CN1190848C - 半导体集成电路装置及其制造方法 - Google Patents
半导体集成电路装置及其制造方法 Download PDFInfo
- Publication number
- CN1190848C CN1190848C CNB988064448A CN98806444A CN1190848C CN 1190848 C CN1190848 C CN 1190848C CN B988064448 A CNB988064448 A CN B988064448A CN 98806444 A CN98806444 A CN 98806444A CN 1190848 C CN1190848 C CN 1190848C
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 108
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 238000000034 method Methods 0.000 claims description 89
- 239000004020 conductor Substances 0.000 claims description 83
- 238000002955 isolation Methods 0.000 claims description 46
- 238000005530 etching Methods 0.000 claims description 35
- 230000015572 biosynthetic process Effects 0.000 claims description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 30
- 229920005591 polysilicon Polymers 0.000 claims description 30
- 238000001259 photo etching Methods 0.000 claims description 23
- 208000005189 Embolism Diseases 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 5
- 230000008676 import Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 59
- 229910052814 silicon oxide Inorganic materials 0.000 description 59
- 229910052581 Si3N4 Inorganic materials 0.000 description 41
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 41
- 239000010410 layer Substances 0.000 description 30
- 238000005755 formation reaction Methods 0.000 description 23
- 229920002120 photoresistant polymer Polymers 0.000 description 20
- 238000005229 chemical vapour deposition Methods 0.000 description 19
- 230000001815 facial effect Effects 0.000 description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 14
- 229910052698 phosphorus Inorganic materials 0.000 description 14
- 239000011574 phosphorus Substances 0.000 description 14
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 13
- 101100204059 Caenorhabditis elegans trap-2 gene Proteins 0.000 description 10
- 125000006850 spacer group Chemical group 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 238000002224 dissection Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 238000003701 mechanical milling Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000002459 sustained effect Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 241000272168 Laridae Species 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (24)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP164766/1997 | 1997-06-20 | ||
JP16476697 | 1997-06-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1261461A CN1261461A (zh) | 2000-07-26 |
CN1190848C true CN1190848C (zh) | 2005-02-23 |
Family
ID=15799531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB988064448A Expired - Fee Related CN1190848C (zh) | 1997-06-20 | 1998-06-18 | 半导体集成电路装置及其制造方法 |
Country Status (7)
Country | Link |
---|---|
US (3) | US6483136B1 (zh) |
EP (1) | EP1018766A1 (zh) |
JP (1) | JP4215280B2 (zh) |
KR (1) | KR100760791B1 (zh) |
CN (1) | CN1190848C (zh) |
TW (1) | TW454339B (zh) |
WO (1) | WO1998059372A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8478202B2 (en) | 2004-06-18 | 2013-07-02 | Qualcomm Incorporated | Power control for a wireless communication system utilizing orthogonal multiplexing |
US8488487B2 (en) | 2006-09-08 | 2013-07-16 | Qualcomm Incorporated | Method and apparatus for fast other sector interference (OSI) adjustment |
US8516314B2 (en) | 2004-06-18 | 2013-08-20 | Qualcomm Incorporated | Robust erasure detection and erasure-rate-based closed loop power control |
US8849210B2 (en) | 2005-03-15 | 2014-09-30 | Qualcomm Incorporated | Interference control in a wireless communication system |
US8879425B2 (en) | 2005-03-15 | 2014-11-04 | Qualcomm Incorporated | Interference control in a wireless communication system |
US8929908B2 (en) | 2005-10-27 | 2015-01-06 | Qualcomm Incorporated | Method and apparatus for estimating reverse link loading in a wireless communication system |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006245625A (ja) * | 1997-06-20 | 2006-09-14 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP2001203263A (ja) * | 2000-01-20 | 2001-07-27 | Hitachi Ltd | 半導体集積回路装置の製造方法および半導体集積回路装置 |
