CN113474485A - 自动批次生产薄膜沉积系统及其使用方法 - Google Patents

自动批次生产薄膜沉积系统及其使用方法 Download PDF

Info

Publication number
CN113474485A
CN113474485A CN202080014430.2A CN202080014430A CN113474485A CN 113474485 A CN113474485 A CN 113474485A CN 202080014430 A CN202080014430 A CN 202080014430A CN 113474485 A CN113474485 A CN 113474485A
Authority
CN
China
Prior art keywords
wafers
transport
rack
wafer
transport wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080014430.2A
Other languages
English (en)
Chinese (zh)
Inventor
迈克尔·W·佩奇
迈克尔·J·瑟申
亚当·F·伯图赫
劳伦特·莱克蒂尔
图西夫·艾哈迈德·卡恩·霍萨科特·布登
拉梅什·普拉萨德·曼查拉多尔·那拉哈里·拉奥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Veeco Instruments Inc
Original Assignee
Veeco Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Veeco Instruments Inc filed Critical Veeco Instruments Inc
Publication of CN113474485A publication Critical patent/CN113474485A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3311—Horizontal transfer of a batch of workpieces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0464—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0466—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3202—Mechanical details, e.g. rollers or belts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3218—Conveying cassettes, containers or carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/34—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H10P72/3411—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H10P72/3412—Batch transfer of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/13—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7602—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
CN202080014430.2A 2019-02-19 2020-02-19 自动批次生产薄膜沉积系统及其使用方法 Pending CN113474485A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962807612P 2019-02-19 2019-02-19
US62/807,612 2019-02-19
PCT/US2020/018786 WO2020172244A1 (en) 2019-02-19 2020-02-19 Automated batch production thin film deposition systems and methods of using the same

Publications (1)

Publication Number Publication Date
CN113474485A true CN113474485A (zh) 2021-10-01

Family

ID=72143899

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080014430.2A Pending CN113474485A (zh) 2019-02-19 2020-02-19 自动批次生产薄膜沉积系统及其使用方法

Country Status (8)

Country Link
US (1) US12400894B2 (https=)
EP (1) EP3918106A4 (https=)
JP (1) JP7573549B2 (https=)
KR (1) KR102872606B1 (https=)
CN (1) CN113474485A (https=)
SG (1) SG11202108920SA (https=)
TW (1) TWI842835B (https=)
WO (1) WO2020172244A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115458441A (zh) * 2022-09-19 2022-12-09 上海谙邦半导体设备有限公司 一种等离子体去胶装置
CN117976592A (zh) * 2024-02-18 2024-05-03 上海稷以科技有限公司 晶圆传送平台及方法
CN118516764A (zh) * 2024-05-15 2024-08-20 国鲸合创(青岛)科技有限公司 蓝宝石基掺铝氧化锌透明导电单晶薄膜材料生产成套设备
CN119265549A (zh) * 2024-09-30 2025-01-07 苏州精材半导体科技有限公司 连续式化学气相沉积方法、系统、程序和存储介质

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102411440B1 (ko) * 2021-10-21 2022-06-22 주식회사 기가레인 웨이퍼 처리 시스템 및 웨이퍼 처리 방법
JP7429252B2 (ja) * 2022-03-18 2024-02-07 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、基板処理方法及びプログラム
WO2025083109A2 (de) 2023-10-18 2025-04-24 Aixtron Se Be- und entladezyklus für ein cvd-reaktorsystem
DE102023128552A1 (de) * 2023-10-18 2025-04-24 Aixtron Se Be- und Entladezyklus für ein CVD-Reaktorsystem

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010014266A1 (en) * 1990-04-19 2001-08-16 Masato M. Toshima Dual cassette load lock
US20010052392A1 (en) * 1998-02-25 2001-12-20 Masahiko Nakamura Multichamber substrate processing apparatus
US20030098125A1 (en) * 2001-11-29 2003-05-29 Jae-Hyuck An Method of and apparatus for performing sequential processes requiring different amounts of time in the manufacturing of semiconductor devices
US20080185308A1 (en) * 2007-02-01 2008-08-07 Tokyo Electron Limited Semiconductor wafer boat for batch processing
CN101438387A (zh) * 2006-06-26 2009-05-20 应用材料股份有限公司 用于ald和cvd的批式处理平台
CN101461051A (zh) * 2006-05-03 2009-06-17 新动力等离子体株式会社 基板传输设备及使用该设备的高速基板处理系统

