CN113196489A - 摄像装置 - Google Patents

摄像装置 Download PDF

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Publication number
CN113196489A
CN113196489A CN202080007020.5A CN202080007020A CN113196489A CN 113196489 A CN113196489 A CN 113196489A CN 202080007020 A CN202080007020 A CN 202080007020A CN 113196489 A CN113196489 A CN 113196489A
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CN
China
Prior art keywords
pixel
electrode
blocking layer
photoelectric conversion
layer
Prior art date
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Pending
Application number
CN202080007020.5A
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English (en)
Chinese (zh)
Inventor
宍戸三四郎
小柳贵裕
留河优子
町田真一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of CN113196489A publication Critical patent/CN113196489A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202080007020.5A 2019-04-25 2020-03-17 摄像装置 Pending CN113196489A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-084259 2019-04-25
JP2019084259 2019-04-25
PCT/JP2020/011717 WO2020217783A1 (ja) 2019-04-25 2020-03-17 撮像装置

Publications (1)

Publication Number Publication Date
CN113196489A true CN113196489A (zh) 2021-07-30

Family

ID=72942536

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080007020.5A Pending CN113196489A (zh) 2019-04-25 2020-03-17 摄像装置

Country Status (4)

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US (2) US12207483B2 (https=)
JP (2) JP7624608B2 (https=)
CN (1) CN113196489A (https=)
WO (1) WO2020217783A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019155841A1 (ja) * 2018-02-07 2019-08-15 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および撮像装置
WO2025169257A1 (ja) * 2024-02-05 2025-08-14 ソニーセミコンダクタソリューションズ株式会社 光検出装置

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US20160119563A1 (en) * 2014-10-23 2016-04-28 Panasonic Intellectual Property Management Co., Ltd. Imaging device and image acquisition device
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JP2018152393A (ja) * 2017-03-10 2018-09-27 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
CN108695356A (zh) * 2017-04-10 2018-10-23 松下知识产权经营株式会社 摄像装置
CN109300924A (zh) * 2017-07-24 2019-02-01 松下知识产权经营株式会社 摄像装置

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JP4444371B1 (ja) * 2009-09-01 2010-03-31 富士フイルム株式会社 撮像素子及び撮像装置
JP4783861B1 (ja) * 2010-02-25 2011-09-28 富士フイルム株式会社 撮像素子、撮像素子の製造方法、撮像装置
CN103444167B (zh) * 2011-04-08 2017-09-29 松下知识产权经营株式会社 固体摄像装置的驱动方法
WO2012176390A1 (ja) 2011-06-23 2012-12-27 パナソニック株式会社 固体撮像装置
JP2013084647A (ja) 2011-10-06 2013-05-09 Nippon Hoso Kyokai <Nhk> 多層型撮像素子
JP5814293B2 (ja) 2012-05-24 2015-11-17 富士フイルム株式会社 光電変換素子および撮像素子、ならびに、光電変換素子の製造方法および撮像素子の製造方法
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JP6231435B2 (ja) 2014-05-20 2017-11-15 富士フイルム株式会社 固体撮像素子
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JP2016127264A (ja) 2014-12-26 2016-07-11 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
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JP2017168812A (ja) * 2016-03-10 2017-09-21 パナソニックＩｐマネジメント株式会社 撮像装置
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CN109863607A (zh) 2016-10-11 2019-06-07 出光兴产株式会社 结构物、该结构物的制造方法、半导体元件以及电子电路
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CN107403816B (zh) 2017-08-18 2023-10-31 展谱光电科技（上海）有限公司 多光谱摄像装置及其制作方法
US11552268B2 (en) * 2018-03-19 2023-01-10 Sony Semiconductor Solutions Corporation Solid-state imaging element and solid-state imaging device
JP7483324B2 (ja) 2019-03-27 2024-05-15 キヤノン株式会社 半導体装置、光検出システム、発光システム、および移動体

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080237481A1 (en) * 2007-03-29 2008-10-02 Varian Medical Systems Technologies, Inc. Corrosion barrier layer for photoconductive X-ray imagers
CN101998070A (zh) * 2009-08-19 2011-03-30 株式会社东芝 固体摄像装置及其制造方法
JP2012114160A (ja) * 2010-11-22 2012-06-14 Panasonic Corp 固体撮像装置及びその製造方法
US20160119563A1 (en) * 2014-10-23 2016-04-28 Panasonic Intellectual Property Management Co., Ltd. Imaging device and image acquisition device
WO2016104177A1 (ja) * 2014-12-26 2016-06-30 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP2018152393A (ja) * 2017-03-10 2018-09-27 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
CN108695356A (zh) * 2017-04-10 2018-10-23 松下知识产权经营株式会社 摄像装置
CN109300924A (zh) * 2017-07-24 2019-02-01 松下知识产权经营株式会社 摄像装置

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JP2025010567A (ja) 2025-01-22
JPWO2020217783A1 (https=) 2020-10-29
US20250107312A1 (en) 2025-03-27
WO2020217783A1 (ja) 2020-10-29
JP7624608B2 (ja) 2025-01-31
US20210313399A1 (en) 2021-10-07
JP7759598B2 (ja) 2025-10-24
US12207483B2 (en) 2025-01-21

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