SG11202007497WA - Method and system for forming doped regions by diffusion in gallium nitride materials - Google Patents
Method and system for forming doped regions by diffusion in gallium nitride materialsInfo
- Publication number
- SG11202007497WA SG11202007497WA SG11202007497WA SG11202007497WA SG11202007497WA SG 11202007497W A SG11202007497W A SG 11202007497WA SG 11202007497W A SG11202007497W A SG 11202007497WA SG 11202007497W A SG11202007497W A SG 11202007497WA SG 11202007497W A SG11202007497W A SG 11202007497WA
- Authority
- SG
- Singapore
- Prior art keywords
- diffusion
- gallium nitride
- doped regions
- nitride materials
- forming doped
- Prior art date
Links
- 229910002601 GaN Inorganic materials 0.000 title 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title 1
- 238000009792 diffusion process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
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- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862629588P | 2018-02-12 | 2018-02-12 | |
PCT/US2019/017358 WO2019157384A1 (en) | 2018-02-12 | 2019-02-08 | Method and system for forming doped regions by diffusion in gallium nitride materials |
Publications (1)
Publication Number | Publication Date |
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SG11202007497WA true SG11202007497WA (en) | 2020-09-29 |
Family
ID=67540217
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202007497WA SG11202007497WA (en) | 2018-02-12 | 2019-02-08 | Method and system for forming doped regions by diffusion in gallium nitride materials |
Country Status (8)
Country | Link |
---|---|
US (1) | US10763110B2 (en) |
EP (1) | EP3753044B1 (en) |
JP (1) | JP7328234B2 (en) |
KR (1) | KR102592686B1 (en) |
CN (1) | CN111919281B (en) |
SG (1) | SG11202007497WA (en) |
TW (1) | TWI796432B (en) |
WO (1) | WO2019157384A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112447834A (en) * | 2019-08-30 | 2021-03-05 | 广东致能科技有限公司 | Semiconductor device and method for manufacturing the same |
JPWO2021065803A1 (en) * | 2019-09-30 | 2021-04-08 | ||
US11881404B2 (en) | 2020-02-11 | 2024-01-23 | QROMIS, Inc. | Method and system for diffusing magnesium in gallium nitride materials using sputtered magnesium sources |
DE102020215006A1 (en) | 2020-11-30 | 2022-06-02 | Robert Bosch Gesellschaft mit beschränkter Haftung | Vertical power semiconductor device and method for manufacturing a vertical power semiconductor device |
JP7442428B2 (en) | 2020-12-11 | 2024-03-04 | 株式会社デンソー | Manufacturing method of semiconductor device |
CN112820644B (en) * | 2020-12-31 | 2023-08-15 | 扬州扬杰电子科技股份有限公司 | Gallium nitride PN diode with high blocking voltage and preparation method thereof |
TWI817120B (en) * | 2021-05-14 | 2023-10-01 | 國立臺灣大學 | Embedded Schottky Asymmetric Superjunction Power Semiconductor |
CN114497228A (en) * | 2021-12-31 | 2022-05-13 | 山东大学 | GaN completely vertical electronic device based on n-type conductive SiC substrate and preparation method thereof |
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JP6665157B2 (en) * | 2015-03-17 | 2020-03-13 | パナソニック株式会社 | Nitride semiconductor device |
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US20170092747A1 (en) * | 2015-09-30 | 2017-03-30 | Sumitomo Electric Industries, Ltd. | Hemt having heavily doped n-type regions and process of forming the same |
DE102016015713B4 (en) * | 2015-12-14 | 2020-12-10 | Globalfoundries Inc. | Method of forming a semiconductor device structure |
US9741581B2 (en) * | 2016-01-11 | 2017-08-22 | Globalfoundries Inc. | Using tensile mask to minimize buckling in substrate |
KR102312040B1 (en) * | 2016-01-19 | 2021-10-14 | 한국전자통신연구원 | Method for selective doping of semiconductor device |
JP6683044B2 (en) * | 2016-07-12 | 2020-04-15 | 富士電機株式会社 | Method for manufacturing semiconductor device |
EP3540768A1 (en) * | 2018-03-12 | 2019-09-18 | Applied Materials, Inc. | Multicolor self-aligned contact selective etch |
-
2019
- 2019-02-08 SG SG11202007497WA patent/SG11202007497WA/en unknown
- 2019-02-08 KR KR1020207025984A patent/KR102592686B1/en active IP Right Grant
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- 2019-02-08 EP EP19751380.7A patent/EP3753044B1/en active Active
- 2019-02-08 US US16/271,704 patent/US10763110B2/en active Active
- 2019-02-08 CN CN201980022393.7A patent/CN111919281B/en active Active
- 2019-02-12 TW TW108104562A patent/TWI796432B/en active
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JP7328234B2 (en) | 2023-08-16 |
WO2019157384A1 (en) | 2019-08-15 |
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EP3753044B1 (en) | 2023-05-03 |
CN111919281A (en) | 2020-11-10 |
TW201941430A (en) | 2019-10-16 |
EP3753044A4 (en) | 2021-12-08 |
KR20200120679A (en) | 2020-10-21 |
TWI796432B (en) | 2023-03-21 |
CN111919281B (en) | 2024-04-02 |
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