TWI801586B - 單晶矽基板中的缺陷密度的控制方法 - Google Patents
單晶矽基板中的缺陷密度的控制方法 Download PDFInfo
- Publication number
- TWI801586B TWI801586B TW108117522A TW108117522A TWI801586B TW I801586 B TWI801586 B TW I801586B TW 108117522 A TW108117522 A TW 108117522A TW 108117522 A TW108117522 A TW 108117522A TW I801586 B TWI801586 B TW I801586B
- Authority
- TW
- Taiwan
- Prior art keywords
- single crystal
- crystal silicon
- silicon substrate
- defect density
- heat treatment
- Prior art date
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 181
- 239000000758 substrate Substances 0.000 title claims abstract description 169
- 230000007547 defect Effects 0.000 title claims abstract description 121
- 238000000034 method Methods 0.000 title claims abstract description 83
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 222
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 113
- 238000010438 heat treatment Methods 0.000 claims abstract description 63
- 239000002245 particle Substances 0.000 claims abstract description 40
- 238000002360 preparation method Methods 0.000 claims abstract description 14
- 238000005259 measurement Methods 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 59
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 58
- 239000001301 oxygen Substances 0.000 claims description 58
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 36
- 229910052799 carbon Inorganic materials 0.000 claims description 36
- 238000005136 cathodoluminescence Methods 0.000 claims description 27
- 238000012360 testing method Methods 0.000 claims description 21
- 238000005424 photoluminescence Methods 0.000 claims description 15
- 230000001678 irradiating effect Effects 0.000 claims description 12
- 238000007667 floating Methods 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 238000011084 recovery Methods 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 230000001276 controlling effect Effects 0.000 description 15
- 239000013078 crystal Substances 0.000 description 14
- 239000012535 impurity Substances 0.000 description 14
- 229910052720 vanadium Inorganic materials 0.000 description 14
- 230000006798 recombination Effects 0.000 description 13
- 101100060033 Drosophila melanogaster cic gene Proteins 0.000 description 12
- 101100060035 Mus musculus Cic gene Proteins 0.000 description 12
- 238000005215 recombination Methods 0.000 description 12
- 239000002994 raw material Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 7
- 238000004020 luminiscence type Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000001748 luminescence spectrum Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- FSLGCYNKXXIWGJ-UHFFFAOYSA-N silicon(1+) Chemical compound [Si+] FSLGCYNKXXIWGJ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 208000027697 autoimmune lymphoproliferative syndrome due to CTLA4 haploinsuffiency Diseases 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005524 hole trap Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP2018-112062 | 2018-06-12 | ||
| JP2018-112062 | 2018-06-12 | ||
| JP2018112062A JP7006517B2 (ja) | 2018-06-12 | 2018-06-12 | シリコン単結晶基板中の欠陥密度の制御方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202002116A TW202002116A (zh) | 2020-01-01 |
| TWI801586B true TWI801586B (zh) | 2023-05-11 |
Family
ID=68842170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108117522A TWI801586B (zh) | 2018-06-12 | 2019-05-21 | 單晶矽基板中的缺陷密度的控制方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP3808879B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP7006517B2 (cg-RX-API-DMAC7.html) |
| CN (1) | CN112334608B (cg-RX-API-DMAC7.html) |
| DK (1) | DK3808879T3 (cg-RX-API-DMAC7.html) |
| TW (1) | TWI801586B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2019239762A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7334849B2 (ja) * | 2020-03-17 | 2023-08-29 | 信越半導体株式会社 | シリコン単結晶基板中のドナー濃度の制御方法 |
