SG11202007497WA - Method and system for forming doped regions by diffusion in gallium nitride materials - Google Patents
Method and system for forming doped regions by diffusion in gallium nitride materialsInfo
- Publication number
- SG11202007497WA SG11202007497WA SG11202007497WA SG11202007497WA SG11202007497WA SG 11202007497W A SG11202007497W A SG 11202007497WA SG 11202007497W A SG11202007497W A SG 11202007497WA SG 11202007497W A SG11202007497W A SG 11202007497WA SG 11202007497W A SG11202007497W A SG 11202007497WA
- Authority
- SG
- Singapore
- Prior art keywords
- diffusion
- gallium nitride
- doped regions
- nitride materials
- forming doped
- Prior art date
Links
- 229910002601 GaN Inorganic materials 0.000 title 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title 1
- 238000009792 diffusion process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
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- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862629588P | 2018-02-12 | 2018-02-12 | |
PCT/US2019/017358 WO2019157384A1 (en) | 2018-02-12 | 2019-02-08 | Method and system for forming doped regions by diffusion in gallium nitride materials |
Publications (1)
Publication Number | Publication Date |
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SG11202007497WA true SG11202007497WA (en) | 2020-09-29 |
Family
ID=67540217
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202007497WA SG11202007497WA (en) | 2018-02-12 | 2019-02-08 | Method and system for forming doped regions by diffusion in gallium nitride materials |
Country Status (8)
Country | Link |
---|---|
US (1) | US10763110B2 (ja) |
EP (1) | EP3753044B1 (ja) |
JP (1) | JP7328234B2 (ja) |
KR (1) | KR102592686B1 (ja) |
CN (1) | CN111919281B (ja) |
SG (1) | SG11202007497WA (ja) |
TW (1) | TWI796432B (ja) |
WO (1) | WO2019157384A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112447834A (zh) * | 2019-08-30 | 2021-03-05 | 广东致能科技有限公司 | 半导体器件及其制造方法 |
WO2021065803A1 (ja) * | 2019-09-30 | 2021-04-08 | 京セラ株式会社 | 半導体素子の製造方法及び半導体装置 |
CN115088079A (zh) | 2020-02-11 | 2022-09-20 | 克罗米斯有限公司 | 使用溅射的镁源来扩散氮化镓材料中镁的方法和系统 |
DE102020215006A1 (de) | 2020-11-30 | 2022-06-02 | Robert Bosch Gesellschaft mit beschränkter Haftung | Vertikales Leistungshalbleiterbauelement und Verfahren zur Herstellung eines vertikalen Leistungshalbleiterbauelements |
JP7442428B2 (ja) | 2020-12-11 | 2024-03-04 | 株式会社デンソー | 半導体装置の製造方法 |
CN112820644B (zh) * | 2020-12-31 | 2023-08-15 | 扬州扬杰电子科技股份有限公司 | 一种高阻断电压的氮化镓pn二极管及制备方法 |
TWI817120B (zh) * | 2021-05-14 | 2023-10-01 | 國立臺灣大學 | 嵌入式蕭特基非對稱型超接面功率半導體 |
CN114497228A (zh) * | 2021-12-31 | 2022-05-13 | 山东大学 | 一种基于n型导电SiC衬底的GaN完全垂直型电子器件及其制备方法 |
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JPH11224859A (ja) * | 1998-02-05 | 1999-08-17 | Sanyo Electric Co Ltd | 窒化ガリウム系化合物半導体のドーピング方法および半導体素子の製造方法 |
JP2950316B2 (ja) * | 1998-02-17 | 1999-09-20 | 松下電器産業株式会社 | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
JP2002026456A (ja) | 2000-06-30 | 2002-01-25 | Toshiba Corp | 半導体装置、半導体レーザ及びその製造方法並びにエッチング方法 |
US7439609B2 (en) * | 2004-03-29 | 2008-10-21 | Cree, Inc. | Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures |
JP2006279023A (ja) | 2005-03-03 | 2006-10-12 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2008171867A (ja) | 2007-01-09 | 2008-07-24 | Toyota Central R&D Labs Inc | p型のIII族窒化物半導体の形成方法 |
US8343824B2 (en) * | 2008-04-29 | 2013-01-01 | International Rectifier Corporation | Gallium nitride material processing and related device structures |
JP5713546B2 (ja) | 2008-09-08 | 2015-05-07 | 三菱電機株式会社 | 半導体装置 |
JP2011114017A (ja) | 2009-11-24 | 2011-06-09 | Mitsubishi Electric Corp | 窒化物半導体装置の製造方法 |
CN108198749A (zh) | 2010-11-04 | 2018-06-22 | 皇家飞利浦电子股份有限公司 | 基于结晶弛豫结构的固态发光器件 |
JP2012227456A (ja) | 2011-04-22 | 2012-11-15 | Panasonic Corp | 半導体装置 |
US8846482B2 (en) * | 2011-09-22 | 2014-09-30 | Avogy, Inc. | Method and system for diffusion and implantation in gallium nitride based devices |
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2019
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- 2019-02-08 WO PCT/US2019/017358 patent/WO2019157384A1/en unknown
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US20190252186A1 (en) | 2019-08-15 |
EP3753044A1 (en) | 2020-12-23 |
JP2021513228A (ja) | 2021-05-20 |
EP3753044B1 (en) | 2023-05-03 |
TWI796432B (zh) | 2023-03-21 |
CN111919281A (zh) | 2020-11-10 |
KR102592686B1 (ko) | 2023-10-20 |
EP3753044A4 (en) | 2021-12-08 |
KR20200120679A (ko) | 2020-10-21 |
CN111919281B (zh) | 2024-04-02 |
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