CN1123911A - 检测晶片缺陷的方法 - Google Patents

检测晶片缺陷的方法 Download PDF

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CN1123911A
CN1123911A CN95107565A CN95107565A CN1123911A CN 1123911 A CN1123911 A CN 1123911A CN 95107565 A CN95107565 A CN 95107565A CN 95107565 A CN95107565 A CN 95107565A CN 1123911 A CN1123911 A CN 1123911A
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defects
chip
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CN1080927C (zh
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裵相满
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SK Hynix Inc
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Hyundai Electronics Industries Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/5442—Marks applied to semiconductor devices or parts comprising non digital, non alphanumeric information, e.g. symbols
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H01L2223/54466—Located in a dummy or reference die
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
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Abstract

一检测晶片缺陷的方法，它包括下述步骤：在一平整晶片的边缘部分形成用作校准标记的假芯片，该边缘部分没有图案芯片；将该晶片装到一缺陷检测仪中；调整假芯片的边缘部分；观测晶片缺陷，给出缺陷数据；并实施后续工序，按此采用检测的缺陷，观测后续工序中的缺陷，从而可以方便地监测晶片缺陷和加工缺陷之间以及加工缺陷自身之间的有机联系。

Description

检测晶片缺陷的方法
本发明总的说来涉及一种检测晶片缺陷的方法，更详细地说，涉及一平面晶片边缘部分的假芯片形成，该假芯片用作校准标记，从而在以后的处理过程中可以保持晶片缺陷的数据。
半导体器件是通过在晶片上实施许多加工处理步骤而获得的。用缺陷检测装置通过检测每一步骤中可能产生的各种缺陷，并快速而顺畅地分析这些缺陷的原因，可以提高半导体器件的可靠性和产量。
为了得到一个平整晶片(如一完好晶片、一良好成形的晶片或一薄膜淀积的晶片)，从半导体器件制作方法的开始步骤起至形成元件隔离膜之前的那一步骤，是没有较准标记在晶片上形成的。
当通过一检测仪器来检测没有较准标记的平整晶片时，要确定平整晶片上缺陷的大小和座标(x，y)。然而，当从仪器上取下晶片以后检验晶片缺陷时，因为晶片缺陷的检验是在没有校准标记(晶片参考基准)的情况下进行的，所以无法找到那些预先确定的座标。这就是说，可以预计没有校准标记的晶片在缺陷数据的应用中是不起作用的。这是由于尽管在元件隔离步骤之前存在检测到的缺陷座标和大小之类的信息，但是晶片中没有参考座标无法使检测到的座标和大小正确地与元件隔离步骤之前采用图案中某一特定点作为参考基准进行检验的缺陷数据联系在一起。因此，研究人员在缺陷分断中总是觉得很困难，因为他们无法知道缺陷是在哪些步骤产生的，以及这些缺陷是如何发展的。
因此，本发明的目的是克服现有技术中所遇到的上述问题，并提供一种检测晶片缺陷的方法，这种方法通过在晶片边缘部分形成校准标记，在后续工序将数据用于缺陷，而尽可能地减小对后续工序的影响。
按照本发明，上述目的可以通过提供一种检测晶片缺陷的方法来实现，该方法包括下述步骤：在一平整晶片的边缘部分形成一用作较准标记的假芯片，而所述边缘部分没有图案芯片；将该晶片放到一缺陷检测仪内；调整假芯片的边缘部分；观察晶片缺陷，给出缺陷数据；并继续后续工序。
图1是描述晶片边缘部分处形成的假芯片的顶视图，该假芯片用作校准标记。
在结合附图描述了本发明较佳实施例的应用后，将有利于更好地理解本发明。
参见图1。图1是一平整晶片2的顶视图，用作校准标记的假芯片4形成在没有图案芯片的区域(图中用虚线表示)处，假芯片是一种矩形凸起的或凹陷的光敏膜图案。
当形成用于分挡器(stepper)的十字线掩膜(reticle mask)时，采用一种作业文件程序(job file program)，在没有图案芯片出现的晶片边缘处形成两个假芯片4。
另外，可以将光敏膜图案形成的假芯片蚀刻至某一特定深度，从而使其能被保持至元件隔离步骤或以后的处理步骤。
在用作平整晶片校准标记的假芯片形成以后，晶片被装到一缺陷检测仪内，并随后调整假芯片的边缘部分。然后，将平整晶片或精细区域上形成的图案芯片用作单位区域，检测平整晶片上的缺陷，给出其座标和大小等数据。根据这些数据进行分析，确定这些缺陷是否被去除，或者后续步骤(如元件隔离步骤或图案形成步骤)是否在缺陷状态下进行。在实施了后续步骤以后，结合平整晶片上产生的缺陷数据，观察并分析这些图案缺陷。
缺陷检测仪指定一个比图案芯片中重复图案大小大的区域，通过将该区域与该区域左边或右边的图案大小进行比较，检测图案差异，并且当该差异超过某一预定限时，确定缺陷的座标。如此检测的缺陷数据被用来改正或弥补后续步骤处的缺陷，允许在加工缺陷的基础上容易地分析制作工序。
按照本发明，对平整晶片的缺陷进行检测，并随后被用来观测后续工序中的加工缺陷，这就使得能够方便地监测晶片缺陷和加工缺陷之间以及加工缺陷自身之间的有机联系。
本领域的专业人员在阅读了前述发明描述以后，将会对本发明的其他特征、优点及实施例越来越清楚。因此，在不偏离本发明权利要求所描述的精神和范围的情况下，可以在上述发明的特定实施例的详细描述基础上，对这些实施例作各种变化和修正。