| JP7264100B2 (ja) * | 2020-04-02 | 2023-04-25 | 信越半導体株式会社 | シリコン単結晶基板中のドナー濃度の制御方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015023062A (ja) * | 2013-07-16 | 2015-02-02 | 信越半導体株式会社 | 拡散ウェーハの製造方法 |
| JP2015156420A (ja) * | 2014-02-20 | 2015-08-27 | 信越半導体株式会社 | シリコン単結晶中の炭素濃度評価方法及び半導体デバイスの製造方法 |
| JP2015198166A (ja) * | 2014-04-01 | 2015-11-09 | 信越半導体株式会社 | 再結合ライフタイムの制御方法及びシリコン基板 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3211874B2 (ja) | 1997-10-29 | 2001-09-25 | サンケン電気株式会社 | 半導体装置の製造方法 |
| JP4288797B2 (ja) | 1998-11-05 | 2009-07-01 | 株式会社デンソー | 半導体装置の製造方法 |
| JP2001067477A (ja) * | 1999-08-27 | 2001-03-16 | Matsushita Electric Ind Co Ltd | 個人識別システム |
| JP2001068477A (ja) * | 1999-08-27 | 2001-03-16 | Komatsu Electronic Metals Co Ltd | エピタキシャルシリコンウエハ |
| JP3726622B2 (ja) * | 2000-02-25 | 2005-12-14 | 株式会社Ｓｕｍｃｏ | 半導体シリコンウエーハの製造方法 |
| JP4670224B2 (ja) * | 2003-04-01 | 2011-04-13 | 株式会社Sumco | シリコンウェーハの製造方法 |
| JP2006054350A (ja) * | 2004-08-12 | 2006-02-23 | Komatsu Electronic Metals Co Ltd | 窒素ドープシリコンウェーハとその製造方法 |
| JP5104314B2 (ja) | 2005-11-14 | 2012-12-19 | 富士電機株式会社 | 半導体装置およびその製造方法 |
| CN103946985B (zh) | 2011-12-28 | 2017-06-23 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
| JP6036670B2 (ja) * | 2013-12-10 | 2016-11-30 | 信越半導体株式会社 | シリコン単結晶基板の欠陥濃度評価方法 |
| JP6447351B2 (ja) * | 2015-05-08 | 2019-01-09 | 株式会社Sumco | シリコンエピタキシャルウェーハの製造方法およびシリコンエピタキシャルウェーハ |
-
2018
- 2018-06-12 JP JP2018112062A patent/JP7006517B2/ja active Active
-
2019
- 2019-05-13 DK DK19820517.1T patent/DK3808879T3/da active
- 2019-05-13 WO PCT/JP2019/019004 patent/WO2019239762A1/ja not_active Ceased
- 2019-05-13 EP EP19820517.1A patent/EP3808879B1/en active Active
- 2019-05-13 CN CN201980039589.7A patent/CN112334608B/zh active Active
- 2019-05-21 TW TW108117522A patent/TWI801586B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015023062A (ja) * | 2013-07-16 | 2015-02-02 | 信越半導体株式会社 | 拡散ウェーハの製造方法 |
| JP2015156420A (ja) * | 2014-02-20 | 2015-08-27 | 信越半導体株式会社 | シリコン単結晶中の炭素濃度評価方法及び半導体デバイスの製造方法 |
| JP2015198166A (ja) * | 2014-04-01 | 2015-11-09 | 信越半導体株式会社 | 再結合ライフタイムの制御方法及びシリコン基板 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112334608B (zh) | 2022-07-26 |
| JP2019214488A (ja) | 2019-12-19 |
| DK3808879T3 (da) | 2023-05-01 |
| TW202002116A (zh) | 2020-01-01 |
| EP3808879A1 (en) | 2021-04-21 |
| CN112334608A (zh) | 2021-02-05 |
| JP7006517B2 (ja) | 2022-01-24 |
| EP3808879A4 (en) | 2022-03-02 |
| WO2019239762A1 (ja) | 2019-12-19 |
| EP3808879B1 (en) | 2023-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Hiyoshi et al. | Reduction of deep levels and improvement of carrier lifetime in n-type 4H-SiC by thermal oxidation | |
| US9159783B2 (en) | Semiconductor device and substrate with chalcogen doped region | |
| US7621996B2 (en) | Silicon wafer and method for producing same | |
| JP6268039B2 (ja) | 検量線の作成方法、不純物濃度の測定方法、及び半導体ウェハの製造方法 | |
| KR101536512B1 (ko) | 포화 전압 추정 방법 및 실리콘 에피택셜 웨이퍼의 제조 방법 | |
| US7893434B2 (en) | High frequency diode and method for producing same | |
| WO2015104755A1 (ja) | エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ | |
| JP2015198166A (ja) | 再結合ライフタイムの制御方法及びシリコン基板 | |
| TWI801586B (zh) | 單晶矽基板中的缺陷密度的控制方法 | |
| CN111512421B (zh) | 复合寿命的控制方法 | |
| Nakamura et al. | Size and dopant-concentration dependence of photoluminescence properties of ion-implanted phosphorus-and boron-codoped Si nanocrystals | |
| JP3312150B2 (ja) | 炭化ケイ素への不純物ドーピング方法 | |
| CN111033709B (zh) | 复合寿命的控制方法 | |
| JP2021163929A (ja) | シリコン単結晶基板中のドナー濃度の制御方法 | |
| Ronning et al. | Characterization of Be-implanted GaN annealed at high temperatures | |
| Katircioglu et al. | Dual ion implantation in ZnTe (O+ Zn) interaction between solubility and stoichiometry | |
| JP2021015905A (ja) | シリコン単結晶基板中の炭素濃度評価方法 | |
| JP7259791B2 (ja) | シリコンウェーハへのクラスターイオン注入による白傷欠陥低減効果の評価方法及びエピタキシャルシリコンウェーハの製造方法 | |
| WO2025220360A1 (ja) | 酸素原子層の酸素濃度の測定方法 | |
| JPS5850408B2 (ja) | ハンドウタイケツシヨウノケツシヨウセイコウジヨウホウホウ | |
| JP2019050283A (ja) | シリコン単結晶基板中の炭素濃度評価方法、及び半導体デバイスの製造方法 |