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62222625A (ja) * 1986-03-25 1987-09-30 Shimizu Constr Co Ltd 半導体製造装置
US5516732A (en) * 1992-12-04 1996-05-14 Sony Corporation Wafer processing machine vacuum front end method and apparatus
US6712577B2 (en) * 1994-04-28 2004-03-30 Semitool, Inc. Automated semiconductor processing system
JP4386983B2 (ja) * 1998-02-25 2009-12-16 キヤノンアネルバ株式会社 基板処理装置、マルチチャンバー基板処理装置及び電子デバイス製作方法
US20020159864A1 (en) 2001-04-30 2002-10-31 Applied Materials, Inc. Triple chamber load lock
JP2005203458A (ja) 2004-01-14 2005-07-28 Hitachi Kokusai Electric Inc 基板処理装置
US20060156979A1 (en) * 2004-11-22 2006-07-20 Applied Materials, Inc. Substrate processing apparatus using a batch processing chamber
TWI476855B (zh) * 2006-05-03 2015-03-11 吉恩股份有限公司 基板傳輸設備、和使用該設備的高速基板處理系統
US9328417B2 (en) 2008-11-01 2016-05-03 Ultratech, Inc. System and method for thin film deposition
US9175388B2 (en) 2008-11-01 2015-11-03 Ultratech, Inc. Reaction chamber with removable liner
JP5274339B2 (ja) * 2009-03-30 2013-08-28 大日本スクリーン製造株式会社 基板処理装置および基板搬送方法
KR101167947B1 (ko) 2010-03-19 2012-07-23 (주) 엔피홀딩스 스퍼터링 시스템
CN102439710B (zh) 2010-03-25 2017-03-29 应用材料公司 用于多个基材处理的分段基材负载
US9378994B2 (en) 2013-03-15 2016-06-28 Applied Materials, Inc. Multi-position batch load lock apparatus and systems and methods including same
DE202016104588U1 (de) * 2015-09-03 2016-11-30 Veeco Instruments Inc. Mehrkammersystem für chemische Gasphasenabscheidung
WO2017134853A1 (ja) * 2016-02-05 2017-08-10 株式会社国際電気セミコンダクターサービス 基板処理装置および半導体装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010014266A1 (en) * 1990-04-19 2001-08-16 Masato M. Toshima Dual cassette load lock
US20010052392A1 (en) * 1998-02-25 2001-12-20 Masahiko Nakamura Multichamber substrate processing apparatus
US20030098125A1 (en) * 2001-11-29 2003-05-29 Jae-Hyuck An Method of and apparatus for performing sequential processes requiring different amounts of time in the manufacturing of semiconductor devices
CN101461051A (zh) * 2006-05-03 2009-06-17 新动力等离子体株式会社 基板传输设备及使用该设备的高速基板处理系统
CN101438387A (zh) * 2006-06-26 2009-05-20 应用材料股份有限公司 用于ald和cvd的批式处理平台
US20080185308A1 (en) * 2007-02-01 2008-08-07 Tokyo Electron Limited Semiconductor wafer boat for batch processing

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115458441A (zh) * 2022-09-19 2022-12-09 上海谙邦半导体设备有限公司 一种等离子体去胶装置
CN117976592A (zh) * 2024-02-18 2024-05-03 上海稷以科技有限公司 晶圆传送平台及方法
CN118516764A (zh) * 2024-05-15 2024-08-20 国鲸合创(青岛)科技有限公司 蓝宝石基掺铝氧化锌透明导电单晶薄膜材料生产成套设备
CN118516764B (zh) * 2024-05-15 2024-10-25 国鲸合创(青岛)科技有限公司 蓝宝石基掺铝氧化锌透明导电单晶薄膜材料生产成套设备
CN119265549A (zh) * 2024-09-30 2025-01-07 苏州精材半导体科技有限公司 连续式化学气相沉积方法、系统、程序和存储介质
CN119265549B (zh) * 2024-09-30 2025-09-26 苏州精材半导体科技有限公司 连续式化学气相沉积方法、系统、程序和存储介质

Also Published As

Publication number Publication date
JP2022521860A (ja) 2022-04-12
US20220076976A1 (en) 2022-03-10
WO2020172244A8 (en) 2021-08-12
KR102872606B1 (ko) 2025-10-17
US12400894B2 (en) 2025-08-26
WO2020172244A1 (en) 2020-08-27
EP3918106A1 (en) 2021-12-08
TW202104661A (zh) 2021-02-01
KR20210118950A (ko) 2021-10-01
SG11202108920SA (en) 2021-09-29
JP7573549B2 (ja) 2024-10-25
EP3918106A4 (en) 2022-11-02
TWI842835B (zh) 2024-05-21

Similar Documents

Publication Publication Date Title
CN113474485A (zh) 自动批次生产薄膜沉积系统及其使用方法
US10679879B2 (en) Substrate processing apparatus
US20090016853A1 (en) In-line wafer robotic processing system
CN101689528B (zh) 基板处理装置和基板处理方法
KR101452543B1 (ko) 기판 처리 시스템
TWI637457B (zh) 基板對齊裝置、基板處理裝置、基板排列裝置、基板對齊方法、基板處理方法及基板排列方法
CN104115265B (zh) 基板处理模块以及包含该基板处理模块的基板处理装置
JP6282983B2 (ja) 基板処理装置
JP5545795B2 (ja) 基板処理装置及び半導体製造装置管理方法
KR101478856B1 (ko) 기판 처리 시스템
CN206742216U (zh) 基板传送装置及包含该基板传送装置的基板处理系统
JPH08148503A (ja) 熱処理装置
JP2002110496A (ja) 半導体製造装置
JP2004011005A (ja) 処理装置および処理方法
JP2002093877A (ja) 半導体製造装置
JP4194262B2 (ja) 基板処理装置及び基板処理方法
CN108666231A (zh) 基板处理系统、基板传送装置和传送方法
TWI283037B (en) Cluster-tool wafer transporting device and method
JP5031960B2 (ja) 基板処理装置および半導体装置の製造方法
JPH09181060A (ja) 薄膜成膜装置
TW202044352A (zh) 基板處理裝置、反應管及半導體裝置之製造方法
JP2003007796A (ja) 基板処理装置
JP4456727B2 (ja) 半導体装置の製造方法および基板処理装置
JP4224192B2 (ja) 半導体装置の製造方法
JP2012059724A (ja) 基板処理システム

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20211001