Claims (5)

1.一种检测晶片缺陷的方法，其特征在于，它包含下述步骤：
在一平整晶片的边缘部分形成用作校准标记的假芯片，所述边缘部分没有图案芯片；
将所述晶片放到一缺陷检测仪内；
调整所述假芯片的边缘部分；
观测晶片缺陷，给出缺陷数据；以及
实施后续工序。
2.如权利要求1所述的方法，其特征在于，所述假芯片是由矩形凸起的或凹陷的光敏膜图案形成的。
3.如权利要求1所述的方法，其特征在于，所述假芯片有两个。
4.如权利要求1所述的方法，其特征在于，所述较准芯片是由刻蚀所述晶片从而它可被用在后续工序上而形成的。
5.如权利要求1所述的方法，其特征在于，所述平整晶片是一个具有光滑表面的良好晶片或薄膜淀积晶片。
CN95107565A 1994-07-14 1995-07-14 检测晶片缺陷的方法 Expired - Fee Related CN1080927C (zh)

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Cited By (8)

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Publication number Priority date Publication date Assignee Title
CN1321445C (zh) * 2004-03-29 2007-06-13 力晶半导体股份有限公司 缺陷原因分析的方法
CN100380621C (zh) * 2005-04-08 2008-04-09 力晶半导体股份有限公司 晶片缺陷检测方法与系统以及存储媒体
CN101295659B (zh) * 2007-04-29 2010-06-09 中芯国际集成电路制造(上海)有限公司 半导体器件的缺陷检测方法
CN1866492B (zh) * 2005-03-29 2011-05-11 St微电子公司 识别用于拾放设备的参考集成电路的系统和方法
CN101685786B (zh) * 2008-09-26 2011-06-01 上海华虹Nec电子有限公司 用光学显微镜自动检测硅片周边去边及缺陷的方法
CN103035617A (zh) * 2011-09-28 2013-04-10 无锡华润上华科技有限公司 芯片中模块的失效原因判定方法及晶圆结构
TWI455215B (zh) * 2009-06-11 2014-10-01 Advanced Semiconductor Eng 半導體封裝件及其之製造方法
CN112117207A (zh) * 2020-09-25 2020-12-22 上海华力微电子有限公司 晶圆缺陷的监控方法

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Publication number Priority date Publication date Assignee Title
CN1321445C (zh) * 2004-03-29 2007-06-13 力晶半导体股份有限公司 缺陷原因分析的方法
CN1866492B (zh) * 2005-03-29 2011-05-11 St微电子公司 识别用于拾放设备的参考集成电路的系统和方法
CN100380621C (zh) * 2005-04-08 2008-04-09 力晶半导体股份有限公司 晶片缺陷检测方法与系统以及存储媒体
CN101295659B (zh) * 2007-04-29 2010-06-09 中芯国际集成电路制造(上海)有限公司 半导体器件的缺陷检测方法
CN101685786B (zh) * 2008-09-26 2011-06-01 上海华虹Nec电子有限公司 用光学显微镜自动检测硅片周边去边及缺陷的方法
TWI455215B (zh) * 2009-06-11 2014-10-01 Advanced Semiconductor Eng 半導體封裝件及其之製造方法
CN103035617A (zh) * 2011-09-28 2013-04-10 无锡华润上华科技有限公司 芯片中模块的失效原因判定方法及晶圆结构
CN103035617B (zh) * 2011-09-28 2016-08-17 无锡华润上华科技有限公司 芯片中模块的失效原因判定方法及晶圆结构
CN112117207A (zh) * 2020-09-25 2020-12-22 上海华力微电子有限公司 晶圆缺陷的监控方法
CN112117207B (zh) * 2020-09-25 2022-07-15 上海华力微电子有限公司 晶圆缺陷的监控方法

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KR0154158B1 (ko) 1998-12-01
CN1080927C (zh) 2002-03-13
KR960005916A (ko) 1996-02-23
GB2291267A (en) 1996-01-17
GB2291267B (en) 1998-07-15
GB9514269D0 (en) 1995-09-13
US5633173A (en) 1997-05-27

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