CN111455457A - 碳化硅晶体的生长装置及其制备方法 - Google Patents
碳化硅晶体的生长装置及其制备方法 Download PDFInfo
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- CN111455457A CN111455457A CN202010357948.8A CN202010357948A CN111455457A CN 111455457 A CN111455457 A CN 111455457A CN 202010357948 A CN202010357948 A CN 202010357948A CN 111455457 A CN111455457 A CN 111455457A
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- Prior art keywords
- crucible
- silicon carbide
- powder
- stirring
- growing
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- 239000013078 crystal Substances 0.000 title claims abstract description 59
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title abstract description 14
- 238000003756 stirring Methods 0.000 claims abstract description 37
- 239000002994 raw material Substances 0.000 claims abstract description 34
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 21
- 239000010439 graphite Substances 0.000 claims abstract description 21
- 239000012535 impurity Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 12
- 239000011261 inert gas Substances 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- 239000011863 silicon-based powder Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 230000002194 synthesizing effect Effects 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims 1
- 235000012054 meals Nutrition 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 4
- 239000012071 phase Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 102000029749 Microtubule Human genes 0.000 description 1
- 108091022875 Microtubule Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 210000004688 microtubule Anatomy 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN202010357948.8A CN111455457B (zh) | 2020-04-29 | 2020-04-29 | 碳化硅晶体的生长装置及其制备方法 |
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CN202010357948.8A CN111455457B (zh) | 2020-04-29 | 2020-04-29 | 碳化硅晶体的生长装置及其制备方法 |
Publications (2)
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CN111455457A true CN111455457A (zh) | 2020-07-28 |
CN111455457B CN111455457B (zh) | 2021-09-21 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112899782A (zh) * | 2021-01-18 | 2021-06-04 | 河南城建学院 | 一种晶体制备装置 |
CN113151900A (zh) * | 2021-04-30 | 2021-07-23 | 山东天岳先进科技股份有限公司 | 一种碳化硅晶体及其制备方法 |
CN115212656A (zh) * | 2022-07-22 | 2022-10-21 | 中材人工晶体研究院(山东)有限公司 | 多孔过滤器、制备方法及其在碳化硅单晶生长中的用途 |
CN116377567A (zh) * | 2023-06-05 | 2023-07-04 | 苏州优晶光电科技有限公司 | 一种碳化硅单晶的生长装置及生长方法 |
CN117737858A (zh) * | 2024-02-02 | 2024-03-22 | 河北同光半导体股份有限公司 | 一种低包裹物密度SiC晶体的生长装置及生长方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120225004A1 (en) * | 2006-04-11 | 2012-09-06 | Ii-Vi Incorporated | Halosilane Assisted PVT Growth of SiC |
CN207391600U (zh) * | 2017-10-24 | 2018-05-22 | 福建北电新材料科技有限公司 | 一种碳化硅晶体的生长设备 |
CN110129885A (zh) * | 2019-04-22 | 2019-08-16 | 山东天岳先进材料科技有限公司 | 一种碳化硅晶体及其制备方法 |
CN110747504A (zh) * | 2019-11-26 | 2020-02-04 | 中国科学院物理研究所 | 一种碳化硅单晶的生长方法 |
-
2020
- 2020-04-29 CN CN202010357948.8A patent/CN111455457B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120225004A1 (en) * | 2006-04-11 | 2012-09-06 | Ii-Vi Incorporated | Halosilane Assisted PVT Growth of SiC |
CN207391600U (zh) * | 2017-10-24 | 2018-05-22 | 福建北电新材料科技有限公司 | 一种碳化硅晶体的生长设备 |
CN110129885A (zh) * | 2019-04-22 | 2019-08-16 | 山东天岳先进材料科技有限公司 | 一种碳化硅晶体及其制备方法 |
CN110747504A (zh) * | 2019-11-26 | 2020-02-04 | 中国科学院物理研究所 | 一种碳化硅单晶的生长方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112899782A (zh) * | 2021-01-18 | 2021-06-04 | 河南城建学院 | 一种晶体制备装置 |
CN112899782B (zh) * | 2021-01-18 | 2022-03-11 | 河南城建学院 | 一种晶体制备装置 |
CN113151900A (zh) * | 2021-04-30 | 2021-07-23 | 山东天岳先进科技股份有限公司 | 一种碳化硅晶体及其制备方法 |
CN115212656A (zh) * | 2022-07-22 | 2022-10-21 | 中材人工晶体研究院(山东)有限公司 | 多孔过滤器、制备方法及其在碳化硅单晶生长中的用途 |
CN116377567A (zh) * | 2023-06-05 | 2023-07-04 | 苏州优晶光电科技有限公司 | 一种碳化硅单晶的生长装置及生长方法 |
CN116377567B (zh) * | 2023-06-05 | 2023-10-13 | 苏州优晶光电科技有限公司 | 一种碳化硅单晶的生长装置及生长方法 |
CN117737858A (zh) * | 2024-02-02 | 2024-03-22 | 河北同光半导体股份有限公司 | 一种低包裹物密度SiC晶体的生长装置及生长方法 |
CN117737858B (zh) * | 2024-02-02 | 2024-09-06 | 河北同光半导体股份有限公司 | 一种低包裹物密度SiC晶体的生长装置及生长方法 |
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CN111455457B (zh) | 2021-09-21 |
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Address after: 321000 south side of Building 1, No. 2688, south 2nd Ring West Road, qiubin street, Wucheng District, Jinhua City, Zhejiang Province Patentee after: Jinhua Bolante New Material Co.,Ltd. Address before: 321000 south side of Building 1, No. 2688, south 2nd Ring West Road, qiubin street, Wucheng District, Jinhua City, Zhejiang Province Patentee before: Jinhua Bolante Electronic Materials Co.,Ltd. |
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Effective date of registration: 20220607 Address after: 321000 plant 3, No. 2688, south 2nd Ring West Road, qiubin street, Wucheng District, Jinhua City, Zhejiang Province (self declaration) Patentee after: Zhejiang Fuxin Microelectronics Technology Co.,Ltd. Address before: 321000 south side of Building 1, No. 2688, south 2nd Ring West Road, qiubin street, Wucheng District, Jinhua City, Zhejiang Province Patentee before: Jinhua Bolante New Material Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20230602 Address after: 321000 south side of Building 1, No. 2688, south 2nd Ring West Road, qiubin street, Wucheng District, Jinhua City, Zhejiang Province Patentee after: Jinhua Bolante New Material Co.,Ltd. Address before: 321000 plant 3, No. 2688, south 2nd Ring West Road, qiubin street, Wucheng District, Jinhua City, Zhejiang Province (self declaration) Patentee before: Zhejiang Fuxin Microelectronics Technology Co.,Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: The growth device and preparation method of silicon carbide crystals Granted publication date: 20210921 Pledgee: Bank of Jinhua Limited by Share Ltd. science and Technology Branch Pledgor: Jinhua Bolante New Material Co.,Ltd. Registration number: Y2024980021188 |