SG11202104157QA - Precursor composition for forming metal film, metal film forming method using same, and semiconductor device comprising same metal film - Google Patents

Precursor composition for forming metal film, metal film forming method using same, and semiconductor device comprising same metal film

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Publication number
SG11202104157QA
SG11202104157QA SG11202104157QA SG11202104157QA SG11202104157QA SG 11202104157Q A SG11202104157Q A SG 11202104157QA SG 11202104157Q A SG11202104157Q A SG 11202104157QA SG 11202104157Q A SG11202104157Q A SG 11202104157QA SG 11202104157Q A SG11202104157Q A SG 11202104157QA
Authority
SG
Singapore
Prior art keywords
metal film
same
forming
semiconductor device
precursor composition
Prior art date
Application number
SG11202104157QA
Inventor
Chang Sung Hong
Yong Joo Park
Tae Hoon Oh
In Chun Hwang
Sang Kyung Lee
Dong Hyun Kim
Original Assignee
Sk Trichem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sk Trichem filed Critical Sk Trichem
Priority claimed from PCT/KR2019/017151 external-priority patent/WO2020122506A2/en
Publication of SG11202104157QA publication Critical patent/SG11202104157QA/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
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    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
SG11202104157QA 2018-12-12 2019-12-06 Precursor composition for forming metal film, metal film forming method using same, and semiconductor device comprising same metal film SG11202104157QA (en)

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KR102103346B1 (en) * 2017-11-15 2020-04-22 에스케이트리켐 주식회사 Precursor Solution for Vapor Deposition and Fabrication Method of Thin Film Using the Same
KR20210127183A (en) * 2019-02-15 2021-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method of manufacturing a semiconductor device
KR102550599B1 (en) * 2020-11-26 2023-07-03 오션브릿지 주식회사 Metal precursor compound and deposition method for preparing film using the same
US20220205099A1 (en) * 2020-12-29 2022-06-30 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Group iv element containing precursors and deposition of group iv element containing films
KR20220157741A (en) * 2021-05-21 2022-11-29 주식회사 아이켐스 Novel hafnium compound, precursor composition comprising the same, thin film using the same and deposition method of the same
KR102574475B1 (en) * 2022-05-13 2023-09-06 주식회사 유피케미칼 Composition for film deposition comprising group iv metal element-containing precursor compound, and method for forming film using the same

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KR20100016477A (en) 2007-04-12 2010-02-12 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Zirconium, hafnuim, titanium, and silicon precursors for ald/cvd
EP2464652A4 (en) 2009-08-14 2013-01-09 Air Liquide Hafnium- and zirconium-containing precursors and methods of using the same
US8563085B2 (en) * 2009-08-18 2013-10-22 Samsung Electronics Co., Ltd. Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor
JP5957017B2 (en) 2011-03-15 2016-07-27 メカロニックス シーオー． エルティディ．Ｍｅｃｈａｒｏｎｉｃｓ Ｃｏ． Ｌｔｄ． Novel group 4B organometallic compound and method for producing the same
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US8962078B2 (en) 2012-06-22 2015-02-24 Tokyo Electron Limited Method for depositing dielectric films
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US11972941B2 (en) 2024-04-30
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