CN1129356A - 具有增强的聚焦裕度的半导体集成电路器件制造方法 - Google Patents

具有增强的聚焦裕度的半导体集成电路器件制造方法 Download PDF

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Publication number
CN1129356A
CN1129356A CN95115539A CN95115539A CN1129356A CN 1129356 A CN1129356 A CN 1129356A CN 95115539 A CN95115539 A CN 95115539A CN 95115539 A CN95115539 A CN 95115539A CN 1129356 A CN1129356 A CN 1129356A
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CN
China
Prior art keywords
mentioned
barrier film
semiconductor
semiconductor substrate
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN95115539A
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English (en)
Chinese (zh)
Inventor
大鸟浩
梶谷一彦
宫沢一幸
久保征治
小池淳义
金井史幸
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Hitachi Ltd
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Hitachi Ltd
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Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of CN1129356A publication Critical patent/CN1129356A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B99/00Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN95115539A 1994-08-10 1995-08-10 具有增强的聚焦裕度的半导体集成电路器件制造方法 Pending CN1129356A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6188040A JPH0855968A (ja) 1994-08-10 1994-08-10 半導体集積回路装置の製造方法
JP188040/94 1994-08-10

Publications (1)

Publication Number Publication Date
CN1129356A true CN1129356A (zh) 1996-08-21

Family

ID=16216628

Family Applications (1)

Application Number Title Priority Date Filing Date
CN95115539A Pending CN1129356A (zh) 1994-08-10 1995-08-10 具有增强的聚焦裕度的半导体集成电路器件制造方法

Country Status (5)

Country Link
US (1) US5670409A (enExample)
JP (1) JPH0855968A (enExample)
KR (1) KR960009039A (enExample)
CN (1) CN1129356A (enExample)
TW (1) TW277160B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1032316A (ja) * 1996-07-16 1998-02-03 Nec Corp 半導体記憶装置及びその製造方法
JP3941133B2 (ja) 1996-07-18 2007-07-04 富士通株式会社 半導体装置およびその製造方法
JP3164026B2 (ja) * 1996-08-21 2001-05-08 日本電気株式会社 半導体装置及びその製造方法
TW377495B (en) * 1996-10-04 1999-12-21 Hitachi Ltd Method of manufacturing semiconductor memory cells and the same apparatus
WO1998028789A1 (en) * 1996-12-20 1998-07-02 Hitachi, Ltd. Semiconductor storage device and method for manufacturing the same
KR100310470B1 (ko) * 1997-12-30 2002-05-09 박종섭 양면반도체메모리소자및그제조방법
JP3147095B2 (ja) * 1998-07-24 2001-03-19 日本電気株式会社 半導体記憶装置
KR100270963B1 (ko) * 1998-09-22 2000-11-01 윤종용 머지드 디램 앤 로직 및 그 제조방법
TW429579B (en) * 1999-08-23 2001-04-11 Taiwan Semiconductor Mfg Manufacturing method of inter-layer dielectric
US7829400B2 (en) * 2005-01-12 2010-11-09 Sharp Kabushiki Kaisha Semiconductor device fabrication method and semiconductor device
JP4602818B2 (ja) * 2005-03-30 2010-12-22 富士通セミコンダクター株式会社 半導体装置の製造方法
US8853083B2 (en) * 2013-01-23 2014-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical mechanical polish in the growth of semiconductor regions

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247197A (en) * 1987-11-05 1993-09-21 Fujitsu Limited Dynamic random access memory device having improved contact hole structures
US5235199A (en) * 1988-03-25 1993-08-10 Kabushiki Kaisha Toshiba Semiconductor memory with pad electrode and bit line under stacked capacitor
JP2640174B2 (ja) * 1990-10-30 1997-08-13 三菱電機株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
TW277160B (enExample) 1996-06-01
JPH0855968A (ja) 1996-02-27
KR960009039A (ko) 1996-03-22
US5670409A (en) 1997-09-23

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SE01 Entry into force of request for substantive examination
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WD01 Invention patent application deemed withdrawn after publication