US20070114631A1 (en) * | 2000-01-20 | 2007-05-24 | Hidenori Sato | Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated circuit device |
JP4226205B2 (ja) * | 2000-08-11 | 2009-02-18 | 富士雄 舛岡 | 半導体記憶装置の製造方法 |
KR100391988B1 (ko) * | 2001-02-09 | 2003-07-22 | 삼성전자주식회사 | 디램 셀 및 그 제조방법 |
KR100483035B1 (ko) * | 2001-03-30 | 2005-04-15 | 샤프 가부시키가이샤 | 반도체 기억장치 및 그 제조방법 |
JP3963664B2 (ja) * | 2001-06-22 | 2007-08-22 | 富士雄 舛岡 | 半導体記憶装置及びその製造方法 |
EP1271652A3 (en) * | 2001-06-22 | 2004-05-06 | Fujio Masuoka | A semiconductor memory and its production process |
JP3875047B2 (ja) * | 2001-06-22 | 2007-01-31 | シャープ株式会社 | 半導体基板の面方位依存性評価方法及びそれを用いた半導体装置 |
JP2003273245A (ja) * | 2002-03-15 | 2003-09-26 | Hitachi Ltd | 半導体記憶装置 |
JP2004096065A (ja) * | 2002-07-08 | 2004-03-25 | Renesas Technology Corp | 半導体記憶装置およびその製造方法 |
KR100866710B1 (ko) * | 2002-07-18 | 2008-11-03 | 주식회사 하이닉스반도체 | 반도체 소자의 워드라인 형성 방법 |
JP2004146522A (ja) * | 2002-10-23 | 2004-05-20 | Renesas Technology Corp | キャパシタを有する半導体装置 |
KR100914972B1 (ko) * | 2003-03-12 | 2009-09-02 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
JP4591809B2 (ja) * | 2003-06-27 | 2010-12-01 | エルピーダメモリ株式会社 | 微細化に対応したメモリアレイ領域のレイアウト方法 |
KR100577610B1 (ko) * | 2003-07-15 | 2006-05-10 | 삼성전자주식회사 | 반도체 장치, 반도체 장치의 제조 방법 및 에스램 장치,에스램 장치 제조 방법. |
US7479452B2 (en) * | 2005-04-12 | 2009-01-20 | Promos Technologies Inc. | Method of forming contact plugs |
KR100735753B1 (ko) * | 2005-10-04 | 2007-07-06 | 삼성전자주식회사 | 공유된 비트라인을 갖는 플래쉬 메모리 소자 및 그의제조방법 |
KR100660880B1 (ko) * | 2005-10-12 | 2006-12-26 | 삼성전자주식회사 | 복수의 스토리지 노드 전극들을 구비하는 반도체 메모리소자의 제조 방법 |
US8852851B2 (en) | 2006-07-10 | 2014-10-07 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
JP2008300381A (ja) * | 2007-05-29 | 2008-12-11 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US8087985B2 (en) * | 2007-07-03 | 2012-01-03 | Katz Marcus A | Late bet Baccarat |
JP2009253144A (ja) * | 2008-04-09 | 2009-10-29 | Toshiba Corp | 半導体装置およびその製造方法 |
US7989307B2 (en) | 2008-05-05 | 2011-08-02 | Micron Technology, Inc. | Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same |
US10151981B2 (en) * | 2008-05-22 | 2018-12-11 | Micron Technology, Inc. | Methods of forming structures supported by semiconductor substrates |
US8273634B2 (en) | 2008-12-04 | 2012-09-25 | Micron Technology, Inc. | Methods of fabricating substrates |
US8247302B2 (en) | 2008-12-04 | 2012-08-21 | Micron Technology, Inc. | Methods of fabricating substrates |
US8796155B2 (en) | 2008-12-04 | 2014-08-05 | Micron Technology, Inc. | Methods of fabricating substrates |
US7919792B2 (en) * | 2008-12-18 | 2011-04-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Standard cell architecture and methods with variable design rules |
KR101087830B1 (ko) * | 2009-01-05 | 2011-11-30 | 주식회사 하이닉스반도체 | 반도체 소자의 레이아웃 |
US8268543B2 (en) | 2009-03-23 | 2012-09-18 | Micron Technology, Inc. | Methods of forming patterns on substrates |
SG175752A1 (en) | 2009-04-21 | 2011-12-29 | Tetrasun Inc | High-efficiency solar cell structures and methods of manufacture |
US9330934B2 (en) | 2009-05-18 | 2016-05-03 | Micron Technology, Inc. | Methods of forming patterns on substrates |
US20110129991A1 (en) * | 2009-12-02 | 2011-06-02 | Kyle Armstrong | Methods Of Patterning Materials, And Methods Of Forming Memory Cells |
CN105789337B (zh) * | 2010-03-26 | 2017-09-26 | 泰特拉桑有限公司 | 贯穿包括结构和制造方法的高效率晶体太阳能电池中的钝化电介质层的屏蔽电触点和掺杂 |
US8518788B2 (en) | 2010-08-11 | 2013-08-27 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US8455341B2 (en) | 2010-09-02 | 2013-06-04 | Micron Technology, Inc. | Methods of forming features of integrated circuitry |
WO2012146630A1 (en) | 2011-04-29 | 2012-11-01 | F. Hoffmann-La Roche Ag | N-terminal acylated polypeptides, methods for their production and uses thereof |
US8575032B2 (en) | 2011-05-05 | 2013-11-05 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
JP2013012553A (ja) | 2011-06-28 | 2013-01-17 | Toshiba Corp | 半導体記憶装置 |
US8635573B2 (en) * | 2011-08-01 | 2014-01-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a semiconductor device having a defined minimum gate spacing between adjacent gate structures |
