CN1129356A - 具有增强的聚焦裕度的半导体集成电路器件制造方法 - Google Patents
具有增强的聚焦裕度的半导体集成电路器件制造方法 Download PDFInfo
- Publication number
- CN1129356A CN1129356A CN95115539A CN95115539A CN1129356A CN 1129356 A CN1129356 A CN 1129356A CN 95115539 A CN95115539 A CN 95115539A CN 95115539 A CN95115539 A CN 95115539A CN 1129356 A CN1129356 A CN 1129356A
- Authority
- CN
- China
- Prior art keywords
- mentioned
- barrier film
- semiconductor
- semiconductor substrate
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6188040A JPH0855968A (ja) | 1994-08-10 | 1994-08-10 | 半導体集積回路装置の製造方法 |
| JP188040/94 | 1994-08-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1129356A true CN1129356A (zh) | 1996-08-21 |
Family
ID=16216628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN95115539A Pending CN1129356A (zh) | 1994-08-10 | 1995-08-10 | 具有增强的聚焦裕度的半导体集成电路器件制造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5670409A (enExample) |
| JP (1) | JPH0855968A (enExample) |
| KR (1) | KR960009039A (enExample) |
| CN (1) | CN1129356A (enExample) |
| TW (1) | TW277160B (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1032316A (ja) * | 1996-07-16 | 1998-02-03 | Nec Corp | 半導体記憶装置及びその製造方法 |
| JP3941133B2 (ja) | 1996-07-18 | 2007-07-04 | 富士通株式会社 | 半導体装置およびその製造方法 |
| JP3164026B2 (ja) * | 1996-08-21 | 2001-05-08 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| TW377495B (en) * | 1996-10-04 | 1999-12-21 | Hitachi Ltd | Method of manufacturing semiconductor memory cells and the same apparatus |
| WO1998028789A1 (en) * | 1996-12-20 | 1998-07-02 | Hitachi, Ltd. | Semiconductor storage device and method for manufacturing the same |
| KR100310470B1 (ko) * | 1997-12-30 | 2002-05-09 | 박종섭 | 양면반도체메모리소자및그제조방법 |
| JP3147095B2 (ja) * | 1998-07-24 | 2001-03-19 | 日本電気株式会社 | 半導体記憶装置 |
| KR100270963B1 (ko) * | 1998-09-22 | 2000-11-01 | 윤종용 | 머지드 디램 앤 로직 및 그 제조방법 |
| TW429579B (en) * | 1999-08-23 | 2001-04-11 | Taiwan Semiconductor Mfg | Manufacturing method of inter-layer dielectric |
| US7829400B2 (en) * | 2005-01-12 | 2010-11-09 | Sharp Kabushiki Kaisha | Semiconductor device fabrication method and semiconductor device |
| JP4602818B2 (ja) * | 2005-03-30 | 2010-12-22 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| US8853083B2 (en) * | 2013-01-23 | 2014-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chemical mechanical polish in the growth of semiconductor regions |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5247197A (en) * | 1987-11-05 | 1993-09-21 | Fujitsu Limited | Dynamic random access memory device having improved contact hole structures |
| US5235199A (en) * | 1988-03-25 | 1993-08-10 | Kabushiki Kaisha Toshiba | Semiconductor memory with pad electrode and bit line under stacked capacitor |
| JP2640174B2 (ja) * | 1990-10-30 | 1997-08-13 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
-
1994
- 1994-08-10 JP JP6188040A patent/JPH0855968A/ja active Pending
-
1995
- 1995-07-31 TW TW084107944A patent/TW277160B/zh not_active IP Right Cessation
- 1995-08-03 KR KR1019950023968A patent/KR960009039A/ko not_active Withdrawn
- 1995-08-07 US US08/511,810 patent/US5670409A/en not_active Expired - Lifetime
- 1995-08-10 CN CN95115539A patent/CN1129356A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW277160B (enExample) | 1996-06-01 |
| JPH0855968A (ja) | 1996-02-27 |
| KR960009039A (ko) | 1996-03-22 |
| US5670409A (en) | 1997-09-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C01 | Deemed withdrawal of patent application (patent law 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |