SG11202007497WA - Method and system for forming doped regions by diffusion in gallium nitride materials - Google Patents

Method and system for forming doped regions by diffusion in gallium nitride materials

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Publication number
SG11202007497WA
SG11202007497WA SG11202007497WA SG11202007497WA SG11202007497WA SG 11202007497W A SG11202007497W A SG 11202007497WA SG 11202007497W A SG11202007497W A SG 11202007497WA SG 11202007497W A SG11202007497W A SG 11202007497WA SG 11202007497W A SG11202007497W A SG 11202007497WA
Authority
SG
Singapore
Prior art keywords
diffusion
gallium nitride
doped regions
nitride materials
forming doped
Prior art date
Application number
SG11202007497WA
Inventor
Ozgur Aktas
Vladimir Odnoblyudov
Cem Basceri
Original Assignee
Qromis Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qromis Inc filed Critical Qromis Inc
Publication of SG11202007497WA publication Critical patent/SG11202007497WA/en

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    • H01L21/0257—Doping during depositing
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SG11202007497WA 2018-02-12 2019-02-08 Method and system for forming doped regions by diffusion in gallium nitride materials SG11202007497WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862629588P 2018-02-12 2018-02-12
PCT/US2019/017358 WO2019157384A1 (en) 2018-02-12 2019-02-08 Method and system for forming doped regions by diffusion in gallium nitride materials

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SG11202007497WA true SG11202007497WA (en) 2020-09-29

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US (1) US10763110B2 (en)
EP (1) EP3753044B1 (en)
JP (1) JP7328234B2 (en)
KR (1) KR102592686B1 (en)
CN (1) CN111919281B (en)
SG (1) SG11202007497WA (en)
TW (1) TWI796432B (en)
WO (1) WO2019157384A1 (en)

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