US9076680B2 (en) | 2011-10-18 | 2015-07-07 | Micron Technology, Inc. | Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array |
US9177794B2 (en) | 2012-01-13 | 2015-11-03 | Micron Technology, Inc. | Methods of patterning substrates |
US8629048B1 (en) | 2012-07-06 | 2014-01-14 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
JP6457829B2 (ja) * | 2015-02-05 | 2019-01-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10854518B2 (en) * | 2018-10-30 | 2020-12-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Configuring different via sizes for bridging risk reduction and performance improvement |
CN111640743B (zh) * | 2019-06-05 | 2022-02-08 | 福建省晋华集成电路有限公司 | 存储器及其形成方法 |
US10998319B1 (en) * | 2020-02-25 | 2021-05-04 | Nanya Technology Corporation | Memory structure |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2624736B2 (ja) * | 1988-01-14 | 1997-06-25 | 株式会社東芝 | 半導体装置の製造方法 |
KR910008650Y1 (ko) * | 1989-05-16 | 1991-10-26 | 원정희 | 형광등 기구 |
JPH0350770A (ja) * | 1989-07-18 | 1991-03-05 | Seiko Epson Corp | Mos型半導体集積回路装置 |
KR950011636B1 (ko) | 1992-03-04 | 1995-10-07 | 금성일렉트론주식회사 | 개선된 레이아웃을 갖는 다이내믹 랜덤 액세스 메모리와 그것의 메모리셀 배치방법 |
JP2889061B2 (ja) * | 1992-09-25 | 1999-05-10 | ローム株式会社 | 半導体記憶装置およびその製法 |
JPH06151748A (ja) * | 1992-10-30 | 1994-05-31 | Nec Corp | 半導体装置の製造方法 |
JP3355511B2 (ja) * | 1995-02-28 | 2002-12-09 | 日本テキサス・インスツルメンツ株式会社 | 半導体装置の製造方法 |
JP3532325B2 (ja) * | 1995-07-21 | 2004-05-31 | 株式会社東芝 | 半導体記憶装置 |
JP2000077620A (ja) * | 1998-08-31 | 2000-03-14 | Nec Corp | Dram及びその製造方法 |
-
1998
- 1998-05-29 TW TW087108442A patent/TW454339B/zh not_active IP Right Cessation
- 1998-06-18 JP JP50415099A patent/JP4215280B2/ja not_active Expired - Fee Related
- 1998-06-18 KR KR1019997011868A patent/KR100760791B1/ko not_active IP Right Cessation
- 1998-06-18 WO PCT/JP1998/002726 patent/WO1998059372A1/ja not_active Application Discontinuation
- 1998-06-18 US US09/446,302 patent/US6483136B1/en not_active Expired - Lifetime
- 1998-06-18 CN CNB988064448A patent/CN1190848C/zh not_active Expired - Fee Related
- 1998-06-18 EP EP98928574A patent/EP1018766A1/en not_active Withdrawn
-
2002
- 2002-08-27 US US10/227,799 patent/US6649956B2/en not_active Expired - Lifetime
-
2003
- 2003-09-04 US US10/653,889 patent/US7042038B2/en not_active Expired - Lifetime
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8478202B2 (en) | 2004-06-18 | 2013-07-02 | Qualcomm Incorporated | Power control for a wireless communication system utilizing orthogonal multiplexing |
US8516314B2 (en) | 2004-06-18 | 2013-08-20 | Qualcomm Incorporated | Robust erasure detection and erasure-rate-based closed loop power control |
US8543152B2 (en) | 2004-06-18 | 2013-09-24 | Qualcomm Incorporated | Power control for a wireless communication system utilizing orthogonal multiplexing |
US8849210B2 (en) | 2005-03-15 | 2014-09-30 | Qualcomm Incorporated | Interference control in a wireless communication system |
US8879425B2 (en) | 2005-03-15 | 2014-11-04 | Qualcomm Incorporated | Interference control in a wireless communication system |
US8942639B2 (en) | 2005-03-15 | 2015-01-27 | Qualcomm Incorporated | Interference control in a wireless communication system |
US8929908B2 (en) | 2005-10-27 | 2015-01-06 | Qualcomm Incorporated | Method and apparatus for estimating reverse link loading in a wireless communication system |
US8488487B2 (en) | 2006-09-08 | 2013-07-16 | Qualcomm Incorporated | Method and apparatus for fast other sector interference (OSI) adjustment |
Also Published As
Publication number | Publication date |
---|---|
WO1998059372A1 (fr) | 1998-12-30 |
CN1261461A (zh) | 2000-07-26 |
EP1018766A1 (en) | 2000-07-12 |
KR20010013847A (ko) | 2001-02-26 |
JP4215280B2 (ja) | 2009-01-28 |
US20040043546A1 (en) | 2004-03-04 |
KR100760791B1 (ko) | 2007-09-20 |
TW454339B (en) | 2001-09-11 |
US20030001214A1 (en) | 2003-01-02 |
US7042038B2 (en) | 2006-05-09 |
US6649956B2 (en) | 2003-11-18 |
US6483136B1 (en) | 2002-11-19 |
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