CN111455457A - 碳化硅晶体的生长装置及其制备方法 - Google Patents
碳化硅晶体的生长装置及其制备方法 Download PDFInfo
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- CN111455457A CN111455457A CN202010357948.8A CN202010357948A CN111455457A CN 111455457 A CN111455457 A CN 111455457A CN 202010357948 A CN202010357948 A CN 202010357948A CN 111455457 A CN111455457 A CN 111455457A
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- crucible
- silicon carbide
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN202010357948.8A CN111455457B (zh) | 2020-04-29 | 2020-04-29 | 碳化硅晶体的生长装置及其制备方法 |
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CN202010357948.8A CN111455457B (zh) | 2020-04-29 | 2020-04-29 | 碳化硅晶体的生长装置及其制备方法 |
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CN111455457A true CN111455457A (zh) | 2020-07-28 |
CN111455457B CN111455457B (zh) | 2021-09-21 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112899782A (zh) * | 2021-01-18 | 2021-06-04 | 河南城建学院 | 一种晶体制备装置 |
CN113151900A (zh) * | 2021-04-30 | 2021-07-23 | 山东天岳先进科技股份有限公司 | 一种碳化硅晶体及其制备方法 |
CN115212656A (zh) * | 2022-07-22 | 2022-10-21 | 中材人工晶体研究院(山东)有限公司 | 多孔过滤器、制备方法及其在碳化硅单晶生长中的用途 |
CN116377567A (zh) * | 2023-06-05 | 2023-07-04 | 苏州优晶光电科技有限公司 | 一种碳化硅单晶的生长装置及生长方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120225004A1 (en) * | 2006-04-11 | 2012-09-06 | Ii-Vi Incorporated | Halosilane Assisted PVT Growth of SiC |
CN207391600U (zh) * | 2017-10-24 | 2018-05-22 | 福建北电新材料科技有限公司 | 一种碳化硅晶体的生长设备 |
CN110129885A (zh) * | 2019-04-22 | 2019-08-16 | 山东天岳先进材料科技有限公司 | 一种碳化硅晶体及其制备方法 |
CN110747504A (zh) * | 2019-11-26 | 2020-02-04 | 中国科学院物理研究所 | 一种碳化硅单晶的生长方法 |
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2020
- 2020-04-29 CN CN202010357948.8A patent/CN111455457B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120225004A1 (en) * | 2006-04-11 | 2012-09-06 | Ii-Vi Incorporated | Halosilane Assisted PVT Growth of SiC |
CN207391600U (zh) * | 2017-10-24 | 2018-05-22 | 福建北电新材料科技有限公司 | 一种碳化硅晶体的生长设备 |
CN110129885A (zh) * | 2019-04-22 | 2019-08-16 | 山东天岳先进材料科技有限公司 | 一种碳化硅晶体及其制备方法 |
CN110747504A (zh) * | 2019-11-26 | 2020-02-04 | 中国科学院物理研究所 | 一种碳化硅单晶的生长方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112899782A (zh) * | 2021-01-18 | 2021-06-04 | 河南城建学院 | 一种晶体制备装置 |
CN112899782B (zh) * | 2021-01-18 | 2022-03-11 | 河南城建学院 | 一种晶体制备装置 |
CN113151900A (zh) * | 2021-04-30 | 2021-07-23 | 山东天岳先进科技股份有限公司 | 一种碳化硅晶体及其制备方法 |
CN115212656A (zh) * | 2022-07-22 | 2022-10-21 | 中材人工晶体研究院(山东)有限公司 | 多孔过滤器、制备方法及其在碳化硅单晶生长中的用途 |
CN116377567A (zh) * | 2023-06-05 | 2023-07-04 | 苏州优晶光电科技有限公司 | 一种碳化硅单晶的生长装置及生长方法 |
CN116377567B (zh) * | 2023-06-05 | 2023-10-13 | 苏州优晶光电科技有限公司 | 一种碳化硅单晶的生长装置及生长方法 |
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Effective date of registration: 20230602 Address after: 321000 south side of Building 1, No. 2688, south 2nd Ring West Road, qiubin street, Wucheng District, Jinhua City, Zhejiang Province Patentee after: Jinhua Bolante New Material Co.,Ltd. Address before: 321000 plant 3, No. 2688, south 2nd Ring West Road, qiubin street, Wucheng District, Jinhua City, Zhejiang Province (self declaration) Patentee before: Zhejiang Fuxin Microelectronics Technology Co.,Ltd. |
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