CN111919281B - 通过扩散来在氮化镓材料中形成掺杂区的方法及系统 - Google Patents

通过扩散来在氮化镓材料中形成掺杂区的方法及系统 Download PDF

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CN111919281B
CN111919281B CN201980022393.7A CN201980022393A CN111919281B CN 111919281 B CN111919281 B CN 111919281B CN 201980022393 A CN201980022393 A CN 201980022393A CN 111919281 B CN111919281 B CN 111919281B
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gallium nitride
nitride layer
magnesium
layer
epitaxial
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CN111919281A (zh
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奥兹古·阿克塔斯
弗拉基米尔·奥德诺博柳多夫
杰姆·巴斯切里
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Qromis Inc
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Qromis Inc
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  • Physics & Mathematics (AREA)
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Junction Field-Effect Transistors (AREA)
CN201980022393.7A 2018-02-12 2019-02-08 通过扩散来在氮化镓材料中形成掺杂区的方法及系统 Active CN111919281B (zh)

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US201862629588P 2018-02-12 2018-02-12
US62/629,588 2018-02-12
PCT/US2019/017358 WO2019157384A1 (en) 2018-02-12 2019-02-08 Method and system for forming doped regions by diffusion in gallium nitride materials

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CN112447834A (zh) * 2019-08-30 2021-03-05 广东致能科技有限公司 半导体器件及其制造方法
WO2021065803A1 (ja) * 2019-09-30 2021-04-08 京セラ株式会社 半導体素子の製造方法及び半導体装置
CN115088079A (zh) 2020-02-11 2022-09-20 克罗米斯有限公司 使用溅射的镁源来扩散氮化镓材料中镁的方法和系统
DE102020215006A1 (de) 2020-11-30 2022-06-02 Robert Bosch Gesellschaft mit beschränkter Haftung Vertikales Leistungshalbleiterbauelement und Verfahren zur Herstellung eines vertikalen Leistungshalbleiterbauelements
JP7442428B2 (ja) 2020-12-11 2024-03-04 株式会社デンソー 半導体装置の製造方法
CN112820644B (zh) * 2020-12-31 2023-08-15 扬州扬杰电子科技股份有限公司 一种高阻断电压的氮化镓pn二极管及制备方法
TWI817120B (zh) * 2021-05-14 2023-10-01 國立臺灣大學 嵌入式蕭特基非對稱型超接面功率半導體
CN114497228A (zh) * 2021-12-31 2022-05-13 山东大学 一种基于n型导电SiC衬底的GaN完全垂直型电子器件及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020001864A1 (en) * 2000-06-30 2002-01-03 Kabushiki Kaisha Toshiba Semiconductor device, semiconductor laser, their manufacturing methods and etching methods
US20130242627A1 (en) * 2012-03-13 2013-09-19 International Business Machines Corporation Monolithic high voltage multiplier
CN103855207A (zh) * 2012-12-04 2014-06-11 富士通株式会社 化合物半导体器件及其制造方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11224859A (ja) * 1998-02-05 1999-08-17 Sanyo Electric Co Ltd 窒化ガリウム系化合物半導体のドーピング方法および半導体素子の製造方法
JP2950316B2 (ja) * 1998-02-17 1999-09-20 松下電器産業株式会社 窒化ガリウム系化合物半導体発光素子及びその製造方法
US7439609B2 (en) * 2004-03-29 2008-10-21 Cree, Inc. Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures
JP2006279023A (ja) 2005-03-03 2006-10-12 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2008171867A (ja) 2007-01-09 2008-07-24 Toyota Central R&D Labs Inc ｐ型のＩＩＩ族窒化物半導体の形成方法
US8343824B2 (en) * 2008-04-29 2013-01-01 International Rectifier Corporation Gallium nitride material processing and related device structures
JP5713546B2 (ja) 2008-09-08 2015-05-07 三菱電機株式会社 半導体装置
JP2011114017A (ja) 2009-11-24 2011-06-09 Mitsubishi Electric Corp 窒化物半導体装置の製造方法
CN108198749A (zh) 2010-11-04 2018-06-22 皇家飞利浦电子股份有限公司 基于结晶弛豫结构的固态发光器件
JP2012227456A (ja) 2011-04-22 2012-11-15 Panasonic Corp 半導体装置
US8846482B2 (en) * 2011-09-22 2014-09-30 Avogy, Inc. Method and system for diffusion and implantation in gallium nitride based devices
US8741707B2 (en) * 2011-12-22 2014-06-03 Avogy, Inc. Method and system for fabricating edge termination structures in GaN materials
JP2013232564A (ja) 2012-04-27 2013-11-14 National Institute Of Advanced Industrial & Technology 半導体装置および半導体装置の製造方法
JP6047995B2 (ja) 2012-08-22 2016-12-21 住友電気工業株式会社 Ｉｉｉ族窒化物半導体を作製する方法、半導体素子を作製する方法、ｉｉｉ族窒化物半導体装置、熱処理を行う方法
JP6146042B2 (ja) 2013-02-18 2017-06-14 住友電気工業株式会社 Ｉｉｉ族窒化物複合基板およびその製造方法、積層ｉｉｉ族窒化物複合基板、ならびにｉｉｉ族窒化物半導体デバイスおよびその製造方法
WO2016133579A1 (en) 2015-02-18 2016-08-25 Siemens Aktiengesellschaft Turbine component thermal barrier coating with crack isolating, cascading, multifurcated engineered groove features
WO2016075927A1 (ja) 2014-11-11 2016-05-19 出光興産株式会社 新規な積層体
JP6665157B2 (ja) 2015-03-17 2020-03-13 パナソニック株式会社 窒化物半導体装置
JP6493523B2 (ja) * 2015-05-08 2019-04-03 富士通株式会社 半導体装置及び半導体装置の製造方法
US20170092747A1 (en) * 2015-09-30 2017-03-30 Sumitomo Electric Industries, Ltd. Hemt having heavily doped n-type regions and process of forming the same
DE102016015713B4 (de) * 2015-12-14 2020-12-10 Globalfoundries Inc. Verfahren zum Bilden einer Halbleitervorrichtungsstruktur
US9741581B2 (en) * 2016-01-11 2017-08-22 Globalfoundries Inc. Using tensile mask to minimize buckling in substrate
KR102312040B1 (ko) * 2016-01-19 2021-10-14 한국전자통신연구원 반도체 소자의 선택적 도핑 방법
JP6683044B2 (ja) 2016-07-12 2020-04-15 富士電機株式会社 半導体装置の製造方法
CN110265297A (zh) * 2018-03-12 2019-09-20 应用材料公司 多色自对准触点选择性蚀刻

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020001864A1 (en) * 2000-06-30 2002-01-03 Kabushiki Kaisha Toshiba Semiconductor device, semiconductor laser, their manufacturing methods and etching methods
US20130242627A1 (en) * 2012-03-13 2013-09-19 International Business Machines Corporation Monolithic high voltage multiplier
CN103855207A (zh) * 2012-12-04 2014-06-11 富士通株式会社 化合物半导体器件及其制造方法

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