CN112334608B - 单晶硅基板中的缺陷密度的控制方法 - Google Patents

单晶硅基板中的缺陷密度的控制方法 Download PDF

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Publication number
CN112334608B
CN112334608B CN201980039589.7A CN201980039589A CN112334608B CN 112334608 B CN112334608 B CN 112334608B CN 201980039589 A CN201980039589 A CN 201980039589A CN 112334608 B CN112334608 B CN 112334608B
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crystal silicon
silicon substrate
single crystal
defect density
heat treatment
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CN112334608A (zh
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竹野博
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201980039589.7A 2018-06-12 2019-05-13 单晶硅基板中的缺陷密度的控制方法 Active CN112334608B (zh)

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JP2018-112062 2018-06-12
JP2018112062A JP7006517B2 (ja) 2018-06-12 2018-06-12 シリコン単結晶基板中の欠陥密度の制御方法
PCT/JP2019/019004 WO2019239762A1 (ja) 2018-06-12 2019-05-13 シリコン単結晶基板中の欠陥密度の制御方法

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CN112334608A CN112334608A (zh) 2021-02-05
CN112334608B true CN112334608B (zh) 2022-07-26

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EP (1) EP3808879B1 (cg-RX-API-DMAC7.html)
JP (1) JP7006517B2 (cg-RX-API-DMAC7.html)
CN (1) CN112334608B (cg-RX-API-DMAC7.html)
DK (1) DK3808879T3 (cg-RX-API-DMAC7.html)
TW (1) TWI801586B (cg-RX-API-DMAC7.html)
WO (1) WO2019239762A1 (cg-RX-API-DMAC7.html)

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JP7334849B2 (ja) * 2020-03-17 2023-08-29 信越半導体株式会社 シリコン単結晶基板中のドナー濃度の制御方法
JP7264100B2 (ja) * 2020-04-02 2023-04-25 信越半導体株式会社 シリコン単結晶基板中のドナー濃度の制御方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101002310A (zh) * 2004-08-12 2007-07-18 小松电子金属股份有限公司 掺氮硅晶片及其制造方法
JP2015156420A (ja) * 2014-02-20 2015-08-27 信越半導体株式会社 シリコン単結晶中の炭素濃度評価方法及び半導体デバイスの製造方法
CN105814676A (zh) * 2013-12-10 2016-07-27 信越半导体株式会社 单晶硅基板的缺陷浓度评价方法

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
JP3211874B2 (ja) 1997-10-29 2001-09-25 サンケン電気株式会社 半導体装置の製造方法
JP4288797B2 (ja) 1998-11-05 2009-07-01 株式会社デンソー 半導体装置の製造方法
JP2001067477A (ja) * 1999-08-27 2001-03-16 Matsushita Electric Ind Co Ltd 個人識別システム
JP2001068477A (ja) * 1999-08-27 2001-03-16 Komatsu Electronic Metals Co Ltd エピタキシャルシリコンウエハ
JP3726622B2 (ja) * 2000-02-25 2005-12-14 株式会社Ｓｕｍｃｏ 半導体シリコンウエーハの製造方法
JP4670224B2 (ja) * 2003-04-01 2011-04-13 株式会社Sumco シリコンウェーハの製造方法
JP5104314B2 (ja) 2005-11-14 2012-12-19 富士電機株式会社 半導体装置およびその製造方法
CN103946985B (zh) 2011-12-28 2017-06-23 富士电机株式会社 半导体装置及半导体装置的制造方法
JP6047456B2 (ja) * 2013-07-16 2016-12-21 信越半導体株式会社 拡散ウェーハの製造方法
JP6083412B2 (ja) * 2014-04-01 2017-02-22 信越半導体株式会社 再結合ライフタイムの制御方法及びシリコン基板の製造方法
JP6447351B2 (ja) * 2015-05-08 2019-01-09 株式会社Sumco シリコンエピタキシャルウェーハの製造方法およびシリコンエピタキシャルウェーハ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101002310A (zh) * 2004-08-12 2007-07-18 小松电子金属股份有限公司 掺氮硅晶片及其制造方法
CN105814676A (zh) * 2013-12-10 2016-07-27 信越半导体株式会社 单晶硅基板的缺陷浓度评价方法
JP2015156420A (ja) * 2014-02-20 2015-08-27 信越半導体株式会社 シリコン単結晶中の炭素濃度評価方法及び半導体デバイスの製造方法

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TWI801586B (zh) 2023-05-11
JP2019214488A (ja) 2019-12-19
DK3808879T3 (da) 2023-05-01
TW202002116A (zh) 2020-01-01
EP3808879A1 (en) 2021-04-21
CN112334608A (zh) 2021-02-05
JP7006517B2 (ja) 2022-01-24
EP3808879A4 (en) 2022-03-02
WO2019239762A1 (ja) 2019-12-19
EP3808879B1 (en) 2023-03-01

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