트랜지스터의 제조방법 및 이를 이용한 ｔｆｔ 어레이기판의 제조방법 |
| KR101243809B1 (ko) * | 2006-06-30 | 2013-03-18 | 엘지디스플레이 주식회사 | 박막트랜지스터의 제조방법 및 이를 이용한 ｔｆｔ 어레이기판의 제조방법 |
| CN104282769B (zh) * | 2014-09-16 | 2017-05-10 | 京东方科技集团股份有限公司 | 薄膜晶体管的制备方法、阵列基板的制备方法 |
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-
2020
- 2020-03-27 WO PCT/CN2020/081781 patent/WO2021189445A1/zh active Application Filing
- 2020-03-27 CN CN202080000424.1A patent/CN113748521A/zh active Pending
- 2020-03-27 US US17/263,748 patent/US11817460B2/en active Active
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| US20170162709A1 (en) * | 2014-11-07 | 2017-06-08 | Sakai Display Products Corporation | Method for Manufacturing Thin Film Transistor, Thin Film Transistor and Display Panel |
| CN107408579A (zh) * | 2015-03-03 | 2017-11-28 | 株式会社半导体能源研究所 | 半导体装置、该半导体装置的制造方法或包括该半导体装置的显示装置 |
| CN108028201A (zh) * | 2015-09-17 | 2018-05-11 | 堺显示器制品株式会社 | 薄膜晶体管和薄膜晶体管的制造方法 |
| CN105789327A (zh) * | 2016-05-17 | 2016-07-20 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、阵列基板、显示装置 |
| CN107221503A (zh) * | 2017-06-02 | 2017-09-29 | 京东方科技集团股份有限公司 | 一种薄膜晶体管的制作方法、薄膜晶体管及显示基板 |
| CN110073496A (zh) * | 2017-11-22 | 2019-07-30 | 京东方科技集团股份有限公司 | 薄膜晶体管和显示设备 |
| CN109817723A (zh) * | 2019-01-24 | 2019-05-28 | 北京京东方技术开发有限公司 | 一种薄膜晶体管及其制备方法、阵列基板和显示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20220115413A1 (en) | 2022-04-14 |
| US11817460B2 (en) | 2023-11-14 |
| WO2021189445A1 (zh) | 2021-09-30 |
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