CN112820336A - 存储器器件及提供写入电压的方法 - Google Patents

存储器器件及提供写入电压的方法 Download PDF

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Publication number
CN112820336A
CN112820336A CN202011265898.7A CN202011265898A CN112820336A CN 112820336 A CN112820336 A CN 112820336A CN 202011265898 A CN202011265898 A CN 202011265898A CN 112820336 A CN112820336 A CN 112820336A
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China
Prior art keywords
voltage
circuit
memory device
instantaneous
write
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Pending
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CN202011265898.7A
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English (en)
Chinese (zh)
Inventor
赖建安
邹宗成
池育德
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Publication of CN112820336A publication Critical patent/CN112820336A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0038—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/106—Data output latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1087—Data input latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0071—Write using write potential applied to access device gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/82—Array having, for accessing a cell, a word line, a bit line and a plate or source line receiving different potentials

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
CN202011265898.7A 2019-11-15 2020-11-13 存储器器件及提供写入电压的方法 Pending CN112820336A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962935830P 2019-11-15 2019-11-15
US62/935,830 2019-11-15
US17/061,600 2020-10-02
US17/061,600 US11393512B2 (en) 2019-11-15 2020-10-02 Memory device

Publications (1)

Publication Number Publication Date
CN112820336A true CN112820336A (zh) 2021-05-18

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CN202011265898.7A Pending CN112820336A (zh) 2019-11-15 2020-11-13 存储器器件及提供写入电压的方法

Country Status (5)

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US (3) US11393512B2 (ko)
KR (2) KR20210060336A (ko)
CN (1) CN112820336A (ko)
DE (1) DE102020126502A1 (ko)
TW (1) TWI754450B (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10950658B2 (en) * 2018-09-21 2021-03-16 Taiwan Semiconductor Manufacturing Company Ltd. Circuit and method to enhance efficiency of memory
US11393512B2 (en) * 2019-11-15 2022-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device
US11450373B2 (en) 2020-08-26 2022-09-20 Micron Technology, Inc. Memory system capable of compensating for kickback noise
KR20220039170A (ko) * 2020-09-22 2022-03-29 에스케이하이닉스 주식회사 전압 생성 회로, 전압 생성 회로를 포함하는 반도체 장치 및 전압 오차 보정 시스템
US20220344222A1 (en) * 2021-04-27 2022-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods of testing memory devices
US11854914B2 (en) * 2021-11-15 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods of testing memory devices

Citations (3)

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CN103855760A (zh) * 2012-11-28 2014-06-11 瑞萨电子株式会社 半导体集成电路及其操作方法
CN109545258A (zh) * 2017-09-21 2019-03-29 三星电子株式会社 包括参考单元的电阻式存储器装置及其操作方法
CN110277122A (zh) * 2018-03-16 2019-09-24 台湾积体电路制造股份有限公司 存储器件及其感测放大器和读取方法

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JP3676904B2 (ja) 1997-04-11 2005-07-27 株式会社ルネサステクノロジ 半導体集積回路
JP4124692B2 (ja) * 2003-04-25 2008-07-23 シャープ株式会社 不揮発性半導体記憶装置
US7057958B2 (en) 2003-09-30 2006-06-06 Sandisk Corporation Method and system for temperature compensation for memory cells with temperature-dependent behavior
US7586795B2 (en) * 2006-03-20 2009-09-08 Cypress Semiconductor Corporation Variable reference voltage circuit for non-volatile memory
KR100929304B1 (ko) 2008-08-04 2009-11-27 주식회사 하이닉스반도체 온도 보상 상 변화 메모리 장치
KR101504340B1 (ko) * 2008-11-04 2015-03-20 삼성전자주식회사 온도 보상 기능을 가지는 불휘발성 메모리 장치 및 그것을 포함하는 메모리 시스템
JP2011211767A (ja) 2010-03-29 2011-10-20 Toshiba Corp 半導体集積回路装置
WO2012032775A1 (ja) 2010-09-07 2012-03-15 パナソニック株式会社 抵抗変化型不揮発性記憶装置の検査方法および抵抗変化型不揮発性記憶装置
US20120230081A1 (en) 2011-03-10 2012-09-13 International Business Machines Corporation Cell-state measurement in resistive memory
US9281029B2 (en) 2012-06-15 2016-03-08 Sandisk 3D Llc Non-volatile memory having 3D array architecture with bit line voltage control and methods thereof
US9202579B2 (en) 2013-03-14 2015-12-01 Sandisk Technologies Inc. Compensation for temperature dependence of bit line resistance
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KR102469810B1 (ko) 2016-07-05 2022-11-24 에스케이하이닉스 주식회사 멀티-비트 데이터 저장을 위한 이피롬 장치 및 이피롬 장치의 리드 회로
KR102391503B1 (ko) 2017-09-11 2022-04-28 에스케이하이닉스 주식회사 임피던스 캘리브레이션 회로를 포함하는 메모리 시스템
KR102611634B1 (ko) 2018-01-22 2023-12-08 삼성전자주식회사 스토리지 장치, 스토리지 시스템 및 스토리지 장치의 동작 방법
US11393512B2 (en) * 2019-11-15 2022-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device

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Publication number Priority date Publication date Assignee Title
CN103855760A (zh) * 2012-11-28 2014-06-11 瑞萨电子株式会社 半导体集成电路及其操作方法
CN109545258A (zh) * 2017-09-21 2019-03-29 三星电子株式会社 包括参考单元的电阻式存储器装置及其操作方法
CN110277122A (zh) * 2018-03-16 2019-09-24 台湾积体电路制造股份有限公司 存储器件及其感测放大器和读取方法

Also Published As

Publication number Publication date
KR20220159333A (ko) 2022-12-02
US20230402075A1 (en) 2023-12-14
TW202121423A (zh) 2021-06-01
US11393512B2 (en) 2022-07-19
TWI754450B (zh) 2022-02-01
KR20210060336A (ko) 2021-05-26
US11735238B2 (en) 2023-08-22
DE102020126502A1 (de) 2021-05-20
US20210151086A1 (en) 2021-05-20
US20220335996A1 (en) 2022-10-20
KR102580104B1 (ko) 2023-09-18

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